• Transactions on Electrical and Electronic Materials
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• v.14 no.1
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• pp.12-15
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• 2013

In this study, we carried out an investigation of the etching characteristics (etch rate, and selectivity to $SiO_2$) of $ZrO_2$ thin films in a $CF_4$/Ar inductively coupled plasma (ICP) system. The maximum etch rate of 60.8 nm/min for $ZrO_2$ thin films was obtained at a 20 % $CF_4/(CF_4+Ar)$ gas mixing ratio. At the same time, the etch rate was measured as a function of the etching parameter, namely ICP chamber pressure. X-ray photoelectron spectroscopy (XPS) analysis showed efficient destruction of the oxide bonds by the ion bombardment, as well as an accumulation of low volatile reaction products on the etched surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch characteristics for the $CF_4$-containing plasmas.

• Bulletin of the Korean Chemical Society
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• v.31 no.9
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• pp.2588-2592
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• 2010

The potential energy surfaces (PESs) for the primary and secondary dissociations of the phenylarsane molecular ion (1a) were determined from the quantum chemical calculations using the G3(MP2)//B3LYP method. Several pathways for the loss of $H{\cdot}$ were determined and occurred though rearrangements as well as through direct bond cleavages. The kinetic analysis based on the PES for the primary dissociation showed that the loss of $H_2$ was more favored than the loss of $H{\cdot}$, but the $H{\cdot}$. loss competed with the $H_2$ loss at high energies. The bicyclic isomer, 7-arsa-norcaradiene radical cation, was formed through the 1,2 shift of an $\alpha$-H of 1a and played an important role as an intermediate for the further rearrangements in the loss of $H{\cdot}$ and the losses of $As{\cdot}$ and AsH. The reaction pathways for the formation of the major products in the secondary dissociations of $[M-H]^+$ and $[M-H_2]^{+\cdot}$. were examined. The theoretical prediction explained the previous experimental results for the dissociation at high energies but not the dissociation at low energies.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.217-220
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• 2001

The possibility of cerium dioxide $(CeO_2)$ thin films as insulators of metal erroelectric insulator semiconductor (MFIS) structures have been studied. The etching $CeO_2$ thin films have been perfonned in an inductively coupled $Cl_{2}/CF_{4}/Ar$ plasma. The high etch rate of the $CeO_2$ thin film was $250\AA /m$ at a 10 % addition of $Cl_2$ into the $Ar(80)/CF_{4}(20)$. The surface reaction of the etched $CeO_2$ thin films was investigated using X-ray photoelectron spectroscopy (XPS) analysis. There are Ce-Cl and Ce-F bonding by chemical reaction between Cl, F and Ce. These products can be removed by the physical bombardment of incident Ar ions.

• Transactions on Electrical and Electronic Materials
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• v.8 no.6
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• pp.229-233
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• 2007

In this study, we carried out an investigation of the etching characteristics(etch rate, selectivity) of $HfO_2$ thin films in the $CH_4/Ar$ inductively coupled plasma. It was found that variations of input power and negative dc-bias voltage are investigated by the monotonic changes of the $HfO_2$ etch rate as it generally expected from the corresponding variations of plasma parameters. At the same time, a change in either gas pressure or in gas mixing ratio result in non-monotonic etch rate that reaches a maximum at 2 Pa and for $CH_4(20%)/Ar(80%)$ gas mixture, respectively. The X-ray photoelectron spectroscopy analysis showed an efficient destruction of the oxide bonds by the ion bombardment as well as showed an accumulation of low volatile reaction products on the etched surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the $CH_4-containing$ plasmas.

• Bulletin of the Korean Chemical Society
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• v.30 no.12
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• pp.2973-2978
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• 2009

The decomposition reaction mechanism of $CH_3CF_2O$ radical formed from hydroflurocarbon, $CH_3CHF_2$ (HFC-152a) in the atmosphere has been investigated using ab-initio quantum mechanical methods. The geometries of the reactant, products and transition states involved in the decomposition pathways have been optimized and characterized at DFT-B3LYP and MP2 levels of theories using 6-311++G(d,p) basis set. Calculations have been carried out to observe the effect of basis sets on the optimized geometries of species involved. Single point energy calculations have been performed at QCISD(T) and CCSD(T) level of theories. Out of the two prominent decomposition channels considered viz., C-C bond scission and F-elimination, C-C bond scission is found to be the dominant path involving a barrier height of 12.3 kcal/mol whereas the F-elimination path involves that of a 28.0 kcal/mol. Using transition-state theory, rate constant for the most dominant decomposition pathway viz., C-C bond scission is calculated at 298 K and found to be 1.3 ${\times}$ 10$^4s{-1}$. Transition states are searched on the potential energy surfaces involving both decomposition channels and each of the transition states are characterized. The existence of transition states on the corresponding potential energy surface are ascertained by performing Intrinsic Reaction Coordinate (IRC) calculation.

• Geomechanics and Engineering
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• v.20 no.3
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• pp.233-241
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• 2020

Alkali-silica reaction (ASR) is among one of the most important damaging mechanisms in concrete, depending primarily on aggregates which contain reactive minerals. However, expansion in concrete may not directly relate to the reactive minerals. This study aims to investigate the influence of ASR and the expansion of mortar bars depending on aggregate type containing various components such as quartz, clay minerals (montmorillonite and kaolinite) and micas (muscovite and biotite). In this study, the accelerated mortar bar tests (AMBT) were performed in two conditions (mortar bars in the same and sole NaOH solutions). Petrographic thin section studies, X-ray diffraction (XRD) analysis (Rietveld method), scanning electron microscopy (SEM) and chemical analyses were carried out. This study showed that quartzite bars led to increase in expansion values of mortar bars in diabase-1 and andesite when these were in the same NaOH solution. However, three samples (basalt, quartzite and claystone) were found having ASR expansion based on the AMBT when the special molds were used for each sample. SEM study revealed that samples which exhibit highest expansions according to AMBT had a generally rough surface and acicular microstructures in or around the micro-cracks. Basalt and quartzite showed more variable in major oxides than those of other samples based on the chemical analyses, SEM studies and AMBT. This study revealed that the highest expansions were observed to source not only from reactive aggregates but also from alteration products (silicification, chloritization, sericitization and argillisation), phyllosilicates (muscovite, biotite and vermiculite) and clays (montmorillonite and kaolinite).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.217-220
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• 2001

The possibility of cerium dioxide (CeO$_{7}$ ) thin films as insulators of metal erroelectric insulator semiconductor (MFIS) structures have been studied. The etching CeO$_2$ thin films have been performed in an inductively coupled C1$_2$/CF$_4$/Ar plasma. The high etch rate of the CeO$_2$ thin film was 250 ${\AA}$/m at a 10% addition of Cl$_2$ into the Ar(80)/CF$_4$(20). The surface reaction of the etched CeO$_2$ thin films was investigated using X-ray photoelectron spectroscopy (XPS) analysis. There are Ce-Cl and Ce-F bonding by chemical reaction between Cl, F and Ce. These products can be removed by the physical bombardment of incident Ar ions.

• Journal of Powder Materials
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• v.6 no.3
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• pp.215-223
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• 1999

The synthesis of $Ni_5Si_2,\;Ni_2Si$ and NiSi has been investigated by mechanical alloying (MA) of Ni-27.9at%Si, Ni-33.3at%Si and Ni-50.0at%Si powder mixtures. As-received and premilled elemental powders were subjected to MA. The as-received Ni powder was spherical and the mean particle size 48.8$\mu$m, whereas the premilled Ni powder was flaky and the mean particle diameter and thickness were found to be 125 and 5$\mu$m, respectively. The mean surface area of the premilled Mi powder particle was 3.5 times as large as that of the as-received Ni powder particle. The as-received Si powder was was 10.0$\mu$m. Self-propagating high-temperature synthesis (SHS) reaction, followed by a slow reaction (a solid state diffusion), was observed to produce each Ni silicide during MA of the as-received elemental powders. In other word , the reactants and product coexisted for a long period of MA of time. Only SHS reaction was, however, observed to produce each Ni silicide during MA of the premilled elemental powders, indicating that each Ni sillicide formed rather abruptly at a short period of MA time. The mechanisms and reaction rates for the formation of the Ni silicides appeared to be influenced by the elemental powder particle size and shape as well as the heat of formation of the products $(Ni_5Si_2$longrightarrow-43.1kJ/mol.at., $Ni_2Si$$\rightarrow$-47.6kJ/mol.at.).

• Transactions of the Korean hydrogen and new energy society
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• v.22 no.1
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• pp.51-59
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• 2011

Sulfur-Iodine (SI) cycle, which thermochemically splits water to hydrogen and oxygen through three stages of Bunsen reaction, HI decomposition, and $H_2SO_4$ decomposition, seems a promising process to produce hydrogen massively. Among them, the decomposition of $H_2SO_4$ ($H_2SO_4=H_2O+SO_2+1/2O_2$) requires high temperature heat over $800^{\circ}C$ such as the heat from concentrated solar energy or a very high temperature gas-cooled nuclear reactor. Because of harsh reaction conditions of high temperature and pressure with extremely corrosive reactants and products, there have been scarce and limited number of data reported on the pressurized $H_2SO_4$ decomposition. This work focuses whether the $H_2SO_4$ decomposition can occur at high pressure in a noble-metal reactor, which possibly resists corrosive acidic chemicals and possesses catalytic activity for the reaction. Decomposition reactions were conducted in a Pt-lined tubular reactor without any other catalytic species at conditions of $800^{\circ}C$ to $900^{\circ}C$ and 0 bar (ambient pressure) to 10 bar with 95 wt% $H_2SO_4$. The Pt-lined reactor was found to endure the corrosive pressurized condition, and its inner surface successfully carried out a catalytic role in decomposing $H_2SO_4$ to $SO_2$ and $O_2$. This preliminary result has proposed the availability of noble metal-lined reactors for the high temperature, high pressure sulfuric acid decomposition.

• Journal of Powder Materials
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• v.16 no.6
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• pp.431-437
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• 2009

Various inorganic fillers improve the thermal conductivity and physical properties of organic products. Alumina has been used a representative filler in the heat radiation sheet for the heat radiation of electric device. The high filling rate of alumina increases the thermal conductivity and properties of products. We successfully developed the spherical alumina by flame fusion process using the oxygen burner with LPG fuel. In the high temperature flame (2500$\sim$3000$^{\circ}C$) of oxygen burner, sprayed powders were melting and then rotated by carrier gas. This surface melting and rotation process made spherical alumina. Especially effects of chemical composition and particle size of stating materials on the melting behavior of starting materials in the flame and spheroidization ratio were investigated. As a result, spheroidization ratio of boehmite and aluminum hydroxide with endothermic reaction of dehydration process was lower than that of the sintered alumina without dehydration reaction.