• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.39-43
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• 1998

Single crystals of{{{{ { Zn}_{ 1-x} {Mn }_{x }{Te} }}}} with x=0.3-0.6 were prepared by the standard Bridgeman method. Diffuse neutron diffraction intensities due to the short range magnetic ordering is found in the vicinities of 1 1/2 0 reciprocal point and its equivalent point, indicating that the magnetic correlation of the clusters is the type III antiferromangetic one do the F-type Bravais class crystals, being identical with that of {{{{{ Cd}_{ 1-x} {Mn }_{x }Te }}}}. Neutron inelastic scattering measure-ment has been performed for {{{{{ Zn}_{ 0.6} { Mn}_{ 0.4}Te }}}} sample using the cold neutron spectrometer. AGNES. High resolution measurement with the energy resolution of {{{{ TRIANGLE E= +- .01meV}}}} was carried out in the temperature range from 10K to the ambient. Critical scattering, closely related with the spin glass transition, has been observed for the first time in this semimagnetic semi-conductor. The critical scattering is observed at temperatures in the vicinity of the spin glass transition temperature, 17K. The scattering is observed as a kind of quasielastic scattering in the reciprocal range where the elastic magnetic diffuse scattering has been observed, e.g., 11/20 reciprocal point, indicating the spin fluctuation has dynamic components in this material. Photoconductivity has been discovered below 150K in {{{{{ Zn}_{ 0.4} {Mn }_{0.6 } Te}}}}. The electric AC conductivity has been increased dramatically under the laser light with the wave lengths of {{{{ lambda =6328,5145 and4880 }}}}$\AA$ ,respectively. After the light was darkened, the conductivity was reduced to the original level after about 2000 seconds at 50K, being above the spin glass transition temperature. This phenomenon is the typical persistent photoconductivity; PPC which was similarly found in {{{{ { Zn}_{ 1-x} { Mn}_{x} Te}}}}.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.42 no.4
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• pp.322-328
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• 2009

Three-hundred and sixteen Escherichia coli strains from seawater, and a variety of farmed fishes, including oliver flounder (Paralichthys olivaceus), black rock fish (Sebastes schlegeli), red sea bream (Pagrus major) and sea bass (Lateolabrax japonicus) between May to October in 2004, were tested by agar dilution method to determine their susceptibility patterns to 17 antimicrobial agents. Overall, 92.1% of Escherichia coli isolates from samples showed antimicrobial resistance to at least one antimicrobial agent and the multiple resistance was seen in 173 isolates (54.7%). The resistance of E. coli isolates to tetracycline (74.1%) was highest, followed by cephalothin (69.9%), doxycycline (66.5%), streptomycin (47.2%), ampicillin (46.2%), cefazolin (31.6%), enrofloxacin (31.0%). norfloxacin (28.2%). The most frequent resistance pattern was TE-D-CF-CIP-ENO-NOR-AM-S-C-SXT-AmC-CZ (14.7%), followed by CF (6.2%), TE (5.1%), TE-CF (4.5%) in 177 isolates from fishes and TE-D-CF (7.2%) followed by TE-D-CF-S (5.8%), CF and TE-D-S (3.6%) in 139 isolates from seawater.

• Journal of the Korean Vacuum Society
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• v.6 no.1
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• pp.69-76
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• 1997

P-type ($Bi_{0.5}Sb_{1.5}Te_3$) and n-type ($Bi_2Te_{2.4} Se_{0.6}$) thermoelectric thin film were deposited on glass and Teflon substrates by the flash evaporation technique. The changes in thermoelectric properties, such as Seebeck coefficient, electrical conductivity, carrier concentration, carrier mobility, thermal conductivity, and figure of merit, were investigated as a function of film thickness and annealing condition. Figures of merit of the thin films annealed at 473 K for 1 hour were improved to be $1.3{\times}10^{-3}K^{-1}$ for p-type and $0.3{\times}10^{-3}K^{-1}$ for n-type, and they were almost independent of film thickness. Temperature sensors were fabricated from the thin films having the above mentioned properties. And thermo-emf, sensitivity, and time constant of the sensors were measured to evaluate their characteristics for temperature sensors. Thin film sensors deposited on Teflon substrates showed better performance than those on glass substrates, and their sensitivity and time constant were 2.91 V/W and 28.2 sec respectively for the sensor of leg width 1 mm$\times$length 16 mm.

• Korean Journal of Materials Research
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• v.22 no.6
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• pp.280-284
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• 2012

Bismuth antimony telluride (BiSbTe) thermoelectric materials were successfully prepared by a spark plasma sintering process. Crystalline BiSbTe ingots were crushed into small pieces and then attrition milled into fine powders of about 300 nm ~ 2${\mu}m$ size under argon gas. Spark plasma sintering was applied on the BiSbTe powders at 240, 320, and $380^{\circ}C$, respectively, under a pressure of 40 MPa in vacuum. The heating rate was $50^{\circ}C$/min and the holding time at the sintering temperature was 10 min. At all sintering temperatures, high density bulk BiSbTe was successfully obtained. The XRD patterns verify that all samples were well matched with the $Bi_{0.5}Sb_{1.5}Te_{3}$. Seebeck coefficient (S), electric conductivity (${\sigma}$) and thermal conductivity (k) were evaluated in a temperature range of $25{\sim}300^{\circ}C$. The thermoelectric properties of BiSbTe were evaluated by the thermoelectric figure of merit, ZT (ZT = $S^2{\sigma}T$/k). The grain size and electric conductivity of sintered BiSbTe increased as the sintering temperature increased but the thermal conductivity was similar at all sintering temperatures. Grain growth reduced the carrier concentration, because grain growth reduced the grain boundaries, which serve as acceptors. Meanwhile, the carrier mobility was greatly increased and the electric conductivity was also improved. Consequentially, the grains grew with increasing sintering temperature and the figure of merit was improved.

• Korean Chemical Engineering Research
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• v.53 no.6
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• pp.798-801
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• 2015

Nanomaterials (NMs) based on cadmium telluride (CdTe) are the theme of numerous research areas due to their unique chemical and physical properties. NM synthesis via a size-controlled procedure has become an intriguing research topic because NMs exhibit novel optical and physical properties depending on their size and shape. In this study, we prepared CdTe nanowires (NWs) via self-assembly from individual Nanoparticles (NPs). Thioglycolic acid (TGA)-to-Cd ion ratio of 1.3 was used instead of the traditional value of 2.4 and the reduced amount of stabilizer resulted in reorganization from individual NPs into NWs consisting of multi-layers of individual NPs. Transmission electron microscopy (TEM) and scanning electron microscopy (SEM) were performed to characterize NWs. The produced nanowires were straight and long in shape and their length ranged from 500 nm to tens of micrometers.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.6
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• pp.297-301
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• 2006

In the present work, we investigate the characteristics of new composition material, chalcogenide $Ge_1Se_1Te_2$ material in order to overcome the problems of conventional PRAM devices. The Tc of $Ge_1Se_1Te_2$ bulk was measured $231.503^{\circ}C$ with DSC analysis. For static DC test mode, at low voltage, two different resistances are observed. depending on the crystalline state of the phase-change resistor. In the first sweep, the as-deposited amorphous $Ge_1Se_1Te_2$ showed very high resistance. However when it reached the threshold voltage(about 11.8 V), the electrical resistance of device was drastically reduced through the formation of an electrically conducting path. The phase transition between the low conductive amorphous state and the high conductive crystal]me state was caused by the set and reset pulses respectively which fed through electrical signal. Set pulse has 4.3 V. 200 ns. then sample resistance is $80\sim100{\Omega}$. Reset pulse has 8.6 V 80 ns, then the sample resistance is $50{\sim}100K{\Omega}$. For such high resistance ratio of $R_{reset}/R_{set}$, we can expect high sensing margin reading the recorded data. We have confirmed that phase change properties of $Ge_1Se_1Te_2$ materials are closely related with the structure through the experiment of self-heating layers.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.443-447
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• 2009

Bismuth-antimony-telluride based thermoelectric thin film materials were prepared by metal organic vapor phase deposition using trimethylbismuth, triethylantimony and diisopropyltelluride as metal organic sources. A planar type thermoelectric device has been fabricated using p-type $Bi_{0.4}Sb_{1.6}Te_3$ and n-type $Bi_{2}Te_{3}$ thin films. Firstly, the p-type thermoelectric element was patterned after growth of $5{\mu}m$ thickness of $Bi_{0.4}Sb_{1.6}Te_3$ layer. Again n-type $Bi_{2}Te_{3}$ film was grown onto the patterned p-type thermoelectric film and n-type strips are formed by using selective chemical etchant for $Bi_{2}Te_{3}$. The top electrical connector was formed by thermally deposited metal film. The generator consists of 20 pairs of p- and n-type legs. We demonstrate complex structures of different conduction types of thermoelectric element on same substrate by two separate runs of MOCVD with etch-stop layer and selective etchant for n-type thermoelectric material. Device performance was evaluated on a number of thermoelectric devices. To demonstrate power generation, one side of the device was heated by heating block and the voltage output was measured. The highest estimated power of 1.3 ${\mu}m$ is obtained at the temperature difference of 45 K.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.23 no.6
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• pp.41-46
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• 2023

Design of W-band TE10 to TEM mode converter for radial power combiner is proposed in this paper. The proposed structure is used with generally available pin to realize TEM mode and is designed to convert TE10 to TEM mode gradually using 2-step impedance transformer and back short. The pin of proposed mode converter is well bonded to the housing so that environment conditions such as vibration or shock are not affected. The proposed mode converter, in a back-to-back configuration, has less than 1.55 dB insertion loss and more than 10 dB return loss from 92.5 GHz to 97.7 GHz. Proposed converter is expected compact radar and various applications requiring for high power and stable environment conditions.

• 전기의세계
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• v.20 no.2
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• pp.9-14
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• 1971

N type single crystal CdTe is grown by doping Gallium as 0.01 percent, by using zone melting method. And also p type CdTe is grown by doping Ag, Sb, and Te as 0.01%. Resistivity and Concentration of the n.p type single crystal are measured. And then Li ions are implanted on the n type CdTe by high voltage accellerator with different amount of impurity. Indium is evaporated on the p type in high vacuum condition. These sample are heated so as to make P-N Junction in Argon gas flow. Electrical properties for solar cell are investigated. Photovoltage and current are found to be varyed according to following factor: 1) amount of impurity 2) diffusion thickness 3) temperature and time for making P-N junction. Efficiency of the P-N Junction evaporated Indium is 6.5 when it is heated at 380.deg. C for 15 minutie.

• Journal of Korea Society of Industrial Information Systems
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• v.8 no.2
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• pp.1-6
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• 2003

A theoretical method for the TE polarized electromagnetic scattering on a periodic strip grating over a grounded dielectric slab is considered. The numerical results for an analysis of the plane wave scattering from the structure are presented such as normalized mode amplitude and relative reflected power against normalized dielectric slab height, relative reflected power against angle of incidence and distribution of strip current density. Detailed discussions on the Bragg blazing phenomena observed in the geometry are give.