• Advances in environmental research
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• 제3권1호
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• pp.29-43
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• 2014

Pharmaceutical wastewater effluents are well known for their difficult elimination by traditional biotreatment methods and their important contribution to environmental pollution due to its fluctuating and recalcitrant nature. OTC is one of the nonbiodegradable antibiotics that makes antibiotic-resistant, so it can make be high risk for environment. NZVI can be a good choice for removal of OTC in aqueous solution. Response surface methodology (RSM) was used to optimize the amounts of NZVI and OTC to be used at pH 3 and under 200 W, UV-A irradiation. The responses were removal percent of absorption at 290 and 348 nm, TOC and COD of OTC. In the optimum condition, Linear model was performed 155 ppm of OTC were removed by 1000 ppm NZVI after 6.5 hours and the removal efficiency of absorption at 290 and 348 nm, TOC and COD were 87, 95, 85 and 89 percent, respectively. In the similar process, there is no organic compound after 14 hours. The parameters ORP, DO and pH were investigated for 6:30 hours to study the type of NZVI reaction in process. In the beginning of reaction, oxidation was the dominant reaction after 3 hours, photocatalytic reaction was remarkable. The mechanism of OTC degradation is proposed by HPLC/ESI-MS and four by products were found. Also the rate constants (first order kinetic chain reaction model) were 0.0099, 0.0021, 0.0010, 0.0049 and $0.0074min^{-1}$, respectively.

• Journal of Electrochemical Science and Technology
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• 제11권4호
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• pp.411-420
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• 2020

Undesirable interfacial reactions between the cathode and sulfide electrolyte deteriorate the electrochemical performance of all-solid-state cells based on sulfides, presenting a major challenge. Surface modification of cathodes using stable materials has been used as a method for reducing interfacial reactions. In this work, a precursor-based surface modification method using Zr and Mo was applied to a LiNi_0.6Co_0.2Mn_0.2O₂ cathode to enhance the interfacial stability between the cathode and sulfide electrolyte. The source ions (Zr and Mo) coated on the precursor-surface diffused into the structure during the heating process, and influenced the structural parameters. This indicated that the coating ions acted as dopants. They also formed a homogenous coating layer, which are expected to be layers of Li-Zr-O or Li-Mo-O, on the surface of the cathode. The composite electrodes containing the surface-modified LiNi_0.6Co_0.2Mn_0.2O₂ powders exhibited enhanced electrochemical properties. The impedance value of the cells and the formation of undesirable reaction products on the electrodes were also decreased due to surface modification. These results indicate that the precursor-based surface modification using Zr and Mo is an effective method for suppressing side reactions at the cathode/sulfide electrolyte interface.

• Bulletin of the Korean Chemical Society
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• 제21권7호
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• pp.727-733
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• 2000

Analytical potential energy surfaces have been constructed for the four-center elimination of HCI from 1,1-dichloroethylene.The potential functions are Morse-type functions which are modified by appropriate switching and attenuating functions with adjustable parameters. The parameters have been found by fitting the calculated vibrational frequencies, reaction endothermicity, equlibrium geometries of the reactant and products to those of experiments and ab initio calculations. The translational energy release obtained from classical trajectory calculations on this surface is in good agreement with the experiment.

• 한국세라믹학회지
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• 제49권4호
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• pp.328-332
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• 2012

Etch rates of Si and high purity SiC have been compared for various fluorocarbon plasmas. The relative plasma resistance of SiC, which is defined as the etch rate ratio of Si to SiC, varied between 1.4 and 4.1, showing generally higher plasma resistance of SiC. High resolution X-ray photoelectron analysis revealed that etched SiC has a surface carbon content higher than that of etched Si, resulting in a thicker fluorocarbon polymer layer on the SiC surface. The plasma resistance of SiC was correlated with this thick fluorocarbon polymer layer, which reduced the reaction probability of fluorine-containing species in the plasma with silicon from the SiC substrate. The remnant carbon after the removal of Si as volatile etch products augments the surface carbon, and seems to be the origin of the higher plasma resistance of SiC.

• 한국표면공학회지
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• 제27권3호
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• pp.123-133
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• 1994

Oxidation behavior of STS 304 and 430, produced by POSCO, Korea, was studied in order to study the surface defects formed during manufacturing processes. Oxidation experiments were carried out in a preheat-ed furnace at 850~$1, 250^{\circ}C$ in air and in a simulated coke oven gas(COG) atmosphere. The reaction products were examined by XRD, SEM and EDX on their surfaces and cross sections. Protective $Cr_2O_3$-primary oxide film was formed initially, but at critical point this film was broken and a duplex scale consisting of $Fe_2O_3$- and Fe$Cr_2O_4$- was formed. It was more severely attacked in a simulated COG atmosphere than in air, and STS 304 was superior to STS 430 in oxidation resistance.

• 한국응용과학기술학회지
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• 제11권1호
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• pp.71-77
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• 1994

In order to review industrial application of amphoteric surfactants, new types of hydroxy sulfobetaine, 3-(N, N-dimethyl N-dimethyl-N-alkylammonio)-2-hydroxy-1-propane sulfonate and 3-(N, N-dimethyl N-acylammonio)-2-hydroxy-1-propane sulfonate were prepared by the reaction of quaternized sodium 1-chloro-2-hydroxy-3-propane sulfonate with N, N-dimethyl-N-alkylamine and N, N-dimethyl N-acylamido propylamine that have a straight chain radical of 12, 18 carbon atoms respectively in the presence of alkali catalyst. All the reaction products could be separated by means of column and thin layer chromatography, and the yields of all products ranged in $85{\sim}90%$, the structure of them could be confirmed from IR and $^{1}H$-NMR spectra.

• Transactions on Electrical and Electronic Materials
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• 제15권1호
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• pp.49-54
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• 2014

In this study, we carried out an investigation of the etch characteristics of silicon (Si) film, and the selectivity of Si to $SiO_2$ in $SF_6/O_2$ plasma. The etch rate of the Si film was decreased on adding $O_2$ gas, and the selectivity of Si to $SiO_2$ was increased, on adding $O_2$ gas to the $SF_6$ plasma. The optical condition of the Si film with this work was 1,350 nm/min, at a gas mixing ratio of $SF_6/O_2$ (=130:30 sccm). At the same time, the etch rate was measured as functions of the various etching parameters. The X-ray photoelectron spectroscopy analysis showed the efficient destruction of oxide bonds by ion bombardment, as well as the accumulation of high volatile reaction products on the etched surface. Field emission auger electron spectroscopy analysis was used to examine the efficiency of the ion-stimulated desorption of the reaction products.

• 한국식품저장유통학회지
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• 제18권5호
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• pp.721-728
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• 2011

Camellia oil과 palmitic, 그리고 stearic ethyl ester를 기질로 하고 Lipozyme TLIM을 촉매로 이용하여 interesterification을 통한 POS를 많이 함유한 반응물을 합성하고자 하였다. 반응 조건(반응효소비율, 반응시간, 기질의 비율)을 독립변수로 하여 중심 합성 계획에 의한 반응 표면 분석을 통하여 POS의 함량은 높이고, sn-2 position의 acyl migration을 낮추어 합성하는 최적화 조건을 얻었다. POS를 많이 함유한 반응물의 합성 최적화 조건은 반응 효소양($X_1$)= 5.9%, 반응시간($X_2$)= 60 min, 그리고 기질비율($X_3$)= 1:3(1 mole의 camellia oil: 3 mole의 palmitic ethyl ester + 3 mole의 stearic ethyl ester)이었다. 이와 같은 조건으로 획득된 실재 효소반응 합성물의 TAG-P/O/S(palmitic, stearic과 oleic 지방산을 각각 1 분자씩 어느 위치이던지 함유한 TAG, 즉 POS 및 PSO/OSP/OPS/SPO)의 합성율($Y_1$)은 20.19%이었고, 이때 acyl migration 등에 의하여 sn-2 위치에 결합(이동)한 palmitic과 stearic acid의 양(P/S-sn-2)인 $Y_2$는 12.71% 이었다.

• 한국표면공학회지
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• 제32권3호
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• pp.416-422
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• 1999

The characteristics of inductively coupled Cl$_2$/BCl$_3$ plasmas during the GaN etching were studied using plasma mass spectrometry by measuring the relative amounts of reactive ions, neutrals, and etch products. GaN etch rates increased with the increase of pressure and showed a maximum near 25mTorr for the pure $Cl_2$ and near 30mTorr for $Cl_2$$BCl_3$. The addition of$ BCl_3$ to $Cl_2$ also was increased GaN etch rates until 50%BCl$_3$ was mixed to $Cl_2$. The GaN etching with pure $Cl Cl_2$ appears to be related to the combination of Cl$_2^{+}$ ion bombardment and the chemical reaction of Cl radicals. In the case of the GaN etching with Cl$_2$/BCl$_3$, in addition to the combined effect of$_2^{ +}$ ions and Cl radicals, $_BCl2^{+ }$ ions appear to be responsible for some of GaN etching even though they do not have significant effect on the GaN etching compared to $Cl_2^{+}$ and Cl. $Ga^{+ }$ , $GaCl^{+}$ , $GaCl_2^{+}$ , and $N_2^{+}$ were observed as the positive ions of etch products, and the intensities of these etch products showed the same trends as those of GaN etch rate. Among the etch products, Ga and $N_2$ appear to be the main etch products.

• 한국환경과학회지
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• 제8권3호
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• pp.393-397
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• 1999

Among various reactions which metal sulfides can undergo in the reducing environment, the lattice exchange reaction was examined in a attempt to selectively remove heavy metal ions contained in the Fe-Coagulants acid solution. We have examined Zeta potential along with pHs to investigate surface characteristics of ${FeS}_{(s)}$. As a result of this experiment, zero point charge(ZPC) of FeS is pH 7 and zeta potential which resulted from solid solution reaction between Pb(II) and ${FeS}_{(s)}$ is similar to that of ${PbS}_{(s)}$. Solubility characteristics of ${FeS}_{(s)}$ is appeared to that dissolved Fe(II) concentration increased in less than pH 4, and also increased with increasing heavy metal concentration. Various heavy metal ions(Pb(II), Cu(II), Zn(II)) contained in Fe-coagulants acid solution were removed selectively more than ninety-five percent in the rang of pH 2.5~10 by ${FeS}_{(s)}$. From the above experiments, therefore, We could know that the products of reaction between heavy metal ions and $FeS_{(S)}$ are mental sulfide such as $PbS_{(S)}$, $CuS_{(S)}$ and $ZnS_{(S)}$.