• Journal of the Korean Chemical Society
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• v.45 no.4
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• pp.304-311
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• 2001

A study has been carried out on the extraction chromatographic separation of fission products from spent pressurized water reactor (PWR) fuels for inductively coupled plasma atomic emission spectrometric analysis. Impregnation capacity of tri-n-butyl phosphate (TBP), which is well known as an extractant in the field of uranium separation from various nuclear grade materials, on Amberlite XAD polymeric macroporous support materials was measured. Amberlite XAD-16 of which the surface area is the highest was selected as a support material because its TBP impregnation capacity was the largest in Amberlite XADs. Sorption behaviour of this TBP impregnated resin was investigated for the fission product elements using acidic solutions simulated for dissolver solutions of spent PWR fuels. The parameters affecting the performance of the separation system were optimized. The fission product elements studied excluding Pd and Ru were quantitatively recovered with the precision of less than 3.1%.

• Journal of Environmental Science International
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• v.24 no.1
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• pp.47-53
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• 2015

Removal characteristics of Cu(II) ions by solid-phase extractant immobilized D2EHPA and TBP in PVC were investigated. Cu(II) ion concentrations in the solution and removal capacity of Cu(II) ion according to operation time were compared. The lower the initial concentration of Cu(II) ion in aqueous solution was, the removal capacity of Cu(II) ion by solid-phase extractant was increased relatively. The bigger the initial concentration of Cu(II) ion was, the removal capacity of Cu(II) ion was increased relatively. The pseudo-second-order kinetics according to operation time was showed more satisfying results than the pseudo-first-order kinetics for the removal velocity of Cu(II) ion. The removal capacity of Cu(II) ion was 0.025 mg/g in aqueous solution of pH 2, but the removal capacity of Cu(II) ion was increased to 0.33 mg/g mg/g in aqueous solution of pH 4 according to increasing pH.

• Bulletin of the Korean Chemical Society
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• v.35 no.7
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• pp.2109-2113
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• 2014

Solvent extraction of Fe(III) from chloride solution by using a mixture of D2EHPA (Di-(2-ethylhexyl)-phosphoric acid) and TBP (Tri-butyl phosphate) and the reductive stripping of Fe(III) from the loaded organic were investigated. Quantitative extraction of Fe(III) from the solution (Fe concentration = 90 g/L) was accomplished in two cross-current extraction stages by using the mixture of D2EHPA and TBP. In order to facilitate the stripping efficiency, a reductive stripping method was employed by using $H_2SO_3$ or $Na_2SO_3$ as a reducing agent. The addition of $H_2SO_4$ into reducing agents led to improvement in the stripping efficiency while high concentration acid would suppress it. Both of the mixtures of $H_2SO_4+H_2SO_3$ and $H_2SO_4+Na_2SO_3$ showed good efficiency for the stripping of Fe(III), while the latter was recommended as the stripping solution based on the economics and experimental condition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.6
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• pp.471-476
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• 2003

Au/oxide/n-InP Schottky diodes were fabricated from heteroepitaxial InP layers grown on GaAs substrates by the metalorganic vapor phase epitaxy (MOVPE) method from a new combination of source materials: ethyldimethylindium (EDMIn) and tertiarybutylphosphine (TBP). Anodic oxidation technique by using a solution of 10 g of ammonium pentaborate in 100 cc of ethylene glycole as the electrolyte was used to deposit a thin oxide layer. The barrier heights determined from three different techniques, current-voltage (I-V) measurements at room temperature and in the temperature range of 273 K - 373 K, and room temperature capacitance-voltage (C-V) measurements are in good agreement, 0.7 - 0.9 eV which is considerably high as compared to the 0.45 - 0.55 eV in Au/n-InP Schottky diode without a Passivation layer. The ideality factors of 1.1 - 1.3 of the Schottky diodes were also determined from the I-Y characteristics. Deep level transient spectroscopy (DLTS) studies revealed only one shallow electron state at 92.6 meV below the bottom of the conduction band and no deep state in the heteroepitaxial InP layers grown from EDMIn and TBP.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.1
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• pp.12-17
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• 1998

The heteroepitaxial growth of InP and GaInAs on GaAs substrates has been studied by using a new combination of source materials: ethyldimethylindium (EDMIn) and trimethylgallium (TMGa) as group III sources, and tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP) as group V sources. Device quality InP heteroepitaxial layers were obtained by using a two-step growth process under atmospheric pressure, involving a growth of an initial nucleation layer at low temperature followed by high temperature annealing and the deposition of epitaxial layer at a growth temperature. The continuity and thickness of nucleation layer were important parameters. The InP layers deposited at 500$^{\circ}$- 55$0^{\circ}C$ are all n-type, and the electron concentration decreases with decreasing TBP/EDMIn molar ratio. The excellent optical quality was revealed by the 4.4 K photoluminescence (PL) measurement with the full width at half maximum (FWHM) of 4.94 meV. Epitaxial Ga\ulcorner\ulcorner\ulcornerIn\ulcorner\ulcorner\ulcornerAs layers have been deposited on GaAs substrates at 500$^{\circ}$ - 55$0^{\circ}C$ by using InP buffer layers. The composition of GaInAs was determined by optical absorption measurements.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.44 no.4
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• pp.496-501
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• 1995

The N $O_{2}$ gas-detection characteristics were investigated using the functional organic Langmuir-Blodgett (LB) films of Copper-tetra-tert-butylphthalocyanine (CuTBP), Dilithium phthalocyanine (Li$_{2}$Pc), N-docosylpyridinium TCNQ(C$_{22}$Py(TCNQ)), Polyamic acid alkylamine salts (PAAS). The optimum conditions for a film deposition were obtained through a study of .pi.-.ALPHA. isotherms and the deposited film status was confirmed by electrical and optical methods such as UV/visible absortion spectra, thickness measurements by ellipsometry, and electrical capacitances. A response of the LB films to the N $O_{2}$ gas was measured by a change of the electrical conductivities when the film is exposed to the gases. The CuTBP LB film shows the biggest change of the electrical conductivities when it is exposed to the N $O_{2}$ gases. And the order of gas-detection performance is the following;Li$_{2}$Pc, $C_{22}$Py(TCNQ), and PAAS LB films. Especially, the CuTBP and Li$_{2}$Pc LB films not only show the bigger change in the electircal conductivities when exposed to the gas, but return to the original state when the gas is desorbed.d.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1223-1225
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• 1995

The $NO_2$ gas-detection characteristics were investigated using the functional organic Langmuir-Blodgett(LB) films of Copper-tetra-tert-butylphthalocyanine(CuTBP). The optimum conditions for a film deposition were obtained through a study of $\pi$-A isotherms, and the deposited film status was confirmed by the ellipsometry measurements. The $NO_2$ gas response experiments under 200 ppm concentration at room temperature show that there are increment of electrical conductivity by 40 times and 25 seconds of response time, and 40 seconds of recovery times.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.179-182
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• 1995

The NO$_2$gas-detection characteristics were investigated using the functional organic Langmuir-Blodgett(LB) films of Copper-tetra-tert-butylphthalocyanine(CuTBP). The optimum conditions for a film deposition were obtained through a study of $\pi$-A isotherms, and the deposited film status was confirmed by the ellipsometry measurements. It was found that at room temperature there are increments of electrical conductivities by 40 times, 25 seconds of response time and 40 seconds of response time when the films were exposed to the 200ppm NO$_2$gases. We hale observed an increase of the electrical conductivities as the density of NO2 gas increases.

• Bulletin of the Korean Chemical Society
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• v.34 no.2
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• pp.590-594
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• 2013

Semiconductor CdSe nanowires (NWs) can serve as model systems for investigating the physical properties of one-dimensional (1D) nanostructures and have great potential for applications in electronics and photonic nanodevices. With numerous attractions arisen from their physical properties, CdSe NWs have been synthesized by vapor-liquid-solid (VLS) methods, but they have some limitations of high reaction temperature and low production. Here, we synthesized CdSe NWs via the solution-liquid-solid (SLS) mechanisms using bismuth (Bi) covered substrates as a low-melting point catalyst and compared the products after injecting identical amount of Se and different amount of tributylphosphine (TBP). CdSe NWs have similar diameters but longer lengths with decreasing TBP, so we proposed the role of TBP as a solvent and capping agent of Se.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.05a
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• pp.79-82
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• 1994

We have manufacture Copper-tetra-tert-butylphalocyanine (CuTBP)Langmuir-Blodgett(LB) films, which is known be sensitive to NO$_2$ gab. A response of these films to the NO$_2$ gab was studied. A surface pleasure of 25mN/m was obtained as a proper one for a film deposition. A deposited film status was identified with Uv/visible absorption spectra, ellipsometry measurements, and current-voltage(I-Y) characteristics. The NO$_2$ gas response experiments under 200ppm conducentration show that there are increment of electrical conductivity by 12 times, 5 seconds of response time, and 5 seconds of response time, and 90 seconds of recovery time.