• Title/Summary/Keyword: TEM Journal

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Temperature Prediction of Underground Working Place Using Artificial Neural Networks (인공신경망을 이용한 심부 갱내온도 예측)

  • Kim, Yun-Kwang;Kim, Jin
    • Tunnel and Underground Space
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    • v.17 no.4
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    • pp.301-310
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    • 2007
  • The prediction of temperature in the workings for the propriety examination for the development of a deep coal bed and the ventilation design is fairly important. It is quite demanding to obtain precise thermal conductivity of rock due to the variety and the complexity of the rock types contiguous to the coal bed. Therefore, to estimate the thermal conductivity corresponding to this geological situation and complex gallery conditions, a computing program which is TemPredict, is developed in this study. It employs Artificial Neural Network and calculates the climatic conditions in galleries. This advanced neural network is based upon the Back-Propagation Algorithm and composed of the input layers that are acceptant of the physical and geological factors of the coal bed and the hidden layers each of which has the 5 and 3 neurons. To verify TemPredict, the calculated result is compared with the measured one at the entrance of -300 ML 9X of Jang-sung production department, Jang-sung Coal Mine. The difference between the results calculated by TemPredict ($25.65^{\circ}C$) and measured ($25.7^{\circ}C$) is only $0.05^{\circ}C$, which is less than the allowable error 5%. The result has more than 95% of very high reliability. The temperature prediction for the main carriage gallery 9X in -425 ML under construction when it is completed is made. Its result is $28.2^{\circ}C$. In the future, it would contribute to the ventilation design for the mine and the underground structures.

Towards remote sensing of sediment thickness and depth to bedrock in shallow seawater using airborne TEM (항공 TEM 을 이용한 천해지역에서의 퇴적층 두께 및 기반암 심도 원격탐사에 관하여)

  • Vrbancich, Julian;Fullagar, Peter K.
    • Geophysics and Geophysical Exploration
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    • v.10 no.1
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    • pp.77-88
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    • 2007
  • Following a successful bathymetric mapping demonstration in a previous study, the potential of airborne EM for seafloor characterisation has been investigated. The sediment thickness inferred from 1D inversion of helicopter-borne time-domain electromagnetic (TEM) data has been compared with estimates based on marine seismic studies. Generally, the two estimates of sediment thickness, and hence depth to resistive bedrock, were in reasonable agreement when the seawater was ${\sim}20\;m$ deep and the sediment was less than ${\sim}40\;m$ thick. Inversion of noisy synthetic data showed that recovered models closely resemble the true models, even when the starting model is dissimilar to the true model, in keeping with the uniqueness theorem for EM soundings. The standard deviations associated with shallow seawater depths inferred from noisy synthetic data are about ${\pm}5\;%$ of depth, comparable with the errors of approximately ${\pm}1\;m$ arising during inversion of real data. The corresponding uncertainty in depth-to-bedrock estimates, based on synthetic data inversion, is of order of ${\pm}10\;%$. The mean inverted depths of both seawater and sediment inferred from noisy synthetic data are accurate to ${\sim}1\;m$, illustrating the improvement in accuracy resulting from stacking. It is concluded that a carefully calibrated airborne TEM system has potential for surveying sediment thickness and bedrock topography, and for characterising seafloor resistivity in shallow coastal waters.

A Study on characteristics of thin oxides depending on Si wafer cleaning conditions (Si기판 세정조건에 따른 산화막의 특성연구)

  • Jeon, Hyeong-Tak;Gang, Eung-Ryeol;Jo, Yun-Seong
    • Korean Journal of Materials Research
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    • v.4 no.8
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    • pp.921-926
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    • 1994
  • The characteristics of gate oxide significantly depend on the last chemical solution used in cleaning process. The standard RCA, HF-last, SC1-last, and HF-only processes are the pre-gate oxide cleaning processes utilized in this experiment. Cleaning process was followed by thermal oxidation in oxidation furnace at $900^{\circ}C$. A 100$\AA$ gate oxide was grown and characterized with using lifetime detector, VPD AAS, SIMS, TEM, and AFM. The results of HF-last and HF-only were shown to be very effective to remove the metallic impurities. And these two splits also showed long minority carrier lifetimes. The surface and interface morphologies of the oxide were examined with AFM and TEM. The rough surface morphologies were observed with the cleaning splits containing the SC1 solution. The smooth surface and interface was observed with the HF-only cleaning process.

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Effect of Chemical Vapor Deposition Condition on the Growth of SiC Thin Films (화학기상증착조건이 SiC 박막의 성장에 미치는 영향)

  • Bang, Wook;Kim, Hyeong-Joon
    • Korean Journal of Crystallography
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    • v.3 no.2
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    • pp.98-110
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    • 1992
  • B-SiC thin films were fabricated on Si(100) substrate under 1 atom by fVD. The effects of deposition conditions on the growth and the properties especially crystallinity and prefer ential alignment of these thin films were investigated. SiH4 and CH4 were used as source gases and H2 as Carrier gas. Th9 growth Of B-SiC thin films with changing parameters such as the growth temperature, the ratio of source gases (SiH4/CH4 ) and the total amount of source gases. The grown thin films were characterized by using SEM, a -step, XRD, Raman Spectro- scopy and TEM. Chemical conversion process improved the quality of thin films due to the formation of SiC buffer layer. The crystallinity of SiC thin films was improved when the growth temperature was higher than l150t and the amount of CH4 exceeded that of SiH4. The better crystallinity, the better alignment to the crystalline direction of substates. TEM analyses of the good quality thin films showed that the grain size was bigger at the surface than at the interface and the defect density is not depend on the ratio of the source gases.

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Comparative Study of Texture of Al/Ti Thin Films Deposited on Low Dielectric Polymer and SiO$_2$Substrates (저 유전상수 폴리머와 SiO$_2$기판위에 형성된 Al/Ti박막의 우선방위 비교)

  • 유세훈;김영호
    • Journal of the Microelectronics and Packaging Society
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    • v.7 no.2
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    • pp.37-42
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    • 2000
  • The comparative study of texture of Al/Ti thin films deposited on low-dielectric polymer and $SiO_2$substrates has been investigated. Fifty-nm-thick Ti films and 500-nm-thick Al-1%Si-0.5%Cu (wt%) films were deposited sequentially onto low-k polymers and $SiO_2$by using a DC magnetron sputtering system. The texture of Al thin film was determined using X-ray diffraction (XRD) theta-2theta ($\theta$-2$\theta$) and rocking curve and the microstructure of Al/Ti films on low-k polymer and $SiO_2$substrates was characterized by cross-sectional transmission electron microscopy (TEM). Both the $\theta$-2$\theta$ method and rocking curve measurement suggest that Al/Ti thin films deposited on $SiO_2$have stronger texture than those deposited on low-k polymer. The texture of Al thin films strongly depended on that of Ti films. Cross-sectional TEM revealed that grains of Ti films on $SiO_2$substrates had grown perpendicular to the substrate, while the grains of Ti alms on SiLK substrates were formed randomly. The lower degree of (111) texture of Al thin films on low-k polymer was due to Ti underlayer.

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Asbestos Exposure and Risk Assessment by ABS(Activity Based Sampling) for Former Asbestos Mining Areas in Korea (우리나라 일부 석면광산 지역에서 ABS를 이용한 석면노출 및 위해성 평가)

  • Lee, Junhyeok;Kim, Daejong;Choi, Sungwon;Kim, Hyunwook
    • Journal of Korean Society of Occupational and Environmental Hygiene
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    • v.25 no.1
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    • pp.72-81
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    • 2015
  • Objectives: The aim of this study was to investigate the exposure and risk assessment of residents near asbestos mines in Korea. Methods: To assess asbestos types and airborne concentrations, air monitoring was performed in the neighborhoods of Kwangcheon (KC) and Sinsuk (SS) mines, which were leading South Korean mines in the past. In addition, activity-based-sampling (ABS) of residents' particular activities were conducted in order to estimate the Excess Lifetime Cancer Risks (ELCRs) for the residents. Conclusions: The average concentration of airborne asbestos in KC was 0.0014 f/cc and 0.0015 f/cc by PCM and TEM, respectively. In SS it was equal at 0.0012 f/cc by PCM and TEM. No statistically significant difference was found in the average concentration of airborne asbestos between the two mines. The average asbestos concentration of ABS was 0.0048 f/cc (PCM) and 0.0042 f/cc (TEM) in KC, while it was 0.0137 f/cc (PCM) and 0.0125 f/cc (TEM) in SS. It was found that the average asbestos concentration of ABS in SS was statistically significantly higher than that of KC (p<0.01). The results of ELCRs by scenario in KC showed that the scenarios of bicycle, car, weed control, weed whacking, child playing in the dirt, and physical training fell within $1{\times}0^{-6}-1{\times}10^{-4}$, which is the acceptable range of ELCR. The scenarios of motorcycle, walker, digging, and field sweeping, however, exceeded the acceptable range. In SS, only the scenario of car fell within the acceptable range, while all of the other scenarios exceeded the acceptable range.

TEM and Raman Spectrum Characterization of 3C-SiC/Si(001) Heterostructure Grown by Chemical Vapor Deposition (화학증착 방법으로 Si(001)기판 상에 성장된 3C-SiC 이종접합 박막의 투과전자현미경 및 라만 특성분석)

  • Kim, Dong-Geun;Lee, Byeong-Taek;Mun, Chan-Gi;Kim, Jae-Geun;Jang, Seong-Ju
    • Korean Journal of Materials Research
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    • v.7 no.8
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    • pp.654-659
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    • 1997
  • HMDS[Si$_{2}$(CH$_{3}$)$_{6}$]단일 선구체를 이용하여 화학증착 방법으로 성장된 3C-SiC/Si(001) 이종접합박막의 특성을 XRD, 라만 스펙트럼 및 투과전자현미경(TEM)등을 이용하여 조사하였으며 시판되고 있는 상용 3C-SiC/Si 시편을 같은 방법으로 분석하여 특성을 비교검토하였다. $C_{3}$H$_{8}$-SiH$_{4}$-H$_{2}$혼합가스를 선구체로 이용하여 5$\mu\textrm{m}$두께로 성장된 상용 3C-SiC/Si 이종접합박막 시료의 XRD스펙트럼에서는 강한 3C-SiC(002)피크 만이 관찰되었으며, 라만 스펙트럼의 LO피크는 970nm$^{-1}$ 정도에서 강하게 나타났다. TEM 관찰 결과 다수의 전위, 쌍정, 적층결함 및 APB와 같은 결정결함들이 3C-SiC/Si 계면 근처에 집중적으로 분포되어 있었으며 성장된 박막은 단결정임을 확인할 수 있었다. 선구체로 HMDS를 사용하여 0.3$\mu\textrm{m}$ 및 2$\mu\textrm{m}$ 두께로 성장시킨 3C-SiC/Si 박막 시료의 XRD 스펙트럼은 다소 완만한 3C-SiC(002) 피크와 함께 3C-SiC(111)피크가 관찰되었으며, TEM으로 확인한 결과 소경각 결정립들이 약 5˚-10˚ 정도 방위차를 가지고 성장하여 기둥구조(columnar structure)를 이루고 있기 때문임을 알 수 있었다. 라만 스펙트럼 분석 결과 박막의 LO 피크가 967-969nm$^{-1}$정도로 다소 낮은 wavenumber쪽으로 이동되어 박막 내에 상당한 응력이 존재함을 확인할 수 있었다. 이와 같은 HMDS 3C-SiC박막의 특성은 성장 온도가 낮고 박막 성장용 가스로 사용한 HMDS 선구체에서 탄소가 과잉으로 공급되기 때문으로 제안되었다.다.

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Deposition of AIN Thin Films by Single Ion Beam Sputtering (단일 이온빔 스퍼터링법을 이용한 AIN 박막의 증착)

  • 이재빈;주한용;이용의;김형준
    • Journal of the Korean Ceramic Society
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    • v.34 no.2
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    • pp.209-215
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    • 1997
  • Aluminum nitride(AIN) thin films were deposited by reactive single ion beam sputtering using N2 or NH3 as reactive gas. The structural, compositional and optical properties of AIN thin films were characterized by XRD, GAXRD, TEM, SEM, XPS UV/VIS spectrophotometer, and FT-IR. All the deposited AIN thin films were amorphous by the analysis fo XRD and GAXRD. However, TEM analysis showed that AIN nano-crystallites were uniformly distributed in the films. The presence of Al-N bonds were also confirmed by FT-IR and XPS analyses. The optical bandgap of AIN films increased up to 6.2 eV and the transmittance was a-bout 100% in visible range with approaching the stoichimetric composition. Irrespective of using N2 or NH3 as reactive gas, the deposited AIN thin films had very smooth surface morphologies. Their refractive index ranged from 1.6 to 1.7.

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BS/channeling studies on the epitaxially grown Pt(111) films on $Al_2O_3$(0001) (BS/Channeling을 이용한 Pt(111)/$Al_2O_3$(0001) 적층 생장 연구)

  • 이종철;김신철;김효배;정광호;김긍호;최원국;송종환
    • Journal of the Korean Vacuum Society
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    • v.7 no.4
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    • pp.300-305
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    • 1998
  • Crystallinity and structual properties of the epitaxially grown Pt films on $Al_2O_3$(0001) substrate by rf magnetron sputtering at a substrate temperature of $600^{\circ}C$ were studied by using backscattering spectrometry (BS)/channeling and transmission electron microscopy (TEM) measurements. $MeV^4$He ion BS/channeling results showed that the channeling minimum yield of Pt film with a thickness of 3500$\AA$ was 4%. This indicates an excellent crystallinity of Pt film. When the thickness of Pt film was less than 200 $\AA$, the channeling minimum yield of Pt film increased sharply with the decrease in film thickness. The Pt layer on $Al_2O_3$(0001) substrate grew epitaxially to the direction of (111) with six-fold symmetry. Cross-sectional TEM images also showed that Pt film on $Al_2O_3$(0001) substrate consist of twinned domains to release the strain induced by the lattice mismatch and the surface roughness of the film increased at the twin boundaries where the strain was contcentrated.

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TEM Analysis of Interfaces between Cr Film Sputtered with RE Bias and Photosensitive Polyimide (RE 바이어스 스퍼터링한 Cr 박막과 감광성 폴리이미드 사이의 계면 TEM 분석)

  • 조성수;김영호
    • Journal of the Microelectronics and Packaging Society
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    • v.10 no.2
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    • pp.39-47
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    • 2003
  • Cr thin films were deposited on photosensitive polyimide substrates by RF bias sputtering and DC sputtering and the interfaces between Cr thin film and polyimide were observed using TEM. When the polyimide surface was in-situ RF plasma cleaned at the RF power density of 0.13-2.12 $W/cm^2$, increasing of RF power density changed the morphology of polyimide surfaces from round dig to sharp shape, and surface roughness increased by anisotropic etching. The intermixed layer-like interfaces between Cr and polyimide were observed in the RF bias sputtered specimens. This interface seems to be formed due to the RF cleaning effect; the polyimide surface was RF plasma cleaned while RF power was increased to the setting point before Cr deposition.

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