• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.825-829
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• 1993

By using the state plane approach, the steady state analysis and desing of a high frequency LLC-type series resonant converter and LLC-type parallel resonant converter operating in the continuous conduction mode is presented. When a LLC-type P.R.C operates above resonant frequency, the switching transitor can be turn off at zero voltage. A set of characteristic frequency are plotted from which desing parameters can be obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.104-108
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• 2005

We have studied electrode-optic characteristics of IPS (in-plane switching) mode with electrode on top substrate. Because the IPS mode does not have electrode on top substrate. it shows not only slow response time due to weak electric field but also slow discharging problem when electrostatic field is generated after fabricating the cell. To solve these problems. we have formed additional electrode including dielectric layer in the inner part of the cell and studied electrode-optic characteristics of new IPS cell by changing thickness of dielectric layer.

• Convergence Security Journal
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• v.12 no.1
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• pp.35-42
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• 2012

Increase of data traffic and the advent of new real-time services require to change from the traditional TDM-based (Time Division Multiplexing) networks to the optical networks that soft and dynamic configuration. Voice and lease line services are main service area of the traditional TDM-based networks. This optical network became main infrastructure that offer many channel that can convey data, video, and voice. To provide high resilience against failures, Packet-optical networks must have an ability to maintain an acceptable level of service during network failures. Fast and resource optimized lightpath restoration strategies are urgent requirements for the near future Packet-optical networks with a Generalized Multi-Protocol Label Switching(GMPLS) control plane. The goal of this paper is to provide packet-optical network with a hierarchical multi-layer recovery in order to fast and coordinated restoration in packet-optical network/GMPLS, focusing on new implementation information. The proposed schemes do not need an extension of optical network signaling (routing) protocols for support.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.186-186
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• 2009

Most liquid crystal display modes, including the twisted nematic (TN) $mode^1$, the in-plane switching (IPS) $mode^2$, the fringe field switching (FFS) $mode^3$, and the vertically aligned (VA) $mode^4$ are based on either a horizontal or a vertical alignment. However, for some applications, such as no-bias-bend (NBB) pi cell or bistable bend-splay display, an intermediate pretilt angle is essential$^5$. NBB pi cells have been a focus of interest because of their fast response time; however, the reliable control of the intermediate pretilt angle of liquid crystals that is required for the fabrication of NBB pi cells is challenging. The controllable pre-tilt angle of liquid crystals was investigated using a blend of horizontal and vertical polyimide prepared by a rubbing method. Various pretilt angles in the range from 0^{\circ}$ to 90^{\circ}$ were achieved as a function of the vertical polyimide content. We observed uniform liquid crystal alignment on the rubbing-treated blended polyimide layer. A NBB pi cell with an intermediate pretilt angle of 47.8^{\circ}$ was manufactured. This cell had no initial bias voltage and a low threshold voltage, which indicates that it has low power consumption. In addition, the response time of the NBB pi cell was rapid.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.295-296
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• 2009

There are various application of liquid crystal materials to devices, especially, blue phase liquid crystal (BPLC) and nano-structured liquid crystal mixture have been studied recently because BPs existing temperature range has been expanded by polymer-stabilization and liquid crystal has been confined in room which has certain coherence length so that their particular characters, such as fast response time and optically isotropic state at no electric field, could apply to advanced liquid crystal display devices. However, there is an crucial problem which is high operating voltage from low Kerr constant and limited electric field utilization using in-plain electric field. In this paper, we will analyze cell structure in the way of using electric field and show effective electric field utilization to reduce operating voltage.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.4
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• pp.772-779
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• 2015

In this paper,a reconfigurable multi-band mobile antenna with switching line for LTE band 13, GSM, K-PCS, WCDMA band. The proposed antenna is planar strip line design and composed of stub shorted to the ground plane and two switching line for proposed band operation. To obtain the optimized parameters, we used the simulator, Using the obtained parameters is fabricated. The numerical and experiment results demonstrated that the proposed antenna satisfied the -6 dB impedance bandwidth requirement while simultaneously covering when the state of sw1 and sw2 on for LTE band 13, the state of sw1 off and sw2 on for GSM, K-PCS, the state of sw1 off and sw2 off for WCDMA. Respectively and characteristics of gain and radiation patterns are determined for a reconfigurable multi-band mobile terminal.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.276-276
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• 2010

Large-area micropatterned array of Co/Ni bilayer anti-dots was fabricated using photolithography and wet etching process. The surface morphology as well as the surface topography was checked by scanning electron microscopy and atomic force microscopy, whereas the magnetic properties were studied by magneto-optical Kerr effect (MOKE) and magnetic force microscopy (MFM). Systematic studies of the magnetic-reversal mechanism, the in-plane anisotropy and the switching field properties were carried out. To get a comprehensive knowledge about the domain configuration, we also employed OOMMF simulations. It was found from the MOKE measurements that a combined effect of configurational and the magneto-crystalline anisotropy simultaneously works in such micropatterned bilayer structures. In addition, the inclusion of holes in the uniform magnetic film drastically affected the switching field. The MFM images show well-defined domain structures which are periodic in nature. The micromagnetic simulations indicate that the magnetization reversal of such a structure proceeds by formation and annihilation of domain walls, which were equally manifested by the field-dependent MFM images. The observed changes in the magnetic properties are strongly related to both the patterning that hinders the domain-wall motion and to the magneto-anisotropic bilayered structure.

• Journal of the Korean Society for Railway
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• v.18 no.2
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• pp.105-110
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• 2015

This paper presents a $4{\times}1$ beam-forming reader antenna system for a new type of RFID based train position detection technology. The required beamwidth of the reader antenna is analytically expressed for different train speeds. The proposed antenna system consists of four rectangular patch elements and two switching couplers which are designed, without any impedance matching networks, for two different antenna modes. The switching coupler is a rectangular quadrature coupler with Pin diodes connecting its center line and the ground plane. The beamwidth of the antenna when the diodes are off and on is $18^{\circ}$ and $39^{\circ}$, respectively. The proposed antenna system will be used for a real train test in the near future.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.4 s.95
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• pp.397-401
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• 2005

In this paper, a slot-coupled microstrip antenna with switchable polarization is proposed for the polarization diversity applications in the complicated communication environment. The proposed antenna is fed by a microstrip line through one of two slots located with the interval of $\lambda{g}/4$ in the ground plane. By switching the PIN diode between opened and shorted termination which is located at the tip of the microstrip line, the switching function between horizontal and vertical polarization was confirmed experimentally. The measured resonant frequencies of the fabricated antenna are $2.41\;\cal{GHz}\;2.40\;\cal{GHz}$ and the cross polarization levels are $19\;\cal{dB},\;23\;\cal{dB},\;the\;-10\;\cal{dB}$ return loss bandwidths are $95\;\cal{MHz}\;100\;\cal{MHz}$ in horizontal and vertical polarization, respectively, and the antenna gain is almost $6\;\cal{dBi}$.

• Journal of the Korean Ceramic Society
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• v.43 no.11 s.294
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• pp.688-692
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• 2006

Ferroelectric lanthanides-substituted $Bi_4Ti_3O_{12}$ $(Bi_{4-x}Ln_xTi_3O_{12}, BLnT)$ thin films approximately 200 nm in thickness were deposited by metal organic chemical vapor deposition onto Pt(111)/Ti/SiO$_2$/Si(100) substrates. Many researchers reported that the lanthanides substitution for Bi in the pseudo-perovskite layer caused the distortion of TiO$_6$ octahedron in the a-b plane accompanied with a shift of the octahedron along the a-axis. In this study, the effect of lanthanides (Ln=Pr, Eu, Gd, Dy)-substitution and crystallization temperature on their ferroelectric properties of bismuth titanate $(Bi_4Ti_3O_{12}, BIT)$ thin films were investigated. As BLnT thin films were substituted to lanthanide elements (Pr, Eu, Gd, Dy) with a smaller ionic radius, the remnant polarization (2P$_r$) values had a tendency to increase and made an exception of the Eu-substituted case because $Bi_{4-x}Eu_xTi_3O_{12}$ (BET) thin films had the smaller grain sizes than the others. In this study, we confirmed that better ferroelectric properties can be expected for films composed of larger grains in bismuth layered peroskite materials. The crystallinity of the thin films was improved and the average grain size increased as the crystallization temperature,increased from 600 to 720$^{\circ}C$. Moreover, the BLnT thin film capacitor is characterized by well-saturated polarization-electric field (P-E) curves with an increase in annealing temperature. The BLnT thin films exhibited no significant degradation of switching charge for at least up to $1.0\times10^{11}$ switching cycles at a frequency of 1 MHz. From these results, we can suggest that the BLnT thin films are the suitable dielectric materials for ferroelectric random access memory applications.