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An Effects of Enzymatic Browning Reaction Products of Potato on the Antimutagenesis

  • Ham, Seung-Shi;Park, Kun-Pyo;Park, Book-Kil;Deoghwan Oh
    • Preventive Nutrition and Food Science
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    • v.2 no.3
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    • pp.232-235
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    • 1997
  • This study was investigated to determine antimutagenic effects of enzymatic browning reaction products (PEBRPs) obtained by reaction of polyphenol compouns with oxidase extracted from potato. Catechol (Ca) PEBRPs showed the strongeest inhibitor effects with 90% inhibition on benzo-($\alpha$)-pyrene(B($\alpha$)P) induced mutagenesis in Salmonella typhimurium TA98, but he least with40% inhibition on the 2-aminofluorene (2-AF) induced mutagenesis in TA98. The strong antimutagenic activities with 80% inhibition were observed in the presence of 100$\mu\textrm{g}$/plate of hydroquinone(HQ)-PEBRP on the B($\alpha$)P or 3-amino-1,4-dimethyl-5H-pyrido[4,3-b]indole(Trp-P-1) induced mutagenesis in TA98, whereas HQ-PEBRP showed the least antimutagenic effect on 2-AF-induced mutagenesis. The addition of 100$\mu\textrm{g}$ hydroxyhydroquinone(HHQ)-PEBRP to the plate led to approximately 82% inhibitory effects on 2-AF or Trp-P-1 induced mutagenesis in TA98, whereas the least antimutagenicity was obsrved in the4-nitroquinoline-1-oxide(4-NQO) induced mutagenesis in the presence of 100$\mu\textrm{g}$/plate of HHQ-PEBRP. More than 80% inhibiton were observed in the presence of 200$\mu\textrm{g}$/plate of Pyrogalol(Py)-PEBRP on the B($\alpha$)P or Trp-P-1 induced mutagenesis in TA98, but the least with 38% inhibition on 4-NQO induced mutagenesis in TA98. The results indicate that enzymatic browing reaction products of potato have a strong modulatory effect on mutagen induced mutagenesis in TA98.

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Mutagenicity of residual pesticides using to cultivate the fruits and vegetables in the Salmonella typhimurium (과채류 재배에 사용되는 잔류성 농약의 돌연변이 유발성에 관한 연구)

  • Ko Yong-Gu
    • Journal of environmental and Sanitary engineering
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    • v.3 no.1 s.4
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    • pp.41-67
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    • 1988
  • Twelve residual pesticides which is applied mainly on the fruits and vegetables cultivation were tested for mutagenic activity using Salmonella typhimurium. The results were as follows. 1) The pesticides tested - Thalonil, Monopho, Tedion, Danoton, Ometon, Prosing, EPN, Phentoate, Parathion, 8appiran and Captan-, except Dicofol, showed mutagenic activity. Especially, the pesticides which activated with 8-9 mixture gave strong mutagenic activity. 2) With Salmonella typhimurium TA100, the pesticides Monopho, Parathion and Sappiran showed mutagenic activity at $0.5{\mu}g/plate;\;Ometon,\;0.01\; t.tl/plate;Thalonil,\;0.20{\mu}g/plate;\;Prosing,\; 0.20{\mu}l/plate;$ Tedion, Danoton and Phentoate, $1.0\;{\mu}l/plate;\;and\;Captan,\;1.0\;{\mu}g/plate.$ 3) With Salmonella typhimurium TA98, the pesticide Sappiran showed mutagenic activity at $0.02\;{\mu}g/plate;\;Thalonil,\;0.05\;{\mu}g/plate;\;EPN,\;0.05\;{\mu}/plate;\; Phentoate,\;0.10\; {\mu}l/plate;\;Danoton,\;0.50\;{\mu}l/plate;$ Prosing, $ 0.50\;{\mu}g/plate;\;and\;Tedion\;and\;Monopho,\;1.0\;{\mu}l/plate.$ 4) With Salmonella typhimurium TA1535, The pesticides Captan and Danoton showed mutagenic activity at $0.10\;{\mu}g/plate\;and\;0.20\;{\mu}g/plate,\;respectively.$ 5) With Salmonella typhimurium TA1538, The pestides Phentoate showed mutagenic activity at $0.05\;{\mu}l/plate;\;Monopho,\;0.10\;{\mu}l/plate;\;Thalonil,\;0.20 {\mu}g/plate;\;and\;Tedion\;and\;EPN,\;1.0\;{\mu}l/plate.$ 6) The pesticides which commonly showed high mutagenic activity were Thalonil, Phentoate, Parathion and Sappiran. The pesticides Ometon and EPN showed mutagenic activity at only TA100 and TA98, respectively.

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Potent Antimutagenic Activity of Caryophyllene Oxide for Aflatoxin $B_1\;(AFB_1)$ and 2-Amino-3-Methyl-imidazo[4,5-f]Quinoline (IQ) (Aflatoxin $B_1\;(AFB_1)$과 2-amino-3-methylimidazo[4,5-f]quinoline (IQ)에 대한 caryophyllene oxide의 항돌연변이성)

  • Lee, Jung-M.;Lee, Eun-J.;Bahn, Kyeong-N.;Kim, Jeong-O.;Ha, Yeong-L.
    • Applied Biological Chemistry
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    • v.38 no.5
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    • pp.468-472
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    • 1995
  • Substantial amount of caryophyllene oxide (CPO) is present in the essential oils of traditionally-used folk medicinal plants and herbal spices. The CPO, produced via chemical and/or enzymatic reaction of caryophyllene (CP), has largely being used as a flavoring component and exhibited a variety of biological activities. Now, we report the antimutagenic activity of CPO determined by Ames's preincubation test. S-9 fraction was prepared from the liver of rats treated with Arochor 1254. Anatoxin $B_1\;(AFB_1)$ and 2-amino-3-methylimidazo[4,5-f]quinoline (IQ) were used as mutagens. Reduction of mutagenicity of $AFB_1$ or IQ for S. typhimurium TA98 and TA100 by CPO was found to be a dose-dependant manner. CPO (500 ${\mu}g/plate$) reduced mutagenicity of AEB1 for S. typhimurium TA98 and TA100 to 89% and 71%, respectively. For IQ, similar results were observed against S. typhimurium TA98 and TA100, resulting in the inhibition percentage of 77% and 51%, respectively. CP also reduced mutagenicity of AEB1 and IQ for S. typhimurium TA98 and TA100, but the reduction rate was somewhat lowered relative to that of CPO. These results indicate that CPO could be developed as a potent antimutagenic flavoring agent.

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In-situ Synchrotron Radiation Photoemission Spectroscopy Study of Property Variation of Ta2O5 Film during the Atomic Layer Deposition

  • Lee, Seung Youb;Jeon, Cheolho;Kim, Seok Hwan;Lee, Jouhahn;Yun, Hyung Joong;Park, Soo Jeong;An, Ki-Seok;Park, Chong-Yun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.362-362
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    • 2014
  • Atomic layer deposition (ALD) can be regarded as a special variation of the chemical vapor deposition method for reducing film thickness. ALD is based on sequential self-limiting reactions from the gas phase to produce thin films and over-layers in the nanometer scale with perfect conformality and process controllability. These characteristics make ALD an important film deposition technique for nanoelectronics. Tantalum pentoxide ($Ta_2O_5$) has a number of applications in optics and electronics due to its superior properties, such as thermal and chemical stability, high refractive index (>2.0), low absorption in near-UV to IR regions, and high-k. In particular, the dielectric constant of amorphous $Ta_2O_5$ is typically close to 25. Accordingly, $Ta_2O_5$ has been extensively studied in various electronics such as metal oxide semiconductor field-effect transistors (FET), organic FET, dynamic random access memories (RAM), resistance RAM, etc. In this experiment, the variations of chemical and interfacial state during the growth of $Ta_2O_5$ films on the Si substrate by ALD was investigated using in-situ synchrotron radiation photoemission spectroscopy. A newly synthesized liquid precursor $Ta(N^tBu)(dmamp)_2$ Me was used as the metal precursor, with Ar as a purging gas and $H_2O$ as the oxidant source. The core-level spectra of Si 2p, Ta 4f, and O 1s revealed that Ta suboxide and Si dioxide were formed at the initial stages of $Ta_2O_5$ growth. However, the Ta suboxide states almost disappeared as the ALD cycles progressed. Consequently, the $Ta^{5+}$ state, which corresponds with the stoichiometric $Ta_2O_5$, only appeared after 4.0 cycles. Additionally, tantalum silicide was not detected at the interfacial states between $Ta_2O_5$ and Si. The measured valence band offset value between $Ta_2O_5$ and the Si substrate was 3.08 eV after 2.5 cycles.

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Characteristics of $Ta_{2}O_{5}$ Films by RF Reactive Sputtering (RF 반응성 스펏터링으로 제조한 $Ta_{2}O_{5}$ 막의 특성)

  • Park, Wug-Dong;Keum, Dong-Yeal;Kim, Ki-Wan;Choi, Kyu-Man
    • Journal of Sensor Science and Technology
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    • v.1 no.2
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    • pp.173-181
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    • 1992
  • Tantalum pentoxide($Ta_{2}O_{5}$) thin films on p-type (100) silicon wafer were fabricated by RF reactive sputtering. Physical properties and structure of the specimens were examined by XRD and AES. From the C-V analysis, the dielectric constant of $Ta_{2}O_{5}$ films was in the range of 10-12 in the reactive gas atmosphere in which 10% of oxygen gas is mixed. The ratio of Ta : 0 was 1 : 2 and 1 : 2.49 by AES and RBS examination, respectively. The heat-treatment at $700^{\circ}C$ in $O_{2}$ ambient led to induce crystallization. When the heat-treatment temperature was $1000^{\circ}C$, the dielectric constant was 20.5 in $O_{2}$ ambient and 23 in $N_{2}$ ambient, respectively. The crystal structure of $Ta_{2}O_{5}$ film was pseudo hexagonal of ${\delta}-Ta_{2}O_{5}$. The flat band voltage shift(${\Delta}V_{FB}$) of the specimens and the leakage current density were decreased for higher oxygen mixing ratio. The maximum breakdown field was 2.4MV/cm at the oxygen mixing ratio of 10%. The $Ta_{2}O_{5}$ films will be applicable to hydrogen ion sensitive film and gate oxide material for memory device.

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Evaluation of the Chemical Compositions of Solar Salts Produced in Korea (국내 시판 천일염의 성분 조사)

  • Seo, Ji-Hyun;Kim, Hyun-Jeong;Lee, Sam-Pin
    • Food Science and Preservation
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    • v.19 no.4
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    • pp.554-559
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    • 2012
  • To evaluate the effect of aging on solar salts produced in Korea, the chemical compositions of the solar salts, including their heavy metal contents, were analyzed after they were aged for one-year (OA) and for three years (TA). The average contents of the components were: sodium chloride; 81.4% (OA) and 90.9% (TA), chloride; 57.7% (OA) and 65.0% (TA), moisture content; 4.7% (TA) and 12.0% (OA), insoluble solids; 0.03% (OA) and 0.04% (TA), and $SO_4$ ions; and 0.57% (TA) and 0.85% (OA). No significant difference was found, however, in the heavy metal contents. Heavy metals such as As, Pb, and Hg were detected with values far below the maximum permissible limit, and Cd was not detected in the salts. The TA solar salts showed higher values of sodium chloride, chloride, and insoluble solids than the OA solar salts, but the TA solar salts had lower moisture and $SO_4$ values. These results clearly indicate that the levels of heavy metals in the OA and TA solar salts that are produced in Korea are safe.

The Effect of Additional Elements X on Magnetic Properties of CoCrTa/Cr-X Thin Film (CoCrTa/Cr-X 자성박막의 자기적성질에 미치는 첨가원소 X의 영향)

  • 김준학;박정용;남인탁;홍양기
    • Journal of the Korean Magnetics Society
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    • v.3 no.4
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    • pp.314-319
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    • 1993
  • The Effects of additional element X (X = Si, Mo, Cu, Gd) on magnetic properties and microstructure of Co-1Zat%Cr-Zat%Ta/Cr-X magnetic thin film were investigated. The thickness changes of Cr-X underlayer and CoCrTa magnetic layer were in the range of $1000~2000\AA$ and $200~800\AA$. respectively. Substrate temperatures were controlled from $100^{\circ}C$ to $200^{\circ}C$. Increase of coercivity by about 100~200 Oe was observed in CoCrTa/Cr-X thin films compared to those without additional X element. Cu was the most effective additional element for increasing coercivity. CoCrTa/Cr-Cu thin film shows relatively high coercivity in $1500\AA$ underlayer thickness and $600\AA$ magnetic layer thickness.

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The Etching Characteristics of the TaN Thin Films Using Inductively Coupled Plasma (유도 결합 플라즈마를 이용한 TaN 박막의 건식 식각 특성)

  • Li, Chen;Joo, Young-Hee;Woo, Jong-Chang;Kim, Han-Soo;Choi, Kyung-Rok;Kim, Chang-Il
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.1
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    • pp.1-5
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    • 2013
  • In this paper, we investigated the etching characteristics of the TaN thin films and the surface reaction of TaN thin films after etching process. The etching characteristics of the TaN thin films were carried out using inductively coupled plasma (ICP). The etch rate and the selectivity of TaN to $SiO_2$ and TaN to PR were measured by varying the gas mixing ratio, RF power, DC-bias voltage, and process pressure in CF-based plasma. The surface reaction of TaN thin films were determined by x-ray photoelectron spectroscopy (XPS).

PAALD 방법을 이용한 TaN 박막의 구리확산방지막 특성

  • 부성은;정우철;배남진;권용범;박세종;이정희
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2002.11a
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    • pp.14-19
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    • 2002
  • In this study, as Cu diffusion barrier, tantalum nitrides were successfully deposited on Si(100) substrate and SiO2 by plasma assisted atomic layer deposition(PAALD) and thermal ALD, using pentakis (ethylmethlyamino) tantalum (PEMAT) and $NH_3$ as precursors. The TaN films were deposited on $250^{\circ}$C by both method. The growth rates of TaN films were $0.8{\AA}$/cycle for PAALD and $0.75{\AA}$/cycle for thermal ALD. TaN films by PAALD showed good surface morphology and excellent step coverage for the trench with an aspect ratio of h/w - $1.8 : 0.12 \mu\textrm{m}$ but TaN films by thermal ALD showed bad step coverage for the same trench. The density for PAALD TaN was $11g/\textrm{cm}^3$ and one for thermal ALD TaN was $8.3g/\textrm{cm}^3$. TaN films had 3 atomic % carbon impurity and 4 atomic % oxygen impurity for PAALD and 12 atomic % carbon impurity and 9 atomic % oxygen impurity for thermal ALD. The barrier failure for Cu(200nm)/TaN(l0nm)/$SiO_2(85nm)$/Si structure was shown at temperature above $700^{\circ}$C by XRD, Cu etch pit analysis.

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Antimutagenic Effects of the Edible Mountain Herb Juices Against Trp-P-1 and 2-AF (Trp-P-1과 2-AF에 대한 산채류 생즙의 항돌연변이 효과)

  • 한규석;함승시;정의호;이해금
    • Journal of Food Hygiene and Safety
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    • v.7 no.4
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    • pp.161-168
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    • 1992
  • On the mutagenicity induced by 3-amino-l,4-dimethyl-5-H-pyrido[4,3-b]indol (Trp-P-1) and 2-aminotluorene (2-AF), the antimutagenic effects of edible muntain herb juices were examined by the Ames assay using Salmonella typhimurium TA98 and TA100. Juices prepared from aralia bud, small water dropwort, mugwort, roots of belltlower and sedum didn't have mutagenicity. Most of sample juices showed the antimutagenicity. Especially, juices prepared from aralia bud, small water dropwort and mugwort were found to possess strong antimutagenic effects. Sedum was moderatly effective and root of belltlower had little effect on mutagenicity caused by Trp-P1 and 2-AF. The experimental results with TA98 were similar to those with TA100 in the antimutagenicity test of edible mountain herb juices. In this study, antimutagenicity on Trp-P-1 was more effective than that on 2-AF.

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