• 한국환경농학회지
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• 제17권4호
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• pp.335-340
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• 1998

This study was conducted to determine the morphological responses of barley seedlings to NaCl stress and to investigate histological changes of cells with transmission electron microscope(TEM) after NaCl stress. Plant height and root length of 10-day old barley seedlings with NaCl stress were reduced and inhibition level was found to be more severe in the plant height than in the root length. The leaf length, leaf width and leaf area were shorter as well with NaCl stress than without NaCl stress. However, there was no difference in the number of roots between NaCl treatments. The weight of dry matter decreased at higher NaCl concentrations, especially at 100mM NaCl. The water content of shoots tend to decrease at higher NaCl concentrations, but there was no difference in the water content of roots, The reduced sugar content was greatly increase than starch. Cellulose content was higher in NaCl stressed-plant than control, and tended to decreased at higher NaCl concentrations. Lignin content also decreased NaCl stressed-plant but there was no tendency at NaCl stress concentrations. Electric conductivity of cell sap with seedlings was high with NaCl stressed-plant. Amount of cell sap gradually increased with time in the roots than in the shoots, The grana of chloroplasts was changed by 150mM NaCl concentration. The christe of mitochondria in root meristematic sells ruined in structure and cell wall of leaf and root was also ruined by NaCl stress.

• 한국분말재료학회지
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• 제9권5호
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• pp.359-364
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• 2002

We report the structure, thermal and magnetic properties of a non-equilibrium $Al_{0.6}(Fe_{50}Cu_{50})_{0.4}$ alloy powder produced by rod milling and chemical leaching. An X-ray diffractometry(XRD), a transmission electron microscope(TEM), a differential scanning calorimeter(DSC), a vibrating sample magnetometer(VSM), and superconducting quantum interference device(SQUID) were utilized to characterize the as-milled and leaching specimens. The crystallite size reached a value of about 8.82 nm. In the DSC experiment, the peak temperatures and crystallization temperatures decreased with increasing milling time. The activation energy of crystallization is 200.5 kJ/mole for as-milled alloy powder. The intensities of the XRD peaks of as-milled powders associated with the bcc type $Al_{0.5}Fe_{0.5}$ structure formative at $350^{\circ}C$ sharply increase with increasing annealing temperature. Above $400^{\circ}C$, peaks alloted to $Al_{0.5}Fe_{0.5}$ and $Al_{5}Fe_{2}$ are observed. After annealing at $600^{\circ}C$ for 1h, the leached Ll specimen transformed into bcc $\alpha$-Fe and fcc Cu phases, accompanied by a change in the structural and magnetic properties. The saturation magnetization decreased with increasing milling time, and a value of about 8.42 emu/g was reached at 500 h of milling. The coercivity reached a maximum value of about 142.7 Oe after 500 h of milling. The magnetization of leached specimens as function of fields were higher at 5 K, and increased more sharply at 5 K than at 100 K.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.41.2-41.2
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• 2011

Recently, scaling down of ULSI (Ultra Large Scale Integration) circuit of CMOS (Complementary Metal Oxide Semiconductor) based electronic devices become much faster speed and smaller size than ever before. However, very narrow interconnect line width causes some drawbacks. For example, deposition of conformal and thin barrier is not easy moreover metallization process needs deposition of diffusion barrier and glue layer. Therefore, there is not enough space for copper filling process. In order to overcome these negative effects, simple process of copper metallization is required. In this research, Cu-V thin alloy film was formed by using RF magnetron sputter deposition system. Cu-V alloy film was deposited on the plane $SiO_2$/Si bi-layer substrate with smooth and uniform surface. Cu-V film thickness was about 50 nm. Cu-V layer was deposited at RT, 100, 150, 200, and $250^{\circ}C$. XRD, AFM, Hall measurement system, and XPS were used to analyze Cu-V thin film. For the barrier formation, Cu-V film was annealed at 200, 300, 400, 500, and $600^{\circ}C$ (1 hour). As a result, V-based thin interlayer between Cu-V film and $SiO_2$ dielectric layer was formed by itself with annealing. Thin interlayer was confirmed by TEM (Transmission Electron Microscope) analysis. Barrier thermal stability was tested with I-V (for measuring leakage current) and XRD analysis after 300, 400, 500, 600, and $700^{\circ}C$ (12 hour) annealing. With this research, over $500^{\circ}C$ annealed barrier has large leakage current. However V-based diffusion barrier annealed at $400^{\circ}C$ has good thermal stability. Thus, thermal stability of vanadium-based thin interlayer as diffusion barrier is good for copper interconnection.

• 폴리머
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• 제38권4호
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• pp.544-549
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• 2014

이중층 필름 구조로서 상부에 폴리실록산 층과 하부에 폴리이미드 층을 갖는 내열 점착 필름을 제조하였다. 이중층 필름제조 과정에서 폴리실록산이 용해된 tetrahydrofuran(THF) 용액이 폴리이미드 층 상부에 도포된 이후, 상온~$80^{\circ}C$ 온도범위에서 에이징(aging) 과정을 거쳐 두 층 사이에서 나노 상분리에 의한 도메인이 500 nm 두께의 중간층으로 형성되었고 이에 대한 모폴로지는 투과전자현미경을 통해 조사되었다. 이러한 중간층 형성을 통해 상부 폴리실록산은 균일하고 안정적 층을 형성함으로 재현성 있는 점착특성을 나타내었으며, $300^{\circ}C$ 처리에서도 8-13 g/inch의 점착성질을 나타내었다. 또한 이중층 폴리이미드/폴리실록산과 나노 도메인 중간층 구조를 갖는 필름은 안정된 단일 박막으로 얻어지며 $435^{\circ}C$의 높은 열분해 온도를 가지고, $300^{\circ}C$에서 점착특성이 유지되는 결과를 보여 마이크로일렉트로닉스의 공정 조건에 적합한 활용 가능성을 보였다.

• 대한기계학회논문집B
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• 제25권9호
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• pp.1175-1182
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• 2001

Chemical compositions of polydisperse SiO$_2$/TiO$_2$multicomponent aggregates were measured for different heights from the burner surface and different mobility diameters of aggregates. SiO$_2$/TiO$_2$multicomponent particles were generated in a hydrogen/oxygen coflow diffusion flame from two sets of precursors: TTIP(titanium tetraisopropoxide), TEOS(tetraethylorthosilicate). To maintain 1:1 mole ratio of TTIP:TEOS vapor, flow rate of carrier gas $N_2$was fixed at 0.6lpm for TTIP, at 0.1lpm for TEOS. In-situ sampling probe was used to supply particles into DMA(differential mobility analyzer) which was calibrated with using commercial DMA(TSI, model 3071A) and classifying monodisperse multicomponent particles. Classified monodisperse particles were collected with electrophoretic collector. The distributions of composition from particles to particle were determined using EDS(energy dispersive spectrometry) coupled with TEM(transmission electron microscope). The chemical(atomic) compositions of classified monodisperse particle were obtained for different heights; z=40mm, 60mm, 80mm. The results suggested that the chemical(atomic) composition of SiO$_2$decreased with the height from burner surface and the composition of SiO$_2$and TiO$_2$approached to the value of 1 to 1 fat downstream. It is also found that the composition of SiO$_2$decreases as the mobility diameter of aggregate increases.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2000년도 춘계학술대회논문집B
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• pp.441-446
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• 2000

Chemical compositions of monodisperse $SiO_2/TiO_2$ multicomponent aggregates were measured for different heights from the burner surface and different mobility diameters of aggregates. $SiO_2/TiO_2$ multicomponent particles were generated in a hydrogen/oxygen coflow diffusion flame from two sets of precursors: TTIP (titanium tetraisopropoxide), TEOS(tetraethylorthosilicate). To maintain 1:1 mole ratio of TTIP:TEOS vapor theoretically, flow rate of carrier gas $N_2$ was fixed at 0.61pm for TTIP, at 0.11pm for TEOS. In situ sampling probe was used to supply particles into differential mobility analyzer(DMA) which was calibrated with using commercial DMA(TSI 3071A) and classifying monodisperse multicomponent particles. Classified particles were collected with electrophoretic collector. The distributions of composition from particle to particle were determined using EDS (energy dispersive spectrometry) coupled with TEM (transmission electron microscope). The chemical (atomic) compositions of classified monodisperse particle were obtained for different heights; z=40mm, 60mm, 80mm. The results suggested that the atomic composition of $SiO_2$ decreased with the height from burner surface and the composition of $SiO_2$ and $TiO_2$ approached to the value of 1 to 1 in far downstream. It is also found that the composition of $SiO_2$ decreases as the mobility diameter of aggregate increases.

• 한국재료학회지
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• 제11권10호
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• pp.900-906
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• 2001

We prepared tunnel magnetoresistance(TMR) devices of Ta($50\AA$)/NiFe($50\AA$)/IrMn(150$\AA$)/CoFe($50\AA$)/Al ($13\AA$)-O/CoFe($40\AA$)/NiFe($400\AA$)/Ta(50$\AA$) structure which has 100$\times$100 $\mu\textrm{m}^2$ junction area on $2.5\Times2.5 cm^{2}$ $Si/SiO_2$ ($1000\AA$) substrates by a inductively coupled plasma(ICP) magnetron sputter. We fabricated the insulating layer using a ICP plasma oxidation method by varying oxidation time from 80 sec to 360 sec, and measured resistances and magnetoresistance(MR) ratios of TMR devices. We used a high resolution transmission electron microscope(HRTEM) to investigate microstructural evolution of insulating layer. The average resistance of devices increased from 16.38 $\Omega$ to 1018 $\Omega$ while MR ratio decreased from 30.31 %(25.18 %) to 15.01 %(14.97 %) as oxidation time increased from 80 sec to 360 sec. The values in brackets are calculated values considering geometry effect. By comparing cross-sectional TEM images of 220 sec and 360 sec-oxidation time, we found that insulating layer of 360 sec-oxidized was 30 % and 40% greater than that of 150 sec-oxidized in thickness and thickness variation, respectively. Therefore, we assumed that increase of thickness variation with oxidation time is major reason of MR decrease. The resistance of 80 sec-oxidized specimen was 160 k$\Omega$$\mu\textrm{m}^2$ which is appropriate for industrial needs of magnetic random access memory(MRAM) application.

• 한국전기전자재료학회논문지
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• 제17권9호
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• pp.916-923
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• 2004

In this paper, the strained Si$_{0.9}$Ge$_{0.1}$ epitaxial layers grown by a reduced pressure chemical vapor deposition (RPCVD) on Si (100) were characterized by Rutherford backscattering spectrometery (RBS) for the fabrication of an SiGe heterojunction bipolar transistor(HBT). RBS spectra of the ${Si}_0.9{Ge}_0.1$epitaxial layers grown on the Si substrates which were implanted with the phosphorus (P) ion and annealed at a temperature between $850^{\circ}C$ - $1000^{\circ}C$ for 30min were analyzed to investigate the post thermal annealing effect on the grown${Si}_0.9{Ge}_0.1$epitaxial layer quality. Although a damage of the substrates by P ion-implantation might be cause of the increase of RBS yield ratios, but any defects such as dislocation or stacking fault in the grown ${Si}_0.9{Ge}_0.1$ epitaxial layer were not found in transmission electron microscope (TEM) photographs. The post high temperature rapid thermal annealing (RTA) effects on the crystalline quality of the ${Si}_0.9{Ge}_0.1$ epitaxial layers were also analyzed by RBS. The changes in the RBS yield ratios were negligible for RTA a temperature between $900^{\circ}C$ - $1000^{\circ}C$for 20 sec, or $950^{\circ}C$for 20 sec - 60 sec. A SiGe HBT array shows a good Gummel characteristics with post RTA at $950^{\circ}C$ for 20 sec.sec.sec.

• 환경생물
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• 제38권1호
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• pp.61-70
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• 2020

A eukaryotic microalga was isolated from seawater in Janghang Harbor, Korea and its morphological, molecular, and physiological characteristics were investigated. Due to its simple morphology, no distinctive characters were found by morphological observation, such as light microscope or scanning/transmission electron microscopy (S/TEM). However, molecular phylogenetic evidence inferred from the concatenated small subunit (SSU) 18S rRNA and internal transcribed spacer (ITS) sequence data indicated that the isolate belonged to the newly described Micractinium singularis. Furthermore, it was clustered with Antarctic Micractinium strains and it also showed a psychrotolerant property, surviving at temperatures as low as 5℃. However, its optimal growth temperatures range from 15℃ to 25℃, indicating that this microalga is a mesophile. Additionally, gas chromatography-mass spectrometry (GC/MS) analysis showed that the isolate was rich in nutritionally important omega-3 polyunsaturated fatty acid, and high-performance liquid chromatography analysis (HPLC) revealed that the high-value antioxidant lutein was biosynthesized as an accessory pigment by this microalga, with glucose as the major monosaccharide. Therefore, in this study, a Korean marine M. singularis species was discovered, characterized, and described. It was subsequently added to the national culture collections.

• 한국분말재료학회지
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• 제22권6호
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• pp.385-390
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• 2015

We report a synthesis of non-toxic InP nanocrystals using non-pyrolytic precursors instead of pyrolytic and unstable tris(trimethylsilyl)phosphine, a popular precursor for synthesis of InP nanocrystals. In this study, InP nanocrystals are successfully synthesized using hexaethyl phosphorous triamide (HPT) and the synthesized InP nanocrystals showed a broad and weak photoluminescence (PL) spectrum. As synthesized InP nanocrystals are subjected to further surface modification process to enhance their stability and photoluminescence. Surface modification of InP nanocrystals is done at $230^{\circ}C$ using 1-dodecanethiol, zinc acetate and fatty acid as sources of ZnS shell. After surface modification, the synthesized InP/ZnS nanocrystals show intense PL spectra centered at the emission wavelength 612 nm through 633 nm. The synthesized InP/ZnS core/shell structure is confirmed with X-ray diffraction (XRD) and Inductively Coupled Plasma - Atomic Emission Spectrometer (ICP-AES). After surface modification, InP/ZnS nanocrystals having narrow particle size distribution are observed by Field Emission Transmission Electron Microscope (FE-TEM). In contrast to uncapped InP nanocrystals, InP/ZnS nanocrystals treated with a newly developed surface modified procedure show highly enhanced PL spectra with quantum yield of 47%.