Effect of SiO2 Buffer Layer Thickness on the Device Reliability of the Amorphous InGaZnO Pseudo-MOS Field Effect Transistor (SiO2 완충층 두께에 따른 비정질 InGaZnO Pseudo-MOS Field Effect Transistor의 신뢰성 평가)
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- Journal of the Korean Institute of Electrical and Electronic Material Engineers
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- v.25 no.1
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- pp.24-28
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- 2012