• Tunnel and Underground Space
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• v.21 no.1
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• pp.66-81
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• 2011

In this study, it was aimed to develop a thermal-hydraulic-mechanical coupled fracture mechanics code that models a fracture initiation, propagation and failure of underground rock mass due to thermal and hydraulic loadings. The development was based on a 2D FRACOD (Shen & Stephasson, 1993), and newly developed T-M and H-M coupled analysis modules were implemented into it. T-M coupling in FRACOD employed a fictitious heat source and time-marching method, and explicit iteration method was used in H-M coupling. The validity of developed coupled modules was verified by the comparison with the analytical result, and its applicability to the fracture initiation and propagation behavior due to temperature changes and hydraulic fracturing was confirmed by test simulations.

• Journal of Korean Society on Water Environment
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• v.38 no.2
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• pp.63-71
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• 2022

This study aimed to maximize the potential of fluorescence 3D excitation-emission matrix (EEM) for predicting the trihalomethane formation potential (THMFP) of DOM with various sources. Fluorescence spectroscopy is a useful tool for characterizing dissolved organic matter (DOM). In this study, differential spectroscopy was applied to EEM for the prediction of THMFP, in which the difference between the EEM before and after chlorination was taken into account to obtain the differential EEM (DEEM). For characterization of the original EEM or the DEEM, the maximum intensities of several different fluorescence regions in EEM, fluorescence EEM regional integration (FRI), and humification index (HIX) were calculated and used for the surrogates for THMFP prediction. After chlorination, the fluorescence intensity decreased by 77% to 93%. In leaf-derived and effluent DOM, there was a significant decrease in the protein-like peak, while a more pronounced decrease was observed in the humic-like peak of river DOM. In general, leaf-derived and effluent DOM exhibited a relatively lower THMFP than the river DOM. Our results were consistent with the high correlations between humic-like fluorescence and THMFP previously reported. In this study, HIX (r= 0.815, p<0.001), FRI region V (r=0.727, p<0.001), humic-like peak (r= 0.827, p<0.001) from DEEM presented very high correlations with THMF P. When the humic-like peak intensity was converted to a logarithmic scale, a higher correlation was obtained (r= 0.928, p<0.001). This finding suggests that the humic-like peak in DEEM can serve as a universal predictor for THM formation of DOM with various origins.

• Korean Journal of Materials Research
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• v.4 no.7
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• pp.759-766
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• 1994

Our investigation aimed to reduce the leakage current of $Ta_2O_5$ thin film capacitor by layering SnOz thin film layer under Ta thin film, thereby supplying extra oxygen ions from the $SnO_{2}$ underlayer to enhance the stoichiometry of $Ta_2O_5$ during the oxidation of Ta thin film. Tantalum was evaporated by e-beam or sputtered on p-Si wafers with various deposition temperatures and was oxidized by dry--oxygen at the temperatures between $500^{\circ}C$ and $900^{\circ}C$. Aluminum top and bottom electrodes were formed to make Al/$Ta_2O_5$/p-Si/Al or $Al/Ta_2O_5/SnO_2$p-Si/AI MIS type capacitors. LCR meter and pico-ammeter were used to measure the dielectric constants and leakage currents of the prepared thm film capacitors. XRD, AES and ESCA were employed to confirm the crystallization of the thin f~lm and the compositions of the films. Dielectric constant of $Ta_2O_5$ thin film capacitor with $SnO_{2}$ underlayer was found to be about 200, which is about 10 times higher than that of $Ta_2O_5$ thin film capacitor without $SnO_{2}$ underlayer. In addition, higher oxidation temperatures increased the dielectric constants and reduced the leakage current. Higher deposition temperature generally gave lower leakage current. $Ta_2O_5/SnO_2$ capacitor deposited at $200^{\circ}C$ and oxidized at $800^{\circ}C$ showed significantly lower leakage current, $10^{-7}A/\textrm{cm}^2$ at $4 \times 10^{5}$V/cm, compared to the one without $SnO_{2}$ underlayer. XRD showed that $Ta_2O_5$ thin film was crystallized above $700^{\circ}C$. AES and ESCA showed that initially the $SnO_{2}$, underlayer supplied oxygen ions to oxidize the Ta layer, however, Sn also diffused into the Ta thin film layer to form a new $Ta_xSn_YO_Z$ , ternary oxide layer after all.