• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.11
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• pp.35-43
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• 1995

To obtain high quality of $Ta_{2}O_{5}$ film, two dielectric layers of $Si_{3}N_{4}$ and $Ta_{2}O_{5}$ were subsequently formed on Si wafer. Silicon nitride films were thermally grown in 10 Torr ammonia ambient by R.F induced heating system. The thickness of thermally grown $Si_{3}N_{4}$ film was able to be controlled in the range of tens $\AA$ due to the self-limited growth property. $Ta_{2}O_{5}$ film of 200$\AA$ thickness was then deposited on the as-grown $Si_{3}N_{4}$ film about 25$\AA$ thickness by sputtering method and annealed at $900^{\circ}C$in $O_{2}$ ambient for 1hr. Stoichiometry film was prepared by the annealing in oxygen ambient. Despite the high temperature anneal process, silicon oxide layer was not grown at the interface of the layered films because of the oxidation barrier effect of Si$_{3}$N$_{4}$ film. The fabricated $Ta_{2}O_{5}$/$Si_{3}N_{4}$ film showed low leakage current less than several nA and high dielectric breakdown strength.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.84-87
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• 2000

The microwave dielectric properties of complex perovskite-structured $Ba(Mg_{1/3}Ta_{2/3})O_3$ ceramics were investigated with calcining condition. The BMT ceramics were prepared by conventional mixed oxide method. Calcining conditions were $1200^{\circ}C$ for 10hr., $1300^{\circ}C$ for 2hr., and 5hr., respectively. And the specimens were sintered at $1650{\mu}m$. The structural and microwave properties of BMT ceramics were investigated by XRD, SEM and network analyzer. In the case of BMT ceramics calcined at $1300^{\circ}C$ for 5 hr., dielectric constant, quality factor and temperature coefficient of resonant frequency were 20.26, 31,144(at 1GHz), 6.11[ppm/$^{\circ}C$], respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.6
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• pp.285-289
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• 2001

We investigated that each site was substituted by new chemical components in Langasite ($La_3Ga_5/SiO_{14}$)-type structure with superior piezoelectric characteristics than $La_3Ga_5/SiO_{14}$. In this study $Ca_3TaGa_5Si_{2}O_{14}$ was synthesized by soilid-state reaction and grown by the $\mu$-PD(micro-pilling-down)and Cz technique. Lattice parameter and chemical composition was investigated by XRD and EPMA respectively.

• Journal of the Korean Magnetics Society
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• v.14 no.6
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• pp.228-231
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• 2004

We have studied local magnetization reversal and magnetic properties induced by Laser annealing method in the strip-patterned Ta/NiFe/FeMn/Ta and Ta/NiFe/FeMn/NiFe/Ta multilayers fabricated by ion-beam deposition. The films were exposed to the emission of the DPSS (Diode Pumped Solid State, Nd:YAG) laser under 600 G. The laser beam intensity increased up to 440 mW. When the laser illuminated the patterned film with the power of above 200 m W, the intensity of MR peak located in +87 Oe shrunk. A new MR peak was generated at -63 Oe. When the laser power is 400 mW, the location of positive MR peak(H$\sub$ex/) was changed slightly from +87 Oe to +76 Oe, and the MR ratio was decreased from 0.9% to 0.1 %. On the other hand, the new (negative) MR peak shifted from -63 Oe to -80 Oe, with the MR ratio increased up to 0.3%. As the illuminated area expanded, the intensity of opposite MR peak increased and it of negative MR peak decreased. This proved that the local reversal of exchange biasing should be realized by laser annealing.

• Food Science and Preservation
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• v.11 no.1
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• pp.100-105
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• 2004

The objective of this study was carried out to investigate biological activities effects of Korean leaf from Rosa davurica Pall. in vitro. They were extracted with methanol, ethanol, chloroform and water. Methods of the antimutagenic used in this experiment were well-known bacterial short term tests which include Ames test and the antigenotoxic used in this experiment was DPPH radical scavenge. All extracts (ethanol, methanol, water) except chloroform extract exhibited 1,1-diphenyl-2-picrylhydrazyl (DPPH) radical scavenging activity with IC$\_$50/ of 11.5 $\mu\textrm{g}$/mL, 6.4 $\mu\textrm{g}$/mL, 4.8 $\mu\textrm{g}$/mL. In Ames test, most of extracts had strong antimutagenic effects against the mutagenesis induced by 4-nitroquinoline-1-oxide (4NQO), N-methyl-N’-nitro-N-nitrosoguanidine (MNNG), 3-amino-l,4-dimethyl-5H-pyrido[4,3-b]indol(Trp-P-I) and benzo(${\alpha}$)pyrene(B(${\alpha}$)P). The extracts of leaves (200 $\mu\textrm{g}$/plate) showed approximately 60∼80％ inhibitory effect on the mutagenesis induced by 4NQO, Trp-P-1 and B(${\alpha}$)P against TA98 strain, whereas 60∼80％ inhibition were observed on the mutagenesis induced by MNNG, 4NQO, Trp-P-1 and B(${\alpha}$)P against TA100 strain. respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.3
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• pp.297-303
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• 2024

In this study, KTN heterolayer thin films were fabricated by alternately stacking films of K(Ta_0.70Nb_0.30)O₃ and K(Ta_0.55Nb_0.45)O₃ synthesized using the sol-gel method. The sintering temperature and time were 750℃ and 1 hour, respectively. All specimens exhibited a polycrystalline pseudo-cubic crystal structure, with a lattice constant of approximately 0.398 nm. The average grain size was around 130~150 nm, indicating relatively uniform sizes regardless of the number of coatings. The average thickness of a single-coated film was approximately 70 nm. The phase transition temperature of the KTN heterolayer films was found to be approximately 8~12℃. Moreover, the 6-coated KTN heterolayer film displayed an excellent dielectric constant of about 11,000. As the number of coatings increased, and consequently the film thickness, the remanent polarization increased, while the coercive field decreased. The 6-coated KTN heterolayer film exhibited a remanent polarization and coercive field of 11.4 μC/cm² and 69.3 kV/cm at room temperature, respectively. ΔT showed the highest value at a temperature slightly above the Curie temperature, and for the 6-coated KTN heterolayer film, the ΔT and ΔT/ΔE were approximately 1.93 K and 0.128×10^-6 K·m/V around 40℃, respectively.

• Proceedings of the Materials Research Society of Korea Conference
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• 2008.05a
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• pp.11.1-11.1
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• 2008

• Bulletin of the Korean Chemical Society
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• v.18 no.11
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• pp.1210-1213
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• 1997

• Korean Journal of Soil Science and Fertilizer
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• v.21 no.1
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• pp.11-14
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• 1988

Field study was conducted to evaluate the relationship between daytime net radiation (Drn) and global solar radiation (Rs) and to develop the empirical equation predicting daytime net radiation above corn canopy from observations of Rs and Ta (mean daily air temperature). The relationship between Drn and Rs under the cloudless day was Drn = 0.6659Rs and that under the cloudy (> 35% of possible sunshine) Drn = 0.729Rs. Thus, Drn/Rs Ratio under cloudless day was found to be lower than that under the cloudy day. Rs and Ta were used in the radiation balance equation to estimate Drn and the empirical model could be expressed as $Drn=[0.9Rs-(352-227{\times}10^{-10}{\times}Ta^4)]$ [1.11Rs/Rso - 0.05].

• Journal of the Microelectronics and Packaging Society
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• v.11 no.4 s.33
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• pp.23-27
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• 2004

The $Al_xTa_{1-x} (x=0.0{\~}1.0)$ alloy thin films were deposited by RF-magnetron sputtering system, and the crystal quality, surface morphology, and electrical properties were examined using XRD, AFM, 4-point probe techniques in this study. The thin films were grown according to the alloy compositions first, and the effects of film thickness and mask patterns were investigated afterwards. Also, the heating characteristics were examined by heat controller. The obtained results showed that the high electrical resistivity was obtained for Al content $x=6.63at\%$, and the even higher resistivity was accomplished for the samples with smaller thickness and narrower width. The heating temperature demonstrated the identical trend to the electrical properties, and the highest heating temperature ($400^{\circ}C$) and output power ($12.6W/cm^2$) were obtained for the sample with Al content $x=6.63\%$, film thickness d=500 nm, film width w=1.5 mm.