• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1998년도 PROCEEDINGS OF THE 14TH KACG TECHNICAL MEETING AND THE 5TH KOREA-JAPAN EMGS (ELECTRONIC MATERIALS GROWTH SYMPOSIUM)
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• pp.39-43
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• 1998

Single crystals of{{{{ { Zn}_{ 1-x} {Mn }_{x }{Te} }}}} with x=0.3-0.6 were prepared by the standard Bridgeman method. Diffuse neutron diffraction intensities due to the short range magnetic ordering is found in the vicinities of 1 1/2 0 reciprocal point and its equivalent point, indicating that the magnetic correlation of the clusters is the type III antiferromangetic one do the F-type Bravais class crystals, being identical with that of {{{{{ Cd}_{ 1-x} {Mn }_{x }Te }}}}. Neutron inelastic scattering measure-ment has been performed for {{{{{ Zn}_{ 0.6} { Mn}_{ 0.4}Te }}}} sample using the cold neutron spectrometer. AGNES. High resolution measurement with the energy resolution of {{{{ TRIANGLE E= +- .01meV}}}} was carried out in the temperature range from 10K to the ambient. Critical scattering, closely related with the spin glass transition, has been observed for the first time in this semimagnetic semi-conductor. The critical scattering is observed at temperatures in the vicinity of the spin glass transition temperature, 17K. The scattering is observed as a kind of quasielastic scattering in the reciprocal range where the elastic magnetic diffuse scattering has been observed, e.g., 11/20 reciprocal point, indicating the spin fluctuation has dynamic components in this material. Photoconductivity has been discovered below 150K in {{{{{ Zn}_{ 0.4} {Mn }_{0.6 } Te}}}}. The electric AC conductivity has been increased dramatically under the laser light with the wave lengths of {{{{ lambda =6328,5145 and4880 }}}}$\AA$ ,respectively. After the light was darkened, the conductivity was reduced to the original level after about 2000 seconds at 50K, being above the spin glass transition temperature. This phenomenon is the typical persistent photoconductivity; PPC which was similarly found in {{{{ { Zn}_{ 1-x} { Mn}_{x} Te}}}}.

• 한국수산과학회지
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• 제42권4호
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• pp.322-328
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• 2009

Three-hundred and sixteen Escherichia coli strains from seawater, and a variety of farmed fishes, including oliver flounder (Paralichthys olivaceus), black rock fish (Sebastes schlegeli), red sea bream (Pagrus major) and sea bass (Lateolabrax japonicus) between May to October in 2004, were tested by agar dilution method to determine their susceptibility patterns to 17 antimicrobial agents. Overall, 92.1% of Escherichia coli isolates from samples showed antimicrobial resistance to at least one antimicrobial agent and the multiple resistance was seen in 173 isolates (54.7%). The resistance of E. coli isolates to tetracycline (74.1%) was highest, followed by cephalothin (69.9%), doxycycline (66.5%), streptomycin (47.2%), ampicillin (46.2%), cefazolin (31.6%), enrofloxacin (31.0%). norfloxacin (28.2%). The most frequent resistance pattern was TE-D-CF-CIP-ENO-NOR-AM-S-C-SXT-AmC-CZ (14.7%), followed by CF (6.2%), TE (5.1%), TE-CF (4.5%) in 177 isolates from fishes and TE-D-CF (7.2%) followed by TE-D-CF-S (5.8%), CF and TE-D-S (3.6%) in 139 isolates from seawater.

• 한국진공학회지
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• 제6권1호
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• pp.69-76
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• 1997

순간 증착법으로 $Bi_{0.5}Sb_{1.5}Te_3$(p형)와 $Bi_2Te_{2.4} Se_{0.6}$(n형) 박막을 제조하여 두께와 어닐 링 조건에 따른 Seebeck 계수, 전기전도도, carrier 농도 및 이동도, 열전도도, 성능지수의 변화 등 열-전기적 특성을 조사하였다. 473K에서, 1시간 진공 열처리한 결과 p형과 n형의 성능지구는 각각 $1.3{\times}10^{-3}K^{-1}$ 및 $0.3{\times}10^{-3}K^{-1}$으로 향상되었으며 두께에 크게 의존하지 않았 다. 이런 성질을 갖는 열전 박막을 소자화한 박막 온도 센서를 유리와 Teflon기판 위에 제 조하였으며, 이들의 온도 변화에 대한 열기전력, 민감도 및 시간 상수 등 센서 특성을 측정 하였다. p 및 n형의 leg 폭 1mm$\times$길이 16mm인 박막 온도 센서의 경우, Teflon 기판일 때 좋은 성능을 나타내었으며, 민감도는 2.91V/W, 시간 상수는 28.2초이었다.

• 한국재료학회지
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• 제22권6호
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• pp.280-284
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• 2012

Bismuth antimony telluride (BiSbTe) thermoelectric materials were successfully prepared by a spark plasma sintering process. Crystalline BiSbTe ingots were crushed into small pieces and then attrition milled into fine powders of about 300 nm ~ 2${\mu}m$ size under argon gas. Spark plasma sintering was applied on the BiSbTe powders at 240, 320, and $380^{\circ}C$, respectively, under a pressure of 40 MPa in vacuum. The heating rate was $50^{\circ}C$/min and the holding time at the sintering temperature was 10 min. At all sintering temperatures, high density bulk BiSbTe was successfully obtained. The XRD patterns verify that all samples were well matched with the $Bi_{0.5}Sb_{1.5}Te_{3}$. Seebeck coefficient (S), electric conductivity (${\sigma}$) and thermal conductivity (k) were evaluated in a temperature range of $25{\sim}300^{\circ}C$. The thermoelectric properties of BiSbTe were evaluated by the thermoelectric figure of merit, ZT (ZT = $S^2{\sigma}T$/k). The grain size and electric conductivity of sintered BiSbTe increased as the sintering temperature increased but the thermal conductivity was similar at all sintering temperatures. Grain growth reduced the carrier concentration, because grain growth reduced the grain boundaries, which serve as acceptors. Meanwhile, the carrier mobility was greatly increased and the electric conductivity was also improved. Consequentially, the grains grew with increasing sintering temperature and the figure of merit was improved.

• Korean Chemical Engineering Research
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• 제53권6호
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• pp.798-801
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• 2015

Cadmium telluride(CdTe) 나노입자의 자기조립으로 형성된 나노구조체는 독특한 특성 때문에 여러 분야에서 활발히 연구되고 있다. 나노구조체의 광학적, 물리적 특성은 물질 형태에 크게 의존하기 때문에 나노구조를 제어하는 기술은 나노과학 분야에서 가장 핵심적인 요체이다. 이번 실험에서 각 나노입자의 자기조립을 통해 나노선이 제조됨을 확인하였다. 안정제로 사용된 thioglycolic acid(TGA)와 Cd 이온의 비율을 기존의 2.4:1에서 1.3:1로 낮추어 CdTe 나노선을 합성 하였다. 자기조립을 통해 생성된 나노입자는 곧고 긴 형태였으며 다결정을 이루고 있었다. 이렇게 합성된 나노선은 투과전자현미경(TEM)과 주사전자현미경(SEM)으로 관찰하였으며, 작게는 500 nm에서 크게는 $10{\mu}m$ 이상의 곧고 긴 나노선이 합성된 것을 확인할 수 있었다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권6호
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• pp.297-301
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• 2006

In the present work, we investigate the characteristics of new composition material, chalcogenide $Ge_1Se_1Te_2$ material in order to overcome the problems of conventional PRAM devices. The Tc of $Ge_1Se_1Te_2$ bulk was measured $231.503^{\circ}C$ with DSC analysis. For static DC test mode, at low voltage, two different resistances are observed. depending on the crystalline state of the phase-change resistor. In the first sweep, the as-deposited amorphous $Ge_1Se_1Te_2$ showed very high resistance. However when it reached the threshold voltage(about 11.8 V), the electrical resistance of device was drastically reduced through the formation of an electrically conducting path. The phase transition between the low conductive amorphous state and the high conductive crystal]me state was caused by the set and reset pulses respectively which fed through electrical signal. Set pulse has 4.3 V. 200 ns. then sample resistance is $80\sim100{\Omega}$. Reset pulse has 8.6 V 80 ns, then the sample resistance is $50{\sim}100K{\Omega}$. For such high resistance ratio of $R_{reset}/R_{set}$, we can expect high sensing margin reading the recorded data. We have confirmed that phase change properties of $Ge_1Se_1Te_2$ materials are closely related with the structure through the experiment of self-heating layers.

• 한국전기전자재료학회논문지
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• 제22권5호
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• pp.443-447
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• 2009

Bismuth-antimony-telluride based thermoelectric thin film materials were prepared by metal organic vapor phase deposition using trimethylbismuth, triethylantimony and diisopropyltelluride as metal organic sources. A planar type thermoelectric device has been fabricated using p-type $Bi_{0.4}Sb_{1.6}Te_3$ and n-type $Bi_{2}Te_{3}$ thin films. Firstly, the p-type thermoelectric element was patterned after growth of $5{\mu}m$ thickness of $Bi_{0.4}Sb_{1.6}Te_3$ layer. Again n-type $Bi_{2}Te_{3}$ film was grown onto the patterned p-type thermoelectric film and n-type strips are formed by using selective chemical etchant for $Bi_{2}Te_{3}$. The top electrical connector was formed by thermally deposited metal film. The generator consists of 20 pairs of p- and n-type legs. We demonstrate complex structures of different conduction types of thermoelectric element on same substrate by two separate runs of MOCVD with etch-stop layer and selective etchant for n-type thermoelectric material. Device performance was evaluated on a number of thermoelectric devices. To demonstrate power generation, one side of the device was heated by heating block and the voltage output was measured. The highest estimated power of 1.3 ${\mu}m$ is obtained at the temperature difference of 45 K.

• 한국인터넷방송통신학회논문지
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• 제23권6호
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• pp.41-46
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• 2023

본 논문에서는 W밴드 radial 전력 결합기용 TE10-TEM 모드 변환기에 대한 설계 방법을 제안하였다. 제안한 구조는 일반적으로 이용 가능한 핀을 이용하여 TEM 모드를 구현하도록 하였으며 2단의 임피던스 변환부 및 back-short 구조를 이용하여 TE10 모드에서 TEM 모드로 자연스럽게 변환되도록 설게 하였다. 제안한 모드 변환기의 핀 구조가 하우징에 접합되어 진동 및 충격의 환경이 성능에 영향 없도록 하였다. 제안한 구조의 back-to-back 특성은 92.5~97.7 GHz 대역에서 삽입손실 1.55 dB 이하 및 10 dB 이상의 반사손실을 가짐을 확인하였다. 제안한 모드 변환기를 이용하여 높은 출력 및 안정적인 환경조건을 요구하는 초소형 레이다 및 다양한 응용 분야에 적용이 가능하리라 판단된다.

• 전기의세계
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• 제20권2호
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• pp.9-14
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• 1971

N type single crystal CdTe is grown by doping Gallium as 0.01 percent, by using zone melting method. And also p type CdTe is grown by doping Ag, Sb, and Te as 0.01%. Resistivity and Concentration of the n.p type single crystal are measured. And then Li ions are implanted on the n type CdTe by high voltage accellerator with different amount of impurity. Indium is evaporated on the p type in high vacuum condition. These sample are heated so as to make P-N Junction in Argon gas flow. Electrical properties for solar cell are investigated. Photovoltage and current are found to be varyed according to following factor: 1) amount of impurity 2) diffusion thickness 3) temperature and time for making P-N junction. Efficiency of the P-N Junction evaporated Indium is 6.5 when it is heated at 380.deg. C for 15 minutie.

• 한국산업정보학회논문지
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• 제8권2호
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• pp.1-6
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• 2003

접지된 유전체 슬랩 위에 주기적으로 스트립 격자가 놓여 있는 주기구조에서 TE 편파된 평면파에 대한 전자파 산란현상을 이론적으로 해석하였다. 제시된 구조를 이론적으로 해석하여 수치 해석한 결과인 유체층의 두께 변화에 대한 반사파 전력과 모드별 계수, 입사각의 변화에 대한 반사파 전력 및 스트립상에 유기되는 전류 등을 제시하였다. 그리고 제시된 구조에서 관찰되는 Bragg blazing 현상에 관해서 상세히 기술하였다.