• Title/Summary/Keyword: T-suprem4

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MEDICI와 SUPREM4를 이용한 폴리 실리콘 게이트의 벽면 기울기에 따른 NMOS 소자의 전기적 특성 분석

  • No, Ho-Seop;Kim, Jin-Su;Sin, Ju-Yong;Song, Han-Jeong;Lee, Je-Won
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2009.05a
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    • pp.20.1-20.1
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    • 2009
  • 반도체 소자 제조 공정 프로그램인 T-suprem4와 MEDICI를 이용하여 NMOS구조를 설계 하였다. MOS 소자 시뮬레이션을 통해 식각 공정에서 생기는 언더컷에 의한 전기적 특성을 I-V 곡선으로 비교하여 분석하였다. NMOS 구조는 반도체 소자 제조 공정 프로그램 T-suprem4를 이용하여 기본 소자 구조를 설계하였다. 실험의 변수로는 첫째, 소자 공정 중 폴리 실리콘의 언더컷 식각의 각도를 $70^{\circ}C$부터 $110^{\circ}C$까지 $10^{\circ}C$의 차이로 설계하였다. 또한, 언더컷에 의한 드레인-소스사이의 전류($I_{DS}$) 손실이 없는 유효한 각도를 확인하기 위해 $80^{\circ}C$부터 $100^{\circ}C$까지는 $2^{\circ}C$ 크기로 설계 하였다. 둘째, 게이트 크기를 축소하고 역시 언더컷 식각의 각도를 다양하게 설계하였다. 설계된 소자를 반도체 소자 특성 분석 프로그램 MEDICI를 이용하여 소자의 전기적 특성을 측정하였다. 우선 NMOS소자 게이트에 2V의 전압을 인가하였다. 그리고 드레인 부분에 전압을 인가하여 그에 따른 드레인의 전류를 측정 하였다. 드레인 전압은 0V 부터 변화시키며 인가하였다. 측정된 전류 값으로 I-V 곡선을 나타내었다. I-V 곡선의 분석을 통해 식각 후 언더컷의 각도가 $70^{\circ}C$, $80^{\circ}C$, $110^{\circ}C$ 일 때 $4\times10^{-8}A/{\mu}$의 전류가 흐르고, $90^{\circ}C$, $100^{\circ}C$ 일 때는 $1.8\times10^{-7}A/{\mu}$의 전류가 흐르는 것을 확인 하였다. $80^{\circ}C$에서 $100^{\circ}C$까지는 $2^{\circ}C$ 크기로 측정한 결과 $88^{\circ}C$에서 $100^{\circ}C$ 사이 일 때 $90^{\circ}C$ 각도의 경우와 같이 $1.8\times10^{-7}A/{\mu}$의 전류가 측정 되었다. 즉, 식각 중 수직 측벽 도에 언더컷이 $10^{\circ}C$이상 발생하면 $I_{DS}$ 전류 값이 약 22%로 감소하였다. 또한 일반적으로 $90^{\circ}C$의 수직측벽을 가지는 공정이 중요하다고만 생각 되었지만, 이번 연구를 통하여 식각 후 측벽의 각도가 $88^{\circ}C$에서 $92^{\circ}C$ 사이에 있을 때 $I_{DS}$ 값이 가장 최대가 되는 것을 확인 할 수 있었다.

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Investigations of Latch-up characteristics of CMOS well structure with STI technology (STI 기술을 채용한 CMOS well 구조에서의 Latch-up 특성 평가)

  • Kim, In-Soo;Kim, Chang-Duk;Kim, Jong-Chul;Kim, Jong-Kwan;Sung, Yung-Kwon
    • Proceedings of the KIEE Conference
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    • 1997.11a
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    • pp.339-341
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    • 1997
  • From this first studies, We have investigated the latch-up characteristics of various CMOS well structures possible with high energy ion implantation processes. In this study, we also investigated those of STI(Shallow Trench Isolation} structures with varing n+/p+ spacing and the depth of trench. STI structure is formed by T-SUPREM4 process simulator, and then latch-up simulations for each case were performed by MEDICI device simulator for latch-up immunity improvement. STI is very effective to preventing the degradation of latch-up characteristics as the n+/p+ spacing is reduced. These studies will allow us to evaluate each technology and suggest guidelines for the optimization of latch-up susceptibility.

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A study of electrical characteristic of MOSFET device (고에너지 이온주입에 따른 격자 결함 발생 및 거동에 관한 열처리 최적화방안에 관한 연구)

  • Song, Young-Doo;Kwack, Kae-Dal
    • Proceedings of the KIEE Conference
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    • 1999.07d
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    • pp.1830-1832
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    • 1999
  • 고에너지 이온주입(1)에 기인한 격자 손상 발생 및 열처리에 따라 이들의 회복이 어느정도 가능한지에 대하여 측정 및 분석방법을 통하여 조사하였다. 그리고 본 실험에서는 이온주입시 형성되는 빈자리 결함(Vacancy defect)과 격자간 결함(interstitial defect)의 재결할(recombination)을 이용 점결합(point defect)를 감소 시킬 수 있는 effective RTA조건을 설정하여 well 특성을 개선하고자 하였다. 8inch p-type Si(100)기판에 pad oxide 100A을 형성한 후 NMOS 형성하기 위해 vtn${\sim}$p-well과 PMOS 형성을 위해 vtp$\sim$n-well을 이온주입 하였다. Mev damage anneal은 RTA(2)(Rapid Thermal Anneal)로 $1000\sim1150C$ 온도에서 $15\sim60$초간 spilt 하여 실험후 suprem-4 simulation data를 이용하여 실제 SIMS측정 분석결과를 비교하였으며 이온주입에 의해 발생된 격자손상이 열처리후 damage 정도를 알아보기 위해 T.W(Therma-Wave)을 이용하였으며 열처리후 면저항값은 4-point probe를 사용하였다. 이온주입후 열처리 전,후에 따른 불순물 분포를 SIMS(Secondary ion Mass Spectrometry)를 이용하여 살펴보았다. SIMS 결과로는 열처리 온도 및 시간의 증가에 따라서 dopant확산 및 활성화는 큰차이는 보이지 않고 오히려 감소하는 경향을 볼 수 있으며 또한 접합깊이와 농도가 약간 낮아지는 것을 볼 수 있었다. 결점(defect)을 감소시키기 위해서 diffusivity가 빠른 임계온도영역($1150^{\circ}C$-60sec)에서 RTA를 실시하여 dopant확산을 억제하고 점결점(point defect)의 재결합(recombination)을 이용하여 전위 (dislocation)밀도를 감소시켜 이온주입 Damage 및 면저항을 감소 시켰다. 이와 같은 특성을 process simulation(3)(silvaco)을 통하여 비교검토 하였다.

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The Applicant's Liability of Examination of Document and Notification of the Discrepancies in Credit Transaction (신용장거래에 있어서 개설의뢰인의 서류심사 및 통지의무)

  • Park, Kyu-Young
    • International Commerce and Information Review
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    • v.8 no.4
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    • pp.105-121
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    • 2006
  • This study is related with the judgements of our country's supremcourt against the transaction of Letter of Credit which is beneficiary's fraudulent trade deal. In this case I think to analyse the judgements and to present the basic grounds on which the judgements were established. In Letter of Credit transaction, there are the major parties, such as, beneficiary, issuing bank, or confirming bank and the other parties such as applicant, negotiating bank, advising bank and paying bank. Therefore, in this cases, the beneficiary, the French Weapons' Supplier who did not shipped the commodities, created the false Bill of Lading, let his dealing bank make payment against the documents presented by him and received the proceeds from the negotiating bank or collecting bank, thereafter was bankrupted and escaped. For the first time, even though the issuing bank conceived that the presented documents were inconsistent with the terms of L/C. it did not received the payment approval from the applicant against all the discrepancies, made the negotiating bank pay the proceeds to exporter and thereafter, delivered the documents to the applicant long after the time of the issuing bank's examination of documents. The applicant who received the documents from the issuing bank, instantly did not examine the documents and inform to the issuing bank whether he accepted the documents or not. Long time after, applicant tried to clear the goods through custom when he knew the bill of ladings were false and founded out the documents had the other discrepancies which he did not approved. As the results, the applicant, Korea Army Transportation Command claimed, that the issuing bank must refund his paid amount because issuing bank examined the documents unreasonably according to u.c.p 500 Act 13th, 14th. In spite of the applicant's claim, the issuing bank argued that it paid the proceeds of L/C reasonably after receiving the applicant's approval of an discrepancy of document, the delayed shipment, but for concerning the other discrepancies, the trivial ones, the applicant did not examined the document and noticed the discrepancies in reasonable time. Therefore the applicant sued the issuing bank for refunding it's paid proceeds of L/C. Originally, this cases were risen between Korea Exchange Bank and Korea Army Transportation Command. As result of analysing the case, the contents of the case case have had same procedure actually, but the lower courts, the district and high courts all judged the issuing bank was reasonable and did not make an error. As analysing these supreme court's judgements, the problem is that whether there are the applicant's liability of examining the documents and informing its discrepancies to the issuing bank or not, and if the applicant broke such a liabilities, it lost the right of claiming the repayment from issuing bank. Finally to say, such applicant's liabilities only must be existed in case the documents arrived to the issuing bank was delivered to the applicant within the time of the documents examination according to u.c.p 500 Act 14, d. i. But if any the documents were delivered to applicant after time of the documents examination, the applicant had not such liabilities because eventhough after those time the applicant would have informed to the issuing bank the discrepancies of documents, the issuing bank couldn't receive repayment of its paid proceeds of document from the negotiating bank. In the result after time of issuing bank's examination of documents, it is considered that there's no actual benefit to ask the applicant practice it's liability. Therefore finally to say. I concluded that the Suprem Court's judgement was much more reasonable. In the following, the judgements of the supreme court would be analysed more concretely, the basic reasons of the results be explained and the way of protecting such L/C transaction would be presented.

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