• Journal of the Korean Chemical Society
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• v.29 no.6
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• pp.599-607
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• 1985

Near-ir spectra have been obtained for the $ν_3$+ Amide II combination thioacetamide(TA) band in CC$l_4$ and TA-DMP in CC$l_4$ in the range of 5 to 55${\circ}C$. Absorbance of the weak bands of the DMP and solvent has been compensated. The spectra are analyzed by the computer resolution into two Lorentzian-Gaussian product bands which have been identified with monomeric TA and 1 : 1 TA-DMP complex. Equilibrium constants and thermodynamic parameters for the hydrogen bonding between TA and DMP have been evaluated by the analysis of the concentration and temperature dependent spectra for the very dilute CC$l_4$ solutions. The $ΔH{\circ} and ΔS{\circ}$ of TA and DMT have been found to be -14.6 kJmo$l^{-1}$ and -16.2 Jmo$l^{-1}$ de$g^{-1}$.

• The Journal of Advanced Prosthodontics
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• v.1 no.1
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• pp.56-61
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• 2009

STATEMENT OF PROBLEM. The success of titanium implants is due to osseointegration or the direct contact of the implant surface and bone without a fibrous connective tissue interface. PURPOSE. The purpose of this study was to evaluate the osteoblast precursor response to titanium-10 tantalum-10 niobium(Ti-Ta-Nb) alloy and its sputtered coating. MATERIAL AND METHODS. Ti-Ta-Nb coatings were sputtered onto the Ti-Ta-Nb disks. Ti6-Al-4V alloy disks were used as controls. An osteoblast precursor cell line, were used to evaluate the cell responses to the 3 groups. Cell attachment was measured using coulter counter and the cell morphology during attachment period was observed using fluorescent microscopy. Cell culture was performed at 4, 8, 12 and 16 days. RESULTS. The sputtered Ti-Ta-Nb coatings consisted of dense nanoscale grains in the range of 30 to 100 nm with alpha-Ti crystal structure. The Ti-Ta-Nb disks and its sputtered nanoscale coatings exhibited greater hydrophilicity and rougher surfaces compared to the Ti-6Al-4V disks. The sputtered nanoscale Ti-Ta-Nb coatings exhibited significantly greater cell attachment compared to Ti-6Al-4V and Ti-Ta-Nb disks. Nanoscale Ti-Ta-Nb coatings exhibited significantly greater ALP specific activity and total protein production compared to the other 2 groups CONCLUSIONS. It was concluded that nanoscale Ti-Ta-Nb coatings enhance cell adhesion. In addition, Ti-Ta-Nb alloy and its nanoscale coatings enhanced osteoblast differentiation, but did not support osteoblast precursor proliferation compared to Ti-6Al-4V. These results indicate that the new developed Ti-Ta-Nb alloy and its nanoscale Ti-Ta-Nb coatings may be useful as an implant material.

• Journal of Powder Materials
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• v.10 no.4
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• pp.255-261
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• 2003

Ultrafine TaC-5%Co composite powders were synthesized by spray conversion process using tantalum oxalate solution and cobalt nitrate hexahydrate(Co($(NO_3)_2$ . 6$H_2O$). The phase of Ta-Co oxide powders had amorphous structures after calcination below 50$0^{\circ}C$ and changed $Ta_2O_5$, $TaO_2$ and $CoTa_2O_6$ phase by heating above $600^{\circ}C$. The calcined Ta-Co oxide powders were spherical agglomerates consisted of ultrafine primary particles <50 nm in size. By carbothermal reaction, the TaC phase began to form from 90$0^{\circ}C$. The complete formation of TaC could be achieved at 105$0^{\circ}C$ for 6 hours. The observed size of TaC-Co composite powders by TEM was smaller than 200 nm.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1116-1117
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• 2006

Lanthanide tantalite $LnTaO_4$ (Ln= La, Nd, Sm, Dy, Er and Tm) was synthesized by a solid state reaction between mixed powders of $Ln_2O_3$ and $Ta_2O_5$. The single-phase $LnTaO_4$ was prepared by sintering at temperatures of 1423-1673 K in air. The SEM observation showed that the particles were provided with the growth steps and the depeloped facets. The photocatalytic activity for water splitting of $LnTaO_4$ prepared was measured under UV light irradiation. The activity obtained was higher than that previously reported. These results suggested the crystallinity of $LnTaO_4$ photocatalysts correlates closely with the efficiency of water splitting.

• Korean Journal of Materials Research
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• v.9 no.8
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• pp.837-842
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• 1999

The Ta/TaN multilayer structure with repeating layers of a poly-crystalline Ta layer of high ductility and a TaN layer of high hardness is expected to exhibit toughness. This paper reports the results on the hardness and the adhesion strength of Ta/TaN multilayers and compositional gradient Ta/TaN layers deposited on the high speed steel substrate by reactive sputtering as a function of annealing temperature. The TaN film deposited with the $N_2$/Ar ratio of 0.4 in the reactive sputtering process exhibits the highest crystallinity, and the highest hardness and the results of scratch test of the Ta/TaN multilayers. The hardness and adhesion strength of the Ta/TaN multilayers becomes deteriorated with increasing the annealing temperature in the heat treatment right after depositing the layers. Therefore, post-annealing treatments are not desirable in the case of the Ta/TaN multilayers from the standpoint of mechanical properties. Also the hardness of Ta/TaN multilayers increases with decreasing the compositional modulation wavelength, but the adhesion property of the layers is nearly independent of the wavelength. On the other hand, the compositional gradient Ta/TaN film exhibits the highest hardness and the value of scratch test for the post-annealing temperatures of 20$0^{\circ}C$ and 40$0^{\circ}C$, respectively. This tendency of the compositional gradient Ta/TaN films differs from that of the Ta/TaN multilayers.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1420-1421
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• 2006

In this study, structural and micowave dielectric properties of the $Mg_{5}B_{4}O_{15}$ (B=Ta, Nb) cation-deficient perovskite ceeramics. The specimens are prepared through the solid-state route. According to the XRD pattern, $Mg_{4}Ta_{2}O_9$ and $MgTa_{2}O_6$ phase exist in calcined and sintered $Mg_{5}Ta_{4}O_{15}$ powder. Also $Mg_{5}Ta_{4}O_{15}$ phase added with increasing sintering temperature. In the case of calcined and sintered $Mg_{5}Nb_{4}O_{15}$ powder, single phase of $Mg_{5}Nb_{4}O_{15}$ were appeared. The bulk density and quality factor of the $Mg_{5}B_{4}O_{15}$ (B=Ta, Nb) ceramics were increased with sinteming temperature in $1400^{\circ}C{\sim}1450^{\circ}C$, but these were decreased in another sintering temperature. Dielectric constant of the $Mg_{5}Ta_{4}O_{15}$ ceramics was increased continuously with increasing of sintering temperature. And the dielectric constant of the $Mg_{5}Nb_{4}O_{15}$ ceramics was increased in $1400^{\circ}C{\sim}1450^{\circ}C$ but decreased in $1475^{\circ}C$. In the case of the $Mg_{5}Ta_{4}O_{15}$ and $Mg_{5}Nb_{4}O_{15}$ ceramics sintered at $1450^{\circ}C$ for 5h, the dielectric constant, quality factor, and temperature coefficient of the resonant frequency (TCRF) were 8.2, 259,473 GHz, -10.91 $ppm/^{\circ}C$ and 14, 37,350 GHz, -52.3 $ppm/^{\circ}C$, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.1
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• pp.60-63
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• 1999

Application of reactive ion etching (RIE) technique to Ta-Al alloy thin film with a thickness of $1000{\AA}$ was studied. $CF_{4}$ gas could be used effectively to etch the Ta-Al alloy thin film. The etching rate in the thin film with Ta content of 50 mol% was about $67{\AA}/min$. NO selectivity between the Ta-Al alloy film and $SiO_{2}$ film was observed during the etching using the $CF_{4}$ gas. The etching rate of the $SiO_{2}$ layer was 12 times faster than that of the Ta-Al alloy thin film. It was also observed that photoresist of AZ5214 was more useful than Shiepley 1400-27 in RIE with the $CF_{4}$ gas.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.398-398
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• 2013

The electronic properties and the local structure of tantalum oxide thin film with variation of oxygen flow rate ranging from 9.5 to 16 sccm (standard cubic centimeters per minute) have been investigated by X-ray photoelectron spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and X-ray absorption spectroscopy (XAS). The XPS results show that the Ta4f spectrum for all films consist of the strong spin-orbit doublet $Ta4f_{7/2}$ and $Ta4f_{5/2}$ with splitting of 1.9 eV. The oxygen flow rate of the film results in the appearance of new features in the Ta4f at binding energies of 23.2 eV, 24.4 eV, 25.8, and 27.3 eV, these peaks attribute to $Ta^{1+}$, $Ta^{2+}$, $Ta^{4+}$/$Ta^{2+}$, and $Ta^{5+}$, respectively. Thus, the presence of non-stoichiometric state from tantalum oxide ($TaO_x$) thin films could be generated by the oxygen vacancies. The REELS spectra suggest the decrease of band gap for tantalum oxide thin films with increasing the oxygen flow rate. The absorption coefficient ${\mu}$ and its fine structure were extracted from the fluorescence mode of extended X-ray absorption fine structure (EXAFS) spectra. In addition, bond distances (r), coordination numbers (N) and Debye-Waller factors (${\sigma}^2$) each film were determined by a detailed of EXAFS data analysis. EXAFS spectrapresent both the increase of coordination number of the first Ta-O shell and a considerable reduction of the Ta-O bond distance with the increase of oxygen flow rate.

• Journal of the Korean Magnetics Society
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• v.6 no.3
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• pp.151-157
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• 1996

Magnetic properties and microstructures of FeTaNC thin films, which were deposited by magnetron reactive sputtering rrethod, were investigated as a function of $CH_{4}$ and $N_{2}$ gas partial pressures. Magnetic properties of FeTaNC films depended on total reactive gas pressure as well as $CH_{4}/N_{2}$ pressure ratios. For reactive gas partial pressures of 5~10 %, optimum magnetic properties were observed in the FeTaNC films with proper $CH_{4}/N_{2}$ ratio. On the other hand, at 15% of gas partial pressure, FeTaN and FeTaC films showed superior properties to FeTaNC films. Above 15%, the magnetic properties of films rapidly degraded due to an excess incorporation of C and/or N atoms. Excellent soft magnetic properties of 17 kG of Bs, 0.3 Oe of He, and 4000 of $\mu'$(at 5 MHz) were obtained in the FeTaNC films. High permeabilities of FeTaNC films could be explained by the Fe lattice distortion caused by N atoms, hence reduction of magnetic anisotopy. While precipitated TaN and TaC particles effectively supress the growth of $\alpha-Fe$ grains leading to a good soft magentic properties, FeN and FeC phases such as $Fe_3N$, $Fe_4N$, FexC have detrimental effects.

• Bulletin of the Korean Chemical Society
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• v.26 no.8
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• pp.1260-1264
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• 2005

Three new quaternary tantalum thiophosphates, $K_{0.18}TaPS_6,\;K_{0.28}TaPS_6,\;and\;Rb_{0.09}TaPS_6$ have been synthesized by using reactive alkali metal halide fluxes and structurally characterized by single crystal X-ray diffraction techniques. The crystal structures of $K_{0.18}TaPS_6,\;K_{0.28}TaPS_6,\;and\;Rb_{0.09}TaPS_6$ contain 3-dimensional open framework anions, $[TaPS_6]^{x-}$(x = 0.09, 0.18, 0.28) with the empty channel which disordered alkali metal cations, $K^+\;and\;Rb^+$ are located in. Crystal data: $K_{0.18}TaPS_6$, tetragonal, space group$I4_1$/acd (no. 142), a=15.874(3) $\AA$, c=13.146(4) $\AA$, V=3312.7(12) ${\AA}^3$, K, Z=16, R1=0.0545. Crystal data: $K_{0.28}TaPS_6$, tetragonal, space group $I4_1$/acd (no. 142), a=15.880(2) $\AA$, c=13.134(3) $\AA$, V=3312.1(10) ${\AA}^3$, Z=16, R1=0.0562. Crystal data: $Rb_{0.09}TaPS_6$, tetragonal, space group I41/acd (no. 142), a=15.893(3) $\AA$, c=13.163(4) $\AA$, V=3324.7(15) ${\AA}^3$, Z=16, R1=0.0432.