• Proceedings of the Korean Information Science Society Conference
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• 2012.06d
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• pp.137-139
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• 2012

최근 다양한 모바일 플랫폼과 애플리케이션 스토어에 대한 문제가 점점 커져가고 있다. 그에 발맞추어 최근 애플리케이션 시장규모는 대대적으로 웹으로 넘어가고 있으며, 스토어 또한 같이 성장해 가고 있다. 그러나 현재 출시된 웹 애플리케이션 스토어는 한 스토어에 종속적인 단점을 가지고 있어, 사용자로부터 스토어에 종속된 애플리케이션에 대하여 타 플랫폼에서는 애플리케이션을 사용할 수 없어 사용자에게 폭넓은 선택을 제한하며 불편을 가져다준다. 본 논문에서는 이러한 단점에 대한 해결책으로 웹 애플리케이션 스토어의 연동 모듈을 설계하고, 이를 토대로 웹 애플리케이션 연동 시나리오를 구현한다. 웹 애플리케이션 스토어의 기본 구조는 OMA(Open Mobile Alliance)에서 제안한 TAS(Telco's Application Store)를 따랐으며 기존 TAS의 모듈에 연동을 위한 모듈을 추가 확장하여 설계하고 이를 OWS(Open Web Store)라 명한다. OWS는 차세대 웹 언어를 사용하는 웹 애플리케이션을 다루기 때문에 애플리케이션 플랫폼에 독립적인 성향을 가지므로 소비자는 운영체제, 브라우저, 단말기 등의 종류에 구애 받지 않고 다양한 애플리케이션을 접할 수 있다. 본 논문에서 OWS간 연동을 위한 시나리오를 구상하고 프로토타입을 구현하여 기존의 애플리케이션의 단점을 보완할 수 있는 방법을 제시한다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.11
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• pp.870-875
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• 2011

The $(Na_{0.52}K_{0.44})(Nb_{0.9}Sb_{0.06})O_3-0.04dLiTaO_3$ (NKNS-LT) ceramics with various $Cu_2O$ concentration were prepared by the conventional solid state reaction method. The $Cu_2O$ content was varied in the range of 0.1~0.4 wt%. The effects of Cu on microstructure, crystallographic phase transition, and piezoelectric properties were investigated. The material with perovskite structure had a tetragonal phase (T1) when $Cu_2O$ concentration was less than 0.3 wt% and it transformed to another tetragonal phase (T2) when the $Cu_2O$ amount was greater than 0.3 wt%. The phase boundary between T1 and T2 phases appeared at around 0.3 wt% of $Cu_2O$ concentration. The piezoelectric properties were shown the maximum values at the composition of the phase boundary. The electro-mechanical coupling factor ($k_p$) was 0.42 and the piezoelectric charge constant ($d_{33}$) was 245 pC/N at the 0.3 wt% of $Cu_2O$ concentration.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.163-163
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• 1999

MOSFET, MESFET 그리고 MODFET는 Logic ULSIs, high speed ICs, RF MMICs 등에서 중요한 역할을 하고 있으며, 그것의 gate electrode, contact, interconnect 등의 물질로는 refractory metal을 이용한 CoSi2, MoSi2, TaSi2, PtSi2, TiSi2 등의 효과를 얻어내고 있다. 그중 TiSi2는 비저항이 가장 낮고, 열적 안정도가 좋으며 SAG process가 가능하므로 simpler alignment process, higher transconductance, lower source resistance 등의 장점을 동시에 만족시키고 있다. 최근 소자차원이 scale down 됨에 따라 TiSi2의 silicidation 과정에서 C49 TiSi2 phase(high resistivity, thermally unstable phase, larger grain size, base centered orthorhombic structure)의 출현과 그것을 제거하기 위한 노력이 큰 issue로 떠오르고 있다. 여러 연구 결과에 따르면 PAI(Pre-amorphization zimplantation), HTS(High Temperature Sputtering) process, Mo(Molybedenum) implasntation 등이 C49를 bypass시키고 C54 TiSi2 phase(lowest resistivity, thermally stable phase, smaller grain size, face centered orthorhombic structure)로의 transformation temperature를 줄일 수 있는 가장 효과적인 방법으로 제안되고 있지만, 아직 그 문제가 완전히 해결되지 않은 상태이며 C54 nucleation에 대한 physical mechanism을 밝히진 못하고 있다. 본 연구에서는 증착 시 기판온도의 변화(400~75$0^{\circ}C$)에 따라 silicon 위에 DC/RF magnetron sputtering 방식으로 Ti/Si film을 각각 제작하였다. 제작된 시료는 N2 분위기에서 30~120초 동안 500~85$0^{\circ}C$의 온도변화에 따라 RTA법으로 각각 one step annealing 하였다. 또한 Al을 cosputtering함으로써 Al impurity의 존재에 따른 영향을 동시에 고려해 보았다. 제작된 시료의 분석을 위해 phase transformation을 XRD로, microstructure를 TEM으로, surface topography는 SEM으로, surface microroughness는 AFM으로 측정하였으며 sheet resistance는 4-point probe로 측정하였다. 분석된 결과를 보면, 고온에서 제작된 박막에서의 C54 phase transformation temperature가 감소하는 것이 관측되었으며, Al impuritydmlwhswork 낮은온도에서의 C54 TiSi2 형성을 돕는다는 것을 알 수 있었다. 본 연구에서는 결론적으로, 고온에서 증착된 박막으로부터 열적으로 안정된 phase의 낮은 resistivity를 갖는 C54 TiSi2 형성을 보다 낮은 온도에서 one-step RTA를 통해 얻을 수 있다는 결과와 Al impurity가 존재함으로써 얻어지는 thermal budget의 효과, 그리고 그로부터 기대할 수 있는 여러 장점들을 보고하고자 한다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.174-174
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• 2008

Non-volatile memories using ferroelectric-gate field-effect transistors (Fe-FETs) with a metal/ferroelectric/semiconductor gate stack (MFS-FETs) make non-destructive read operation possible. In addition, they also have features such as high switching speed, non-volatility, radiation tolerance, and high density. However, the interface reaction between ferroelectric materials and Si substrates, i.e. generation of mobile ions and short retention, make it difficult to obtain a good ferroelectric/Si interface in an MFS-FET's gate. To overcome these difficulties, Fe-FETs with a metal/ferroelectric/insulator/semiconductor gate stack (MFIS-FETs) have been proposed, where insulator as a buffer layer is inserted between ferroelectric materials and Si substrates. We prepared $SrBi_2Ta_2O_9$ (SBT) film as a ferroelectric layer and $LaZrO_x$ (LZO) film as a buffer layer on p-type (100) silicon wafer for making the MFIS-FET devices. For definition of source and drain region, phosphosilicate glass (PSG) thin film was used as a doping source of phosphorus (P). Ultimately, the n-channel ferroelectric-gate FET using the SBT/LZO/Si Structure is fabricated. To examine the ferroelectric effect of the fabricated Fe-FETs, drain current ($I_d$) versus gate voltage ($V_g$) characteristics in logarithmic scale was measured. Also, drain current ($I_d$) versus drain voltage ($V_d$) characteristics of the fabricated SBT/LZO/Si MFIS-FETs was measured according to the gate voltage variation.

• Acta Via Serica
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• v.2 no.1
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• pp.31-47
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• 2017

The corridors to the north and south of the $Takl{\bar{a}}m{\bar{a}}k{\bar{a}}n$ (塔克拉瑪干 Ta-ke-la-ma-gan) Desert are the most important regions for cultural confluence on the Silk Road, where caravans made it to the Chinese capital or the Korean Peninsula by the northern road, through the city of Turfan, or the southern path of Khutan. Being an important part of the Silk Road in the course of history, this region was heavily influenced by the cultures of various nations and ethnic communities whose merchants utilized the road to advance their business. The region's language, writing system and literary structure were also affected, so much so that in the course of its tumultuous history, many words, phrases and terms belonging to neighboring cultures found their way into the region, leaving their mark on its linguistic structure. Of the cultural exchanges that took place between the peoples of the region, conspicuous traces can be seen in the architecture, music, literature, texts, and inscriptions. Located in the Turfan region, the minaret of Su Gong (蘇公 Su Gong ) is host to an inscription which bears many signs of such exchanges. As so far no independent research has been conducted to identify the cultural, literary and structural features conveyed in this inscription, the present paper is an attempt to study the inscription in terms of the script, language and syntax in order to unravel the effects of cultures prevalent on the Silk Road on this particular inscription. This study mainly aims to investigate the linguistic structure of the inscription and the impact of the Persian language on Silk Road culture. In fact, we approach the inscription as a symbol of cultural exchange on the Silk Road and will focus on the tradition of Persian inscription-making which affected the Turfan inscription.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.111-115
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• 2003

200nm 정도의 두께를 가진 SBT 박막이 liquid delivery MOCVD 공정에 의해 (111) oriented Pt/Ti/$SiO_2$/Si 기판 위에 증착되었다 이 실험에서는 $Sr(TMHD)_2$tetraglyme, $Bi(ph)_3$ 그리고 $Ta(O^iPr)_4$(TMHD)를 출발 물질로 사용하였다. Sr 출발 물질의 열적 안정화를 위해서 adduct로 tetraglyme를 사용하여 실험하였고 유기 용매로는 n-butyl acetate를 사용하였다 Substrate temperature와 reactor pressure는 각각 $570^{\circ}C$와 5Torr로 유지시켰다. 또한 vaporizer의 용도는 $190-200^{\circ}C$, 그리고 delivery line 의 온도는 vaporizer 보다 높게 유지 $(220-230^{\circ}C)$하여 출발 용액을 분당 0.1ml로 50분간 주입하였다. 수송가스로 Ar, 산화제로 $O_2$ 가스를 사용하였다. 제조한 SBT 박막은 $750^{\circ}C$에서 열처리한 후 인가전압 3V와 5V에서 $2P_r$값이 각각 6.47, $8.98{\mu}C/cm^2$이었으며, $2E_c$값은 인가전압 3V와 5V에서 각각 2.05, 2.31V이었다 그리고 $800^{\circ}C$에서는$750^{\circ}C$에서 열처리한 SBT 박막보다 다소 우수한 이력특성을 나타내어 $2P_r$ 값은 인가전압 3V와 5V에서 각각 7.59, $10.18{\mu}C/cm^2$ 이었으며, $2E_c$값은 인가 전압 3V와 5V에서 각각 2.00, 2.21V 이었다.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.10
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• pp.79-83
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• 1971

To investigate the effects of seed treatments and liming on nodulation and growth of lucerne(Medicago sativa L.) in an upland yellow-brown earth in N.Z. the five levels of seed treatments(Uninoculated, Inoculated, Inoculated plus lime pelleted, Inoculated plus 50/50 phosphate/dolmite pelleted, Inoculated plus ta1c pelleted), and 2 levels of lime applications (0, 25kg/10a) were compared and their interactions were observed, and then the following results were obtained. 1. In oder to obtain the effective nodulation of lucerne on acid soil it is usually necessary to apply lime and inoculate the seed. 2. The coating of inoculated lucerne seed with adequate materials will promote the nodulation. 3. The pelleting of lucerne seed may be a of reducing the need for the heavy liming. 4. The finely grounded lime was the best to use origin upland yellow-brown earth. 5. When the seed were not inoculated or pelleted with inferior material, liming is very effective for the nodulation and growth of lucerne. 6. The pelleting seed will reduce the laborious work and expenditure.

• The Plant Pathology Journal
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• v.36 no.6
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• pp.558-569
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• 2020

Fusarium head blight (FHB) is a devastating fungal disease of wheat (Triticum aestivum L.). The lack of genetic resources with stable FHB resistance combined with a reliable and rapid screening method to evaluate FHB resistance is a major limitation to the development of FHB resistant wheat germplasm. The present study utilized an immature wheat spike culture method to screen wheat spike culture derived variants (SCDV) for FHB resistance. Mycotoxin concentrations determined by liquid chromatography-tandem mass spectrometry (LC-MS/MS) correlated significantly (P < 0.01) with FHB severity and disease progression during in vitro spike culture. Selected SCDV lines assessed for FHB resistance in a Fusarium field disease nursery in Carman, Manitoba, Canada in 2016 showed significant (P < 0.01) correlation of disease severity to the in vitro spike culture screening method. Selected resistant SCDV lines were also crossed with an elite cv. CDC Hughes and the progeny of F₂ and BC₁F₂ were screened by high resolution melt curve (HRM) analyses for the wheat UDP-glucosyl transferase gene (TaUGT-3B) single nucleotide polymorphism to identify resistant (T-allele) and susceptible (G-allele) markers. The progeny from the crosses were also screened for FHB severity using the immature spike culture method and identified resistant progeny grouped according to the HRM genotyping data. The results demonstrate a reliable approach using the immature spike culture to screen for FHB resistance in progeny of crosses in early stage of breeding programs.

• Tribology and Lubricants
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• v.37 no.3
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• pp.106-111
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• 2021

There are several studies on reducing the friction that occurs on the relative sliding contact surface of moving parts under extreme environments. In particular, a solid lubricated bearing is studied to solve the tribological problem with friction reduction and durability parts using solid lubricants (lead or silver) in a vacuum atmosphere. Galinstan is mainly used as a liquid metal lubricant, but it is inevitable to have limited tribological applications owing to its high coefficient of friction. Many researchers work on surface texturing for surface modification and precision processing methods. To increase durability and low friction, DLC coating with hydrophobicity is applied on the contact surface texture. Therefore, using an untextured specimen, a dimple specimen, and a DLC-coated dimple specimen under liquid metal lubrication, this paper presents the following experimental sliding friction characteristics in the sliding friction test. 1) The average coefficient of friction of the DLC-coated dimple specimen and dimple specimen are lower compared to that of a non-patterned specimen. 2) In the DLC-coated dimple specimens, the average coefficient of friction changes according to the change in the dimple density. 3) DLC-coated dimple specimens with a density of 12.5 have the lowest average coefficient of friction under 41.6 N of normal load and 143.3 RPM.

• Molecules and Cells
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• v.46 no.12
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• pp.764-777
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• 2023

Recombinant immunotoxins (RITs) are fusion proteins consisting of a targeting domain linked to a toxin, offering a highly specific therapeutic strategy for cancer treatment. In this study, we engineered and characterized RITs aimed at mesothelin, a cell surface glycoprotein overexpressed in various malignancies. Through an extensive screening of a large nanobody library, four mesothelin-specific nanobodies were selected and genetically fused to a truncated Pseudomonas exotoxin (PE24B). Various optimizations, including the incorporation of furin cleavage sites, maltose-binding protein tags, and tobacco etch virus protease cleavage sites, were implemented to improve protein expression, solubility, and purification. The RITs were successfully overexpressed in Escherichia coli, achieving high solubility and purity post-purification. In vitro cytotoxicity assays on gastric carcinoma cell lines NCI-N87 and AGS revealed that Meso(Nb2)-PE24B demonstrated the highest cytotoxic efficacy, warranting further characterization. This RIT also displayed selective binding to human and monkey mesothelins but not to mouse mesothelin. The competitive binding assays between different RIT constructs revealed significant alterations in IC₅₀ values, emphasizing the importance of nanobody specificity. Finally, a modification in the endoplasmic reticulum retention signal at the C-terminus further augmented its cytotoxic activity. Our findings offer valuable insights into the design and optimization of RITs, showcasing the potential of Meso(Nb2)-PE24B as a promising therapeutic candidate for targeted cancer treatment.