• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.81.2-81.2
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• 2012

To fabricate a metal mold for injection molding, hot-embossing and imprinting process, mechanical machining, electro discharge machining (EDM), electrochemical machining (ECM), laser process and wet etching ($FeCl_3$ process) have been widely used. However it is hard to get precise structure with these processes. Electrochemical etching has been also employed to fabricate a micro structure in metal mold. A through mask electrochemical micro machining (TMEMM) is one of the electrochemical etching processes which can obtain finely precise structure. In this process, many parameters such as current density, process time, temperature of electrolyte and distance between electrodes should be controlled. Therefore, it is difficult to predict the result because it has low reliability and reproducibility. To improve it, we investigated this process numerically and experimentally. To search the relation between processing parameters and the results, we used finite element simulation and the commercial finite element method (FEM) software ANSYS was used to analyze the electric field. In this study, it was supposed that the anodic dissolution process is predicted depending on the current density which is one of major parameters with finite element method. In experiment, we used stainless steel (SS304) substrate with various sized square and circular array patterns as an anode and copper (Cu) plate as a cathode. A mixture of $H_2SO_4$, $H_3PO_4$ and DIW was used as an electrolyte. After electrochemical etching process, we compared the results of experiment and simulation. As a result, we got the current distribution in the electrolyte and line profile of current density of the patterns from simulation. And etching profile and surface morphologies were characterized by 3D-profiler(${\mu}$-surf, Nanofocus, Germany) and FE-SEM(S-4800, Hitachi, Japan) measurement. From comparison of these data, it was confirmed that current distribution and line profile of the patterns from simulation are similar to surface morphology and etching profile of the sample from the process, respectively. Then we concluded that current density is more concentrated at the edge of pattern and the depth of etched area is proportional to current density.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.5
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• pp.196-201
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• 2014

We investigated defects and surface polarity in AlN and GaN by using wet chemical etching. Therefore, the effectiveness and reliability of estimating the single crystals by defect selective etching in NaOH/KOH eutectic alloy have been successfully demonstrated. High-quality AlN and GaN single crystals were etched in molten NaOH/KOH eutectic alloy. The etching characteristics and surface morphologies were carried out by scanning electron microscope (SEM) and atomic force microscope (AFM). The etch rates of AlN and GaN surface were calculated by etching depth as a function of etching time. As a result, two-types of etch pits with different sizes were revealed on AlN and GaN surface, respectively. Etching produced hexagonal pits on the metal-face (Al, Ga) (0001) plane, while hexagonal hillocks formed on the N-face. On etching rate calibration, it was found that N-face had approximately 109 and 15 times higher etch rate than the metal-face of AlN and GaN, respectively. The size of etch pits increased with an increase of the etching time and they tend to merge together with a neighbouring etch pits. Also, the chemical mechanism of each etching process was discussed. It was found that hydroxide ion ($OH^-$) and the dangling bond of nitrogen play an important role in the selective etching of the metal-face and N-face.

• The korean journal of orthodontics
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• v.31 no.2 s.85
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• pp.173-185
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• 2001

The orthodontic osseointegrated titanium implant, a kind of intraoral skeletal anchorage can be an alternative to tooth-borne anchorage, in case that the conventional tooth-borne anchorage is not available or the anchorage is critical. This study was conducted to elucidate the effect of early loading on the osseointegration of the orthodontic titanium implant and the healing process of the impaired bone at the site of implant after removing it. In two adult beagle dogs24 osseointegrated titanium implants were inserted into the alveolar bone, with 12 implants placed in each dog. In dog1, 6 out of 12 implants were loaded with 200-300gm of force immediately after placing, and the remaining 6 implants were not loaded for 4weeks. In dog2, all 12 implants had healing period of 4weeks, and then were loaded with 200-300gm of force for another 4weeks. Following an observation period of 4 and 8 weeks, the animals were sacrificed. Then the implants and the surrounding bone of dog1 and dog2 were removed, respectively. Undecalcified sections along the long axis of implant were made and the degree of osseointegration was examined under the light microscope. The results were as follows. 1. In the histologic features of tissues around implants anchored in dog1, there was no difference between immediately loaded implants and unloaded implants. Immature woven bone was ingrowing into the thread spaces from the original compacta and in direct contact with the implant surface in part. 2. The premature loading just after 4weeks healing period did not halt the progress of the osseointegration between bone and implant surface. The woven bone around the implants was maturing into the lamellar bone which resembled the structure of the original compacta at the end of 8weeks observation period. 3. Most implants with the inflammed surrounding mucosa were lost or mobile. The mobile implants were encapsulated by fibrous connective tissue which separated the implant surface from the bone. 4. The impaired bone at the site of the implant failed to anchor was showing recovery without inflammatory reaction 2weeks after removing, with the immaure woven bone lined by active osteoblasts and osteoid. Based on the results of this study, the integration of this orthodontic implant seemed to be impaired by the inflammation of the tissue surrounding the Implant rather than by early loading on implant, and increased with time lapsed after placing the implant. The use of implant described in this report can be recommended as an orthodontic anchorage unit immediately after insertion under the careful control of orthodontic force applied and plaque.

• Journal of Sensor Science and Technology
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• v.3 no.2
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• pp.74-80
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• 1994

Silicon direct bonding technology is very attractive for both silicon-on-insulator devices and sensor fabrication because of its thermal stress free structure and stability. The process of SDB includes hydration of silicon wafer and heat treatment in a wet oxidation furnace. After hydration process, hydroxyl groups of silicon wafer were analyzed by using Fourier transformation-infrared spectroscopy. In case of hydrophilic treatment using a ($H_{2}O_{2}\;:\;H_{2}SO_{4}$) solution, hydroxyl groups are observed in a broad band around the 3474 $cm^{-1}$ region. However, hydroxyl groups do not appear in case of diluted HF solution. The bonded wafer was etched by using tetramethylammonium hydroxide etchant. The surface of the self etch-stopped silicon dioxide is completely flat, so that it can be used as sensor applications such as pressure, flow and acceleration, etc..

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.436-437
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• 2012

Double patterning technology (DPT) has been suggested as a promising candidates of the next generation lithography technology in FLASH and DRAM manufacturing in sub-40nm technology node. DPT enables to overcome the physical limitation of optical lithography, and it is expected to be continued as long as e-beam lithography takes place in manufacturing. Several different processes for DPT are currently available in practice, and they are litho-litho-etch (LLE), litho-etch-litho-etch (LELE), litho-freeze-litho-etch (LFLE), and self-aligned double patterning (SADP) [1]. The self-aligned approach is regarded as more suitable for mass production, but it requires precise control of sidewall space etch profile for the exact definition of hard mask layer. In this paper, we propose etch end point detection (EPD) in spacer etching to precisely control sidewall profile in SADP. Conventional etch EPD notify the end point after or on-set of a layer being etched is removed, but the EPD in spacer etch should land-off exactly after surface removal while the spacer is still remained. Precise control of real-time in-situ EPD may help to control the size of spacer to realize desired pattern geometry. To demonstrate the capability of spacer-etch EPD, we fabricated metal line structure on silicon dioxide layer and spacer deposition layer with silicon nitride. While blanket etch of the spacer layer takes place in inductively coupled plasma-reactive ion etching (ICP-RIE), in-situ monitoring of plasma chemistry is performed using optical emission spectroscopy (OES), and the acquired data is stored in a local computer. Through offline analysis of the acquired OES data with respect to etch gas and by-product chemistry, a representative EPD time traces signal is derived. We found that the SE-EPD is useful for precise control of spacer etching in DPT, and we are continuously developing real-time SE-EPD methodology employing cumulative sum (CUSUM) control chart [2].

• The Journal of Korean Academy of Prosthodontics
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• v.36 no.5
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• pp.772-785
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• 1998

This study was undertaken to clarify the microstructure of the different IPS Empress ingots by etching and to observe the change of leucite crystal structure according to subsequent heat treatment and the crystal distribution according to sprue types(${\phi}2.8mm$, single sprue; ${\phi}1.8mm$, double sprue) by scanning electron microscopy. IPS Empress T1, O1 ingots used for staining technique, and Dentin(A2) ingots used for layering technique were selected for this study. To observe the microstructures of these ingots before pressing, the specimens were prepared in splinters($3{\times}3{\times}3mm$) taken from the original ingots. And to estimate crystal distribution and microstructural change by sprue type and subsequent heat treatment. the specimens($3{\times}3{\times}3mm$) were heat-pressed through the two types of sprues with different diameters and numbers, and all specimens were fired according to the recommended firing schedule. The observed surface was ground with waterproof papers($#800{\sim}#1800$) on the grind polisher and was cleaned ultrasonically. All specimen were etched with 0.5% hydrofluoric acid. After etching, the surface was treated by ion sputter coating for SEM observation at an accelerating voltage of 20kV. In all specimens, the central area of ground surface was observed because there was less difference in microstructure between the peripheral area and the central area. The results were as follows ; 1. In the microstructure according to the ingot type, there was a wide difference between the staining (T1,O1) and layering(Dentin A2) ingots, but there was not a considerable difference between the T1 ingot and the O1 ingot for staining technique. 2. In all specimens, the crystal dispersion of IPS Empress ceramic using double sprue was significantly more scattered than that of IPS Empress ceramic using single sprue. The degree of scattering was strongest in the Dentin(A2) specimen and weakest in the O1 ingot. 3. In the microstructural change according to the subsequent heat treatment, all of ingots had some microcracks in the inside of the leucite crystal and the glass matrix after pressing. The inner splinters of the leucite crystal became smaller, and more microcracks occurred in the glass matrix due to increasing heat treatment times. 4. The size of leucite crystals varied from $1{\mu}m\;to\;5{\mu}m$. The mean size of mature crystals was about $5{\mu}m$. The form of the crystal was similar to a circle when it was smaller and similar to an ellipse when it was larger.

• Journal of the korean academy of Pediatric Dentistry
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• v.45 no.3
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• pp.290-298
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• 2018

This study aimed to evaluate surface morphology and resin tag penetration of resin infiltration into primary anterior teeth after enamel deproteinization with sodium hypochlorite (NaOCl) prior to phosphoric acid ($H_3PO_4$) etching. Ninety primary anterior teeth with non-cavitated caries lesion were devided five groups according to enamel pretreatment as follows, group I-15% hydrochloric acid (HCl) 2min. ; group II-5.25% NaOCl 1min., 35% $H_3PO_4$ 1min. ; group III-5.25% NaOCl 2min., 35% $H_3PO_4$ 1min. ; group IV-5.25% NaOCl 1min., 35% $H_3PO_4$ 2min. ; group V-5.25% NaOCl 2min., 35% $H_3PO_4$ 2min. Fifteen teeth were examined etched surface structure using field emission-scanning electron microscope. Seventy five teeth were infiltrated with resin, maximum penetration depth and percentage penetration were analysed using dual fluorescence confocal microscopy. As the application time of NaOCl increased, ratio of enamel type I, II were increased. Percentage penetration (PP) was higher in group V than group II, III (p < 0.05). PP of group IV, V did not show any differences. Non-cavitated caries of primary anterior teeth can be treated with resin infiltration. Enamel deproteinization with NaOCl prior to 35% $H_3PO_4$ etching could be an alternative of 15% HCl etching in resin infiltration.

• Journal of the Korean Vacuum Society
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• v.20 no.3
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• pp.217-224
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• 2011

of materials and simplification of process. Micro-blasting is one of the promising method for recycling of waste wafer due to their simple and low cost process. Therefore, in this paper, we make recycling wafer through the micro-blaster. A surface etched by micro-blaster forms particles, cracks and pyramid structure. A pyramid structure formed by micro-blaster has a advantage of reflectivity decrease. However, lifetime of minority carrier is decreased by particles and cracks. In order to solve this problems, we carried out the DRE(Damage Romove Etching). There are two ways to DRE process ; wet etching, dry etching. After the DRE process, we measured reflectivity and lifetime of minority carrier. Through these results, we confirmed that a wafer recycled can be used in solar cell.

• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.16-22
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• 2008

We studied plasma etching of polycarbonate in $O_2/SF_6$, $O_2/N_2$ and $O_2/CH_4$. A capacitively coupled plasma system was employed for the research. For patterning, we used a photolithography method with UV exposure after coating a photoresist on the polycarbonate. Main variables in the experiment were the mixing ratio of $O_2$ and other gases, and RF chuck power. Especially, we used only a mechanical pump for in order to operate the system. The chamber pressure was fixed at 100 mTorr. All of surface profilometry, atomic force microscopy and scanning electron microscopy were used for characterization of the etched polycarbonate samples. According to the results, $O_2/SF_6$ plasmas gave the higher etch rate of the polycarbonate than pure $O_2$ and $SF_6$ plasmas. For example, with maintaining 100W RF chuck power and 100 mTorr chamber pressure, 20 sccm $O_2$ plasma provided about $0.4{\mu}m$/min of polycarbonate etch rate and 20 sccm $SF_6$ produced only $0.2{\mu}m$/min. However, the mixed plasma of 60 % $O_2$ and 40 % $SF_6$ gas flow rate generated about $0.56{\mu}m$ with even low -DC bias induced compared to that of $O_2$. More addition of $SF_6$ to the mixture reduced etch of polycarbonate. The surface roughness of etched polycarbonate was roughed about 3 times worse measured by atomic force microscopy. However examination with scanning electron microscopy indicated that the surface was comparable to that of photoresist. Increase of RF chuck power raised -DC bias on the chuck and etch rate of polycarbonate almost linearly. The etch selectivity of polycarbonate to photoresist was about 1:1. The meaning of these results was that the simple capacitively coupled plasma system can be used to make a microstructure on polymer with $O_2/SF_6$ plasmas. This result can be applied to plasma processing of other polymers.

• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.73-79
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• 2008

In order to apply for transparent conductive oxide(TCO), we deposited ZnO thin films on the glass at room temperature by RF magnetron sputtering method. Deposition conditions for high transmittance and low resistivity were optimized in our previous studies. Under the deposition condition with the RF power of 200 W, target to substrate distance of 30 mm and working pressure of 5 mTorr, highly conductive($7.4{\times}10^{-3}{\Omega}cm$) and transparent(over 85%) ZnO films were prepared. Highly oriented ZnO film in the [002] direction were obtained with specifically designed ZnO targets. Systematic study on dependence of deposition parameters on electrical and optical properties of the as-grown ZnO films were mainly investigated in this work. And for application tests using these films as transparent conductive oxide anodes, wet chemical etching behaviors of ZnO films were also investigated using various chemicals. Wet-chemical etching behavior of ZnO films were investigated using various acid solutions. The concentrations of these different acid solutions were controlled to study the etching shapes and etching rate. ZnO films were anisotropically etched at various concentrations and wet etching led to crater-like surface structure. Also we firstly found that the etching rate and etching shapes of ZnO films strongly depended on the etchant concentrations (i.e. pH) and the etching rate is exponentially decreased with increasing pH values regardless of the acid etchants.