• 제목/요약/키워드: Synthesis gas

검색결과 870건 처리시간 0.027초

메탄 대향류 확산화염내 수소를 첨가한 탄소나노물질 합성에 관한 연구 (Study on synthesis of carbon nanomaterials by hydrogen mixing in counterflow methane diffusion flames)

  • 신우중;최정식;윤석훈;이현식;최재혁
    • 한국마린엔지니어링학회:학술대회논문집
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    • 한국마린엔지니어링학회 2011년도 후기공동학술대회 논문집
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    • pp.88-89
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    • 2011
  • The study on synthesis of carbon nanomaterials by H2 mixing in counterflow methane diffusion flames has been experimentally conducted. We have also investigated on effect of catalyst and temperature in flame. The counterflow flame was formed by many kind of gas (fuel side using $CH_4-H_2-N_2$ and oxidizer side $N_2-O_2$) and nitrogen shields discharge on each other side to cut off oxidizer of the atmosphere. Ferrocene was used as a metal catalyst for CNTs synthesis. substrate was used to deposit carbon nanomaterials and these were analyzed by FE-SEM. We could find that carbon nanotubes and many kind of carbon nano materials were formed in Cu wire substrate, through this experiment.

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합성절차에 따른 1차원 ZnO 나노구조의 형태조절과 특성평가 (Shape Control and Characterization of One-dimensional ZnO Nanostructures through the Synthesis Procedure)

  • 공보현;박태은;조형균
    • 한국전기전자재료학회논문지
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    • 제19권1호
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    • pp.13-17
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    • 2006
  • The one-dimensional ZnO nanostructures prepared through thermal evaporation under various cooling down procedures by changing the flow rates of the carrier gas and the reactive gas were investigated. The nanorod structures were changed into the nanonail types with a broad head through the reduction of the flow rate of the carrier gas. The decrease of the reactive gas reduced the length of the nail heads due to the limited mass transport of reactive gas. The intensity ratio of the ultraviolet emission/green emission of photoluminescence was proportional to the length of the broad head showing a larger surface area. The vertically aligned nanostructures were grown along the [0001] direction of ZnO regardless of the aligned directions. The crystal direction of the nanostructures was determined by that of the initial ZnO crystal.

가스-입자 동시주입법에 의한 A356/SiCp 복합재료의 제조 및 기계적 특성 (Fabrication and Mechanical Properties of A356/SiCp Manufactured by Gas-Particle Co-injection Method)

  • 이정무;강석봉;엄칠용;임차용
    • 한국주조공학회지
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    • 제21권1호
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    • pp.33-40
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    • 2001
  • Among the many techniques available to synthesis metal matrix composites, liquid phase processing, especially, conventional casting process such as stir-casting process is particularly attractive for their simplicity, economy and flexibility, In the present study, A356/20%SiCp composites were fabricated by gas-particle co-injection method. The gas-particle co-injection method is a modified stir-casting method and the corporation of particle could be improved by acceleration of particles due to rotation of impeller and gas purging. The microstructures and mechanical properties such as tensile properties and resistance to wear of fabricated materials were examined. Further, the particle injection mechanism in gas-particle co-injection method was discussed.

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Synthesis and Characterization of Tin Nitride Thin Films Deposited by Low Nitrogen Gas Ratio

  • 박주연;강용철
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.173.2-173.2
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    • 2014
  • Thin nitride thin films were synthesized by reactive radio-frequency magnetron sputtering in the ultra high vacuum (UHV) chamber. To control the characteristics of thin films, tin nitride thin films were obtained various argon and nitrogen gas mixtures, especially low nitrogen gas ratios. Tin nitride thin films were analyzed with alpha step, scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and 4 point probe measurement. The result of alpha step and SEM showed that the thickness of thin nitride thin films were decreased with increasing nitrogen gas ratios. The metallic tin structure was decreased and the amorphous tin nitride structure were observed by XRD with higher nitrogen gas ratios. The oxidation state of tin and nitride were studied with high resolution Sn 3d and N 1s XP spectra.

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EFFECT OF SUBSTRATE BIAS ON THE DIAMOND GROWTH USING MICROWAVE PLASMA CVD

  • Sakamoto, Yukihiro;Takaya, Matsufumi
    • 한국표면공학회지
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    • 제32권3호
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    • pp.303-306
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    • 1999
  • On the effect of substrate bias at first stage of diamond synthesis at lower substrate temperature(approximately 673K) using microwave plasma CVD and effect of reaction gas system for the bias enhanced nucleation were studied. The reaction gas was mixture of methane and hydrogen or carbon monoxide and hydrogen. The nucleation density of applied bias -150V using $CH_4-H_2$ reaction gas system, significantly higher than that of $C-H_2$ reaction gas system. When the $CH_4-H_2$ reaction was used, nucleation density was increased because of existence of SiC as a interface for diamond nucleation. By use of this negative bias effect for fabrication of CVD diamond film using two-step diamond growth without pre-treatment, fabrication of the diamond film consist of diamond grains $0.2\mu\textrm{m}$ in diameter was demonstrated

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수소생산 공정에서의 이산화탄소 포집 (CO2 Capture from the Hydrogen Production Processes)

  • 홍연기
    • 융복합기술연구소 논문집
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    • 제12권1호
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    • pp.19-23
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    • 2022
  • Interest in hydrogen production to respond to climate change is increasing. Until now, hydrogen has been mainly produced through the SMR (Steam Methane Reforming) process using natural gas. A large amount of CO2 is emitted in the hydrogen production process through SMR, and the gas flow including CO2 generated in the SMR process has different characteristics for each emission source, so it is important to apply a suitable CO2 capture process. In the case of PSA tail gas or synthesis gas, the applicability of an amine-based process has been confirmed or demonstrated close to a commercial level. However, in the case of the flue gas generated from the reformer, it is still difficult to apply the conventional amine-based process because the partial pressure of CO2 is relatively low. Energy-saving innovative absorbents such as phase separation absorbents can be a solution to these difficulties.

Synthesis of Graphene on Hexagonal Boron Nitride by Low Pressure Chemical Vapor

  • Han, Jae-Hyun;Yeo, Jong-Souk
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.391-392
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    • 2012
  • Graphene is a perfectly two-dimensional (2D) atomic crystal which consists of sp2 bonded carbon atoms like a honeycomb lattice. With its unique structure, graphene provides outstanding electrical, mechanical, and optical properties, thus enabling wide variety of applications including a strong potential to extend the technology beyond the conventional Si based electronic materials. Currently, the widespread application for electrostatically switchable devices is limited by its characteristic of zero-energy gap and complex process in its synthesis. Several groups have investigated nanoribbon, strained, or nanomeshed graphenes to induce a band gap. Among various techniques to synthesize graphene, chemical vapor deposition (CVD) is suited to make relatively large scale growth of graphene layers. Direct growth of graphene on hexagonal boron nitride (h-BN) using CVD has gained much attention as the atomically smooth surface, relatively small lattice mismatch (~1.7%) of h-BN provides good quality graphene with high mobility. In addition, induced band gap of graphene on h-BN has been demonstrated to a meaningful value about ~0.5 eV.[1] In this paper, we report the synthesis of grpahene / h-BN bilayer in a chemical vapor deposition (CVD) process by controlling the gas flux ratio and deposition rate with temperature. The h-BN (99.99%) substrate, pure Ar as carrier gas, and $CH_4$ are used to grow graphene. The number of graphene layer grown on the h-BN tends to be proportional to growth time and $CH_4$ gas flow rate. Epitaxially grown graphene on h-BN are characterized by scanning electron microscopy, atomic force microscopy, and Raman spectroscopy.

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니켈 담지촉매의 니켈 담지량에 따른 활성 변화 (Activity Changes of Supported Nickel Catalysts with Respect to Ni Loading)

  • 김상범;박은석;천한진;김영국;김명수;박홍수;함현식
    • 한국응용과학기술학회지
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    • 제20권3호
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    • pp.230-236
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    • 2003
  • Synthesis gas is commercially produced by a steam reforming process. However, the process is highly endothermic and energy-consuming. Thus, this study was conducted to produce synthesis gas by the partial oxidation of methane to decrease the energy cost. Supported Ni catalysts were prepared by the impregnation method. To examine the activity of the catalysts, a differential fixed bed reactor was used, and the reaction was carried out at $750{\sim}850^{\circ}C$ and 1 atm. The fresh and used catalysts were characterized by XRD, XPS, TGA and AAS. The highest catalytic activity was obtained with the 13wt% Ni/MgO catalyst, with which methane conversion was 81%, and $H_2$ and CO selectivities were 94% and 93%, respectively. 13wt% Ni/MgO catalyst showed the best $MgNiO_2$ solid solution state, which can explain the highest catalytic activity of the 13wt% Ni/MgO catalyst.

니켈담지촉매에서 합성가스 제조시 La 조촉매의 영향 (Effect of La Promoter in the Production of Synthesis Gas over Supported Ni Catalysts)

  • 황재영;김영국;임연수;박홍수;함현식
    • 한국응용과학기술학회지
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    • 제21권1호
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    • pp.89-96
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    • 2004
  • The effect of La promoter on the carbon deposition and catalytic activity in the synthesis gas production with supported Ni catalysts was investigated. Active component was Ni and support was $CeO_2$ and the promoter used was La. The reaction was carried out in a fixed bed reactor at 1 atm and $650{\sim}800^{\circ}C$. The catalysts were prepared by two methods, the impregnation method and urea method. The catalysts prepared by the urea method showed 10 times higher surface area than those of prepared by the impregnation method. By the introduction of La promoter in the catalyst system, carbon deposition was remarkably reduced from 16% to 2%. It appears that the promoter facilitates the formation of a stable fluoride-type phase, which reduces the carbon deposition. The best catalytic activity and CO and $H_2$ selectivities were obtained with 2.5wt% $Ni/Ce(La)O_x$ catalyst at $750^{\circ}C$, giving 90% methane conversion, 93 and.80% of CO and $H_2$ selectivities, respectively.