• Journal of Electrical Engineering and Technology
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• v.9 no.2
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• pp.686-694
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• 2014

A power semiconductor device, usually used as a switch or rectifier, is very significant in the modern power industry. The power semiconductor, in terms of its physical properties, requires a high breakdown voltage to turn off, a low on-state resistance to reduce static loss, and a fast switching speed to reduce dynamic loss. Among those parameters, the breakdown voltage and on-state resistance rely on the doping concentration of the drift region in the power semiconductor, this effect can be more important for a higher voltage device. Although the low doping concentration in the drift region increases the breakdown voltage, the on-state resistance that is increased along with it makes the static loss characteristic deteriorate. On the other hand, although the high doping concentration in the drift region reduces on-state resistance, the breakdown voltage is decreased, which limits the scope of its applications. This addresses the fact that breakdown voltage and on-state resistance are in a trade-off relationship with a parameter of the doping concentration in the drift region. Such a trade-off relationship is a hindrance to the development of power semiconductor devices that have idealistic characteristics. In this study, a novel structure is proposed for the Insulated Gate Bipolar Transistor (IGBT) device that uses conductivity modulation, which makes it possible to increase the breakdown voltage without changing the on-state resistance through use of a P-floating layer. More specifically in the proposed IGBT structure, a P-floating layer was inserted into the drift region, which results in an alleviation of the trade-off relationship between the on-state resistance and the breakdown voltage. The increase of breakdown voltage in the proposed IGBT structure has been analyzed both theoretically and through simulations, and it is verified through measurement of actual samples.

• Journal of the Korean Society of Marine Environment & Safety
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• v.23 no.6
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• pp.739-745
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• 2017

Many studies have been conducted to reduce environmental pollution by ships and reduce fuel consumption. As part of this effort, research on power conversion systems through DC distribution systems that link renewable energy with conventional power grids has been pursued as well. The diode rectifiers currently used include many lower harmonics in the input current of the load and distort supply voltage to lower the power quality of the whole system. This distortion of voltage waveforms causes the malfunctions of generators, load devices and inverter pole switching elements, resulting in a large number of switching losses. In this paper, a controller is presented to improve DC output waveforms, the input Power Factor and the THD of an AFE type PWM rectifier used for PLL. DC output voltage waveforms have been improved, and the input Power Factor can now be matched to the unit power factor. In addition, the THD of the input power supply has been proven by simulation to comply with the requirements of IEEE Std514-2014.