• Korean Journal of Veterinary Research
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• v.34 no.1
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• pp.153-163
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• 1994

A study on quinolone antibacterial (pefloxacin methanesulfonate) was performed to use for the drug of fisheries. Petloxacin was proved excellent in antibacterial activity and resistance against fish pathogens when compared with the existing antibacterials. And any side effect was not observed during the period of indicated use. An outline of MIC(Minimal Inhibitory Concentration) was $1.6{\sim}6.4{\mu}g/ml$, $TLm_{48h}$ value were 380~420 ppm in Israeli carp(Cyprinus caprio) and 2100~2300 ppm in flounder(Paralichthys olivaceus). The residual time of fish body was less than 15 days. So we can treat some bacterial disease of fish by the dosage of 100 g/day/ton of fish body weight for 3 days and pefloxacin is thought to be used effectively and widely against most bacterial fish pathogens.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.101.2-101.2
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• 2012

스크린 프린팅 기술은 공정이 단순하고 값이 싸며 대량생산에 용이하기 때문에 결정질 실리콘 태양전지의 전극형성에 널리 사용되고 있다. 스크린 프린팅 기술을 이용한 전면 전극은 일반적으로 은 페이스트 (Ag paste)를 패시배이션 층이 증착 된 실리콘 기판 위에 인쇄를 한 후 고온의 소성 공정을 통하여 형성이 된다. 은 페이스트가 실리콘 에미터 층과 접촉하기 위해서는 패시배이션 층을 뚫고 접촉이 형성 되어야 한다. 이 과정에서 소성 후 은 전극과 실리콘 기판 사이의 계면에는 glass layer가 형성되어 접촉저항을 높이고 태양전지의 직렬 저항을 높이는 인자로 작용한다. 따라서 본 연구는 형성된 은 전극과 실리콘 사이의 계면 특성을 평가하고 glass layer의 두께와 접촉 저항 사이의 관계를 분석하기 위해서 진행되었다. 접촉저항은 trasnfer length method (TLM) 법을 이용하여 측정을 하였고 glass layer의 두께는 field emission scanning electron microscope(FE-SEM)을 이용하여 평가하였다. 또한 glass layer의 두께에 따른 전반적인 태양전지의 특성을 solar simulator, probe station, suns-Voc를 통하여 평가하였다. 결과적으로 glass layer의 두께에 따라서 접촉저항이나 직렬저항이 변화하는 것을 관찰 할 수 있었고 이를 정량적으로 분석하고자 하는 노력이 시도되었다. 이러한 변화는 또한 태양전지의 특성에 영향을 미치는 것을 확인할 수 있었다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.100.2-100.2
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• 2012

Surface texturing of crystalline silicon is carried out in alkaline solutions for anisotropic etching that leads to random pyramids of about $10{\mu}m$ in size. Recently textured pyramids size gradually reduced using new solution. In this paper, we investigated that texture pyramids size had an impact on emitter property and front electrode (Ag) contact. To make small (${\sim}3{\mu}m$) and large (${\sim}10{\mu}m$) pyramids size, texturing times control and one side texturing using a silicon nitride film were carried out. Then formation and quality of POCl3-diffused n+ emitter in furnace compare with small and large pyramids by using SEM images, simulation (SILVACO, Athena module) and emitter saturation current density (J0e). After metallization, Ag contact resistance was measured by transfer length method (TLM) pattern. And surface distributions of Ag crystallites were observed by SEM images. Also, performance of cell which is fabricated by screen-printed solar cells is compared by light I-V.

• Journal of Sensor Science and Technology
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• v.15 no.6
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• pp.386-390
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• 2006

This paper describes the ohmic contact formation of polycrystalline 3C-SiC films deposited on thermally grown Si wafers. In this work, a TiW (titanium tungsten) film as a contact material was deposited by RF magnetron sputter and annealed with the vacuum process. The specific contact resistance (${\rho}_{c}$) of the TiW contact was measured by using the C-TLM (circular transmission line method). The contact phase and interfacial reaction between TiW and 3C-SiC at high-temperature as also analyzed by XRD (X-ray diffraction) and SEM (scanning electron microscope). All of the samples didn't show cracks of the TiW film and any interfacial reaction after annealing. Especially, when the sample was annealed at $800^{\circ}$ for 30 min., the lowest contact resistivity of $2.90{\times}10{\Omega}cm^{2}$ was obtained due to the improved interfacial adhesion. Therefore, the good ohmic contact of polycrystalline 3C-SiC films using the TiW film is very suitable for high-temperature MEMS applications.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.23 no.8
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• pp.2120-2130
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• 1998

This paper concerns a design of programmable MPEG decoder for video processing by object unit on network. The decoder can process video data effectively by a embedded controller with stack buffers for supporting OOP (Object-Oriented Programming). The controller offers extended instructions that process several data types including 32bit integer type. In addition to that, we have a vector processor, in this decoder that can execute advanced compensation and prediction by half pixel and SA(Shape Adaptive)-IDCT of MPEG-4. Absolutors and halfers in the vector processor make this architecture extensive to a encoder. We verified the decoder with $0.6\mu\textrm{m}$ 5-Volt CMOS COMPASS library.

• Transactions on Electrical and Electronic Materials
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• v.17 no.1
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• pp.46-49
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• 2016

A thin film transistor (TFT) has been fabricated using the amorphous 0.5 wt% Si doped zinc-tin-oxide (a-0.5 SZTO) with different electrodes made of either aluminium (Al) or titanium/aluminium(Ti/Al). Contact resistance and total channel resistance of a-0.5SZTO TFTs have been investigated and compared using the transmission line method (TLM). We measured the total resistance of 1.0×10² Ω/cm using Ti/Al electrodes. This result is due to Ti, which is a material known for its adhesion layer. We found that the Ti/Al electrode showed better contact characteristics between the channel and electrodes compared with that made of Al only. The former showed a less contact and total resistance. We achieved high performance of the TFTs characteristic, such as Vth of 2.6 V, field effect mobility of 20.1 cm² V⁻¹s⁻¹, S.S of 0.9 Vdecade⁻¹, and on/off current ratio of 9.7×10⁶ A. It was demonstrated that the Ti/Al electrodes improved performance of TFTs due to enhanced contact resistance.

• Journal of Sensor Science and Technology
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• v.14 no.2
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• pp.131-135
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• 2005

This paper describes the ohmic contact formation of single crystalline 3C-SiC thin films heteroepitaxially grown on Si(001) wafers. In this work, a TiW (Titanium-tungsten) film as a contact matieral was deposited by RF magnetron sputter and annealed with the vacuum and RTA (rapid thermal anneal) process respectively. Contact resistivities between the TiW film and the n-type 3C-SiC substrate were measured by the C-TLM (circular transmission line model) method. The contact phases and interface the TiW/3C-SiC were evaulated with XRD (X-ray diffraction), SEM (scanning electron microscope) and AES (Auger electron spectroscopy) depth-profiles, respectively. The TiW film annealed at $1000^{\circ}C$ for 45 sec with the RTA play am important role in formation of ohmic contact with the 3C-SiC substrate and the contact resistance is less than $4.62{\times}10^{-4}{\Omega}{\cdot}cm^{2}$. Moreover, the inter-diffusion at TiW/3C-SiC interface was not generated during before and after annealing, and kept stable state. Therefore, the ohmic contact formation technology of single crystalline 3C-SiC using the TiW film is very suitable for high temperature MEMS applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.116-116
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• 2000

질화물 반도체는 LED, LD, Transistor, 그리고 Photodetector 등 광소자 및 전자소자를 실현할 수 있는 소재로써 최근에 각광 받고 있으며, 또한 국·내외적으로 연구가 활발히 진행되고 잇다. 질화물 발광 다이오드 제작에는 소자의 효율과 수명시간의 향상을 위하여 질화물 반도체와 금속과의 접합시 고 품질의 오믹 접합이 필수적이다. 특히 p-형 GaN의 경우에는 높은 정공 농도를 갖는 p-형 GaN를 얻기가 어렵고 GaN의 일함수에 비하여 높은 일함수를 갖는 금속이 없기 때문에 매우 낮은 접합 저항을 가지며 안정성이 매우 우수한 금 접합을 얻기가 어렵다고 알려져 있다. 또한, GaN 계열의 발광 다이오드는 일반적으로 표면 발광 다이오드 형태로 제작되기 때문에 p-형 GaN 층의 오믹 접촉으로 사용되는 금속의 전기적 특성뿐만 아니라 발광 다이오드의 활성층에서 발광되어 나오는 빛에 대한 투과도 또한 우수하여야 발광 다이오드의 효율이 우수해진다. 본 연구에서는 p-형 GaN층의 접합 금속으로 Pt(80nm)과 Ni(5nm)/Au(7nm)를 사용하여 InGaN/GaN 다중양자우물 구조의 발광 다이오드를 제작하여 전기적 특성 및 발광효율을 측정하였다. 그리고, Pt(80nm)과 p-형 GaN와의 접합시 온도 변화에 따른 전기적 특성을 TLM 방법으로 조사하고, 가시광선 영역에서의 빛에 대한 투과도를 UV/VIS spectrometer, X-ray reflectivity, 그리고 Atomic Force Microscopy 등을 이용하여 분석하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.313.1-313.1
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• 2013

현재 결정질 실리콘 태양전지의 전 후면 전극의 형성은 스크린 프린팅 방법이 주를 이루고 있다. 스크린 프린팅 방법은 쉽고 빠르게 인쇄가 가능한 반면 단가가 높고 금속 페이스트에 첨가된 여러 혼합물에 의해서 전극과 기판 사이의 저항이 크다는 단점이 있다. 본 논문에서는 스크린 프린팅 방법으로 태양전지의 seed layer를 인쇄하고, Cu도금을 진행함으로써 태양전지의 전기적 특성을 비교하였다. 주요 전극 형성을 Cu 도금을 사용함으로써 전극과 기판사이의 저항을 감소시키고 값비싼 Ag페이스트를 값싼 Cu로 대체함으로써 가격을 낮출 수 있는 장점이 있다. 실험에 사용된 Si 웨이퍼 특성은 $156{\times}156$ mm2, 200 ${\mu}m$, 0.5-3.0 ${\Omega}{\cdot}cm$ and p-type 웨이퍼를 사용하였다. 웨이퍼는 표면조직화, p-n접합 형성, 반사방지막 코팅을 하였으며 스크린 프린팅 방법을 이용해 전 후면 전극을 인쇄하고 열처리 과정을 통해 전극을 형성하였다. 이 후 전면에 Cu도금을 실행하여 태양전지를 완성하였다. 완성된 태양전지는 솔라 시뮬레이터 및 TLM패턴을 이용하여 전기적 특성을 분석하였으며, SEM과 linescan, 광학현미경 등을 이용하여 전극을 분석하였다.

• Journal of Magnetics
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• v.20 no.1
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• pp.79-85
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• 2015

This paper presents a comparative study of a Tubular Linear Machine (TLM) with an Axially Magnetized Single-sided Permanent Magnet (AMSPM) and an Axially Magnetized Double-sided Permanent Magnet (AMDPM) based on analytical field calculations. Using a two-dimensional (2-D) polar coordinate system and a magnetic vector potential, analytical solutions for the flux density produced by the stator windings are derived. This technique is significant for the design and control implementation of electromagnetic machines. The field solution is obtained by solving Maxwell's equations in the simplified boundary value problem consisting of the air gap and coil. These analytical solutions are then used to estimate the self and mutual inductances. Two different types of machine are used to verify the validity of these model simplifications, and the analytical results are compared to results obtained using the finite element method (FEM) and experimental measurement.