• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2016.05a
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• pp.583-585
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• 2016

The recent advances in wireless networks area have led to new techniques, such as small cells or full-duplex (FD) transmission, have also been developed to further increase the network capacity. Particularly, full-duplex communication promises expected throughput gain by doubling the spectrum compared to half-duplex (HD) communication. Because this technique permits one set of frequencies to simultaneously transmit and receive signals. In this paper, we focus on the binary power control for the users and the base stations in full-duplex multiple cellulars wireless networks to obtain optimal sum-rate under the effect interference and noise. We investigate with a scenario in there one carrier is assigned to only one user in each cell and construct a model for this problem. In this work, we apply the binary power control by the its simplification in the implemented algorithm for both uplink and downlink simultaneously to maximize sum data rate of the system. At first, we realize the 2-cells case separately to check the optimal power allocation whether being binary. Then, we carry on with N-cells case in general through properties of binary power control.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1679-1681
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• 2000

휴대 전화 및 캠코더 등의 휴대기기의 보급이 급격히 확산됨에 따라 기기의 소형화와 경량화가 제품 개발의 가장 큰 과제로 떠오르게 되었다. 특히 전자기기들은 기능이 다양해질수록 필요로 하는 부품이 늘어나게 되고, 그 결과로 불가피하게 일차로 공급되는 단일 저압의 전원으로는 구동시킬 수 없는 부분이 생기게 된다. 따라서 그들 개별 소자 또는 부품들이 구동되기 위해서는 그에 필요한 전력이 공급되어야 한다. 이러한 역할을 담당하는 것이 SMPS이며 본 연구에서는 SMPS의 전원 안정화를 담당하는 인덕터의 평면화를 구현하고자 고주파 대역에서 우수한 자기적 특성 및 높은 포화 자화 값으로 소자의 load current를 증가시킬 수 있는 PeTaN 자성 박막과 전기 저항을 낮추기 위한 MEMS 기술을 응용한 높은 aspect을 지닌 Cu 코일부, 전기적 절연을 담당하는 절연막을 사용한 평면형 인덕터를 제조하였으며, 인덕터의 특성인 인덕턴스는 약 5MHz까지 1.5${\mu}H$를 나타내며 낮은 전기 저항($2\Omega$)을 보여주었다. 특히 최근 사용되어지는 전자 부품들의 저전력, 저전압, 높은 구동전류의 실현을 위해서는 높은 load current를 지녀야 한다. 측정된 인덕터의 load current에 따른 효율은 약 200mA까지 78%의 효율을 보여 주었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.158-161
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• 2003

The primary aim of this study is to investigate new semi-abrasive free slurry including acid colloidal silica and hydrogen peroxide for copper chemical-mechanical planarization (CMP). In general, slurry for copper CMP consists of colloidal silica as an abrasive, organic acid as a complex-forming agent, hydrogen peroxide as an oxidizing agent, a film forming agent, a pH control agent and several additives. We developed new semi-abrasive free slurry (SAFS) including below 0.5% acid colloidal silica. We evaluated additives as stabilizers for hydrogen peroxide as well as accelerators in tantalum nitride CMP process. We also estimated dispersion stability and Zeta potential of the acid colloidal silica with additives. The extent of enhancement in tantalum nitride CMP was verified through anelectrochemical test. This approach may be useful for the application of single and first step copper CMP slurry with one package system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.8
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• pp.632-635
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• 2011

Additions (ZnO, CuO) doped $0.98(Na_{0.5}K_{0.5})NbO_3-0.02Li(Sb_{0.17}Ta_{0.83})O_3$ (0.98NKN-0.02LST-x) lead free piezoelectric ceramics have been fabricated by ordinary sintering technique. The effects of additions doping on the dielectric, piezoelectric, and ferroelectric properties of the ceramics were mainly investigated. X-ray diffraction of the sample appeared orthorhombic phase. The specimen doped with additions exhibits enhanced electrical properties ($d_{33}$= 153 pC/N). These results indicate that the 0.98NKN-0.02LST-x ceramics is a promising candidate for lead-free piezoelectric ceramics for applications such as piezoelectric actuators, harmonic oscillator and so on.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.694-695
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• 2006

As a candidate for lead-free piezoelectric materials, dense $95(Na_{0.5}K_{0.5})NbO_3-5LiTaO_3$ (NKN-5LT) ceramics were developed by conventional sintering process. Sintering temperature was lowered by adding $Li_2O$ as a sintering aid. The electrical properties of NKN-5LT ceramics were investigated as a function of $Li_2O$ concentration. At the addition of 1 mol% $Li_2O$, electromechanical coupling factor $(k_P)$ and piezoelectric coefficient $(d_{33})$ of NKN-5LT ceramics were found to reach the highest values of 0.37 and 250 pC/N, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.171-172
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• 2007

We fabricated the metal-ferroelectric-insulator-semiconductor filed-effect transistors (MFIS-FETs) using the $(Bi,La)_4Ti_3O_{12}\;and\;LaZrO_x$ thin films. The $LaZrO_x$ thin film had a equivalent oxide thickness (EOT) value of 8.7 nm. From the capacitance-voltage (C-V) measurements for an Au/$(Bi,La)_4Ti_3O_{12}/LaZrO_x$/Si MFIS capacitor, a hysteric shift with a clockwise direction was observed and the memory window width was about 1.4 V for the bias voltage sweeping of ${\pm}9V$. From drain current-gate voltage $(I_D-V_G)$ characteristics of the fabricated Fe-FETs, the obtained threshold voltage shift (memory window) was about 1 V due to ferroelectric nature of BLT film. The drain current-drain voltage $(I_D-V_D)$ characteristics of the fabricated Fe-FETs showed typical n-channel FETs current-voltage characteristics.

• Korean Journal of Applied Biomechanics
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• v.31 no.4
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• pp.270-275
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• 2021

Objective: The purpose of this study was to evaluate 16 muscles activity according to three exercise intensity when performing Deadlift and Upright row. Method: To accomplish the purpose of the study, subjects (n=10) were performed Electromyography (EMG) measurement for 16 different muscles. The experimental movements were Deadlift and Upright row, measured five times for each intensity (40%, 60%, 80%) of 1RM. This study normalized the EMG values through RVC for comparative analysis. Results: The results were summarized as follows: As a result of Deadlift, there was significant difference in the mean EMG value according to the exercise intensity in all muscles except RA, PM and BB (p<.05). As a result of Upright row, There was significant difference in the mean EMG value according to the exercise intensity in all muscles except BF, TA, GN, RA and UT (p<.05). Conclusion: This study allowed us to know the activities of major muscles according to the exercise intensity for 16 different muscles when performing Deadlift and Upright row.

• Journal of the Semiconductor & Display Technology
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• v.21 no.3
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• pp.50-56
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• 2022

In order to process a vast amount of data, there is demand for a new system with higher processing speed and lower energy consumption. To prevent 'memory wall' in von Neumann architecture, RRAM, which is a neuromorphic device, has been researched. In this paper, we summarize the features of RRAM and propose the device structure for characteristic improvement. RRAM operates as a synapse device using a change of resistance. In general, the resistance characteristics of RRAM are nonlinear and random. As synapse device, linearity and uniformity improvement of RRAM is important to improve learning recognition rate because high linearity and uniformity characteristics can achieve high recognition rate. There are many method, such as TEL, barrier layer, NC, high oxidation properties, to improve linearity and uniformity. We proposed a new device structure of TiN/Al doped TaO_x/AlO_x/Pt that will achieve high recognition rate. Also, with simulation, we prove that the improved properties show a high learning recognition rate.

• Fisheries and Aquatic Sciences
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• v.25 no.3
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• pp.158-166
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• 2022

The complete mitochondrial genome of Tremoctopus violaceus was sequenced to analyze its organization and phylogenetic status within the order Octopoda. The mitochondrial genome of T. violaceus had a structure and organization similar to that of other Octopoda. The content of the nucleotides A, C, G, and T was 31.68 %, 7.71 %, 20.02 %, and 40.58 %, respectively. All protein-coding genes (PCG) began with the ATG codon, excluding ND4 and ATP6, which began with ATC and ATT, respectively, and terminated with TAG, TAA, TA, or T. Codons for isoleucine were the most used codons, whereas those for arginine were used the least. Two extra tRNAs, trnN and trnL, were found in the control region. These tRNAs have a D-armless structure. The control region had excess A + T content (83.16 %) and a stem-loop structure with two elements, which is reported for the first time in Octopoda by our study. Bayesian inference using 13 PCG revealed that Octopus and Octopodidae were polyphyletic, and that Tremoctopodidae diverged relatively earlier within Octopoda. The mitochondrial genome of T. violaceus and its characteristics may help to understand the evolutionary history of Octopoda and establish a marine biodiversity conservation strategy.

• Electrical & Electronic Materials
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• v.16 no.9
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• pp.64.1-64
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• 2003

A metal-ferroelectric [SrBi$_2$Ta$_2$O$\_$9/ (SBT)-high-k-insulator(PrOx)-semiconductor(Si) structure has been fabricated and evaluated as a key part of metal-ferroelectric-insulator-semiconductor-field-effect-transistor MFIS-FET memory, aiming to improve the memory retention characteristics by increasing the dielectric constant in the insulator layer and suppressing the depolarization field in the SBT layer. A 20-nm PrOx film grown on Si(100) showed both a high of about 12 and a low leakage current density of less than 1${\times}$ 10e-8 A/$\textrm{cm}^2$ at 105 MV/cm. A 400-nm SBT film prepared on PrOx/Si shows a preferentially oriented (105) crystalline structure, grain size of about 130 nm and subface roughness of 3.2 nm. A capacitance-voltage hysteresis is confirmed on the Pt/SBT/PrOx/Si diode with a memory window of 0.3V at a sweep voltage width of 12 V. The memory retention time was about 1 104s, comparable to the conventional Pt/SBT/SiO$\_$x/N$\_$y/(SiO$\_$N/)/Si. The gradual change of the capacitance indicates that some memory degradation mechanism is different from that in the Pt/SBT/SiON/Si structure.