• Journal of radiological science and technology
• /
• v.39 no.4
• /
• pp.623-630
• /
• 2016

Liver tissue damage by a radiation exposure caused a jaundice and ascitic fluid e form harden atrophy. The reason for this lies in morphological damage of a liver cells. This study tried that observe damage mechanism of the cell organelles. It was especially observed mitochondria, endoplasmic reticulum and nuclear membrane associated with energy metabolizable. also, This study had with a radio-protector development research at the same time. Radio-protector was used to alliin that has an blood flow increase. Cell observation make used of transmission electron microscope(TEM). The result of an experiment, 7Gy of whole body irradiation was caused an inflammation in cell organelles and hypertrophy of the nucleus membrane. After 20 days, The hepatocyte has been observed in a damaged membrane on peroxisome, mitochondria and vacuole of the cell organelles. After 30 days, The hepatocyte has been observed in disconnected ribosomes on a rough endoplasmic reticulum. There was looked a giant lipoblast. There was clearly normal observed a mitochondria and nucleus membrane in the hepatocyte after alliin injection. aslo, It was no damaged the nucleus membrane. therefore, It was identified portion a radio-protector effect from alliin.

• Toxicological Research
• /
• v.29 no.1
• /
• pp.43-52
• /
• 2013

Zearalenone (ZEN) is a non-steroidal estrogenic mycotoxin produced by several species of Fusarium that are found in cereals and agricultural products. ZEN has been implicated in mycotoxicosis in farm animals and in humans. The toxic effects of ZEN are well known, but the ability of an alkaline Comet assay to assess ZEN-induced oxidative DNA damage in Chang liver cells has not been established. The first aim of this study was to evaluate the Comet assay for the determination of cytotoxicity and extent of DNA damage induced by ZEN toxin, and the second aim was to investigate the ability of N-acetylcysteine amide (NACA) to protect cells from ZEN-induced toxicity. In the Comet assay, DNA damage was assessed by quantifying the tail extent moment (TEM; arbitrary unit) and tail length (TL; arbitrary unit), which are used as indicators of DNA strand breaks in SCGE. The cytotoxic effects of ZEN in Chang liver cells were mediated by inhibition of cell proliferation and induction of oxidative DNA damage. Increasing the concentration of ZEN increased the extent of DNA damage. The extent of DNA migration, and percentage of cells with tails were significantly increased in a concentration-dependent manner following treatment with ZEN toxin (p < 0.05). Treatment with a low concentration of ZEN toxin (25 ${\mu}M$) induced a relatively low level of DNA damage, compared to treatment of cells with a high concentration of ZEN toxin (250 ${\mu}M$). Oxidative DNA damage appeared to be a key determinant of ZEN-induced toxicity in Chang liver cells. Significant reductions in cytolethality and oxidative DNA damage were observed when cells were pretreated with NACA prior to exposure to any concentration of ZEN. Our data suggest that ZEN induces DNA damage in Chang liver cells, and that the antioxidant activity of NACA may contribute to the reduction of ZEN-induced DNA damage and cytotoxicity via elimination of oxidative stress.

• Applied Microscopy
• /
• v.32 no.3
• /
• pp.275-284
• /
• 2002

Granular gland regeneration in the toad after dorsal skin wound histologically was examined using scanning and transmission electron microscopy. After cutaneous wounds were induced by excision, animals were maintained in special cages for up to 20 days. In transmission electron microscopy (TEM), newly formed granular gland, though poorly developed, was seen on 4 day after injury. Epithelial cells moved toward apical region of newly formed gland. The cells had smooth surface and were not connected to other cells by desmosomes. Mitochondria rich cell (MRC) possessing long cytoplasmic processes formed a gland cavity and hemidesmosomes were found under the cell processes. Basal cavity of newly formed gland consisted of MRC, pro-granular producing cells (pGPC), and granular producing cell (GPC). Moreover it was observed that xanthophores moved to the base of the epithelial tissue on 10 day after the injury. These cells contained numerous pterinosomes and carotenoid vesicles. Immature pterinosomes were large and carotenoid vesicles were moderately electron dense. On 13 day after the injury, xanthophores contained abundant carotinoid vesicles and lammelated pterinosomes. Iridophores were also observed adjacent the developing xanthophores on 16 day post-injury. These observations indicated that regeneration of granular gland from glandular precursor cells during wound healing and subsequent expansion of the glandular cells might be dependent on maturation and proliferation of these newly formed cells.

• Korean Journal of Weed Science
• /
• v.14 no.2
• /
• pp.144-155
• /
• 1994

Scanning electron micrography and Transmission electron micrography studies were performed on the surfaces of stem(coleoptiles) of rice and barnyardgrass under various cropping patterns at 5 days after seeding or transplanting. Stem surfaces of rice under dry condition possessed rodlet-like epicuticular waxes, trichomes, stomata and cork cell layer in both broadcast and drilled rice while barnyardgrass had only thread-like epicuticular waxes, but trichomes, stomata and cork cell layers were not found. However, rice under water condition has no rodlet-like waxes, stomata and cork cells, and barnyardgrass was similar to that under dry condition. On the other hand, those on stems of 8-day and 25-day transplanted rice were well arranged and developed compared with those of direct seeded rice. Electron micrography showed significant difference in thickness of outer epidermal cell walls of rice and barnyardgrass under dry, water and transplanting condition. Thickness of outer epidermal cell was greater in transplanted rice, dry direct seeded rice, water-direct seeded rice and barnyardgrass in descending order.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.97-97
• /
• 2013

Recently, Cu2ZnSn(S,Se)4 (CZTSS), which is one of the In- and Ga- free absorber materials, has been attracted considerable attention as a new candidate for use as an absorber material in thin film solar cells. The CZTSS-based absorber material has outstanding characteristics such as band gap energy of 1.0 eV to 1.5 eV, high absorption coefficient on the order of 104 cm-1, and high theoretical conversion efficiency of 32.2% in thin film solar cells. Despite these promising characteristics, research into CZTSS based thin film solar cells is still incomprehensive and related reports are quite few compared to those for CIGS thin film solar cells, which show high efficiency of over 20%. I will briefly overview the recent technological development of CZTSS thin film solar cells and then introduce our research results mainly related to sputter based process. CZTSS thin film solar cells are prepared by sulfurization of stacked both metallic and sulfide precursors. Sulfurization process was performed in both furnace annealing system and rapid thermal processing system using S powder as well as 5% diluted H2S gas source at various annealing temperatures ranging from $520^{\circ}C$ to $580^{\circ}C$. Structural, optical, microstructural, and electrical properties of absorber layers were characterized using XRD, SEM, TEM, UV-Vis spectroscopy, Hall-measurement, TRPL, etc. The effects of processing parameters, such as composition ratio, sulfurization pressure, and sulfurization temperature on the properties of CZTSS absorber layers will be discussed in detail. CZTSS thin film solar cell fabricated using metallic precursors shows maximum cell efficiency of 6.9% with Jsc of 25.2 mA/cm2, Voc of 469 mV, and fill factor of 59.1% and CZTS thin film solar cell using sulfide precursors shows that of 4.5% with Jsc of 19.8 mA/cm2, Voc of 492 mV, and fill factor of 46.2%. In addition, other research activities in our lab related to the formation of CZTS absorber layers using solution based processes such as electro-deposition, chemical solution deposition, nano-particle formation will be introduced briefly.

• Journal of the Korean Magnetics Society
• /
• v.15 no.5
• /
• pp.276-281
• /
• 2005

We have investigated the effects of an external magnetic field on the growth direction and the grain size of electrochemically prepared CoPtP alloys. Electrodeposited CoPtP alloys were synthesized by appling an external magnetic field with 0 to 1 T to the perpendicular direction of the films. In the electrodeposited CoPtP alloys without external magnetic field, the growth direction of the alloys was mixed by fcc (111) and hop (002), but only hop (002) was observed in the alloys with 1 T external magnetic field. CoPtP alloys were grown as the columnar growth and the grain size increases with growing the alloys. With appling an external field, the grain size of the alloys was controlled less than 20 nm which is smaller than single domain of Co, and the easy axis of alloys, hcp (002) direction, was grown perpendicular to the films up to 200 nm. We could obtain the optimal thickness of the alloys and electrodeposition condition from the above results. Coercivity and squareness of CoPtP alloys taken out-of-plane are 6.1 kOe and 0.9, respectively. The magnetic properties of CoPtP alloys were measured by VSM, and the microstructural characterization and crystalline orientation measurement of the alloys were carried out by TEM and XRD.

• Membrane Journal
• /
• v.10 no.2
• /
• pp.55-65
• /
• 2000

The porous silica membrane was prepared from Si(${OC}_2H_5)_4-H_2O$ system by sol-gel method. To investigate the characteristics of gels and porous silica membrane, we examined gels and porous silica membrane using TG-DTA, X-ray diffractometer, IR spectrophotometer, BET, SEM and TEM. The optimum mole ratio of Si(OC$_2$H$_{5}$)$_4$ : $H_2O$ $C_2$H$_{5}$OH for porous silica membrane was 1 : 4.5 : 4. The porous silica membrane was obtained by heat treatment of the gel above 700 $^{\circ}C$. The specific surface area of sintered gel was 3.8 $m^2$/g to 902.3 $m^2$/g at 100 $^{\circ}C$ to 1100 $^{\circ}C$ The pore size of sintered gel was in the range 20 $\AA$~ 50$\AA$. The particle size of sintered gel was 15 nm to 30 nm at 30$0^{\circ}C$ to 700$^{\circ}C$. The performance of the porous silica membrane was investigated for the separation of $H_2$/$N_2$ gas mixture. Gas separation through porous silica membrane depends upon Knudsen flow and surface flow. The veal separation factor($\alpha$) of $H_2$/$N_2$ was 5.17 at 155.15 cmHg and $25^{\circ}C$. The real separation factor($\alpha$), head separation factor($\beta$), and tail separation factor( $\bar{B}$) increased as the pressure of permeation cell Increased.sed.

• Membrane Journal
• /
• v.14 no.4
• /
• pp.312-319
• /
• 2004

The porous SiO$_2$-B$_2$O$_3$ membrane was prepared from Si(OC$_2$$H_5$)$_4$-($CH_3$O)$_3$B-C$_2$$H_5$OH-$H_2O$ system by sol-gel method. In order to investigate the characteristics of this membrane, we examined that using BET, IR spectrophotometer, X-ray diffractometer, SEM and TEM. At $700^{\circ}C$, the surface area of SiO$_2$-B$_2$O$_3$ membrane was 354.398 $m^2$/, the median pore diameter was 0.0048 ${\mu}{\textrm}{m}$, and the particle size of SiO$_2$-B$_2$O$_3$ membrane was 7 nm. The separation properties of the gas mixture ($H_2$/$N_2$) through the SiO$_2$-B$_2$O$_3$ membrane was studied as a function of pressure. The real separation factor($\alpha$) of SiO$_2$-B$_2$O$_3$ membrane for $H_2$/$N_2$ gas mixture was 4.68 at 155.15 cmHg and $25^{\circ}C$. The real separation factor($\alpha$), head separation factor($\beta$) and tail separation factor((equation omitted)) were increased as the pressure of permeation cell increased.

• Applied Microscopy
• /
• v.39 no.2
• /
• pp.107-115
• /
• 2009

The programed cell death of the cutaneous epithelial tissue during tail regression stages in anuran tadpoles of the blackspotted frog, Rana nigromaculata were visualized by the histochemical and transmission electron microscopic techniques. Metamorphotic changes in the tail regression during the period of the Shumway stage number 31 to 33 are characterized by the disappearance of mucous layer and formation of compound epithelium through cutaneous thickening. Following the TUNEL (terminal deoxynucleotidyl transferase-mediated biotinylated d-uridine triphosphate nick end labeling) staining technique, the apoptotic cells were detected at the distal region of the tail skin initially, but they can be seen at the proximal region according to their following development. It has been also revealed that the number of the TUNEL-positive cells gradually increased from apical to basal direction of the epithelial layers during the tail regressing stages. Following the TEM observation, the early apoptotic cells shown in the epithelium demonstrated condensation and margination of the chromatin material at the nuclear periphery. Another epithelial apoptotic cells were shown nuclear fragmentation, membrane blebbing and cytoplasmic condensation. Following the process of the apoptotic degradation, well preserved organelles and nuclear fragments can be identified in the cytoplasm of lysosome-rich cells, however they soon reduced to lysosomal residual bodies through the progressive degradation.

• 한국신재생에너지학회:학술대회논문집
• /
• 2005.11a
• /
• pp.561-566
• /
• 2005

Polycrystalline silicon films were deposited using hot wire CVD (HWCVD). The deposition of silicon thin films was approached by the theory of charged clusters (TCC). The TCC states that thin films grow by self-assembly of charged clusters or nanoparticles that have nucleated in the gas phase during the normal thin film process. Negatively charged clusters of a few nanometer in size were captured on a transmission electron microscopy (TEM) grid and observed by TEM. The negatively charged clusters are believed to have been generated by ion-induced nucleation on negative ions, which are produced by negative surface ionization on a tungsten hot wire. The electric current on the substrate carried by the negatively charged clusters during deposition was measured to be approximately $-2{\mu}A/cm^2$. Silicon thin films were deposited at different $SiH_4$ and $H_2$ gas mixtures and filament temperatures. The crystalline volume fraction, grain size and the growth rate of the films were measured by Raman spectroscopy, X-ray diffraction and scanning electron microscopy. The deposit ion behavior of the si1icon thin films was related to properties of the charged clusters, which were in turn controlled by the process conditions. In order to verify the effect of the charged clusters on the growth behavior, three different electric biases of -200 V, 0 V and +25 V were applied to the substrate during the process, The deposition rate at an applied bias of +25 V was greater than that at 0 V and -200 V, which means that the si1icon film deposition was the result of the deposit ion of charged clusters generated in the gas phase. The working pressures had a large effect on the growth rate dependency on the bias appled to the substrate, which indicates that pressure affects the charging ratio of neutral to negatively charged clusters. These results suggest that polycrystalline silicon thin films with high crystalline volume fraction and large grain size can be produced by control1ing the behavior of the charged clusters generated in the gas phase of a normal HWCVD reactor.