• Title/Summary/Keyword: Taiwan

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Morphological Characteristics of Goheung Native Garlic Variety (고흥 재래종 마늘의 형태적 특성)

  • Yang Seung Yul;Cho Ja Yong;Heo Buk Gu
    • The Korean Journal of Community Living Science
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    • v.16 no.2
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    • pp.93-97
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    • 2005

  • This study was conducted to clarify the morphological characteristics of Goheung native garlic variety compared with those of Spain and Taiwan varieties in Goheung region. Bulb fresh weights of Goheung, Spain and Taiwan varieties were 59.1g, 120.3g and 78.1g. Those bulb diameters were as followed that Spain 8.1cm, Taiwan 7.2cm and Goheung 5.3cm. And, bulb heights were Spain 5.4cm, Taiwan 4.4cm and Goheung 4.0cm. Bulb shape index of garlics by different varieties were increased in the order of Taiwan, Spain and Goheung products. Number of cloves produced in garlics were in the order of Goheung (12.1), Taiwan (11.4) and Spain (8.2) products. And clove fresh weight of garlics were Spain (7.7g), Taiwan (6.8g) and Goheung (4.6g) products. Clove height of garlics were in the order of Spain (2.8cm), Taiwan (2.4cm) and Goheung (2.1cm) products. And, clove diameter of garlics were Spain (2.1cm), Taiwan (1.7cm) and Goheung (1.3cm) products. Clove shape index of garlics by different varieties were increased in the order of Goheung (1.62), Taiwan (1.45) and Spain (1.32) products. Skin color differences in terms of a value were increased in the order of Goheung, Taiwan and Spain varieties. Surface color differences of flesh texture and peeled clove for garlics by the different garlic varieties were not significant.

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Forming Low-Resistivity Electrodes of Thin Film Transistors with Selective Electroless Plating Process

  • Chiang, Shin-Chuan;Chuang, Bor-Chuan;Tsai, Chia-Hao;Chang, Shih-Chieh;Hsiao, Ming-Nan;Huang, Yuan-Pin;Huang, Chih-Ya
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.597-600
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    • 2006

  • The silver gate and source/drain electrodes for an a-Si thin film transistor were fabricated by the selective electroless plating (SELP) process. Relevant physical properties including taper angle, uniformity and resistivity are investigated. The Ag layer was about 150nm to 250nm thick, the resistivity less than $3{\times}10^{-6}$ Ohm-cm and the taper angle 45'-60' and the nonuniformity less than 10% on G2 substrates. The transfer characteristics with the Ag gate, and source/drain electrodes respectively possessed good field effect mobility similar to conventionally fabricated a-Si TFTs. This process provided low resistivity, low cost and ease of processing.

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