• Title/Summary/Keyword: Surface state factor

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Fatigue life evolution of steel wire considering corrosion-fatigue coupling effect: Analytical model and application

  • Yang Ding;Xiao-Wei Ye;Hong Zhang;Xue-Song Zhang
    • Steel and Composite Structures
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    • v.50 no.3
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    • pp.363-374
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    • 2024
  • The fatigue life of steel wire is affected not only by fatigue load, but also by corrosion environment in service period. Specially, the corrosion pit will lead to stress concentration on the surface of steel wire inducing the formation of fatigue cracks, and the fatigue cracks will accelerate the corrosion process. Therefore, the corrosion fatigue of steel wire is a coupling effect. In this study, the corrosion-fatigue coupling life curve is derived with considering corrosion-fatigue pitting stage, corrosion-fatigue short crack stage and corrosion-fatigue long crack stage. In addition, the stress concentration factors of different corrosion pits are calculated by COMSOL software. Furthermore, the effect of corrosion environment factors, that is, corrosion rate, corrosion pit morphology, frequency and action factor of fatigue load, on fatigue life of steel wire is analyzed. And then, the corrosion-fatigue coupling life curve is compared with the fatigue life curve and fatigue life curve with pre-corrosion. The result showed that the anti-fatigue performance of the steel wire with considering corrosion-fatigue coupling is 68.08% and 41.79% lower than fatigue life curve and fatigue life curve with pre-corrosion. Therefore, the corrosion-fatigue coupling effect should be considered in the design of steel wire.

Soil-Vapor Survey on Soil-Remediation by EMPLEX Collector (EMPLUX Collector에 의한 토양 오염 가스 조사)

  • Kim, Jung-Sung
    • Journal of Environmental Science International
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    • v.17 no.1
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    • pp.119-128
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    • 2008
  • Laboratory analytical results of 22 sets of hydrophobic adsorbent coils containing surface soil-vapor and two soil samples collected by conventional intrusive method from each boring location at two active dry cleaning facilities in the State of Illinois, U.S.A, were presented to evaluate the performance of soil-vapor survey. The most critical factor to determine the effectiveness of soil-vapor survey is the distance from the soil-vapor sampling device to the actual contamination, which is a function of soil porosity, permeability, primary lithology, and other geological and hydrogeological site-specific parameters. Also this factor can be affected by the history of contaminant-generating operations. The laboratory analytical results in this study showed longer dry cleaning operation history (i.e., 50 years) and presence of fine sand at the beneath Site B allow the contaminants to migrate farther and deeper over a fixed time compared to Site A(i.e., 35 years and silty clay) so that the soil-vapor survey is not likely the most effective environmental site investigation method alone for Site B. However, for Site A, the soil-vapor survey successfully screened the site to identify the location reporting the highest soil concentration of chlorinated solvents.

산소분압에 따른 IGZO 박막트랜지스터의 특성변화 연구

  • Han, Dong-Seok;Gang, Yu-Jin;Park, Jae-Hyeong;Yun, Don-Gyu;Park, Jong-Wan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.497-497
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    • 2013
  • Semiconducting amorphous InGaZnO (a-IGZO) has attracted significant research attention as improved deposition techniques have made it possible to make high-quality a-IGZO thin films. IGZO thin films have several advantages over thin film transistors (TFTs) based on other semiconducting channel layers.The electron mobility in IGZO devices is relatively high, exceeding amorphous Si (a-Si) by a factor of 10 and most organic devices by a factor of $10^2$. Moreover, in contrast to other amorphous semiconductors, highly conducting degenerate states can be obtained with IGZO through doping, yet such a state cannot be produced with a-Si. IGZO thin films are capable of mobilities greaterthan 10 $cm^2$/Vs (higher than a-Si:H), and are transparent at visible wavelengths. For oxide semiconductors, carrier concentrations can be controlled through oxygen vacancy concentration. Hence, adjusting the oxygen partial pressure during deposition and post-deposition processing provides an effective method of controlling oxygen concentration. In this study, we deposited IGZO thinfilms at optimized conditions and then analyzed the film's electrical properties, surface morphology, and crystal structure. Then, we explored how to generate IGZO thin films using DC magnetron sputtering. We also describe the construction and characteristics of a bottom-gate-type TFT, including the output and transfer curves and bias stress instability mechanism.

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Seismic Reliability Analysis of Offshore Wind Turbine Support Structure (해상풍력발전기 지지구조물의 지진신뢰성해석)

  • Lee, Gee-Nam;Kim, Dong-Hyawn
    • Journal of Ocean Engineering and Technology
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    • v.29 no.5
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    • pp.342-350
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    • 2015
  • A seismic reliability analysis of the jacket-type support structure for an offshore wind turbine was performed. When defining the limit state function using the dynamic response of the support structure, numerous dynamic calculations should be performedin an approach like the FORM (first-order reliability method). This causes a substantial increase in the analysis cost. Therefore, in this paper, a new reliability analysis approach using the static response is used. The dynamic effect of the response is considered by introducing a new parameter called the peak response factor (PRF). The probability distribution of the PRF could be estimated using the peak value of the dynamic response. The probability distribution of the PRF was obtained for a set of ground motions. A numerical example is considered to compare the proposed approach with the conventional static-response-based approach.

A Numerical Study on the Formation Mechanism of a Mesoscale Low during East-Asia Winter Monsoon

  • Koo, Hyun-Suk;Kim, Hae-Dong;Kang, Sung-Dae;Shin, Dong-Wook
    • Journal of the Korean earth science society
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    • v.28 no.5
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    • pp.613-619
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    • 2007
  • Mesoscale low is often observed over the downstream region of the East Sea (or, northwest coast off the Japan Islands) during East-Asia winter monsoon. The low system causes a heavy snowfall at the region. A series of numerical experiments were conducted with the aid of a regional model (MM5 ver. 3.5) to examine the formation mechanism of the mesoscale low. The following results were obtained: 1) A well-developed mesoscale low was simulated by the regional model under real topography, NCEP reanalysis, and OISST; 2) The mesoscale low was simulated under a zonally averaged SST without topography. This implies that the meridional gradient of SST is the main factor in the formation of a mesoscale low; 3) A thermal contrast ($>10^{\circ}C$) of land-sea and topography-induced disturbance served as the second important factor for the formation; 4) Paektu Mountain caused the surface wind to decelerate downstream, which created a more favorable environment for thermodynamic modification than that was found in a flat topography; and 5) The types of cumulus parameterizations did not affect the development of the mesoscale low.

Evaluating the effects of the inclinations of rock blocks on the stability of bimrock slopes

  • Khorasani, Emad;Amini, Mehdi;Hossaini, Mohammad Farouq;Medley, Edmund
    • Geomechanics and Engineering
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    • v.17 no.3
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    • pp.279-285
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    • 2019
  • The process of slope stability analysis is one of the most important stages in design of some civil and mining projects. Bimslopes are made from bimrocks (block-in-matrix rocks) where rocky blocks are distributed in a bonded matrix of finer texture. These kind of slopes are often seen in weathered and near-surface depths. Previous studies have shown that VBP (Volumetric Block Proportion) is one of the most significant factors affecting bimrocks strength and consequently the stability of bimslopes. In this paper, the influence of block inclinations on bimslope stability have been investigated. For this purpose, 180 theoretical models have been made with various VBPs, all of them have a specified block size distribution. These bimslopes contain blocks with differing dips relative the slope inclination. Also for each kind of block inclination, 10 different blocks arrangements have been modeled. The Finite Element Method (FEM) was used to analysis the stability of these bimslopes models. The results showed the inclination of blocks has a strong impact on the Safety Factor and stability of bimslopes. When the difference in angle of dip of blocks relative to the slope angle is maximum, the Safety Factor of bimslopes tends to be a maximum compared with the matrix-only state. Furthermore, with increasing VBP of bimslopes stability increases. The graphs obtained from this study could be used for preliminary guidance in the projects design with bimslopes.

Reliability Analysis Offshore Wind Turbine Support Structure Under Extreme Ocean Environmental Loads (극한 해양 환경하중을 고려한 해상풍력터빈 지지구조물의 신뢰성 해석)

  • Lee, Sang Geun;Kim, Dong Hyawn
    • Journal of Korean Society of Coastal and Ocean Engineers
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    • v.26 no.1
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    • pp.33-40
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    • 2014
  • Reliability analysis of jacket type offshore wind turbine (OWT) support structure under extreme ocean environmental loads was performed. Limit state function (LSF) of OWF support structure is defined by using structural dynamic response at mud-line. Then, the dynamic response is expressed as the static response multiplied by dynamic response factor (DRF). Probabilistic distribution of DRF is found from response time history under design significant wave load. Band limited beta distribution is used for internal friction angle of ground soil. Wind load is obtained in the form of thrust force from commercial code called GH_Bladed and then, applied to tower hub as random load. In a numerical example, the response surface method (RSM) is used to express LSF of jacket type support structure for 5MW OWF. Reliability index is found using first order reliability method (FORM).

Influence of Weak Ground Ahead of the Tunnel Face on 3D-displacement and Face Extrusion (막장전방의 연약층이 터널 3차원변위 및 막장 수평변위에 미치는 영향)

  • Jeon, Je-Sung
    • Journal of the Korean Geotechnical Society
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    • v.19 no.6
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    • pp.189-206
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    • 2003
  • During tunnel excavation in urban area a systematic monitoring is important for the purpose of determination of support type and quantity, as well as for the control of stability of both surface structures and the tunnel itself due to the frequently, and in many cases, abruptly changing ground condition. In Austria absolute displacement monitoring methods have replaced relative displacement measurements by geodetic methods to a large extent. Prompt detection of weak ground ahead of the tunnel face as well as better adjustment of excavation and support to the geotechnical conditions is possible with the help of the improved methods of data evaluation on sites. Deformation response of the ground to excavation starts ahead of the tunnel face, therefore, the deformation and state of the tunnel advance core is the key factor of the whole deformation process after excavation. In other words, the rigidity and state of the advance core play a determining role in the stability of both surface structures and the tunnel itself. This paper presents the results from detailed three-dimensional numerical studies, exploring vertical displacements, vector orientations and extrusions on tunnel face during the progressive advancement for the shallow tunnel in various geotechnical conditions.

Nucleophilic Substitution Reactions of Benzyl Bromides and Benzyl Iodide with Anilines in MeOH-MeCN Mixtures (MeOH-MeCN 혼합용매계에서 브롬화벤질 및 요오드화벤질과 아닐린 사이의 친핵성 치환반응)

  • Lee, Ik-Choon;Sohn, Se-Chul;Song, Ho-Bong;Lee, Byung-Choon
    • Journal of the Korean Chemical Society
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    • v.28 no.3
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    • pp.155-162
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    • 1984
  • Kinetic studies for the nucleophilic substitution reactions of para-substituted benzyl bromides and benzyl iodide with anilines were carried out in MeOH-MeCN mixtures at 35.0$^{\circ}$C. Hammett $ {\rho}_N,\;{\rho}_C$, Bronsted $ {\beta}$ and solvatochromic correlation coefficient a, s values were determined in order to clarify the transition state variations caused by changing nucleophiles, substituents, leaving group and solvents. The results of solvatochromic equation showed that ${\pi}^{ast}$effect was a dominant factor for the reaction systems studied. It was shown that the reaction proceeds via the dissociative $S_N$2 mechanism using the potential energy surface model approach. The potential energy surface model approach however failed to account for the transition state variation due to leaving group changes. The quatum mechanical approach showed that kinetic results were consistent with proposed dissociative $S_N$2 mechanism.

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The Electrical Properties of GaN Individual Nanorod Devices by Wet-etching of the Nanorod Surface and Annealing Treatment (표면 습식 식각 및 열처리에 따른 GaN 단일 나노로드 소자의 전기적 특성변화)

  • Ji, Hyun-Jin;Choi, Jae-Wan;Kim, Gyu-Tae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.2
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    • pp.152-155
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    • 2011
  • Even though nano-scale materials were very advantageous for various applications, there are still problems to be solved such as the stabilization of surface state and realization of low contact resistances between a semiconducting nanowire and electrodes in nano-electronics. It is well known that the effects of contacts barrier between nano-channel and metal electrodes were dominant in carrier transportation in individual nano-electronics. In this report, it was investigated the electrical properties of GaN nanorod devices after chemical etching and rapid thermal annealing for making good contacts. After KOH wet-etching of the contact area the devices showed better electrical performance compared with non-treated GaN individual devices but still didn't have linear voltage-current characteristics. The shape of voltage-current properties of GaN devices were improved remarkably after rapid thermal annealing as showing Ohmic behaviors with further bigger conductivities. Even though chemical etching of the nanorod surfaces could cause scattering of carriers, in here it was shown that the most important and dominant factor in carrier transport of nano-electronics was realization of low contact barrier between nano-channel and metal electrodes surely.