• Title/Summary/Keyword: Surge Absorber

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Surge Characteristics Analysis and Reduction Method of Vacuum Circuit Breaker (진공차단기 스위칭 써지 특성 해석 및 저감 방안)

  • Kim, Jong-Gyeum
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.62 no.2
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    • pp.190-195
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    • 2013
  • Vacuum circuit breaker(VCB) has been widely used for interruption of load current and fault current for high voltage motor in the industrial field. Its arc extinguishing capability is excellent compared to other breakers. But it has the potential to cause multi reignition surge by high extinguishing capability. Surge voltage is generated by the opening and closing of VCB. Multi reignition surge of VCB is steep-fronted waveform. It may have a detrimental effect on the motor winding insulation. So, most of users install a protection device to limit steep-front waveform at the motor terminal or breaker side. So, most of users install a protection device at the motor terminal or breaker side. This protective device is surge absorber(SA) such as ZnO and RC type. In this study, we analyzed whether there is any effect when two type SA is applied to the VCB multi reignition surge. We confirmed that ZnO SA is slightly more effective than RC SA for reduction of multi reignition surge.

The Selection of Appropriate Surge Absorber Value Reducing the Switching Surge of VCB for High Voltage Motor and Surge Measurement (고압전동기용 진공차단기의 스위칭 써지를 저감시키는 써지흡수기의 적정치 선정과 써지측정)

  • Kim, Taek-Soo;Lee, Sung-Chul;Lee, Eun-Woong;Kim, Jong-Kyeom
    • Proceedings of the KIEE Conference
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    • 1994.07a
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    • pp.100-102
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    • 1994
  • VCB, with its big arc extinction in very short switching time, produces the high switching surge voltage which may cause the breakdown of motor insulation or acceleration of insulation deterionation. To protect motor winding insulation, we developed the computer algorithm for simulating the surge occurred in VCB by EMTP. And we established the effect of the C-R surge absorber by the surge measurement in the motor-VCB circuit.

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The Electrical and Transient Thermal characteristics of TVS diode for Surge Absorber (TVS 다이오드의 전기적 특성 및 과도 열방출 특성 해석)

  • Kim, Sang-Cheol;Kim, Hyung-Woo;Kim, Eun-Dong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05c
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    • pp.208-212
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    • 2003
  • Silicon transient voltage suppressors (TVSs) are clamping devices that limit voltage spikes by low impedance avalanche breakdown of a rugged silicon PN junction. They are used to protect sensitive components from electrical overstress such as that caused by induces lightning, inductive load switching and electrostatic discharge. In this paper, we present static and dynamic characteristics of TVS diode using thermal analysis simulation software. And also, it is presented that the thermal dissipation characteristics of TVS diode in the transient state.

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Features of Transient Overvoltages Observed at 22.9kV Consumer's Substation (22.9kV 수전설비에서 측정된 과도과전압의 특성)

  • Shim, Hae-Sup;Lee, Bok-Hee
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.28 no.9
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    • pp.52-59
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    • 2014
  • The aims of this paper are to characterize the transient overvoltages(TOVs) and to evaluate the risk occurring at 22.9kV consumer's substation. The measurements of lightning- and switching-caused TOVs were made during Mar. 2013 and Feb. 2014. As a consequence, 47 events of TOVs were recorded and 4 of them were higher than the input voltage envelope(IVE) of the information technology industry council(ITI) curve. The measured TOVs are characterized by longer front times and longer durations compared to the $1.2/50{\mu}s$ standard impulse voltage waveform, and some of them represent bipolar waves with lower oscillation frequencies. It suggests that the test of non-standard impulse voltage waveforms is needed for effective risk assessments of power apparatus. Lightning- and switching-caused TOVs exceeding IVE of ITI curve are induced at the secondary of 22.9kV potential transformer(PT). We may, therefore, conclude that the surge protection devices should be applied at the secondary of PT and the surge absorbers should be installed at the primary of VCB or PT. The results presented in this paper could be useful to design the reasonable insulation coordination for 22.9kV consumer's substation.

Analysis of Malfunction Characteristics of High Sensitivity Type Earth Leakage Circuit Breaker for 30[A] due to Lightning Impulse Voltages (뇌임펄스전압에 대한 30[A]용 고감도형 누전 차단기의 오동작에 대한 특성의 해석)

  • 이복희;이승칠;김찬오
    • The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.11 no.6
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    • pp.96-103
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    • 1997
  • This paper deals with the malfunction characteristics of the earth leakage circuit breakers(ELBs) applied by a lightning impulse voltage. In the cases of the regulation of KS C 4613 and the simulated circuits with surge protection devices, the dead operation characteristics of the ELBs against lightning impulse voltages were experimentally investigated and discussed. As a result, all the specimens(ELBs) used in this work have a cutoff performance of the lightning impulse voltage when the differential mode surges were injected at the input terminals of the ELBs owing to a surge absorber installed at the power source side of amplification circuit. Four kinds of the specimens have brought about malfunction in the condition of the lightning impulse dead operation test defined in KS C 4613, and the malfunction voltages are relatively high and are about 5-6.5[kV]. In the case of the simulated test circuit with surge protection devicesthree kinds of the ELBs have led to malfunction. Also the voltage level causing the malfunction of the ELBs is decreased by operation of surge protection devices, and it ranges from 3 to 5(kV).

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Development of IGBT Stacks for Cost Reduction (원가절감형 IGBT스택 개발)

  • Hong S.C;Kang K.W.;Jung W.C.;Hwang Y.H.
    • Proceedings of the KIPE Conference
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    • 2003.07a
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    • pp.128-132
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    • 2003
  • This paper deals with the development of IGBT stacks for cost reduction. One stack is consist of 4 IGBTS in parallel. In the high- and mid-power converters, IGBT stacks are more suitable than single IGBTS in the aspects of total cost of semiconductor devices, time for purchasing, maintenance, radiation of heat, size of surge absorber and harmonic filter, frequency characteristics, and etc.. Problems accompanied by parallel construction are studied and solved. Economical efficiency is discussed and field tests with 100kVA UPS are tarried out to verify the validity of the developed IGBT stacks.

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