• 한국표면공학회지
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• 제32권2호
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• pp.172-181
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• 1999

The effect of the DMAB concentration, temperature, deposition time, and stabilizer concentration on the precipitation reaction of the electroless nickel plating using dimethylamine borane (DMAB) as reducing agent was investigated to by the weight gain and electrochemical method. The deposition rate was dependent with DMAB concentration. The polarization resistance of the precipitation reaction was reduced with DMAB concentration. The precipitation reaction rate of Ni-B deposits was controlled by the oxidation rate of DMAB as the source of electron. The boron content of the deposit was constant at about 5.5wt%, even when DMAB concentration in the solution was increased. The effect of temperature and stabilizer ($Pb(NO_3)_2$) concentration on deposition rate was shown to have co-dependent behaviors.

• 한국표면공학회지
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• 제22권3호
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• pp.118-127
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• 1989

The rate of electrodeposition Zinc-nickel alloy on to electrolytic ione in sulface solution both under an inter and air atmospherss has studied by use of a rotating disc geometry. The kinetics shows 1st order reaction, and the rate constants are proportional to the square root of rpm, however, they are less than the valuse suggested by Levich. The rate constants of zinc deposition approach the total mass transfer rate constants with increasing potential and deviate with increasing rotaing speed, but those of nickel deposition are constant. Below $40^{\circ}C$ the activation engrgies of zinc deposition and nikel deposition were 4.4Kcal/mol and 6.3Kcal/mol respectively. There results show that overall reaction rate of zinc-nickel plaeting is controlled by mixed reaction and zinc deposotion is more affected by mass transfer reaction than nickel. The current density for the zinc-nickel plating was less in an air atmosphere than in a nitrogen atmosphere. The cathode efficiency increased with decreasing cathode rotating speeds, potentials, and increasing temperatures. Zzinc-nickel platings are more improved in microhardnss than zinc platings.

• 대한환경공학회지
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• 제38권5호
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• pp.242-248
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• 2016

연료전지에서의 전체 반응 속도는 산화전극에서 일어나는 수소산화반응에 비해 그 반응 속도가 현저히 느린 환원전극에서의 산소환원반응(oxygen reduction reaction, ORR)에 의해 결정된다. ORR 효율성 평가를 용이하게 하는 지표(descriptor)로서 촉매 표면에서의 산소원자 흡착강도를 활용하는데, 산소흡착강도는 촉매 표면의 기하학적 구조 변형에 따른 전자구조를 변형함으로써 조절할 수 있다. 이에 본 연구에서는 백금 표면의 원자모델을 이용하여 표면의 기하학적 구조가 산소흡착강도에 미치는 영향과 그 원인을 밀도범함수이론(density functional theory, DFT) 계산을 통해 분석하였다. 먼저, 기하학적 구조를 인위적으로 변형시킨 Pt(111) 표면에서의 산소흡착반응을 밀도범함수이론 계산을 이용해 분석함으로써 기하학적 구조변화가 산소흡착강도에 미치는 영향(strain effect)을 확인하였다. 최적화한 Pt 격자상수($3.977{\AA}$)에 ${\pm}1%$ 간격의 변화율을 적용하고 각 변화율마다의 산소흡착강도를 계산하였는데, Pt-Pt 원자 간 거리가 멀어질수록 산소흡착강도가 강해지는 것을 확인하였다. 이는 원자 간 거리가 증가할수록 d-band center가 페르미 준위(Fermi level)쪽으로 이동하게 되며, 이로써 일부 반결합 오비탈(anti-bonding orbitals)에 전자가 채워지지 않기 때문에 전체적으로 반결합 오비탈이 형성될 가능성이 적어지기 때문이다. 결과적으로, 순수한 백금이 가진 격자상수($3.9771{\AA}$) 보다 약 2~4% 작은 백금 표면 격자크기를 가질 수 있도록 유도할 수 있다면 산소흡착강도가 적절히 약하게 조절될 수 있으며, 이는 순수한 백금보다 더 향상된 ORR 성능을 가진 촉매물질 개발 연구를 위한 기초자료로서 활용할 수 있을 것이다.

• 한국표면공학회지
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• 제23권4호
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• pp.197-207
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• 1990

Atomic layer epitaxy is a relatively new epitaxial pprocess chracterized by the alternate and separate exposure of a susbstrate surface to the reactants contaning the constituent element of a compound semicoductror. The ideal ALE is expected to provide sevral advantageous as petcts for growing complicated heterostrutures such as relativly easy controls of the layer thinkness down to a monolayer and in forming abrupt heterointerfaces though monolayer self-saturatio of the growth. In addition, since ALE is stongly dependent on the surface reaction, the growth can also be controlled by photo-excitation which provides activation can be energies for each step of the reaction paths. The local growth acceleration by photo-excitation can be exploited for growing several device strures on the same wafer, which provides another important practical advantage. The ALE growth of GaAs has advanced to the point the laser opertion has been achieved from AlGs/GaAs quantun well structures where thee active layers were grown by thermal and Ar-laser assisted ALE. The status of the ALE growth of GaAs and other III-V compounds will be reviewed with respect to the growth saturation behavior and the electrical properties of the grown crystals.

• 한국표면공학회지
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• 제21권4호
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• pp.160-167
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• 1988

Electrochemical behaviors od chromium electrodeposition from 0.05M chromium (III) sulface complexes in aqueous solutions using sodium formate-glycine mixtures as a complexing agent were studied. In the cathodic current-potential cures, it is found that the intial limiting current of Cr(III) is proportional to square root of scan rate and activiation energy from Arrhenius plot is s obtained 3.05Kcal/mol. From this results, the reaction is considered, Cr3++e longrightarrow Cr2+, which is controlled diffusion of Cr (III). It is also found that the chromium is deposited when the potential reaches to hydrogen evolution potential. Effects of NaSCN as a catalyser in the electrolyte were investigated NCS- anion seems to react strongly by specific absorption at the inner HelmholtZ layer, so that, it is considered to suppress the electrodeposition reaction reaction for chromjum, and also it is considered multipe-bridge such as Cr(III)-NCS---M(M;cathode).

• 공업화학
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• 제25권2호
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• pp.198-203
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• 2014

본 연구에서는 Ni metal foam 플레이트의 수증기 개질반응 및 표면 특성을 조사하였다. 전처리를 통하여 Ni의 산화상태를 변화시킬 수 있었으며, 활성 site로서 표면에 노출된 metallic Ni 종은 수증기 개질 반응활성에 중요한 역할을 한다. 또한 Ni metal foam 플레이트의 기공제어 및 촉매 기능을 부여하기 위하여 Ni metal foam 플레이트와 Ni-YSZ 촉매를 혼합하여 다공성 촉매 분리막을 제조하였다. SEM 분석 결과 metal foam 플레이트의 기공을 제어할 수 있었으며, 표면에 Ni-YSZ 촉매는 고르게 잘 분포되어 있었다. Ni 기반 다공성 촉매 분리막은 공간속도에 상관없이 상용촉매와 유사한 수증기 개질 활성을 가진다.

• 대한화학회지
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• 제63권1호
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• pp.45-50
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• 2019

Because arsenic (As) is a chemical substance toxic to humans, there have been extensive investigations on the development of As detection methods. In this study, the electrochemical determination of As on nanoporous gold (NPG) electrodes was investigated using anodic stripping voltammetry. The electrochemical surface area of the NPG electrodes was controlled by changing the reaction times during the anodization of Au for NPG preparation, and its effect on the electrochemical behavior during As detection was examined. The detection efficiency of the NPG electrodes improved as the roughness factor of the NPG electrodes increased up to around 100. A further increase in the surface area of the NPG electrodes resulted in a decrease of the detection efficiency due to high background current levels. The most efficient As detection efficiency was obtained on the NPG electrodes prepared with an anodization time of 50 s. The effects of the detection parameters and of the Cu interference in As detection were investigated and the NPG electrode was compared to flat Au electrodes.

• 전기화학회지
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• 제10권1호
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• pp.1-6
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• 2007

금 나노 입자를 회합시킨 흑연전극 표면에 mercaptopropionic acid(mpa)를 사용하여 자기조립 단층막(self-assembled monolayer: SAMs)을 생성시키고 이어서 도파민(dopa)과의 짝지움 반응을 통하여 Gr(Au)/mpa-dopa형의 수식된 전극을 제작하여 NADH의 전기촉매 산화반응에 적용하였다. 이 수식 전극이 전자전달반응속도와 반응과정에 대하여 연구하였다. 전극 표면에 고정된 도파민이 NADH와 이차반응 속도상수는 회전 전극법으로 0.1 M 인산염 완충용액(pH=7.0)에서 결정하였으며 그 값이 $5.06{\times}10^5M^{-1}s^{-1}$였고, $EC_{cat}$ 및 전자전달이 지배적인 과정이었다. 그러나 반응초기 즉, $10^{-3}s$ 이내에서는 이 전극에서 확산에 영향을 받으며 그 때 확산계수는 $4.64{\times}10^{-4}cm^2s^{-1}$이다.

• 산업기술연구
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• 제2권
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• pp.13-19
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• 1982

Polycrystalline silicon layers have been deposited by a chemical vapor deposition technique using $SiCl_4$, $H_2$ gas mixture on single crystal silicon substrates. In this work, the effects of depostion temperature and total flow rate on the deposition rate of polycrystalline silicon are investigated. From the experimental results it was found that the formation reaction of polycrystalline silicon was limited by surface reaction and mass transfer controlled as the deposition temperature was increased. The morphology of polycrystalline silicon layer changed from a fine structure to a coarse one as the deposition temperature was increased.

• 한국표면공학회지
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• 제26권1호
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• pp.3-9
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• 1993

Chemical vapor deposited tungsten films were formed in a cold wall reactor at pressures higher (10~120torr) than those conventionally employed (<1torr). SiH4, in addition to H2, was used as the reduction gas. The effects of pressure and reaction temperature on the deposition rate and morphology of the films were ex-amined under the above conditions. No encroachment or silicon consumption was observed in the tungsten de-posited specimens. A high deposition rate of tungsten and a good step coverage of the deposited films were ob-tained at 40~80 torr and at a temperature range of $360~380^{\circ}C$. The surface roughness and the resistivity of the deposited film increased with pressure. The deposition rate of tungsten increased with the total pressure in the reaction chamber when the pressure was below 40 torr, whereas it decreased when the total pressure ex-ceedeed 40 torr. The deposition rate also showed a maximum value at $360^{\circ}C$ regardless of the gas pressure in the chamber. The results suggest that the deposition mechanism varies with pressure and temperature, the surface reac-tion determines the overall reaction rate and (2) at higher pressures(>40 torr) or temperatures(>36$0^{\circ}C$), the rate is controlled by the dtransportation rate of reactive gas molecules. It was shown from XRD analysis that WSi2 and metastable $\beta$-W were also formed in addition to W by reactions between WF6 and SiH4.