• Journal of Physiology & Pathology in Korean Medicine
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• v.21 no.1
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• pp.181-189
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• 2007

To examine the effects of HHCP on atopic dermatitis and its various immunopathologic parameters was induced by DNCB in NC/Nga mice and the animals were orally administrated with HHCP. We summarized the results obtained from serum levels of IgE and the numbers of various immune cells as follow. HHCP has no cytotoxic effects at the range of concentration (1-400 ${\mu}g$/ml) on fibroblast isolated from lung of BALB/c mice. HHCP significantly lowered the serum levels of IgE compared with control at 16 and 20 week. HHCP significantly reduced the number of CD19$^+$ cell in spleen and DLN, as well as the number of B220$^+$ /IgE$^+$ cell in DLN compared with control. HHCP significantly reduced the number of ${\alpha}$${\beta}$ TCR$^+$ in spleen and DLN, the number of CD8$^+$ in spleen compared with control, and also significantly reduced the number of CD3$^+$, CCR3, CD3$^+$/CD69$^+$, CD3/ CCR3, CD4$^+$, CD3$^+$/ CD4$^+$/CD45$^+$ cell in DLN. HHCP increased the number of NK$^+$ cells in spleen compared with control, in contrast significantly decreased the number of CD11c$^+$/ Classll$^+$ cell and CD11b$^+$/Gr-1$^+$ cell in DLN. Taken together, these results suggested that HHCP has suppressive effects on atopic dermatitis through the inhibition of IgE production and modulation of immune cell population in NC/Nga mice.

• Journal of Korea Port Economic Association
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• v.20 no.2
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• pp.131-149
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• 2004

With trend of container ships becoming larger and faster, the environment surrounding ports in North-East Asia is rapidly changing. Korea's largest port of Busan processed more than 10 million 20- feet equivalent containers in 2003, surpassing the 10-million TEU mark for the first time in its three decades of operation. However, the Port of Busan , the world's third-largest port in 2002, was eclipsed by Shanghai since July in 2003. The first massive strike of truckers crippled the Korea's logistics system in May and in September, the Port of Busan suffered from the second strike of truckers and damage by a powerful typhoon. By contrast, the port of Shenzhen in China increased its container-processing volume by 39.9 percent to 10.65 million TEU in 2003, and Shanghai, which passed Busan in terms of container volume in the middle of last year, further consolidated its position as the world's No. 3 port with an annual volume of 11.28 million TEU. After all, Busan recorded an annual container volume of 10.40 million TEU, slipping to fifth in rankings in 2003 and Busan's bid to become a Northeast Asian hub has suffered a further setback as these chinese ports overtook the port of Busan. But the port of Busan is located in the main trunk liking North America, Europe and South-East Asia. Once the project of Busan Newport is accomplished and the railway between South and North Korea is connected to TCR and TSR, the Port of Busan will have the most potential to become the international logistics center as the starting point of the land and sea routes encompassing all over the world.

• IMMUNE NETWORK
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• v.15 no.4
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• pp.199-205
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• 2015

T-bet is a critical transcription factor that regulates differentiation of Th1 cells from $CD4^+$ precursor cells. Since T-bet directly binds to the promoter of the IFN-${\gamma}$ gene and activates its transcription, T-bet deficiency impairs IFN-${\gamma}$ production in Th1 cells. Interestingly, T-bet-deficient Th cells also display substantially augmented the production of IL-2, a T cell growth factor. Exogenous expression of T-bet in T-bet deficient Th cells rescued the IFN-${\gamma}$ production and suppressed IL-2 expression. IFN-${\gamma}$ and IL-2 reciprocally regulate Th cell proliferation following TCR stimulation. Therefore, we examined the effect of T-bet on Th cell proliferation and found that T-bet deficiency significantly enhanced Th cell proliferation under non-skewing, Th1-skewing, and Th2-skewing conditions. By using IFN-${\gamma}$-null mice to eliminate the anti-proliferative effect of IFN-${\gamma}$, T-bet deficiency still enhanced Th cell proliferation under both Th1- and Th2-skewing conditions. Since the anti-proliferative activity of T-bet may be influenced by IL-2 suppression in Th cells, we examined whether T-bet modulates IL-2-independent cell proliferation in a non-T cell population. We demonstrated that T-bet expression induced by ecdysone treatment in human embryonic kidney (HEK) cells increased IFN-${\gamma}$ promoter activity in a dose dependent manner, and sustained T-bet expression considerably decreased cell proliferation in HEK cells. Although the molecular mechanisms underlying anti-proliferative activity of T-bet remain to be elucidated, T-bet may directly suppress cell proliferation in an IFN-${\gamma}$- or an IL-2-independent manner.

• Journal of Sensor Science and Technology
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• v.9 no.3
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• pp.171-176
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• 2000

The physical and electrical characteristics of MgO and Pt thin-films on it, deposited by reactive sputtering and rf magnetron sputtering, respectively, were analyzed with annealing temperature and time by four-point probe, SEM and XRD. Under annealing conditions of $1000^{\circ}C$ and 2 hr, MgO thin-film had the properties of improving Pt adhesion to $SiO_2$ and insulation without chemical reaction to Pt thin-film, and the sheet resistivity and the resistivity of Pt thin-film deposited on it were $0.1288\;{\Omega}/{\square}$ and $12.88\;{\mu}{\Omega}{\cdot}cm$, respectively. We made Pt resistance pattern on $SiO_2$/Si substrate by lift-off method and fabricated thin-film type Pt-RTD(resistance thermometer device) for micro thermal sensors by Pt-wire, Pt-paste and SOG(spin-on-glass). In the temperature range of $25{\sim}400^{\circ}C$, the TCR value of fabricated Pt-RTD with thickness of $1.0{\mu}m$ was $3927\;ppm/^{\circ}C$ close to the Pt bulk value. Resistance values were varied linearly within the range of measurement temperature.

• Korean Journal of Materials Research
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• v.26 no.4
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• pp.207-211
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• 2016

Ti films were deposited on glass substrates under various preparation conditions in a chamber of two-facing-target type dc sputtering; after deposition, the electric resistivity values were measured using a conventional four-probe method. Crystallographic orientations and microstructures, including the texture and columnar structure, were also investigated for the Ti films. The morphological features, including the columnar structures and surface roughness, are well explained on the basis of Thornton's zone model. The electric resistivity and the thermal coefficient of the resistivity vary with the sputtering gas pressure. The minimum value of resistivity was around 0.4 Pa for both the $0.5{\mu}m$ and $3.0{\mu}m$ thick films; the apparent tendencies are almost the same for the two films, with a small difference in resistivity because of the different film thicknesses. The films deposited at high gas pressures show higher resistivities. The maximum of TCR is also around 0.4 Pa, which is the same as that obtained from the relationship between the resistivity and the gas pressure. The lattice spacing also decreases with increasing sputtering gas pressure for both the $0.5{\mu}m$ and $3.0{\mu}m$ thick films. Because they are strongly related to the sputtering gas pressures for Ti films that have a crystallographic anisotropy that is different from cubic symmetry, these changes are well explained on the basis of the film microstructures. It is shown that resistivity measurement can serve as a promising monitor for microstructures in sputtered Ti films.

• Journal of Sensor Science and Technology
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• v.27 no.5
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• pp.311-316
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• 2018

An antenna-coupled bolometer-type terahertz sensor was designed, fabricated, evaluated, and utilized to obtain terahertz transmission images. The sensor consists of a thin film bowtie antenna that resonates accordingly in response to an incident terahertz beam, a heater that converts the applied current in the antenna into heat, and a microbolometer that converts the rise in temperature into a change in resistance. The device is fabricated by a bulk micromachining process on a 4-inch silicon wafer. The fabricated sensor chip has a size of $2{\times}2mm$ and an active area of $0.1{\times}0.1mm^2$. The temperature coefficient of resistance (TCR) of the bolometer film (VOx) is 2.0%, which is acceptable for bolometer applications. The output sensor signal is proportional to the power of the incident terahertz beam. Transmission images were obtained with a 2-axis scanning imaging system that contained the sensor. The small active area of the sensor will enable the development of highly sensitive focal plane array sensors in terahertz imaging cameras in the future.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.14 no.3
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• pp.49-58
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• 2000

This paper deals with a systematic approach to neural network controller design for static VAR compensator (SVC) using a learning algorithm of error back propagation that accepts error and change of error as inputs, the momentum learning technique is used for reduction of learning time, to improve system stability. A SVC, one of the Flexible AC Transmission System(FACTS), constructed by a fixed capacitor(FC) and a thyristor controlled reactor(TCR), is designed and implemented to improve the damping of a synchronous generator, as well as controlling the system voltage.TO verify the robustness of the proposed method, we considered the dynamic response of generator rotor angle deviation, angular velocity deviation and generator terminal voltage by applying a power fluctuation and rotor angle fluctuation in initial point when heavy load and normal load. Thus, we prove the usefulness of proposed method to improve the stability of single machine-infinite bus with SVC system.

• KIEE International Transactions on Power Engineering
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• v.3A no.1
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• pp.17-26
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• 2003

In this paper, the comparative steady-state operating performance analysis algorithms of the stand-alone single-phase self-excited induction generator (SEIG) is presented on the basis of the two nodal admittance approaches using the per-unit frequency in addition to a new state variable de-fined by the per-unit slip frequency. The main significant features of the proposed operating circuit analysis with the per-unit slip frequency as a state variable are that the fast effective solution could be achieved with the simple mathematical computation effort. The operating performance results in the simulation of the single-phase SEIG evaluated by using the per-unit slip frequency state variable are compared with those obtained by using the per-unit frequency state variable. The comparative operating performance results provide the close agreements between two steady-state analysis performance algorithms based on the electro-mechanical equivalent circuit of the single-phase SEIG. In addition to these, the single-phase static VAR compensator; SVC composed of the thyristor controlled reactor; TCR in parallel with the fixed excitation capacitor; FC and the thyristor switched capacitor; TSC is ap-plied to regulate the generated terminal voltage of the single-phase SEIG loaded by a variable inductive passive load. The fixed gain PI controller is employed to adjust the equivalent variable excitation capacitor capacitance of the single-phase SVC.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.6
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• pp.297-303
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• 2003

Mn-Ni-Co type thin films were prepared at various conditions by a rf magnetron sputtering system. At the condition. or substrate temperature of $300^{\circ}C$ and $Ar/O_2$= 10/0, a cubic spinel phase was obtained. When oxygen was included in process gas, a cubic spinel phase was not formed even after the thermal annealing at $900^{\circ}C$. The thermistor thin film had no other elements except Mn, Ni and Co. The infrared reflection spectra of the thermistor thin films showed that the films had somewhat high reflectance for incoming infrared ray with some angle. The etch rate of the thermistor thin films was about 63nm/min at a condition of DI water : $HNO_3$: HCl = 60 : 30 : 10 vol%. The B constant and temperature coefficient of resistance of the thermistor thin films were 3500 K and -3.95 %/K, respectively. The voltage responsivity of the thermistor thin film infrared sensor was 108.5 V/W and its noise equivalent power and specific detectivity were $5.1\times 10^{-7}$ W/$Hz^{-1/2}$ and $0.2\times 10^6$cm $Hz^{1/2}$/W, respectively.

• KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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• v.3B no.1
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• pp.1-9
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• 2003

This paper deals with the nodal admittance approach steady-state frequency domain analysis of the three-phase self-excited induction generator (SEIG) driven by the variable speed prime mover as the wind turbine. The steady-state performance analysis of this power conditioner designed for the renewable energy is based on the principle of equating the input mechanical power of the three-phase SEIG to the output mechanical power of the variable speed prime mover mentioned above. Us-ing the approximate frequency domain based equivalent circuit of the three-phase SEIG. The main features of the present algorithm of the steady-state performance analysis of the three-phase SEIG treated here are that the variable speed prime mover characteristics are included in the approximate equivalent circuit of the three-phase SEIG under the condition of the speed changes of the prime mover without complex computations processes. Furthermore, a feedback closed-loop voltage regulation of the three-phase SEIG as a power conditioner which is driven by variable speed prime movers such as the wind turbine(WT) employing the static VAR compensator(SVC) circuit composed of the thyristor phase controlled reactor(TCR) and the thyristor switched capacitor(TSC) controlled by the PI controller is designed and considered for wind-turbine driving power conditioner.