• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 추계학술대회 논문집
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• pp.146-149
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• 2003

In this Work, we have studied about an RSFQ 2$\times$2 crossbar switch. The circuit was designed, simulated, and laid out for mask fabrication The switch cell was composed of a splitter a confluence buffer, and a switch core. An RSFQ 2$\times$2 crossbar switch was composed of 4 switch cells, a switch control input to select the cross and bar, data input, and data outputs. When a pulse was input to the switch control input to select the cross or bar the route of the input data was determined, and the data was output at the proper output port. We simulated and optimized the switch-element circuit and 2$\times$2 crossbar switch, by using Xic and Julia. We also performed the mask layout of the circuit by using Xic and Lmeter.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2009년도 추계학술대회 논문집
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• pp.327-329
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• 2009

A first short stoke current which has a 10/350 ${\mu}s$ waveform is able to be generated by using the crowbar switch in R-L-C circuit. In this paper, a peaking circuit has been applied to make crowbar switch. Operate effective for generating 10/350 ${\mu}s$ waveform. According to simulation with PSpice, we have found that some value of inductance were more effective to trigger a crowbar switch. As a result of experimental test using crowbar switch with peaking circuit, the success rate of triggering crowbar switch is higher than the normal crowbar switch without peaking circuit.

• Progress in Superconductivity
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• 제5권1호
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• pp.13-16
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• 2003

In this work, we have studied about an RSFQ (Rapid Single Flux Quantum) switch element. The circuit was designed, simulated, and laid out for mask fabrication. The switch cell was composed of a D flip-flop, a splitter, a confluence buffer, and a switch core. The switch core determined if the input data could pass to the output. “On” and o“off” controls in the switch core could be possible by utilizing an RS flip-flop. When a control pulse was input to the “on” port, the RS flip-flop was in the set state and passed the input pulses to the output port. When a pulse was input to the “off” port, the RS flip-flop was in the reset state and prevented the input pulses from transferring to the output port. We simulated and optimized the switch element circuit by using Xic, WRspice, and Julia. The minimum circuit margins in simulations were more than $\pm$20%. We also performed the mask layout of the circuit by using Xic and Lmeter.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.915-916
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• 2007

There are many equipments for the Short Circuit Test, for example Short Circuit Generator, Induction Motor, Sequence Timer, Exciter, CLR, Back Up Breaker, Making Switch and TRV etc. Especially Back up Breaker and Making Switch are very important equipments to test the short circuit test. A role of a Back up Breaker is to break high-voltage and high-current for short circuit test and a Making Switch should be operated always same speed/time and kept electrical-mechanical characteristics to make the voltage and current of short circuit test. This study introduces to the short circuit test also to kinds, principal movements and compare them of Back up Breaker and Making Switch.

• IEIE Transactions on Smart Processing and Computing
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• 제3권6호
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• pp.425-429
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• 2014

This paper proposes a DC-DC Buck-Converter with DT-CMOS (Dynamic Threshold-voltage MOSFET) Switch. The proposed circuit was evaluated and compared with a CMOS switch by both the circuit and device simulations. The DT-CMOS switch reduced the output ripple and the conduction loss through a low on-resistance. Overall, the proposed circuit showed excellent performance efficiency compared to the converter with conventional CMOS switch. The proposed circuit has switching frequency of 1.2MHz, 3.3V input voltage, 2.5V output voltage, and maximum current of 100mA. In addition, this paper proposes a SCP (Short Circuit Protection) circuit to ensure reliability.

• Journal of Power Electronics
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• 제12권6호
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• pp.954-959
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• 2012

A hybrid switch that uses a microelectromechanical system (MEMS) switch as a gate driver of a MOSFET is applied to an energy harvesting system. The power management circuit adopting the hybrid switch provides ultralow leakage, self-referencing, and high current handling capability. Measurements show that solar energy harvester circuit utilizing the MEMS-MOSFET hybrid switch accumulates energy and charges a battery or drive a resistive load without any constant power supply and reference voltage. The leakage current during energy accumulation is less than 10 pA. The power management circuit adopting the proposed hybrid switch is believed to be an ideal solution to self-powered wireless sensor nodes in smart grid systems.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2009년도 정기총회 및 추계학술대회 논문집
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• pp.155-157
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• 2009

This paper proposed a soft switching boost converter with an auxiliary circuit, and a modified control method for reduction of switch stress. The proposed converter applies an auxiliary circuit, which is added to the conventional boost converter and used to achieve soft switching for both a main switch and an auxiliary switch. The auxiliary circuit consist of a resonant inductor and two capacitors, an auxiliary switch. The main switch is operated ZVS turn-on, turn-off also auxiliary switch is operated ZCS turn-on, ZVS turn-off. The proposed soft switching boost converter has lower switch loss and higher efficiency than conventional soft switching boost converter.

• 한국전자통신학회논문지
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• 제3권2호
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• pp.79-85
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• 2008

다양한 무선통신 방식이 출현함에 따라 배터리 수명과, 저전력 동작이 중요시되면서 무선 통신용 LSI는 SI circuit을 이용하는 analog current-mode signal processing을 주목하고 있다. 그러나 SI (Switched-Current) circuit을 구성하는 current memory는 clock-feedthrough의 문제점을 갖는다. 본 논문에서는 current memory의 문제점인 clock-feedthrough의 일반적인 해결방안으로 CMOS switch의 연결을 검토하고, current memory 성능 개선의 설계방안을 제안하기 위하여 CMOS switch 간의 width의 관계를 도출하고자 한다. Simulation 결과, memory MOS의 width가 20um, input current와 bias current의 ratio가 0.3, CMOS switch nMOS의 width가 2~6um일 경우에 CMOS switch 간의 width는 $W_{Mp}=5.62W_{Mn}+1.6$의 관계로 정의되고, CMOS switch nMOS의 width가 6~10um일 경우에 CMOS switch 간의 width는 $W_{Mp}=2.05W_{Mn}+23$의 관계로 정의되는 것을 확인하였다. 이 때 정의된 MOS transistor의 관계는 memory MOS의 성능향상을 위한 설계에 유용한 지침이 될 것으로 기대된다.

• 한국안전학회지
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• 제37권1호
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• pp.12-19
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• 2022

Circuit breakers are a crucial factor in ensuring the safety of a Direct Current (DC) grid. One type of DC circuit breaker, the Z-source DC circuit breaker (ZCB), uses a thyristor, which is a type of semiconductor switch. In the event of a fault in the circuit, the ZCB isolates the fault by generating a zero crossing current in the thyristor. The thyristor quickly and actively isolates the fault while generating a zero crossing current, but thyristor switch cannot control turn-off and the allowable current is lower than the current of the mechanical switch. Therefore, it is best to use a mechanical switch with a high allowable current capacity that is capable of on/off control. Due to the slow reaction time of mechanical switches, they may not isolate the fault during the zero crossing current time interval created by the existing circuit. In this case, the zero crossing current time can be increased by using the property that hinders the rapid change in the current of the inductor. This paper will explore whether adding system inductance to increase the zero crossing current time interval is a solution to this problem. The simulation of changing inductor and capacitor (LC) of the circuit is repeated to find an optimal change in the zero crossing current time according to the LC change and provides an inductor and capacitor range optimized for a specific load. The inductor and capacitor range are expected to provide optimization information in the form LC values for future applications of ZCB's using a mechanical switch.

• 한국지능시스템학회:학술대회논문집
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• 한국퍼지및지능시스템학회 2007년도 춘계학술대회 학술발표 논문집 제17권 제1호
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• pp.485-488
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• 2007

최근 Analog Sampled-Data 신호처리를 위하여 주목되고 있는 SI(Switched-Current) circuit은 저전력 동작을 하는 장점이 있지만, 반면에 SI circuit에서의 기본 회로인 Current Memory는 Charge Injection에 의한 Clock Feedthrough이라는 치명적인 단점을 갖고 있다. 따라서 본 논문에서는 Current Memory의 문제점인 Clock Feedthrough의 일반적인 해결방안으로 Dummy Switch의 연결을 검토하였고, Austria Mikro Systeme(AMS)에서 $0.35{\mu}m$ CMOS process BSIM3 Model로 제작하기 위하여 Current Memory의 Switch MOS와 Dummy Switch MOS의 적절한 Width을 정의하여야 하므로, 그 값을 도출하였다. Simulation 결과, Switch의 Width는 $2{\mu}m$, Dummy Switch의 Width는 $2.35{\mu}m$로 정의될 수 있음을 확인하였다.