• 한국식품과학회지
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• 제22권6호
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• pp.625-631
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• 1990

사과로부터 추출한 산화효소와 5종의 polyphenol 화합물을 반응시켜 얻어진 사과효소 갈변반응 생성물(AEBRP)들의 항돌연변이 효과를 검토하기 위해 발암물질로 알려져 있는 N-methyl-N'-nitro-N-nitrosoguanidine(MNNG), mitomycin C(MMC), 4-nitroquinoline-1-oxide(4NQO), benzo(${\alpha}$)pyrene(B(${\alpha}$)P) 그리고 3-amino-1,4-dimethyl-5H-pyrido(4,3-b) indole(Trp-P-1)에 대한 다섯 종류의 사과효소 갈변반응 생성물들의 돌연변이 억제효과를 검토하였다. Bacillus subtilis Hl7과 M45 두 균주를 이용하는 spore rec-assay에서 homocate-chol-AEBRP와 hydroquinone-AEBRP는 농도증가에 따라 MMC와 MNNG에 대하여 강한 억제효과를 나타내었으며 Salmonella typhimurium TA98과 TA100 두 균주를 이용한 Antimutagenicity test에서는 hydroxyhydro-quinone-AEBRP와 pyrogallol-AEBRP는 S-9mix 첨가시 두 균주에서 Trp-P-1과 B(${\alpha}$)P에 대하여 강한 억제효과를 나타내었다. 그리고 대부분의 AEBRP들은 MNNG로 유도된 TA98주에서 $50%{\sim}80%$의 억제효과를 나타내었으나 hydroxy-hydroquinone-AEBRP를 제외한 네 종류의 AEBRP들은 TA100 균주에서 약 94%의 억제효과를 나타내었다. 한편, 4NQO에 대한 다섯 종류의 AEBRP들의 돌연변이 억제효과는 일반적으로 약한 편이었으며, 특히 homocatechol-AEBRP는 TA98 균주에서 48%의 억제효과를 보였고 TA100 균주에서는 homocatechol-AEBRP와 hydroquinone-AEBRP가 46%에서 58% 정도의 억제효과를 나타내었다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2006년도 추계학술발표회 초록집
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• pp.48-48
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• 2006

• 동아시아식생활학회지
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• 제7권4호
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• pp.527-537
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• 1997

This study was performed to determine the effects of antimutagenicity of Porturaca oleracea L. in Korea. In Ames test, the ethanol extract of Poturaca oleracea L. inhibited mutagenic activity of N-methyl-N'-nitro-N-nitrosoguanidine(MNNG), , 4-nitroquinoline-1-oxide(4NQO), benzo($\alpha$)pyrene (B($\alpha$)P) and 3-amino-1,4-dimethyl-5H-pyrido-(4,3-b)indole (Trp-P-1) in Salmonella typhimurium TA98 and TA100. But hot-water extract Poturaca oleracea L. only Inhibited mutagenic activity of MNNG in Salmonella typhimurium TA100, On 4NQO, the ethanol extract 100-1,600$\mu\textrm{g}$/plate of Porturaca oleracea L. showed a slight inhibitory effect of 13-48%, 4-47% in TA98 and TA100, respectively, but on MNNG, it showed higher inhibitory effect of 6-86% in TA100, And the treatment of 1,600$\mu\textrm{g}$/plate of ethanol extract of Porturacea L. had strong antimutagenicity with 74-87% inhibition against TA98 and TA100 induced by B(a)P and with 85-93% inhibition against TA98 and TA100 induced by Trp-P-1. The ethanol extract was fractionated with ether. chloroform, ethylacetate, butanol and water. Among them, most of the fraction except water fraction showed strong antimutagenicity effects against mutation induced by 4-NQO, MNNG, B(a)P and Trp-P-1. Chloroform fraction had strong antimutagenicity with 91% inhibition against TA100 induced by MNNG, diethyl etherfraction had strong antimutagenicity with 92%, 98% inhibition against TA98 and TA100 induced by 4NQO, Chloroform fraction had strong antimutagenicity with 97% inhibition against TA100 induced by B (a)P and diethyl etherfraction had strong antimutagenicity with 98% inhibition against both strain Induced by Trp-P-1, respectively.

• 한국표면공학회지
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• 제42권4호
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• pp.161-168
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• 2009

Effects of TiN/Ti multilayer coating on the Ti-30Ta-xZr alloy surface were studied by using various experiments. The Ti-30Ta containing Zr (5, 10 and 15 wt%) were melted 10 times to improve chemical homogeneity by using a vacuum furnace. And then samples were homogenized for 24 hrs at $1000^{\circ}C$. The specimens were prepared for TiN/Ti coating by cutting and polishing. The prepared specimens were coated with TiN/Ti multilayers by using DC magnetron sputtering method. The analyses of coated surface and coated layer were carried out by field emission scanning electron microscope(FE-SEM), EDX, and X-ray diffractometer(XRD). From the microstructure and XRD analysis of Ti-30Ta-xZr alloys, The equiaxed structure was changed to needle-like structure with increasing Zr content. And $\alpha$-peak and elastic modulus increased as Zr content increased. The $\alpha$ and $\beta$ phase predominantly were found in the specimen containing high Zr content. According to the analysis of TiN/Ti coating layer, the surface defects and structures of Ti-30Ta-xZr were covered with TiN/Ti coating layer and surface roughness decreased.

• 한국산학기술학회:학술대회논문집
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• 한국산학기술학회 2005년도 춘계학술발표논문집
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• pp.45-47
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• 2005

전기, 전자, 우주, 자동차, 무기 등의 여러 분야에서 응용되고 있는 고정밀, 고저항체 박막인 TaNx 다층박막을 반응성 마그네트론 스퍼터링법으로 제조하여 질소분압에 따른 TCR 특성 변화를 조사하고, XRD와 SEM 관찰을 통하여 미세조직이 전기적 성질에 미치는 영향을 알아보았다. 제조된 TaNx 박막의 전기저항은 질소분율이 증가함에 따라 저온보다 고온에서 전기저항이 감소함을 보여 뚜렷한 (-)TCR 특성을 나타내었다. XRD 분석 결과, $Ar/N_2$ 비가 0.05에서 TaN 상이 형성되고 0.1에서 우수한 결정성을 나타내었으며, $N_2$의 양이 증가할수록 비정질이 형성되었다. 박막의 표면 형상은 미세하고 불연속 아일랜드 형태로 변화하였다.

• 산업기술연구
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• 제19권
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• pp.101-105
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• 1999

Ultra thin $Ta_2O_5$ gate dielectrics were prepared by RTMOCVD (rapid thermal metal organic chemical vapor deposition) using Ta source $TaC_{12}H_{30}O_5N$ and $O_2$ gaseous mixtures. As a result, $Ta_2O_5$ thin films showed significantly low leakage current compared to $SiO_2$ of identical thickness, which was due to the stabilization of the interfacial layer by NO ($SiO_xN_y$) passivation layer. The conduction of leakage current in $Ta_2O_5$ thin films was described by the hopping mechanism of Poole-Frenkel (PF) type.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.123-124
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• 2005

We investigated the effect of a Ta/TaN Cu diffusion barrier existence on the reliability and the electrical performance of Cu dual-damascene interconnects. A high EM performance in Cu dual-damascene structure was observed the BCV(barrier contact via) interconnect structure to remain Ta/TaN barrier layer. Via resistance was decreased DCV interconnect structure by bottomless process. This structure considers that DCV interconnect structure has lower activation energy and higher current density than BCV interconnect structure. The EM failures by BCV via structure were formed at via hole, but DCV via structure was formed EM fail at the D2 line. In order to improve the EM characteristic of DCV interconnect structure by bottomless process, after Ta/TaN diffusion barrier layer in via bottom is removed by Ar+ resputtering process, it is desirable that Ta thickness is thickly made by Ta flash process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.97-100
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• 2001

This paper presents the characteristics of Ta-N thin-film strain gauges as high-temperature strain gauges, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(4∼16 %)N$_2$). These films were annealed for 1 hour in 2x10$\^$-6/ Torr vaccum furnace range 500∼1000$^{\circ}C$. The optimized conditions of Ta-N thin-film strain gauges were annealing condition(900$^{\circ}C$, 1 hr.) in 8% N$_2$ gas flow ratio deposition atmosphere. Under optimum conditions, the Ta-N thin-films for strain gauges is obtained a high resistivity, $\rho$=768.93 ${\mu}$Ω cm, a low temperature coefficient of resistance, TCR=-84 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=4.12.

• 한국전기전자재료학회논문지
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• 제26권5호
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• pp.335-340
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• 2013

In this study, the plasma etching of the TaN thin film with $CH_4/BCl_3/Ar$ gas chemistries was investigated. The etch rate of the TaN thin film and the etch selectivity of TaN to $SiO_2$ was studied as a function of the process parameters, including the amount of $CH_4$. X-ray photoelectron spectroscopy (XPS) and Field-emission scanning electron microscopy (FE-SEM) was used to investigate the chemical states of the surface of the TaN thin film.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1995년도 추계 학술발표 강연 및 논문개요집
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• pp.38-40
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• 1995