• 한국세라믹학회지
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• 제42권9호
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• pp.599-601
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• 2005

The coarsening process of two different $BaTiO_3$ single crystal seeds, one with a (111) double twin and the other without it, was investigated. Due to the presence of Twin Plane Reentrant Edge (TPRE), the coarsening rate of the twinned seed crystal was significantly higher than that without a twin. For the coarsening by the 2-dimensional nucleation and lateral growth, the energy barrier for nucleation at the TPRE was analyzed to be about a half compared with that at the terrace planes.

• 한국세라믹학회지
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• 제36권12호
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• pp.1310-1315
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• 1999

• 한국주조공학회지
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• 제26권3호
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• pp.140-145
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• 2006

Sr, added in the hypereutectic Al-Si alloys, is absorbed on the surfaces of primary Si as well as eutectic Si, and can change the growth mode of primary Si from non-faceted to faceted mode, as the amount of Sr increases larger than 0.04 wt.%, even though it cannot affect the grain size of primary Si, significantly. The EBSD analysis shows that the traction of ${\Sigma}3$ boundary(twin boundary) increases as the amount of Sr in the hypereutectic Al-Si alloys increase until the over-modification occurs at 1.6 wt.%Sr and proves that the change in growth mode of primary Si results from the change of TPRE growth to IIT growth.

• 한국결정학회지
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• 제14권2호
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• pp.93-104
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• 2003

The crystals of group-Ⅲ nitride semiconductors with wurtzite structure exhibit a strong polarity. Especially, GaN has characteristics of different growth rate, anisotropic electrical and optical properties due to the polarity. In this work, GaN epilayer was grown and the polarities of the crystals were observed by the chemical wet etching and SP-EFM. GaN thin films were deposited on c-plane A1₂O₃ substrate under the variations of growth conditions by HVPE such as the deposition temperature of the buffer layer, the deposition time, the ratio of Group-V and Ⅲ and the deposition temperature of the film. The adquate results were obtained under the conditions of 500℃, 90 seconds, 1333 and 1080℃, respectively. It is observed that the GaN layer grown without the buffer layer has N-polarity and the GaN layer grown on the buffer layer has Ga-polarity. Fine crystal single particles were grown on c-plane A1₂O₃ and SiO₂, layer. The external shape of the crystal shows ｛10-11｝｛10-10｝(000-1) planes as expected in the PBC theory and anisotropic behavior along c-axis is obvious. As a result of etching on each plane, (000-1) and ｛10-11｝planes were etched strongly due to the N-polarity and ｛10-10｝ plane was not affected due to the non-polarity. In the case of the crystal grown on c-plane A1₂O₃, two types of crystals were grown. They were hexagonal pyramidal-shape with ｛10-11｝plane and hexagonal prism with basal plane. The latter might be grown by twin plane reentrant edge (TPRE) growth.

• 한국주조공학회지
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• 제8권4호
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• pp.453-458
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• 1988

Al-Si alloy powder produced by the gas atomizer showed fine eutectic structure between ${\alpha}-dendrites$, that was grown by coupled growth, and there remained small amount of ${\alpha}$ in Al - 20 wt% Si alloy. The morphology of Si in the eutectic structure was largely influenced by the recalescence caused by solidification latent heat, and that was thought to be due to decrement of the surface energy of Si. In modified eutectic Si by rapid solidification, fine twin about $0.01\;{\mu}m$ was observed and growth direction of eutectic Si was <112>. This fact implied that the growth mechanism of eutectic Si in rapid solidification was related to TPRE mechanism. Due to rapid solidification Si was soluble in ${\alpha}-phase$ in Al - 12.6wt%Si alloy up to about 3.4wt%, and the solubility of Si in ${\alpha}-phase$ reaches the equilibrium solubility stare after 60min, holding when it was held isothermally at $253-296^{\circ}C$.

• 한국재료학회지
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• 제27권10호
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• pp.544-551
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• 2017

In order to develop a new commercial Al-12%Si casting alloy with improved physical properties, we investigated the effect of adding Sr and TiB to the alloy. Al-12%Si alloys were prepared by die casting at $660^{\circ}C$. The eutectic temperature of the Sr-modified Al-12%Si alloy decreased to $9^{\circ}C$ and the mushy zone region increased. The shape of the Si phase changed from coarse acicula to fine fiber with the addition of Sr. The addition of TiB in the Al-12%Si alloy reduced the size of the primary ${\alpha}$-Al and eutectic Si phases. When Sr and TiB were added together, it worked more effectively in refinement and modification. The density of twins in the Si phase-doped Sr increased and the width of the twins was refined to 5 nm. These results are related to the impurity induced twinning(IIT) growth.

• 전자공학회논문지 IE
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• 제45권4호
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• pp.1-6
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• 2008

본 연구에서는 MB-OFDM UWB 응용을 위하여 복잡도를 낮추고 전력소모를 줄인 고속 스위칭 주파수 합성기를 다룬다. 제안된 구조는 밴드 그룹 1 주파수를 생성하기 위하여 3960 MHZ LC VCO, 528 MHz 링 오실레이터, 수동 믹서 및 LC-조정 Q-향상 BPF를 사용한다. 인접 채널 제거비는 3432 MHz 신호에서 -40 dBc 이하, 그리고 4488 MHz 신호에서 -44 dBc 이하의 특성을 확인하였다. 요구되는 출력 신호를 얻기 위하여 SCL 구조의 고속 스위칭 MUX를 사용하여 2.2 ns 이하의 밴드 스위칭 시간을 얻었다. 전체 전력 소모는 1.8 V 전원을 사용하여 47.9 mW이다.