• Proceedings of the Materials Research Society of Korea Conference
• /
• 2009.05a
• /
• pp.22.2-22.2
• /
• 2009

Currently, metal silicides become increasingly more essential part as a contact material in complimentary metal-oxide-semiconductor (CMOS). Among various silicides, NiSi has several advantages such as low resistivity against narrow line width and low Si consumption. Generally, metal silicides are formed through physical vapor deposition (PVD) of metal film, followed by annealing. Nanoscale devices require formation of contact in the inside of deep contact holes, especially for memory device. However, PVD may suffer from poor conformality in deep contact holes. Therefore, Atomic layer deposition (ALD) can be a promising method since it can produce thin films with excellent conformality and atomic scale thickness controllability through the self-saturated surface reaction. In this study, Ni thin films were deposited by thermal ALD using bis(dimethylamino-2-methyl-2-butoxo)nickel [Ni(dmamb)2] as a precursor and NH3 gas as a reactant. The Ni ALD produced pure metallic Ni films with low resistivity of 25 $\mu{\Omega}cm$. In addition, it showed the excellent conformality in nanoscale contact holes as well as on Si nanowires. Meanwhile, the Ni ALD was applied to area-selective ALD using octadecyltrichlorosilane (OTS) self-assembled monolayer as a blocking layer. Due to the differences of the nucleation on OTS modified surfaces toward ALD reaction, ALD Ni films were selectively deposited on un-coated OTS region, producing 3 ${\mu}m$-width Ni line patterns without expensive patterning process.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2005.10a
• /
• pp.506-508
• /
• 2005

In general, organic TFTs are comprised of four components: gate electrode, gate dielectric, organic active semiconductor layer, and source and drain contacts. The TFT current, in turn, is typically determined by channel length and width, carrier field effect mobility, gate dielectric thickness and permittivity, contact resistance, and biasing conditions. More recently, a number of techniques and processes have been introduced to the fabrication of OTFT circuits and displays that aim specifically at reduced fabrication cost. These include microcontact printing for the patterning of metals and dielectrics, the use of photochemically patterned insulating and conducting films, and inkjet printing for the selective deposition of contacts and interconnect pattern. In the fabrication of organic TFTs, microcontact printing has been used to pattern gate electrodes, gate dielectrics, and source and drain contacts with sufficient yield to allow the fabrication of transistors. We were fabricated a pentacene OTFTs on flexible PEN film. Au/Cr was used for the gate electrode, parylene-c was deposited as the gate dielectric, and Au/Cr was chosen for the source and drain contacts; were all deposited by ion-beam sputtering and patterned by microcontact printing and lift-off process. Prior to the deposition of the organic active layer, the gate dielectric surface was treated with octadecyltrichlorosilane(OTS) from the vapor phase. To complete the device, pentacene was deposited by thermal evaporation and patterned using a parylene-c layer. The device was shown that the carrier field effect mobility, the threshold voltage, the subthreshold slope, and the on/off current ratio were improved.

• Membrane Journal
• /
• v.31 no.3
• /
• pp.170-183
• /
• 2021

Fouling has continued to be a problem that hinders the effectiveness of membrane properties. To solve this problem of reducing fouling effects on membrane surface properties, different and innovative types of membrane patterning has been proposed. This article reviews on the progress of patterned membranes and their separation process concerning the fouling effects of membranes. The types of separation processes that utilize the maximum effectiveness of the patterned membranes include nanofiltration (NF), reverse osmosis (RO), microfiltration (MF), ultrafiltration (UF), and pervaporation (PV). Using these separation processes have shown and prove to have a major effect on reducing fouling effects, and in addition, they also add beneficial properties to the patterned membranes. Each patterned membrane and their separation processes gave notable results in threshold towards flux, salt rejections, hydrophilicity and much more, but there are also some unsolved cases to be pointed out. In this review, the effects of patterned membrane for separation processes will be discussed.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2005.06a
• /
• pp.1206-1209
• /
• 2005

In recent, injection molding process for features in sub-micron scale is under active development as patterning nano-scale features, which can provide the master or stamp for molding, and becomes available around the world. Injection molding has been one of the most efficient processes for mass production of the plastic product, and this process is already applied to nano-technology products successfully such as optical storage media like DVD or BD which is a large area plastic thin substrate with nano-scale features on its surface. Bio chip for like DNA sequencing may be another application of this plastic substrate. The DNA can be sequenced using order of 100 nm pore structure when making the DNA flow through the pore structure. Agarose gel and silicon based chip have been used to sequence the DNA, but injection molded plastic chip may have benefit in terms of cost. This plastic DNA sequencing chip has plenty of pillars in order of 100 nm in diameter on the substrate. When the usual features in case of DVD or BD have very low aspect ratio, even less than 0.5, but the DNA chip will have relatively high aspect ratio of about 2. It is not easy to injection mold the large area thin substrate with sub-micron features on its surface due to the characteristics of the molding process and it becomes much more difficult when the aspect ratio of the features becomes high. We investigated the effect of the molding parameters for injection molding with high aspect ratio nano-scale features and injection molded some plastic DNA sequencing chips. We also fabricated PR masters and Ni stamps of the DNA chip to be used for molding

• Journal of Korean Association for Spatial Structures
• /
• v.12 no.1
• /
• pp.109-119
• /
• 2012

For membrane structure, there are three main steps in design and construction, which are form finding, statistical load analysis, and cutting patterning. Unlike the first two stages, the step of cutting pattern involves the translation of a double-curved surface in 3D space into a 2D plane with minimal error. For economic reasons, the seam lines of generated cutting patterns rely greatly on the geodesic line. Generally, as searching regions of the seam line are plane elements in the step of shape analysis, the seam line is not a smooth curve, but an irregularly divided straight line. So, it is how we make an irregularly divided straight line a smooth curve that defines the quality of the pattern. Accordingly, in this paper, we analyzed interpolation schemes using spline, and apply these methods to cutting pattern generation on the curved surface. To generate the pattern, three types of spline functions were used, i.e., cubic spline function, B-spline, and least-square spline approximation, and simple model and the catenary-shaped membrane was adopted to examine the result of generation. The result of comparing the approximation curves by the number of elements and the number of extracted nodes of simple model revealed that the seam line for less number of extracted nodes with large number of elements were more efficient, and the least-square spline approximation provided smoother seam line than other methods.

• Applied Chemistry for Engineering
• /
• v.21 no.4
• /
• pp.411-416
• /
• 2010

In this research, we intended to improve the tolerance of thick film resistor using photosensitive polymer resistor paste which was fabricated with alkali-solution developable photosensitive resin and conductive carbon black. At first, we investigated the effect of the selection of carbon black and photosensitive resin on the resistance range and tolerance level of polymer thick film resistor (PTFR). And then, a difference in resistance tolerance was evaluated according to the coating methods of photosensitive resistor paste on test board. In case that the photosensitive resistor paste was coated on whole surface of test board using screen printing, large positional tolerance was obtained because the formation of the thick film with uniform thickness was difficult. On the other hand, when the paste was coated with roller, the resistive thick film with uniform thickness was formed on the whole board area and the result of resistance evaluation showed low tolerance in ${\pm}10%$ range. The tolerance of PTFR could be improved by combination of the precise patterning using photo-process and the coating process for the resistive thick film with uniform thickness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.269-270
• /
• 2009

The biased vertical alignment (BVA) liquid crystal (LC) mode shows a has a distinct advantage of lower manufacture cost due to the elimination of a lithographic process step to form either ITO-patterning or protrusions on the color-filter substrates. However, those devices have complex voltage conditions which is the respective induce voltage on common electrode, pixel electrode and bias electrode when positive and negative frame. In order to overcome the complex voltage condition, the pretilt angles is controlled by photo polymerization of the UV-curable reactive mesogen (RM). According to our studies, voltages to the cell are critical to achieve an optimized surface-modified quality BVA (Q-BVA) mode which provides the well defined reorientation of the LCs with respect to an electric field.

• Applied Microscopy
• /
• v.39 no.2
• /
• pp.89-99
• /
• 2009

To investigate the morphological characteristics of spermatozoa of the grey red-blacked vole (Clethrionomys rufocanus) belongings to the subfamily Cricetinae, subgenus Clethrionomys were examined by scanning and transmission electron microscopes. The sperm head of C. rufocanus was an ax or hatchet in shape with a curved single dorsal hook. The total length of C. regulus sperm was 95.8 ${\mu}m$. The length of sperm head was 7.8 ${\mu}m$, and the tail (88.0 ${\mu}m$) consisted of four major segments: the neck (1.0 ${\mu}m$), middle piece (22.0 ${\mu}m$), and principal piece plus end piece (65.0 ${\mu}m$), respectively. The segmented columns were about 10~12 in number. The number of gyres of mitochondria ranged from about 170 to 178. The post-nuclear cap occupied about a half of nucleus. The equatorial segment is located between the post-nuclear cap segment and acrosomal cap on the nuclear surface. Nos. 1, 5 and 6 of the outer dense fibers were larger than the others. A fibrous sheath and longitudinal column of the principal piece were in evidence, but the fibrous sheath was not seen at the end piece. In conclusion, the morphological structures of sperm head and tail may be useful information to patterning of sperm evolution and classifying of species.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.418-418
• /
• 2008

The electrochemical etching of silicon in HF-based solutions is known to form various types of porous structures. Porous structures are generally classified into three categories according to pore sizes: micropore (below 2 nm in size), mesopore (2 ~ 50 nm), and macropore (above 50 nm). Recently, the formation of macropores has attracted increasing interest because of their promising characteristics for an wide scope of applications such as microelectromechanical systems (MEMS), chemical sensors, biotechnology, photonic crystals, and photovoltaic application. One of the promising applications of macropores is in the field of MEMS. Anisotropic etching is essential step for fabrication of MEMS. Conventional wet etching has advantages such as low processing cost and high throughput, but it is unsuitable to fabricate high-aspect-ratio structures with vertical sidewalls due to its inherent etching characteristics along certain crystal orientations. Reactive ion dry etching is another technique of anisotropic etching. This has excellent ability to fabricate high-aspect-ratio structures with vertical sidewalls and high accuracy. However, its high processing cost is one of the bottlenecks for widely successful commercialization of MEMS. In contrast, by using electrochemical etching method together with pre-patterning by lithographic step, regular macropore arrays with very high-aspect-ratio up to 250 can be obtained. The formed macropores have very smooth surface and side, unlike deep reactive ion etching where surfaces are damaged and wavy. Especially, to make vertical microwire or nanowire arrays (aspect ratio = over 1:100) on silicon wafer with top-down photolithography, it is very difficult to fabricate them with conventional dry etching. The electrochemical etching is the most proper candidate to do it. The pillar structures are demonstrated for n-type silicon and the formation mechanism is well explained, while such a experimental results are few for p-type silicon. In this report, In order to understand the roles played by the kinds of etching solution and mask patterns in the formation of microwire arrays, we have undertaken a systematic study of the solvent effects in mixtures of HF, dimethyl sulfoxide (DMSO), iso-propanol, and mixtures of HF with water on the structure formation on monocrystalline p-type silicon with a resistivity with 10 ~ 20 $\Omega{\cdot}cm$. The different morphological results are presented according to mask patterns and etching solutions.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2010.06a
• /
• pp.79-79
• /
• 2010

Semimetallic bismuth (Bi) has been extensively investigated over the last decade since it exhibits very intriguing transport properties due to their highly anisotropic Fermi surface, low carrier concentration, long carrier mean free path l, and small effective carrier mass $m^*$. In particular, the great interest in Bi nanowires lies in the development of nanowire fabrication methods and the opportunity for exploring novel low-dimensional phenomena as well as practical application such as thermoelectricity[1]. In this work, we introduce a self-assembled interconnection of nanostructures produced by an on-film formation of nanowires (OFF-ON) method in order to form a highly ohmic Bi nanobridge. A Bi thin film was first deposited on a thermally oxidized Si (100) substrate at a rate of $40\;{\AA}/s$ by radio frequency (RF) sputtering at 300 K. The sputter system was kept in an ultra high vacuum (UHV) of $10^{-6}$ Torr before deposition, and sputtering was performed under an Ar gas pressure of 2m Torr for 180s. For the lateral growth of Bi nanowires, we sputtered a thin Cr (or $SiO_2$) layer on top of the Bi film. The Bi thin films were subsequently put into a custom-made vacuum furnace for thermal annealing to grow Bi nanowires by the OFF-ON method. After thermal annealing, the Bi nanowires cannot be pushed out from the topside of the Bi films due to the Cr (or $SiO_2$) layer. Instead, Bi nanowires grow laterally as a mean s of releasing the compressive stress. We fabricated a self-assembled Bi nanobridge (d=192 nm) device in-situ using OFF-ON through annealing at $250^{\circ}C$ for 10hours. From I-V measurements taken on the Bi nanobridge device, contacts to the nanobridge were found highly ohmic. The quality of the Bi nanobridge was also proved by the high MR of 123% obtained from transverse MR measurements. These results manifest the possibility of self-assembled nanowire interconnection between various nanostructures for a variety of applications and provide a simple device fabrication method to investigate transport properties on nanowires without complex patterning and etching processes.