• 한국분말재료학회지
• /
• 제15권6호
• /
• pp.489-495
• /
• 2008

Colored tantalum oxy-nitride (TaON) and tantalum nitride ($Ta_{3}N_{5}$) were synthesized by ammonolysis. Oxygen deficient tantalum oxides ($TaO_{1.7}$) were produced by a titration process, using a tantalum chloride ($TaCl_5$) precursor. The stirring speed and the amount of $NH_{4}OH$ were important factors for controling the crystallinity of tantalum oxides. The high crystallinity of tantalum oxides improved the degree of nitridation which was related to the color value. Synthesized powders were characterized by XRD, SEM, TEM and Colorimeter.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 추계학술대회 논문집
• /
• pp.303-305
• /
• 2000

The effect of anisotropy field on the high frequency magnetic characteristics of FeTaN films was investigated. Those films show good magnetic properties : 4$\pi$Ms of 13KG, Hc of 0.6 Oe, effective permeability(${\mu}$') of 800 with a stable frequency response up to 800MHz. The films also show a large anisotropy field(Hk) over 21Oe. It result from the increased anisotropy of patterned FeTaN films. The combination of high saturation magnetization and relatively high Hk in these films is believed to the partly responsible for FeTaN for the excellent high-frequency behavior.

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2012년도 춘계학술발표회 논문집
• /
• pp.254-254
• /
• 2012

The purposed of this work was to determine surface charateristics of anodized Ti-30Nb-xTa alloys with Ta content. Samples were prepared by arc melting, followed by followed by homogenization for 12 hr at $1000^{\circ}C$ in argon atmosphere. The electrolyte for anodization treatment was prepared by mixing 465ml $H_2O$ with 35M $H_3PO_4$ and anodized at 180V to 220V. The microstructures of the alloys were examined by X-ray diffractometer (XRD) and optical microscopy (OM). Surface characteristics of anodized Ti-30Nb-xTa alloys was investigated by potentiodynamic test and potentiostatic in 0.9% Nacl solution at $36.5{\pm}1^{\circ}C$. It was observed that the changed ${\alpha}$ phase to ${\beta}$ phase with Ta content.

• 한국반도체및디스플레이장비학회:학술대회논문집
• /
• 한국반도체및디스플레이장비학회 2003년도 춘계학술대회 발표 논문집
• /
• pp.106-111
• /
• 2003

Tantalum nitride(TaN) films were deposited by atomic layer deposition(ALD) and plasma assisted atomic layer deposition(PAALD). The deposition of the TaN thin film has been performed using pentakis (ethylmethlyamino) tantalum (PEMAT) and ammonia($NH_3$) as precursors at temperature of $250^{\circ}C$, where the temperature was proven to be ALD window for TaN deposition from our previous experiments. The PAALD deposited TaN film shows better physical properties than thermal ALD deposited TaN film, due to its higher density$(~11.59 g/\textrm{cm}^3$) and lower carbon(~ 3 atomic %) and oxygen(~ 4 atomic %) concentration of impurities.

• 한국콘텐츠학회논문지
• /
• 제14권4호
• /
• pp.237-242
• /
• 2014

본 연구의 목적은 저탄성계수 Ti-30Ta 합금에 Zr 원소를 첨가하여 표면 특성 및 부식 거동을 조사하였다. 저탄성계수 Ti-30Ta-xZr(x : 3, 7, 15 wt %)합금은 아크 멜팅기로 제조하였고, 아르곤 분위기에서 $1000^{\circ}C$ 24시간 동안 열처리하였다. 합금의 미세구조는 FE-SEM 그리고 XRD를 이용하여 조사하였다. 전기화학적 특성은 시편 작업전극, 고밀도 탄소 보조전극 그리고 포화칼로멜 기준전극의 통상적인 3상을 이용하여 수행하였다. Ti-30Ta-xZr 합금의 분극 거동 결과, 균질화 처리된 Ti-30Ta-15Zr 합금의 부동태 전류밀도가 다른 합금에 비해 낮았다.

• 한국재료학회지
• /
• 제4권6호
• /
• pp.620-625
• /
• 1994

자자들은 최근 비고용 Cu-Ta계의 기계적 합금화(Mechanical Alloying) 방법을 이용하여 이계에 있어서 비정질상의 형성에 대한 구조적 확인을 중성자 회절과 EXAFS(Extended X-ray Absorption Fine Structure)의 실험결과로 부터 얻었다. Cu-Ta계와 같이 혼합 엔탈피(Heat of Mixing: $\Delta$ Hmix)가 정인계에 있어서 비정질상 형성에 대한 연구는 구조적인 측면 뿐만 아니라. 시료의 전자물성에 대해서도 많은 연구가 되어야만 할 것으로 사료된다. 따라서 본 논문에서는 120시간 MA방법으로 제작한 시료에 대하여 초전도 천이온도 및 X선 광전자분광 실험에서 얻은 가전자대 구조의 전자물성을 측정하고, 그 결과로부터 이종원자 Cu와 Ta간의 결합은 화하결합에 의한 생성임을 확인하였는데, 이들 결과로부터 120시간 MA를 행하여 얻어진 시료는 확실하게 비정질 합금임을 알 수 있었다.

• Journal of Electrical Engineering and Technology
• /
• 제1권1호
• /
• pp.120-126
• /
• 2006

Ferroelectric materials have been widely investigated for high density dynamic random access memories, opto-electrics, and tunable microwave devices due to their properties. In this study, we have investigated the dielectric properties of Ti doped $K(Ta,\;Nb)O_3$ thin films. By doping Ti Into the $K(Ta,Nb)O_3$ system, Ti with a valence value of +4 will substitute Ta or Nb ions with a valence value of +5. This substitution will introduce an acceptor state. Therefore, this introduced acceptor state will reduce dielectric loss by trapping electrons. Using 3% Ti-doped $K(Ta,Nb)O_3\;targets,\;K(Ta,Nb)O_3$:Ti films were grown in MgO(001) crystals using pulsed laser deposition. First, growth conditions were optimized. A reduction in the loss tangent was observed for Ti-doped $K(Ta,Nb)O_3$ relative to undoped films, although a reduction in tunability is also seen. The crystallinity, morphology, and tunability of $K(Ta,Nb)O_3$:Ti films are reported.

• 한국주조공학회지
• /
• 제17권4호
• /
• pp.371-378
• /
• 1997

The study for direct synthesis of TaC carbide which was a reaction product of tantalum and carbon in the cast iron was performed. Cast iron which has hypo-eutectic composition was cast bonded in the metal mold with tantalum thin sheet of thickness of $100{\mu}m$. The contents of carbon and silicon of cast iron matrix was controlled to have constant carbon equivalent of 3.6. The chracteristics of microstructure and the formation mechanism of TaC carbide in the interfacial reaction layer in the cast iron/tantalum thin sheet heat treated isothermally at $950^{\circ}C$ for various time were examined. TaC carbide reaction layer was grown to the dendritic morphology in the cast iron/tantalum thin sheet interface by the isothermal heat treatment. The composition of TaC carbide was 48.5 at.% $Ti{\sim}48.6$ at.% C-2.8 at.% Fe. The hardness of reaction layer was MHV $1100{\sim}1200$. The thickness of reaction layer linearly increased with increasing the total content of carbon in the cast iron matrix and isothermal heat treating time. The growth constant for TaC reaction layer was proportional to the log[C] of the matrix. The formation mechanism of TaC reaction layer at the interface of cast iron/tantalum thin sheet was proved to be the interfacial reaction.

• International Journal of Oral Biology
• /
• 제44권2호
• /
• pp.43-49
• /
• 2019

Tannic acid (TA) is a water-soluble polyphenol compound found in various herbal plants. We investigated the chemopreventive effects of TA on FaDu hypopharyngeal squamous carcinoma cells. In an 3-(4,5-dimethylthiazol-2-yl)-2,5-diphenyltetrazolium bromide (MTT) assay, TA showed dose-dependent cytotoxicity with a half maximal inhibitory concentration (IC50) of 50 ?M. Cell cycle analysis and immunofluorescence imaging demonstrated that under low-dose ($25{\mu}M$) treatment, FaDu cells were arrested in G2/M phase, and as the dose of TA was increased, apoptosis was induced with the increase of cell population at sub-G1 phase. The expressions of various cyclins, including cyclin D1 and cyclin-dependent kinases (CDK-1 and CDK-2), were down-regulated at low doses of TA, whereas apoptotic effectors such as cleaved caspase 3, cleaved caspase 7, and poly (ADP-ribose) polymerase (PARP) were expressed in a dose-dependent manner in Western blotting. In addition, TA-induced apoptosis of FaDu cells might be mediated by the extracellular signal-regulated kinase (ERK)/mitogen-activated protein kinase pathway, with the upregulation of p-AKT/p-PKB (phosphorylated protein kinase B) and p-ERK. Overall, our data support the hypothesis that TA is a potential candidate agent for the treatment of hypopharyngeal cancer.

• 동아시아식생활학회지
• /
• 제12권1호
• /
• pp.15-22
• /
• 2002

식품재료인 메주와 다시마 그리고 이들 재료를 사용하여 자연발효에 의해 제조한 전통 막장에 대한 일반성분을 분석한 결과 기존의 막장에 비해 무기물의 함량이 증가하였다. MNNG에 대한 항돌연변이 효과(400$\mu$g/plate)에서 S. typhimurium TA100 균주에 대해 다시마 분말 5% 첨가 막장이 다른 첨가 농도보다 높은 95.0%의 강한 억제효과를 나타내었다. 4NQO에서도 5%의 다시마 분말을 첨가한 막장이 TA98과 TA100 두균주에 대해서 400$\mu$g/plate에서 각각 81.4%와 88.8%로 다른 첨가 군보다 높은 억제효과를 나타내었다. B($\alpha$)P에 대한 억제효과에서는 동일농도에서 TA98, TA100 두균주에 대하여 다시마 분말 5% 첨가 막장이 각각 85.3%와 91.0%로 다른 첨가군보다 높은 억제활성을 나타내었으며, Trp-P-1에 대해 두균주에 대해서는 96.5%와 92.0%로 다른 농도보다 높은 억제효과를 나타내었다. 암세포 성장 억제효과를 검토한 결과에서는 5%다시마 분말 첨가 막장이 1.0mg/ml시료농도에서 A549가 61.2%, KATOIII는 61.8%, 그리고 HepG2는 66.8%의 성장억제 효과를 나타내었다.