1 |
R. Bartlome, S. De Wolf, B. Demaurex, C. Ballif, E. Amanatides and D. Mataras, Practical silicon deposition rules derived from silane monitoring during plasmaenhanced chemical vapor deposition. Journal of Applied Physics, 117 (20), 2015, 203303.
DOI
|
2 |
C. Schüler, F. Betzenbichler, C. Drescher and O. Hinrichsen, Optimization of the synthesis of Ni catalysts via chemical vapor deposition by response surface methodology. Chemical Engineering Research and Design, 132, 2018, pp. 303-312.
DOI
|
3 |
S. Biira, P. L. Crouse, H. Bissett, B. Alawad, T. T. Hlatshwayo, J. Nel and J. B. Malherbe, Optimization of the synthesis of ZrC coatings in a radio frequency induction-heating chemical vapour deposition system using response surface methodology. Thin Solid Films, 624, 2017, pp. 61-69.
DOI
|
4 |
G. Allaedini, S. M. Tasirin and P. Aminayi, Yield optimization of nanocarbons prepared via chemical vapor decomposition of carbon dioxide using response surface methodology. Diamond and Related Materials, 66, 2016, pp. 196-205.
DOI
|
5 |
L.-s. An, C.-j. Liu and Y.-w. Liu, Optimization of operating parameters in polysilicon chemical vapor deposition reactor with response surface methodology. Journal of Crystal Growth, 489, 2018, pp. 11-19.
DOI
|
6 |
J. Li, Z.-y. Fei, Y.-f. Xu, J. Wang, B.-f. Fan, X.-j. Ma and G. Wang, Study on the optimization of the deposition rate of planetary GaN-MOCVD films based on CFD simulation and the corresponding surface model. Open Science, 5 (2), 2018, 171757.
|
7 |
Z. Ramadan, H. M. Abdelmotalib and I.-T. Im, Modeling of Epitaxial Silicon Growth from the DCSH2-HCl System in a Large Scale CVD Reactor. IEEE Transactions on Semiconductor Manufacturing 2018, pp. 363-370.
|
8 |
G. E. Box and N. R. Draper, Empirical model-building and response surfaces: John Wiley & Sons, 1987.
|
9 |
D.-S. Shin, H.-S. Rhee, T. Ueno, H. Lee and S.-H. Lee, Methods of fabricating a semiconductor device using a selective epitaxial growth technique, U.S. Patent No. 7,361,563., 2008.
|
10 |
A. Vohra and T. Satyanarayana, Statistical optimization of the medium components by response surface methodology to enhance phytase production by Pichia anomala. Process Biochemistry, 37 (9), 2002, pp. 999-1004.
DOI
|
11 |
F.-R. Fan, Y. Ding, D.-Y. Liu, Z.-Q. Tian and Z. L. Wang, Facet-selective epitaxial growth of heterogeneous nanostructures of semiconductor and metal: ZnO nanorods on Ag nanocrystals, Journal of the American Chemical Society, Vol. 131, no.34, 2009, pp. 12036-12037.
DOI
|
12 |
C. H. Ang, W. Lin and J. Z. Zheng, Method of fabricating a CMOS device with integrated super-steep retrograde twin wells using double selective epitaxial growth, U.S. Patent No. 6,743,291., 2004.
|
13 |
I. H. Oh, C. G. Takoudis and G. W. Neudeck, Mathematical modeling of epitaxial silicon growth in pancake Chemical Vapor Deposition reactors. Journal of the Electrochemical Society, 138 (2), 1991, pp. 554-567.
DOI
|
14 |
R. L. Mason, R. F. Gunst and J. L. Hess, Statistical design and analysis of experiments: with applications to engineering and science. John Wiley & Sons; Vol. 474, 2003.
|
15 |
S. Pae, T. Su, J. P. Denton and G. W. Neudeck, Multiple layers of silicon-on-insulator islands fabrication by selective epitaxial growth. IEEE Electron Device Letters, 20 (5), 1999, pp. 194-196.
DOI
|
16 |
R. Loo, J. Sun, L. Witters, A. Hikavyy, B. Vincent, Y. Shimura, P. Favia, O. Richard, H. Bender and W. Vandervorst, In Strained Ge FinFET structures fabricated by selective epitaxial growth, Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International, IEEE: 2014; pp. 19-20.
|
17 |
M. Hierlemann, A. Kersch, C. Werner and H. Schafe, A Gas‐Phase and Surface Kinetics Model for Silicon Epitaxial Growth with SiH2Cl2 in an RTCVD Reactor. Journal of The Electrochemical Society, 142 (1), 1995, pp.259-266.
DOI
|
18 |
H. Habuka, Y. Aoyama, S. Akiyama, T. Otsuka, W.-F. Qu, M. Shimada and K. Okuyama, Chemical process of silicon epitaxial growth in a SiHCl3-H2 system. Journal of Crystal Growth, 207 (1), 1999, pp. 77-86.
DOI
|
19 |
I. Zaidi, Y.-H. Jang, D. G. Ko and I. T. Im, Numerical modeling study on the epitaxial growth of silicon from dichlorosilane. Journal of Crystal Growth, 483, 2018, pp.1-8.
DOI
|
20 |
R. Hazbun, J. Hart, R. Hickey, A. Ghosh, N. Fernando, S. Zollner, T. N. Adam and J. Kolodzey, Silicon epitaxy using tetrasilane at low temperatures in ultra-high vacuum chemical vapor deposition. Journal of Crystal Growth, 444, 2016, pp. 21-27.
DOI
|