• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.8
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• pp.18-25
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• 2020

With the development of water internet technology, data communication between objects is expanding. Research related to data communication technology between vehicles that incorporates related technologies into vehicles has been actively conducted. For data communication between mobile terminals, data stability, reliability, and real-time performance must be guaranteed. The 5 GHz Wi-Fi band, which is advantageous in bandwidth, communications speed, and wireless saturation of the wireless network, was selected as the data communications network between vehicles. This study analyzes how to design and implement a 5 GHz Wi-Fi network in a vehicle network. Considering the characteristics of the mobile communication terminal device, a continuous variable communications structure is proposed to enable high-speed data switching. We simplify the access point access procedure to reduce the latency between wireless terminals. By limiting the Transmission Control Protocol Internet Protocol (TCP/IP)-based Dynamic Host Configuration Protocol (DHCP) server function and implementing it in a broadcast transmission protocol method, communication delay between terminal devices is improved. Compared to the general commercial Wi-Fi communication method, the connection operation and response speed have been improved by five seconds or more. Utilizing this method can be applied to various types of event data communication between vehicles. It can also be extended to wireless data-based intelligent road networks and systems for autonomous driving.

• Journal of the Korean Academy of Esthetic Dentistry
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• v.22 no.1
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• pp.22-29
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• 2013

In general, to conduct aesthetic restorations, various analyses are carried out using a camera from the initial examination with the final prosthesis in consideration. With the reality that many dentists are using digital cameras, it can be considered that the time of digital impression has already started. Just as the recent general trend is that more and more internationally renowned photographers are switching their film cameras to digital counterparts, it is likely that CAD/CAM will show another direction in the area of the aesthetic dentistry that we may want to pursue. With the word 'digital', the convenience and economics often come to mind in the first place. However, from the dental clinical viewpoint, it is important to improve and develop the CAD/CAM system based on understanding its specialty and superiority while respecting the conventional analog techniques. However, a regretful aspect is that it is often difficult to catch up with the latest advancements for proper referencing and follow-up of digital technologies since the CAD/CAM device and material are developing very rapidly. Accordingly, although it is ideal to have hands-on experiences in various digital material and devices, and adapt to their fast changes, it must be stressed that the clinical application is to be implemented on the basis of the proven traditional way of dental clinics in order to obtain better outcomes. This presentation will explore types of approaches that can be made by combining the traditional techniques and the CAD/CAM from the aesthetic viewpoint. In addition, it is hoped and eagerly awaited that the CAD/CAM restoration may play a significant role in the field of the 'digital art'.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.9
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• pp.987-994
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• 2010

In this paper, a simple and effective active load-pull method is proposed, and the method to improve the efficiency of X-band power amplifier using harmonic control circuit is presented. The proposed active load-pull system mainly consists of directional coupler, phase shifter, short circuit, and power amplifier, and allows a user to access reflection coefficients near the edge of the Smith chart($\Gamma$=1) easily. The device used in this paper is Mitsubishi's GaAs FET MGF1801, and the operating frequency of the power amplifier is 9 GHz, The amplifier had output power of 21.65 dBm and drain efficiency of 24.9 % at class-A, and had output power of 21.46 dBm and drain efficiency of 53.3 % at class-AB. Harmonic control circuit is designed only second and third harmonic components because of the bandwidth limitation of the microwave components. The drain efficiency is improved as much as 6.4 % compared with class-AB power amplifier.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.27-27
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• 2011

For the design of real applicable molecular devices, current-voltage properties through molecular nanostructures such as metal-molecule-metal junctions (molecular junctions) have been studied extensively. In thiolate monolayers on the gold electrode, the chemical bonding of sulfur to gold and the van der Waals interactions between the alkyl chains of neighboring molecules are important factors in the formation of well-defined monolayers and in the control of the electron transport rate. Charge transport through the molecular junctions depends significantly on the energy levels of molecules relative to the Fermi levels of the contacts and the electronic structure of the molecule. It is important to understand the interfacial electron transport in accordance with the increased film thickness of alkyl chains that are known as an insulating layer, but are required for molecular device fabrication. Thiol-tethered RuII terpyridine complexes were synthesized for a voltage-driven molecular switch and used to understand the switch-on mechanism of the molecular switches of single metal complexes in the solid-state molecular junction in a vacuum. Electrochemical voltammetry and current-voltage (I-V) characteristics are measured to elucidate electron transport processes in the bistable conducting states of single molecular junctions of a molecular switch, Ru(II) terpyridine complexes. (1) On the basis of the Ru-centered electrochemical reaction data, the electron transport rate increases in the mixed self-assembled monolayer (SAM) of Ru(II) terpyridine complexes, indicating strong electronic coupling between the redox center and the substrate, along the molecules. (2) In a low-conducting state before switch-on, I-V characteristics are fitted to a direct tunneling model, and the estimated tunneling decay constant across the Ru(II) terpyridine complex is found to be smaller than that of alkanethiol. (3) The threshold voltages for the switch-on from low- to high-conducting states are identical, corresponding to the electron affinity of the molecules. (4) A high-conducting state after switch-on remains in the reverse voltage sweep, and a linear relationship of the current to the voltage is obtained. These results reveal electron transport paths via the redox centers of the Ru(II) terpyridine complexes, a molecular switch.

• Journal of the Korean Electrochemical Society
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• v.2 no.1
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• pp.17-22
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• 1999

Since the use of porous silicon for microsensors and microactuators is in the euly stage of study, only several application devices, such as light-emitting diodes and chemical sensors have so far been demonstrated. In this paper we present an overview of the present status of porous silicon sensors and actuators research with special emphasis on the applications of chemical sensors and optical devices. The capacitive type porous silicon humidity sensors had a nonlinear capacitance-humidity characteristic and a good sensitivity at higher humidity above $40\%RH$. The porous silicon $n^+-p-n^+$ device showed a sharp increase in current when exposed to an ethanol vapor. The $p^+-PSi-n^+$ diode fabricated on porous silicon diaphragm exhibited an optical switching characteristic, opening up its utility as an optical sensor or switch. The photoluminescence (PL) spectrum, taken from porous silicon under 365 nm excitation, had a broad emission, peaked at -610 nm. The electroluminescence(EL) from ITO/PSi/In LED had a broader spectrum with a blue shifted peak at around 535nm than that of the PL.

• Journal of the Korean Society of Marine Environment & Safety
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• v.21 no.6
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• pp.759-769
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• 2015

Diode rectifiers are very popular in industry. However, they include large low-order harmonics in the input current and do not satisfy harmonic current content restrictions. To reduce the harmonics to the power system, several methods have been introduced. It is heavy and expensive solution to use passive filters as the solution for high power application. Another solution for the harmonic filter is utilization of active filter, but it is too expensive solution. Diode rectifiers with configurations using switching device have been introduced, but they are very complicated. The combined 12-pulse diode rectifier with the square auxiliary voltage supply has been introduced. It has the advantages that auxiliary circuit is simple and inexpensive compared to other strategies. The advanced auxiliary voltage supply in this thesis is presented as a new solution. When the square auxiliary voltage supply applied, the improvement of THD is 6~60[%] in whole load range. But when the advanced auxiliary voltage supply applied, it shows stable and excellent reduction effect of THD as 57~71[%]. Especially, for the case with 10[%] load factor, reduction effect of THD has little effect as 6[%] in the case of inserting a square auxiliary voltage supply. But when the proposed new solution applied, reduction effect has excellent effect as 71[%]. Theoretical analysis of the combined 12-pulse diode rectifier with the advanced auxiliary voltage supply is presented and control methods of the auxiliary supply is proposed. The reduction in the input current harmonics is verified by simulation using software PSIM.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.183-184
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• 2013

Two main MBE growth techniques have been used: plasma-assisted MBE (PA-MBE), which utilizes a rf plasma to supply active nitrogen, and ammonia MBE, in which nitrogen is supplied by pyrolysis of NH3 on the sample surface during growth. PA-MBE is typically performed under metal-rich growth conditions, which results in the formation of gallium droplets on the sample surface and a narrow range of conditions for optimal growth. In contrast, high-quality GaN films can be grown by ammonia MBE under an excess nitrogen flux, which in principle should result in improved device uniformity due to the elimination of droplets and wider range of stable growth conditions. A drawback of ammonia MBE, on the other hand, is a serious memory effect of NH3 condensed on the cryo-panels and the vicinity of heaters, which ruins the control of critical growth stages, i.e. the native oxide desorption and the surface reconstruction, and the accurate control of V/III ratio, especially in the initial stage of seed layer growth. In this paper, we demonstrate that the reliable and reproducible growth of GaN on Si (110) substrates is successfully achieved by combining two MBE growth technologies using rf plasma and ammonia and setting a proper growth protocol. Samples were grown in a MBE system equipped with both a nitrogen rf plasma source (SVT) and an ammonia source. The ammonia gas purity was ＞99.9999% and further purified by using a getter filter. The custom-made injector designed to focus the ammonia flux onto the substrate was used for the gas delivery, while aluminum and gallium were provided via conventional effusion cells. The growth sequence to minimize the residual ammonia and subsequent memory effects is the following: (1) Native oxides are desorbed at $750^{\circ}C$ (Fig. (a) for [$1^-10$] and [001] azimuth) (2) 40 nm thick AlN is first grown using nitrogen rf plasma source at $900^{\circ}C$ nder the optimized condition to maintain the layer by layer growth of AlN buffer layer and slightly Al-rich condition. (Fig. (b)) (3) After switching to ammonia source, GaN growth is initiated with different V/III ratio and temperature conditions. A streaky RHEED pattern with an appearance of a weak ($2{\times}2$) reconstruction characteristic of Ga-polarity is observed all along the growth of subsequent GaN layer under optimized conditions. (Fig. (c)) The structural properties as well as dislocation densities as a function of growth conditions have been investigated using symmetrical and asymmetrical x-ray rocking curves. The electrical characteristics as a function of buffer and GaN layer growth conditions as well as the growth sequence will be also discussed. Figure: (a) RHEED pattern after oxide desorption (b) after 40 nm thick AlN growth using nitrogen rf plasma source and (c) after 600 nm thick GaN growth using ammonia source for (upper) [110] and (lower) [001] azimuth.

• The KIPS Transactions:PartD
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• v.15D no.6
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• pp.755-766
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• 2008

Recently, NAND flash memory is becoming into the spotlight as a next-generation storage device because of its small size, fast speed, low power consumption, and etc. compared to the hard disk. However, due to the distinct characteristics such as erase-before-write architecture, asymmetric operation speed and unit, disk-based systems and applications may result in severe performance degradation when directly implementing them on NAND flash memory. Especially when a B-tree is implemented on NAND flash memory, intensive overwrite operations may be caused by record inserting, deleting, and reorganizing. These may result in severe performance degradation. Although ${\mu}$-tree has been proposed in order to overcome this problem, it suffers from frequent node split and rapid increment of its height. In this paper, we propose Log-Structured B-Tree(LSB-Tree) where the corresponding log node to a leaf node is allocated for update operation and then the modified data in the log node is stored at only one write operation. LSB-tree reduces additional write operations by deferring the change of parent nodes. Also, it reduces the write operation by switching a log node to a new leaf node when inserting the data sequentially by the key order. Finally, we show that LSB-tree yields a better performance on NAND flash memory by comparing it to ${\mu}$-tree through various experiments.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.9
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• pp.73-80
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• 2004

In this paper, we present the cell resequencing buffer to solve the cell sequence integrity problem of the Cyclic banyan network that is a high-performance fault-tolerant cell switch. By offering multiple paths between input ports and output ports, using the deflection self-routing, the Cyclic banyan switch offer high reliability, and it also solves congestion problem for the internal links of the switch. By the way, these multiple paths can be different lengths for each other. Therefore, the cells departing from an identical source port and arriving at an identical destination port can reach to the output port as the order that is different from the order arriving at input port. The proposed cell resequencing buffer is a hardware sliding window mechanism. to solve such cell sequence integrity problem. To calculate the size of sliding window that cause the prime cost of the presented device, we analyzed the distribution of the cell delay through the simulation analyses under traffic load that have a nonuniform address distribution that express tile Property of traffic of the Internet. Through these analyses, we found out that we can make a cell resequencing buffer by which the cell sequence integrity is to be secured, by using a, few of ordinary memory and control logic. The cell resequencing buffer presented in this paper can be used for other multiple paths switching networks.

• Journal of the Korean Vacuum Society
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• v.14 no.4
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• pp.207-214
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• 2005

This paper presents a channel structure for promising high performance pseudomorphic high electron mobility transistor(pHEMT) switching device for design and fabricating of microwave control circuits, such as switches, phase shifters, attenuators, limiters, for application in personal mobile communication systems. Using the designed epitaxial channel layer structure and ETRI's $0.5\mu$m pHEMT switch process, single pole double throw (SPDT) Tx/Rx monolithic microwave integrated circuit (MMIC) switch was fabricated for 2.4 GHz and 5 GHz band wireless local area network (WLAN) systems. The SPDT switch exhibits a low insertion loss of 0.849 dB, high isolation of 32.638 dB, return loss of 11.006 dB, power transfer capability of 25dBm, and 3rd order intercept point of 42dBm at frequency of 5.8GHz and control voltage of 0/-3V These performances are enough for an application to 5 GHz band WLAN systems.