• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.135-136
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• 2006

Bismuth titanate ($Bi_4Ti_3O_{12}$, BIT) thin film has been studied intensively in the past decade due to its large remanent polarization, low crystallization temperature, and high Curie temperature. Substitution of various trivalent rare-earth cations (such as $La^{3+}$, $Nd^{3+}$, $Sm^{3+}$ and $Pr^{3+}$) in the BIT structure is known to improve its ferroelectric properties, such as remanent polarization and fatigue characteristics. Among them, neodymuim-substituted bismuth titanate, ((Bi, Nd)$_4Ti_3O_{12}$, BNT) has been receiving much attention due to its larger ferroelectricity. In this study, Ferroelectric $Bi_{3.3}Nd_{0.7}Ti_3O_{12}$ thin films were successfully fabricated by liquid delivery MOCVD process onto Pt(111)/Ti/$SiO_2$/Si(l00) substrates. Fabricated polycrystailine BNT thin films were found to be random orientations, which were confirmed by X-ray diffraction and scanning electron microscope analyses. The remanent polarization of these films increased with increase in annealing temperature. And the film also demonstrated fatigue-free behavior up to $10^{11}$ read/write switching cycles. These results indicate that the randomly oriented BNT thin film is a promising candidate among ferroelectric materials useful for lead-free nonvolatile ferroelectric random access memory applications.

• Journal of Power Electronics
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• v.18 no.2
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• pp.558-572
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• 2018

In addition to its modular nature, a Hybrid Modular Multilevel Converter (HMMC) assembled from half-bridge and full-bridge sub-modules, is able to block DC faults with a minimum number of switching devices, which makes it attractive for high power applications. This paper introduces a control strategy based on the Root-Least Square (RLS) algorithm to estimate the capacitor voltages instead of using direct measurements. This action eliminates the need for voltage transducers in the HMMC sub-modules and the associated communication link with the central controller. In addition to capacitor voltage balancing and suppression of circulating currents, a fault tolerant control unit (FTCU) is integrated into the proposed strategy to modify the parameters of the HMMC controller. On advantage of the proposed FTCU is that it does not need extra components. Furthermore, a fault detection unit is adapted by utilizing a hybrid estimation scheme to detect sub-module faults. The behavior of the suggested technique is assessed using PSCAD offline simulations. In addition, it is validated using a real-time digital simulator connected to a real time controller under various normal and fault conditions. The proposed strategy shows robust performance in terms of accuracy and time response since it succeeds in stabilizing the HMMC under faults.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.818-821
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• 2006

We demonstrate the vertical alignment of liquid crystal on $a-SiO_x$ film surface using the ion beam exposure. Liquid crystal can be aligned vertically by the rotational oblique evaporation of $a-SiO_x$ film. However, the electro-optic switching behavior of liquid crystal along random directions results in disclination lines. We found that we can achieve highly uniform alignment of liquid crystal without disclination lines by using the ion beam exposure. We found from XRD and XPS data that the vertical alignment can be achieved when x approaches 1.5 at the $a-SiO_x$ film surface. We have shown that the pretilt angle can be controlled by changing ion beam parameters, such as the ion beam energy, the angle of incidence, and the exposure time. We found that whether liquid crystals can be aligned vertically or homogeneously on $a-SiO_x$ film can be predicted simply by measuring the change in optical transmittance by deposition of $a-SiO_x$ thin film layers. We also have shown that a liquid crystal cell aligned vertically by the ion beam exposure exhibits the voltage-transmittance curve similar to that of a rubbed polyimide cell.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.624-627
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• 2003

The BLT thin-films were one of the promising ferroelectric materials with a good leakage current and degradation behavior on Pt electrode. The BLT target was sintered at $1100^{\circ}C$ for 4 hours at the air ambient. $Bi_{3.25}La_{0.75}Ti_3O_{12}$ (BLT) thin-film deposited on $Pt/Ti/SIO_2/Si$ wafer by rf magnetron sputtering method. At annealed $700^{\circ}C$, (117) and (006) peaks appeared the high intensity. The hysteresis loop of the BLT thin films showed that the remanent polarization ($2Pr=Pr^+-Pr^-$) was $16uC/cm^2$ and leakage current density was $1.8{\times}10^{-9}A/cm^2$ at 50 kV/cm with coersive electric field when BLT thin-films were annealed at $700^{\circ}C$. Also, the thin film showed fatigue property at least up to $10^{10}$ switching bipolar pulse cycles under 7 V. Therefore, we induce access to optimum fabrication condition of memory device application by rf-magnetron sputtering method in this report.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.132-132
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• 2011

For the programming volume of PRAM, Ge2Sb2Te5(GST) thin films have been dominantly used and prepared by physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD). Among these methods, ALD is particularly considered as the most promising technique for the integration of PRAM because the ALD offers a superior conformality to PVD and CVD methods and a digital thickness control precisely to the atomic level since the film is deposited one atomic layer at a time. Meanwhile, although the IST has been already known as an optical data storage material, recently, it is known that the IST benefits multistate switching behavior, meaning that the IST-PRAM can be used for mutli-level coding, which is quite different and unique performance compared with the GST-PRAM. Therefore, it is necessary to investigate a possibility of the IST materials for the application of PRAM. So far there are many attempts to deposit the IST with MOCVD and PVD. However, it has not been reported that the IST can be deposited with the ALD method since the ALD reaction mechanism of metal organic precursors and the deposition parameters related with the ALD window are rarely known. Therefore, the main aim of this work is to demonstrate the ALD process for IST films with various precursors and the conformal filling of a nano size programming volume structure with the ALD?IST film for the integration. InSbTe (IST) thin films were deposited by ALD method with different precursors and deposition parameters and demonstrated conformal filling of the nano size programmable volume of cell structure for the integration of phase change random access memory (PRAM). The deposition rate and incubation time are 1.98 A/cycle and 25 cycle, respectively. The complete filling of nano size volume will be useful to fabricate the bottom contact type PRAM.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.353-353
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• 2011

Titanium dioxide is a suitable material for industrial use at present and in the future because titanium dioxide has efficient photoactivity, good stability and low cost [1]. Among the three phases (anatase, rutile, brookite) of titanium dioxide, the anatase form is particularly photocatalytically active under ultraviolet (UV) light. In fabrication of photocatalytic devices based on catalytic nanodiodes [2], it is challenging to obtain a photocatalytically active TiO2 thin film that can be prepared at low temperature (< 200$^{\circ}C$). Here, we present the synthesis of a titanium dioxide film using TiO2 nanoparticles and sol-gel methods. Titanium tetra-isopropoxide was used as the precursor and alcohol as the solvent. Titanium dioxide thin films were made using spin coating. The change of atomic structure was monitored after heating the thin film at 200$^{\circ}C$ and at 350$^{\circ}C$. The prepared samples have been characterized by X-ray diffraction (XRD), scanning electron microcopy, X-ray photoelectron spectroscopy, transmission electron microscopy, ultraviolet-visible spectroscopy (UV-vis), and ellipsometry. XRD spectra show an anatase phase at low temperature, 200$^{\circ}C$. UV-vis confirms the anatase phase band gap energy (3.2 eV) when using the photocatalyst. TEM images reveal crystallization of the titanium dioxide at 200$^{\circ}C$. We will discuss the switching behavior of the Pt /sol-gel TiO2 /Pt layers that can be a new type of resistive random-access memory.

• Macromolecular Research
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• v.17 no.7
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• pp.491-498
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• 2009

New $\pi$-conjugated multi-branched molecules were synthesized through the Homer-Emmons reaction using alkyl-substituted, 3,4-ethylenedioxythiophene-based, thiophenyl aldehydes and octaethyl benzene-l,2,4,5-tetrayltetrakis(methylene) tetraphosphonate as the core unit; these molecules have all been fully characterized. The two multi-branched conjugated molecules exhibited excellent solubility in common organic solvents and good self-film forming properties. The semiconducting properties of these multi-branched molecules were also evaluated in organic field-effect transistors (OFET). With octyltrichlorosilane (OTS) treatment of the surface of the $SiO_2$ gate insulator, two of the crystalline conjugated molecules, 7 and 8, exhibited carrier mobilities as high as $2.4({\pm}0.5){\times}10^{-3}$ and $1.3({\pm}0.5){\times}10^{-3}cm^2V^{-1}s^{-1}$, respectively. The mobility enhancement of OFET by light irradiation ($\lambda$ = 436 nm) supported the promising photo-controlled switching behavior for the drain current of the device.

• The Journal of the Korea Contents Association
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• v.10 no.12
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• pp.243-253
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• 2010

The competition for telecommunication-broadcasting bundle is under full steam. Even large mobile OS companies like Apple and Google are showing signs of moving into the telecom and broadcasting industry, and it is expected that competition for bundle will become even fiercer. In the light of this situation, this study will show which factors can heighten purchasing intention for bundle and lower expected-discounting rates, seeking its answer in the quality, satisfaction, and brand loyalty to core product. The results of the study show that the brand loyalty to core product affects the customer's purchasing intention positively while lowering expected-discounting rates. This conclusion suggests the importance of a marketing strategy that heightens satisfaction of existing customers who use a single item, which is just as important as strategies to induce switching behavior of the customers of other companies through competitive pricing. Also, the results suggest that rather than appeal to loyal customers through discounts, it is more effective to offer them different benefits or value.

• Proceedings of the IEEK Conference
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• 2000.07a
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• pp.101-104
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• 2000

Nowadays, the issue of congestion control in high-speed communication networks becomes critical in view of the bandwidth-delay products for efficient data flow. In particular, the fact that the congestion is often accompanied by the data flow from the high-speed link to low-speed link is important with respect to the stability of closed-loop congestion control. The Virtual-Connection Network (VCN) in Gigabit Ethernet networks is a packet-switching based network capable of implementing cell- based connection, link-by-link flow-controlled connection, and single- or multi-destination virtual connections. VCN described herein differ from the virtual channel in ATM literature in that VCN have link-by-link flow control and can be of multi-destination. VCNs support both connection-oriented and connectionless data link layer traffic. Therefore, the worst collision scenario in Ethernet CSMA/CD with virtual collision brings about end-to-end delay. Gigabit Ethernet networks based on CSMA/CD results in non-deterministic behavior because its media access rules are based on random probability. Hence, it is difficult to obtain any sound mathematical formulation for congestion control without employing random processes or fluid-flow models. In this paper, an analytical method for the design of a congestion control scheme is proposed based on Smith＇s principle to overcome instability accompanied with the increase of end-to-end delays as well as to avoid cell losses. To this end, mathematical analysis is provided such that the proposed control scheme guarantees the performance improvement with respect to bandwidth and latency for selected network links with different propagation delays. In addition, guaranteed bandwidth is to be implemented by allowing individual stations to burst several frames at a time without intervening round-trip idle time.

• Journal of international Conference on Electrical Machines and Systems
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• v.3 no.1
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• pp.78-82
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• 2014

Power Transformers with more than one secondary winding are not uncommon in industrial applications. But new classes of applications where very large number of independent secondaries are used are becoming popular in controlled converters for medium and high voltage applications. Cascade H-bridge medium voltage drives and Pulse Step Modulation (PSM) based high voltage power supplies are such applications. Regulated high voltage power supplies (Fig. 1) with 35-100 kV, 5-10 MW output range with very fast dynamics (${\mu}S$ order) uses such transformers. Such power supplies are widely used in fusion research. Here series connection of isolated voltage sources with conventional switching semiconductor devices is achieved by large number of separate transformers or by single unit of multi-secondary transformer. Naturally, a transformer having numbers of secondary windings (~40) on single core is the preferred solution due to space and cost considerations. For design and simulation analysis of such a power supply, the model of a multi-secondary transformer poses special problem to any circuit analysis software as many simulation softwares provide transformer models with limited number (3-6) of secondary windings. Multi-Secondary transformer models with 3 different schemes are available. A comparison of test results from a practical Multi-secondary transformer with a simulation model using magnetic component is found to describe the behavior closer to observed test results. Earlier models assumed magnetising inductance in a linear loss less core model although in actual it is saturable core made-up of CRGO steel laminations. This article discusses a more detailed representation of flux coupled magnetic model with saturable core properties to simulate actual transformers very close to its observed parameters in test and actual usage.