• Proceedings of the Korea Information Processing Society Conference
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• 2017.04a
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• pp.201-202
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• 2017

정보통신 시스템이 나날이 발전하고 거대화되면서 해킹시도 또한 기하급수적으로 늘어나고 있다. 그러나 해킹 시도의 대다수는 성공으로 이어지지 않고, 단순의 탐색 경우가 대다수이다. 따라서 미수로 끝난 공격에서 공격 경로 및 공격 목표를 예측함으로써 추가적인 공격에 대비할 수 있는 시스템을 구축할 필요성이 있다. 그러므로 본 논문에서는 포렌식 분석, 해커의 문서, 보안 보고서 등을 토대로 공격 행위, 공격 결과 및 목표 등과 같은 공격 정보를 수집하고 공격트리를 만들어 레지스트리 정보, 프로세스 정보, 보안 로그 등과 같은 시스템 정보를 토대로 공격 목표를 찾는 시스템을 제안한다.

• Proceedings of the Korea Information Processing Society Conference
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• 2017.11a
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• pp.299-301
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• 2017

현대사회에서는 사이버 해킹 공격이 많이 일어나고 있다. 공격이 증가함에 따라 이를 다양한 방법으로 방어하고 탐지하는 연구가 많이 이루어지고 있다. 본 논문은 OpenIOC, STIX, MMDEF 등과 같은 공격자의 방법론 또는 증거를 식별하는 기술 특성 설명을 수집해 놓은 표현들을 기반을 머신러닝과 logstash라는 로그 수집기를 결합하는 새로운 시스템을 제안한다. 시스템은 pc에 공격이 가해졌을 때 로그 수집기를 사용하여 로그를 수집한 후에 로그의 속성 값들의 리스트를 가지고 머신러닝 알고리즘을 통해 학습시켜 분석을 진행한다. 향후에는 제안된 시스템을 실시간 처리 머신러닝 알고리즘을 사용하여 필요로그정보의 구성을 해주면 자동으로 로그정보를 수집하고 필터와 출력을 거쳐 학습을 시켜 자동 침입탐지시스템으로 발전할 수 있을 것이라 예상된다.

• Journal of Powder Materials
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• v.31 no.1
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• pp.50-56
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• 2024

We report the effect of plastic deformation on the thermoelectric properties of n-type Bi₂Te_2.5Se_0.5 compounds. N-type Bi₂Te_2.5Se_0.5 powders are synthesized by an oxide-reduction process and consolidated via spark-plasma sintering. To explore the effect of plastic deformation on the thermoelectric properties, the sintered bodies are subjected to uniaxial pressure to induce a controlled amount of compressive strains (-0.2, -0.3, and -0.4). The shaping temperature is set using a thermochemical analyzer, and the plastic deformation effect is assessed without altering the material composition through differential scanning calorimetry. This strategy is crucial because the conventional hot-forging process can often lead to alterations in material composition due to the high volatility of chalcogen elements. With increasing compressive strain, the (00l) planes become aligned in the direction perpendicular to the pressure axis. Furthermore, an increase in the carrier concentration is observed upon compressive plastic deformation, i.e., the donor-like effect of the plastic deformation in n-type Bi₂Te_2.5Se_0.5 compounds. Owing to the increased electrical conductivity through the preferred orientation and the donor-like effect, an improved ZT is achieved in n-type Bi₂Te_2.5Se_0.5 through the compressive-forming process.

• Convergence Security Journal
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• v.10 no.4
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• pp.39-48
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• 2010

In a complex, secure IT system environment there will be groups of data that be segregated from one another, yet reside on the same system. Users of the system will have varying degrees of access to specific data. The Configuration Management(CM) of the information architecture, the physical architecture, user privileges and application security policies increases the complexity for operations, maintenance and security staff. This pager describes(current work to merge the capabilities of a network CM toll with those of a Computer Aided System Engineering(CASE) tool. The rigour of Systems Engineering(SE) modelling techniques can be used to deal with the complexities of multi-level information security. The SE logical and physical models of the same system are readily tailorable to document the critical components of both the information architecture and physical architecture that needs to be managed. Linking a user-friendly, physical CM tool with the extended capabilities of a CASE tool provide the basis for improved configuration management of secure IT systems.

• 시스템엔지니어링워크숍
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• s.4
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• pp.108-112
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• 2004

The Smart UAV Program was motivated by a huge potential market, a various application and future core technologies. The Smart UAV system is defined as the advanced air vehicle with the smart technology such as collision awareness and avoidance, healthy monitering and self-recovering, intelligent active control. Due to the broad interest by government, industry and academia, Smart UAV development center and government steering committee were established. The organization of Smart UAV program consists of domestic/international companies and academia. in this paper, the process and application of system engineering was introduced for Smart UAV development program.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.5
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• pp.189-197
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• 2006

A stoichiometric mixture of evaporating materials for $AgGaSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy(HWE) system. The source and substrate temperatures were $630^{\circ}C\;and\;420^{\circ}C$, respectively. The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.9501eV-(8.79x10^{-4}eV/K)T^2(T+250K)$. After the as-grown $AgGaSe_2$ single crystal thin films was annealed in Ag-, Se-, and Ga-atmospheres, the origin of point defects of $AgGaSe_2$ single crystal thin films has been investigated by the photoluminescence (PL) at 10K. The native defects of $V_{Ag},\;V_{Se},\;Ag_{int},\;and\;Se_{int}$ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Ag-atmosphere converted $AgGaSe_2$ single crystal thin films to an optical p-type. Also, we confirmed that Ga in $AgGaSe_2$/GaAs did not form the native defects because Ga in $AgGaSe_2$ single crystal thin films existed in the form of stable bonds.

• Analytical Science and Technology
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• v.16 no.5
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• pp.399-406
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• 2003

This study was conducted to find out the analysis condition of selenium(Se) in oil refinery wastewater with a high concentration of Se using the atomic absorption spectrometry with hydride generation system (HG-AAS). From various experiments that reduced Se(VI) to Se(IV), the optimum pretreatment condition was determined to be a sample volume of 10 mL, HCl 10 mL, with a 30 min heating time in a water bath. In oil refinery wastewater, as the concentration of organics and constitution became higher, the recovery rates of Se decreased. Therefore, three acid digestion methods ($HNO_3/HClO_4$ digestion, $KMnO_4$ digestion, and microwave acid digestion) were tested on the recovery rates of Se in reference to the digestion of organics, petroleum and oxidation from organic Se(org.), Se(IV) to Se(VI). The experiment results showed that the average recovery rate of Se was the highest in microwave acid digestion, although all of the digestions were more than 90%. In consequence, the pretreatment procedure of microwave digestion followed by HCl addition was the most suitable for selenium analysis in oil refinery wastewater by using HG-AAS.

• Journal of Electrical Engineering and Technology
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• v.12 no.3
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• pp.996-1006
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• 2017

Phasor Measurement Unit (PMU) placement is a crucial problem for State Estimation (SE) of the power system, which can ensure that the power network is fully observed. Further, the observation reliability problem of the system has been concerned in the operation conditions. In this paper, based on modified weighted adjacent matrix ($A_w$), an optimal placement method is proposed to solve simultaneously two problems involving the optimal PMU placement problem and the observation reliability enhancement problem of the system. The purpose of the proposed method is to achieve both the minimum total cost and the maximum observation reliability, with a focus on increasing the security of observability, strengthening the observation reliability of buses as well as enhancing the effectiveness of redundancy. Simulations on IEEE 14, 24, 30 and 57 bus test systems are presented to justify the methodology. The results of this study show that the proposed method is not only ensuring the power network having the observability effectively but also enhancing significantly the observation reliability. Therefore, it can be a useful tool for SE of the power system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.85-86
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• 2006

Single crystal $AgGaSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_2$ source at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=19501 eV-(879{\times}10^{-4} eV/K)T^2/(T+250 K)$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.96-97
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• 2008

Single crystal $AgGaSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at 420 $^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_2$ source at 630 $^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $AgGaSe_2$ thin films measured with Hall effect by van def Pauw method are $9.24\times10^{16}cm^{-3}$ and 295 $cm^2/V{\cdot}s$ at 293 K, respectively.