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Nanotube Morphology Change of Ti-Ta-Zr Alloy as Zr Content

  • Kim, Won-Gi;Choe, Han-Cheol;Ko, Yeong-Mu
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2008.11a
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    • pp.105-106
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    • 2008
  • Nanotube morphology change of Ti-Ta-Zr alloy as Zr content increase has been researched using various experimental methods. Ti-Ta-Zr(3, 7 and 15 wt%) alloys were prepared by arc melting and nano-structure controlled for 24 hr at $1000^{\circ}C$ in argon atmosphere. Formation of oxide nanotubes are conducted by anodizing a Ti-Ta-Zr alloy in $H_3PO_4$ electrolytes with small amounts of fluoride ions at room temperature. Electrochemical experiments were carried out with conventional three-electrode configuration with a platinum counter electrode and a saturated calomel reference electrode. The samples were embedded with epoxy resin, leaving a square surface area of $10mm^2$ exposed to the anodizing electrolyte, 1.0M $H_3PO_4$ containing 0.8wt% NaF.

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Diamond Film Deposition on Ceramic Substrates by Hot-Filament CVD and Evaluation of the Adhesion (HF-CVD법에 의한 세라믹스 기판에의 다이아몬드박막 합성과 그 밀착성 평가)

  • Sin, Sun-Gi;Matsubara, Hideaki
    • Korean Journal of Materials Research
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    • v.10 no.8
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    • pp.575-580
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    • 2000
  • Diamond thin films were deposited on $Si_3N_4$, SiC, TiC and $Al_2O_3$, substrates by the CVD method using Ta(TaC)Filament, and the appearance of the diamond films and their adhesion properties were examined by SEM, optical microscopy, indentation test and compression topple test. Diamond films were deposited at lower $CH_4$ concentration than 5%$CH_4$ for all kinds of the substrate material, but graphitic(amorphous)carbon was observed at 10%$CH_4$. The diamond film of about $12\mu\textrm{m}$ thickness on WC substrate partly peeled off, but the film on $Si_3N_4$ substrate held good adhesion. The indentation test showed that roughly ground surface was very effective for adhesion of diamond films to substrate. The topple test revealed that film thickness was an important factor governing the adhesion of the diamond film.

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The Giant Magnetoresistance Properties of CoFe/Cu/NiFe Pseudo Spin Valve (CoFe/Cu/NiFe Pseudo스핀밸브의 자기저항 특성)

  • Choi, W.J.;Hong, J.P.;Kim, T.S.;Kim, K.Y.
    • Journal of the Korean Magnetics Society
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    • v.12 no.6
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    • pp.212-217
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    • 2002
  • The pseudo spin valve with a structure of Tl/CoFe(t $\AA$)/Cu(30 $\AA$)/NiFe(50 $\AA$)/Ta, showing giant magnetoresistance properties by utilizing coercivity difference between only two soft ferromagnetic layers were produced by d.c UHV magnetron sputtering system. In pseudo spin valve Ta/CoFe/Cu/NiFe/Ta, the magnetic and magnetoresistance properties with change of CoFe thickness were investigated. When the thickness of CoFe was 60 $\AA$, a typical MR curve of pseudo spin valve structure was obtained, showing MR ratio of 3.8 cio and the coercivity difference of 27.4 Oe with a sharp change of hard layer switching. When the CoFe thickness was varied from 20 to 100 $\AA$, coercivity difference between two layers was increased to 40 $\AA$. and decreased to 100 $\AA$ gradually. It is thought the change in coercivity of hard layer was due to the crystallinity and magnetostriction of thin CoFe layer. In order to improve the MR property in CoFe/Cu/NiFe trier layer structure, CoFe layer with change of 2-20 $\AA$ thick was inserted between Cu and NiFe. When the thickness of CoFe was 10 $\AA$, MR ratio was 6.7%, showing excellent MR property. This indicates 50 % higher than that of CoFe/Cu/NiFe pseudo spin valve.

Chemical vapor deposition of $TaC_xN_y$ films using tert-butylimido tris-diethylamido tantalum(TBTDET) : Reaction mechanism and film characteristics

  • Kim, Suk-Hoon;Rhee, Shi-Woo
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2009.11a
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    • pp.24.1-24.1
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    • 2009
  • Tantalum carbo-nitride($T_aC_xN_y$) films were deposited with chemical vapor deposition(CVD) using tert-butylimido tris-diethylamido tantalum (TBTDET, $^tBu-N=Ta-(NEt_2)_3$, $Et=C_2H_5$, $^tBu=C(CH_3)_3$) between $350^{\circ}C$ and $600^{\circ}C$ with argon as a carrier gas. Fourier transform infrared (FT-IR)spectroscopy was used to study the thermal decomposition behavior of TBTDET in the gas phase. When the temperature was increased, C-H and C-N bonding of TBTDET disappeared and the peaks of ethylene appeared above $450^{\circ}C$ in the gas phase. The growth rate and film density of $T_aC_xN_y$ film were in the range of 0.1nm/min to 1.30nm/min and of $8.92g/cm^3$ to $10.6g/cm^3$ depending on the deposition temperature. $T_aC_xN_y$ films deposited below $400^{\circ}C$ were amorphous and became polycrystal line above $500^{\circ}C$. It was confirmed that the $T_aC_xN_y$ film was a mixture of TaC, graphite, $Ta_3N_5$, TaN, and $Ta_2O_5$ phases and the oxide phase was formed from the post deposition oxygen uptake. With the increase of the deposition temperature, the TaN phase was increased over TaC and $Ta_3N_5$ and crystallinity, work function, conductivity and density of the film were increased. Also the oxygen uptake was decreased due to the increase of the film density. With the increase of the TaC phase in $T_aC_xN_y$ film, the work function was decreased to 4.25eV and with the increase of the TaN phase in $T_aC_xN_y$ film,it was increased to 4.48eV.

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Anti-fatigue effect of tormentic acid through alleviating oxidative stress and energy metabolism-modulating property in C2C12 cells and animal models

  • Ho-Geun Kang;Jin-Ho Lim;Hee-Yun Kim;Hyunyong Kim;Hyung-Min Kim;Hyun-Ja Jeong
    • Nutrition Research and Practice
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    • v.17 no.4
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    • pp.670-681
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    • 2023
  • BACKGROUND/OBJECTIVES: Oxidative stress is caused by reactive oxygen species and free radicals that accelerate inflammatory responses and exacerbate fatigue. Tormentic acid (TA) has antioxidant and anti-inflammatory properties. Thus, the aim of present study is to determine the fatigue-regulatory effects of TA in H2O2-stimulated myoblast cell line, C2C12 cells and treadmill stress test (TST) and forced swimming test (FST) animal models. MATERIALS/METHODS: In the in vitro study, C2C12 cells were pretreated with TA before stimulation with H2O2. Then, malondialdehyde (MDA), lactate dehydrogenase (LDH), creatine kinase (CK) activity, tumor necrosis factor (TNF)-α, interleukin (IL)-6, superoxide dismutase (SOD), catalase (CAT), glycogen, and cell viability were analyzed. In the in vivo study, the ICR male mice were administered TA or distilled water orally daily for 28 days. FST and TST were then performed on the last day. In addition, biochemical analysis of the serum, muscle, and liver was performed. RESULTS: TA dose-dependently alleviated the levels of MDA, LDH, CK activity, TNF-α, and IL-6 in H2O2-stimulated C2C12 cells without affecting the cytotoxicity. TA increased the SOD and CAT activities and the glycogen levels in H2O2-stimulated C2C12 cells. In TST and FST animal models, TA decreased the FST immobility time significantly while increasing the TST exhaustion time without weight fluctuations. The in vivo studies showed that the levels of SOD, CAT, citrate synthase, glycogen, and free fatty acid were increased by TA administration, whereas TA significantly reduced the levels of glucose, MDA, LDH, lactate, CK, inflammatory cytokines, alanine transaminase, aspartate transaminase, blood urea nitrogen, and cortisol compared to the control group. CONCLUSIONS: TA improves fatigue by modulating oxidative stress and energy metabolism in C2C12 cells and animal models. Therefore, we suggest that TA can be a powerful substance in healthy functional foods and therapeutics to improve fatigue.

High density plasma etching of novel dielectric thin films: $Ta_{2}O_{5}$ and $(Ba,Sr)TiO_{3}$

  • Cho, Hyun
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.11 no.5
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    • pp.231-237
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    • 2001
  • Etch rates up to 120 nm/min for $Ta_{2}O_{5}$ were achieved in both $SF_{6}/Ar$ and $Cl_{2}/Ar$ discharges. The effect of ultraviolet (UV) light illumination during ICP etching on $Ta_{2}O_{5}$ etch rate in those plasma chemistries was examined and UV illumination was found to produce significant enhancements in $Ta_{2}O_{5}$ etch rates most likely due to photoassisted desorption of the etch products. The effects of ion flux, ion energy, and plasma composition on (Ba, Sr)$TiO_3$ etch rate were examined and maximum etch rate ~90 nm/min was achieved in $Cl_{2}/Ar$ ICP discharges while $CH_{4}/H_{2}/Ar$ chemistry produced extremely low etch rates (${\leq}10\;nm/min$) under all conditions.

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Electrohemical and optical properties of Ta$_2$O$_5$ thin film electrolyte EC windows (Ta$_2$O$_5$ 박막전해질 EC 창의 전기화학 및 광학적 특성에 관한 연구)

  • 김용혁;백지흠;조원일;윤경석;박인철;주재백
    • Journal of the Korean institute of surface engineering
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    • v.30 no.4
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    • pp.231-238
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    • 1997
  • Tantalum oxide thin filme has an amorphous structure and a high resistivity. Its stoichiometric structure was $Ta_2O_{5.3}$ and the transmission ratio was 80%. The high resistivity of $Ta_2O_{5.3}$ thin film electrolyte made an EC windows without electrical shottness, but the bleached/colored cur rent was very low because of the low ion conductivith. Upon adding moisture into the system, the $\Delta$T increased upto 25 %. proton concentration increase was the main cases to improve optical property. The influence of adding precious or transition metal film(~100 $\AA$ thickness) in $Ta_2O_5$layer on the color change performance was observed. The metal insertion layers had formed hydroxide and they behaved as a stable proton source. The transmission diffrnece and cycle life were greatly enhanced in the case of Ti inssertion.The $\Delta$T was 50% and the cycle life was 18, 000.

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Etching Kinetics Of $SrBi_2Ta_2O_{9}$ Thin Film in $Cl_{2}$/$CF_{4}$/Ar gas Chemistry ($Cl_{2}$/$CF_{4}$/Ar gas chemistry에 의한 $SrBi_2Ta_2O_{9}$ 박막의 식각 특성)

  • 김동표;김창일;이원재;유병곤;김태형;장의구
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.62-65
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    • 2001
  • $SrBi_2Ta_2O_{9}$ thin films were etched in inductively coupled $Cl_{2}$/$CF_{4}$/Ar plasma. The maximum etch rate was 1060 $\AA\textrm{m}$/min in $Cl_{2}$/$CF_{4}$/Ar (80). The chemical reactions on the etched surface were studied with x-ray photoelectron spectroscopy. The etching of SBT thin films in $Cl_{2}$/$CF_{4}$/Ar were etched by chemically assisted reactive ion etching. The small addition of $Cl_2$ into $CF_4$(20)/Ar(80) plasma will decrease the fluorine radicals and the increase Cl radical.

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Effect of Hepatotoxicants on the Biliary and Urinary Excretion of Acetaminophen and its Metabolites in Rats (간독성물질들이 아세트아미노펜의 대사와 배설에 미치는 영향)

  • 박기숙;서경원;정태천;황세진;김효정
    • Biomolecules & Therapeutics
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    • v.1 no.1
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    • pp.50-57
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    • 1993
  • This study characterized the effect of liver injury produced by hepatotoxicants on the biliary and urinary excretion of acetaminophen(AA) metabolites. Liver damage was produced in male S.-D. rats, 24 hr after dosing with carbon tetrachloride(4CCl_4,$ 0.75 mι/kg, ip) or thioacetamide(TA, 200 mg/kg, ip), or 16 hr after administration of cadmium chloride(4CdCl_2,$ 3.9 mg/kg, iv). Liver damage without renal injury was confirmed by measuring serum enzymes, creatinine and BUN levels as well as by histopathological examination. AA and its metabolites were measured for 3 hr by HPLC in rats injected iv with 1 mmo1/kg of AA. The excreted amounts of AA-glucuronide into bile were reduced to 60~70% of control rats by hepatotoxicants, but did not change urinary excretion of AA-glucuronide and AA-sulfate. Treatments with $CCl_4,\; CdCl_2$ and TA decreased the total (biliary plus urinary) excretion of thioethers of AA(30~50% of control), suggesting that these toxicants decrease cytochrome P-450-mediated toxification of AA. However, treatments of $CdCl_2$and TA markedly enhanced the excretion of AA-mercapturate into urine. Thus, 4CdCl_2$ and TA not only influence the formation of AA-glutathione, but may also alter the excretory routes (i.e. bile and urine) for the elimination of AA-metabolite.

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A HISTOMORPHOMETRIC STUDY OF BONE APPOSITION TO NEWLY DEVELOPED TI-BASED ALLOYS IN RABBIT BONE (가토의 경골에 이식된 새로운 티타늄계 합금 주위의 골형성에 관한 형태학적 연구)

  • Kim, Tae-In
    • The Journal of Korean Academy of Prosthodontics
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    • v.36 no.5
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    • pp.701-720
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    • 1998
  • Research advances in dental implantology have led to the development of several different types of materials and it is anticipated that continued research will lead to advanced dental implant materials. Currently used pure titanium has relatively low hardness and strength which may limit its ability to resist functional loads as a dental implant. Ti-6Al-4V also has potential problems such as corrosion resistance. osseointegration properties and neurologic disorder due to aluminium and vanadium, known as highly toxic elements, contained in Ti-6Al-4V. Newly developed titanium based alloys(Ti-20Zr-3Nb-3Ta-0.2Pd-1In, Ti-20Zr-3Nb-3Ta-0.2Pd) which do not contain toxic metallic components were designed by the Korea Institute of Science and Technology (KIST) with alloy design techniques using Zr, Nb, Ta, Pd, and In which are known as non-toxic elements. Biocompatibility and osseointegration properties of these newly designed alloys were evaluated after implantation in rabbit femur for 3 months. The conclusions were as follows : 1. Mechanical properties of the new designed Ti based alloys(Ti-20Zr-3Nb-3Ta-0.2Pd-1In, Ti-20Zr-3Nb-3Ta-0.2Pd) demonstrated close hardness and tensile strength values to Ti-6Al-4V. 2. New desinged experimental alloys showed stable corrosion resistance similar to the pure Ti but better than Ti-6Al-4V. However, the corrosion rate was higher for the new alloys. 3. Cell culture test showed that the new alloys have similar cell response compared with pure Ti and Ti-6Al-4V with no cell adverse reaction. 4. New designed alloys showed similar bone-metal contact ratio and osseointegration properties compared to pure Ti and Ti-6Al-4V after 3 months implantation in rabbit femur. 5. Four different surface treatments of the metals did not show any statistical difference of the cell growth and bone-metal contact ratio.

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