• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.4
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• pp.135-140
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• 2005

Thermal-fluid analysis was performed to understand the thermal behavior in the horizontal CVD reactor thereby to design a susceptor which has a uniform deposition rate during silicon EPI growing. Four different types of susceptor designs, standard (no hole susceptor), hole $\sharp$1 (240 mm), hole $\sharp$2 (150 mm) and hole $\sharp$3 (60 mm), were simulated by CFD (Computational Fluid Dynamics) tool. Temperature, gas flow, deposition rate and growth rate were calculated and analyzed. The degree of flatness of EPI wafer loaded on the susceptor was computed in terms of silicon growth rate. The simulation results show that the temperature and thermal distribution in the wafer are greatly dependent on inner diameter of hole susceptor and demonstrate that the introduction of hole in the susceptor can degrade wafer flatness. Maximum temperature difference appeared around holes. As the diameter of the hole decreases, flatness of the wafer becomes poor. Among the threes types of susceptors with the hole, optimal design which resulted a good uniform flatness ($5\%$) was obtained when using hole $\sharp$1.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.6
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• pp.3714-3721
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• 2015

Although sheath-type heating line is generally used for susceptor heater, performance deterioration problems in temperature uniformity occurs in the case of large scale and high temperature condition. We developed new design and prototype of the susceptor using sheet metal to provide performance improvement in temperature uniformity. Temperature uniformity below 1.4% in the surface temperature condition of $450^{\circ}C$ was verified in the susceptor prototype. Also we developed Kernel regression algorithm to estimate measured temperature using temperature learning data. The reliability of the measured temperature uniformity was confirmed by comparative analysis between predicted data and measured data.

• Journal of the Semiconductor & Display Technology
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• v.15 no.1
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• pp.41-46
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• 2016

In this study, gas flow and temperature distribution in the multi-wafer planetary CVD reactor for the Si epitaxial growth were analyzed. Although the structure of the reactor was simplified as the first step of the study, the three-dimensional analysis was performed taking all these considerations of the revolution of the susceptor and the rotation of satellites into account. From the analyses, a reasonable velocity field and temperature field were obtained. However, it was found that analyses including the upper structure of the reactor were required in order to obtain more realistic temperature results. DCS mole fraction above the satellite surface and the susceptor surface without satellite was compared in order to check the gas species mixing. We found that satellite rotation helped gases to mix in the reactor.

• Journal of the Semiconductor & Display Technology
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• v.17 no.4
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• pp.91-96
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• 2018

In this study temperature distribution and gas flow inside a planetary type reactor in which a number of satellites on a spinning susceptor were rotating were analyzed using numerical simulation. Effects of flow rates on gas flow and temperature distribution were investigated in order to obtain design parameters. The commercial computational fluid dynamics software CFD-ACE+ was used in this study. The multiple-frame-of-reference was used to solve continuity, momentum and energy conservation equations which governed the transport phenomena inside the reactor. Kinetic theory was used to describe the physical properties of gas mixture. Effects of the rotation speed of the satellites was clearly seen when the inlet flow rate was small. Thickness of the boundary layer affected by the satellites rotation became very thin as the flow rate increased. The temperature field was little affected by the incoming flow rate of precursors.

• Journal of the Semiconductor & Display Technology
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• v.18 no.3
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• pp.115-121
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• 2019

Response surface methodology (RSM) is used to investigate the complex coupling effects of different operating parameters on silicon growth rate in planetary CVD reactor. Based on the computational fluid dynamics (CFD) model, an accurate RSM model is obtained to predict the growth rate with different parameters, including temperature, pressure, rotation speed of the wafer, and the mole fraction of dichlorosilane (DCS). Analysis of variance is used to estimate the contributions of process parameters and their interactions. Among the four operating parameters that have been studied, the influences of susceptor temperature and the operating pressure were the most significant factors that affect silicon growth rate, followed by the mole fraction of DCS. The influence of wafer rotation is the least. The validation tests show that the results of silicon deposition rate obtained from the regression model are in good agreement with those from CFD model and the maximum deviations is 2.15%.

• Journal of the Semiconductor & Display Technology
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• v.16 no.3
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• pp.1-7
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• 2017

Multi-wafer planetary type chemical vapor deposition reactors are widely used in thin film growth and suitable for large scale production because of the high degree of growth rate uniformity and process reproducibility. In this study, a two-dimensional model for estimating the effect of the gap between satellite and wafer on the wafer surface temperature distribution is developed and analyzed using computational fluid dynamics technique. The simulation results are compared with the results obtained from an analytical method. The simulation results show that a drop in the temperature is noticed in the center of the wafer, the temperature difference between the center and wafer edges is about $5{\sim}7^{\circ}C$ for all different ranges of the gap, and the temperature of the wafer surface decreases when the size of the gap increases. The simulation results show a good agreement with the analytical ones which is based on one-dimensional heat conduction model.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.434-435
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• 2012

Plasma enhanced chemical vapor deposition (PECVD) silicon dioxide thin films have many applications in semiconductor manufacturing such as inter-level dielectric and gate dielectric metal oxide semiconductor field effect transistors (MOSFETs). Fundamental chemical reaction for the formation of SiO2 includes SiH4 and O2, but mixture of SiH4 and N2O is preferable because of lower hydrogen concentration in the deposited film [1]. It is also known that binding energy of N-N is higher than that of N-O, so the particle generation by molecular reaction can be reduced by reducing reactive nitrogen during the deposition process. However, nitrous oxide (N2O) gives rise to nitric oxide (NO) on reaction with oxygen atoms, which in turn reacts with ozone. NO became a greenhouse gas which is naturally occurred regulating of stratospheric ozone. In fact, it takes global warming effect about 300 times higher than carbon dioxide (CO2). Industries regard that N2O is inevitable for their device fabrication; however, it is worthwhile to develop a marginable nitrous oxide free process for university lab classes considering educational and environmental purpose. In this paper, we developed environmental friendly and material cost efficient SiO2 deposition process by substituting N2O with O2 targeting university hands-on laboratory course. Experiment was performed by two level statistical design of experiment (DOE) with three process parameters including RF power, susceptor temperature, and oxygen gas flow. Responses of interests to optimize the process were deposition rate, film uniformity, surface roughness, and electrical dielectric property. We observed some power like particle formation on wafer in some experiment, and we postulate that the thermal and electrical energy to dissociate gas molecule was relatively lower than other runs. However, we were able to find a marginable process region with less than 3% uniformity requirement in our process optimization goal. Surface roughness measured by atomic force microscopy (AFM) presented some evidence of the agglomeration of silane related particles, and the result was still satisfactory for the purpose of this research. This newly developed SiO2 deposition process is currently under verification with repeated experimental run on 4 inches wafer, and it will be adopted to Semiconductor Material and Process course offered in the Department of Electronic Engineering at Myongji University from spring semester in 2012.