• 한국진공학회:학술대회논문집
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• 한국진공학회 2002년도 제23회 학술발표회 초록집
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• pp.183-184
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• 2002

• Applied Microscopy
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• 제45권3호
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• pp.115-118
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• 2015

In this review paper, I'd like to introduce the basics of angle-resolved photoemission spectroscopy (ARPES) and some of my results taken at the Pohang Accelerator Laboratory (PAL), the only synchrotron radiation in South Korea. The results show that ARPES is very useful, in particular, for studying two-dimensional materials. It looks like a microscope in momentum space similar to transmission electron microscope imaging atoms in real space.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.619-619
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• 2013

The interfacial state between $Ta_2O_5$ and a Si substrate during the growth of $Ta_2O_5$ films by atomic layer deposition (ALD) was investigated using in-situ synchrotron radiation photoemission spectroscopy (SRPES). A newly synthesized liquid precursor Ta($N^tBu$) $(dmamp)_2Me$ was used as the metal precursor, with Ar as a purging gas and $H_2O$ as the oxidant source. After each half reaction cycle, samples were analyzed using in-situ SRPES under ultrahigh vacuum at room temperature. SRPES analysis revealed that Ta suboxide and Si dioxide were formed at the initial stages of $Ta_2O_5$ growth. However, the Ta suboxide states almostdisappeared as the ALD cycles progressed. Consequently, the $Ta^{5+}$ state, which corresponds with the stoichiometric $Ta_2O_5$, only appeared after 4.0 cycles. Additionally, tantalum silicate was not detected at the interfacial states between $Ta_2O_5$ and Si. The measured valence band offset between $Ta_2O_5$ and the Si substrate was 3.22 eV after 3.0 cycles.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.283.2-283.2
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• 2013

The variation of chemical and interfacial state during the growth of Ta2O5 films on the Si substrate by atomic layer deposition (ALD) was investigated using in-situ synchrotron radiation photoemission spectroscopy. A newly synthesized liquid precursor Ta(NtBu)(dmamp)2Me was used as the metal precursor, with Ar as a purging gas and H2O as the oxidant source. The core-level spectra of Si 2p, Ta 4f, and O 1s revealed that Ta suboxide and Si dioxide were formed at the initial stages of Ta2O5 growth. However, the Ta suboxide states almost disappeared as the ALD cycles progressed. Consequently, the Ta5+ state, which corresponds with the stoichiometric Ta2O5, only appeared after 4.0 cycles. Additionally, tantalum silicate was not detected at the interfacial states between Ta2O5 and Si. The measured valence band offset value between Ta2O5 and the Si substrate was 3.08 eV after 2.5 cycles.

• Journal of Magnetics
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• 제8권4호
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• pp.149-152
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• 2003

The electronic structure of Mn12-Ac molecular magnet has been investigated using synchrotron radiation. The valence-band photoemission spectroscopy (PES) measurement reveals that Mn 3d states are located near the top of the valence band. The trend in the measured valence-band PES spectra is found to be consistent with that in the calculated local density of states. The Mn 2p x-ray absorption spectroscopy (XAS) measurement provides evidence for the Mn$^{3+}$-Mn$^{4+}$ mixed-valent states.

• 한국전기전자재료학회논문지
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• 제23권7호
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• pp.550-553
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• 2010

The enhancement of quantum efficiency using a surface modified Ag anode in top-emitting organic light emitting diodes (TEOLEDs) is reported. The operation voltage at the current density of $1\;mA/cm^2$ of TEOLEDs decreased from 9.3 V to 4.3 V as the surface of anode coated with $CuO_x$ layer. The work function of these structures were quantitatively determined using synchrotron radiation photoemission spectroscopy. Secondary electron emission spectra revealed that the work function of the Ag/$CuO_x$ structure is higher by 0.6 eV than that of Ag. Thus, the $CuO_x$ structure acts as a role in reducing the hole injection barrier by about 0.6 eV, resulting in a decrease of the turn-on voltage of top-emitting light emitting diodes.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.114.2-114.2
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• 2014

The orientation of the constituent molecules in organic thin film devices can affect significantly their performance due to the highly anisotropic nature of ${\pi}$-conjugated molecules. We report here an angle dependent x-ray absorption study of the control of such molecular orientation using well-ordered interlayers for the case of a bilayer heterojunction of chloroaluminum phthalocyanine (ClAlPc) and C60. Furthermore, the orientation-dependent energy level alignment of the same bilayer heterojunction has been measured in detail using synchrotron radiation-excited photoelectron spectroscopy. Regardless of the orientation of the organic interlayer, we find that the subsequent ClAlPc tilt angle improves the ${\pi}-{\pi}$ interaction at the interface, thus leading to an improved short-circuit current in photovoltaic devices based on ClAlPc/C60. The use of the interlayers does not change the effective band gap at the ClAlPc/C60 heterointerface, resulting in no change in open-circuit voltage.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.567-567
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• 2012

Since the carbon nanotubes (CNTs) have extraordinary material properties, many researchers are trying to make a practical application in various fields [1]. In particular, the high surface area of CNTs was fascinated for nano-template on the catalytic system. $RuO_2$ coated CNTs are useful functional nano-composites in many applications, including super capacitors, fuel cells, biosensors, and field emitters. However, the research of interaction between CNTs and $RuO_2$ was not satisfied with various fields [2]. In this study, we will introduce the change of chemical and electrical state of $RuO_2$/CNTs at different temperatures by synchrotron radiation photoemission spectroscopy (SRPES). The t-MWCNTs used in this experiment were grown on the Ni/TiN/Si substrates by chemical vapor deposition. $RuO_2$ of 4-20 nm in thickness was deposited on the t-MWNTs by sputter. The SRPES measurements were carried out at the 4B1 beamline of the Pohang Accelerator Laboratory in Korea. The result of XPS measurement indicates that the deposited $RuO_2$ on the CNTs was reduced into pure Ru at above $300^{\circ}C$. And we confirmed that the effective work function of $RuO_2$/CNTs was decreased with increasing temperature.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.362-362
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• 2014

Atomic layer deposition (ALD) can be regarded as a special variation of the chemical vapor deposition method for reducing film thickness. ALD is based on sequential self-limiting reactions from the gas phase to produce thin films and over-layers in the nanometer scale with perfect conformality and process controllability. These characteristics make ALD an important film deposition technique for nanoelectronics. Tantalum pentoxide ($Ta_2O_5$) has a number of applications in optics and electronics due to its superior properties, such as thermal and chemical stability, high refractive index (>2.0), low absorption in near-UV to IR regions, and high-k. In particular, the dielectric constant of amorphous $Ta_2O_5$ is typically close to 25. Accordingly, $Ta_2O_5$ has been extensively studied in various electronics such as metal oxide semiconductor field-effect transistors (FET), organic FET, dynamic random access memories (RAM), resistance RAM, etc. In this experiment, the variations of chemical and interfacial state during the growth of $Ta_2O_5$ films on the Si substrate by ALD was investigated using in-situ synchrotron radiation photoemission spectroscopy. A newly synthesized liquid precursor $Ta(N^tBu)(dmamp)_2$ Me was used as the metal precursor, with Ar as a purging gas and $H_2O$ as the oxidant source. The core-level spectra of Si 2p, Ta 4f, and O 1s revealed that Ta suboxide and Si dioxide were formed at the initial stages of $Ta_2O_5$ growth. However, the Ta suboxide states almost disappeared as the ALD cycles progressed. Consequently, the $Ta^{5+}$ state, which corresponds with the stoichiometric $Ta_2O_5$, only appeared after 4.0 cycles. Additionally, tantalum silicide was not detected at the interfacial states between $Ta_2O_5$ and Si. The measured valence band offset value between $Ta_2O_5$ and the Si substrate was 3.08 eV after 2.5 cycles.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.40-40
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• 2010

Employing synchrotron radiation based photoemission spectroscopy (PES) and scanning tunneling microscopy (STM), our group have investigated Si surfaces, various graphenes and molecular nanolayers. In this talk, I introduce recent results on the surface related systems. All experiments have been performed at the surface science beamlines, 3A2 and 7B1, in Pohang Accelerator Laboratory, where high resolution PES (HRPES) and angle resolved PES (ARPES) are available. Metals or molecules are adsorbed and sometimes extreme ultraviolet is irradiated onto surfaces to give them special functions. I show several examples for surface functionalzation and how to characterize solid surface using the analysis techniques. In particular, lots of ARPES and STM data are provided from graphenes, a strong candidate for replacing Si and conducting oxide currently used in many electronic and optical devices.