• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.125.2-125.2
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• 2016

Semiconductor nanowires are essential building blocks for various nanotechnologies including energy conversion, optoelectronics, and thermoelectric devices. Bottom-up synthetic approach utilizing metal catalyst and vapor phase precursor molecules (i.e., vapor - liquid - solid (VLS) method) is widely employed to grow semiconductor nanowires. Al has received attention as growth catalyst since it is free from contamination issue of Si nanowire leading to the deterioration of electrical properties. Al-catalyzed Si nanowire growth, however, unlike Au-Si system, has relatively narrow window for stable growth, showing highly tapered sidewall structure at high temperature condition. Although surface chemistry is generally known for its role on the crystal growth, it is still unclear how surface adsorbates such as hydrogen atoms and the nanowire sidewall morphology interrelate in VLS growth. Here, we use real-time in situ infrared spectroscopy to confirm the presence of surface hydrogen atoms chemisorbed on Si nanowire sidewalls grown from Al catalyst and demonstrate they are necessary to prevent unwanted tapering of nanowire. We analyze the surface coverage of hydrogen atoms quantitatively via comparison of Si-H vibration modes measured during growth with those obtained from postgrowth measurement. Our findings suggest that the surface adsorbed hydrogen plays a critical role in preventing nanowire sidewall tapering and provide new insights for the role of surface chemistry in VLS growth.

• Journal of Ocean Engineering and Technology
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• v.10 no.1
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• pp.53-64
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• 1996

In this paper, rotating bending fatigue tests have been carried out to investigate the growth behabiors of surface fatigue crack initiated from a small artificial surface defect, that might exist in real structures, on 2024-T3 and 6:4 brass. The test results are analysed in the viewpoints of both strength of materials and fracture mechanics, it can be concluded as follows. The effect of a small artificial surface defect upon the fatigue strength is very large. The sensitivity of 2024-T3 on the defect is higher than that of 6:4 brass. The growth behavior of the surface fatigue crack of 2024-T3 is different from that of 6:4 brass. The growth rate of the surface fatigue crack of 2024-T3 is considerably rapid in the early stage of the fatigue life and apt to decrease in the later stage. It was impossible to establish a unifying approach in the analysis of crack growth begabior of 2024-T3 and 6:4 brass using the maximum stress intensity factor because of their dependence on stress level. But if the elastic strain and cyclic total strain intensity factor range were applied to obtain the growth rate of surface fatigue cracks of the materials, the data were found to be nearly coincided.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.60-60
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• 2015

Nanosheets of graphene and related 2D materials have attracted much attention due to excellent physical, chemical and mechanical properties. Single-layer graphene (SLG) was first synthesized by Blakely et al in 1974 [1]. Following his achievements, we initiated the growth and characterization of graphene and h-BN on metal substrates using surface segregation and precipitation in 1980s [2,3]. There are three important steps for nanosheet growth; surface segregation of dopants, surface reaction for monolayer phase, and subsequent 3-D growth (surface precipitation). Surface phase transition was clearly demonstrated on C-doped Ni(111) by in situ XPS at elevated temperatures [4]. The growth mode was clarified by inelastic background analysis [5]. The surface segregation approach has been applied to C-doped Pt(111) and Pd(111), and controllable growth of SLG has been demonstrated successfully [6]. Recently we proposed a promising method for producing SLG fully covering an entire substrate using Ni films deposited on graphite substrates [7]. A universal method for layer counting has been proposed [8]. In this paper, we will focus on the effect of competitive surface-site occupation between carbon and other surface-active impurities on the graphene growth. It is known that S is a typical impurity of metals and the most surface-active element. The surface sites shall be occupied by S through surface segregation. In the case of Ni(110), it is confirmed by AES and STM that the available surface sites is nearly occupied by S with a centered $2{\times}2$ arrangement. When Ni(110) is doped with C, surface segregation of C may be interfered by surface active elements like S. In this case, nanoscopic characterization has discovered a preferred directional growth of SLG, exhibiting a square-like shape (Fig. 1). Also the detailed characterization methodologies for graphene and h-BN nanosheets, including AFM, STM, KPFM, AES, HIM and XPS shall be discussed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.2 no.1
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• pp.1-9
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• 1992

Radiation heat transfer was calculated for initial stage of crystal growth in Czochralski crystal growth system. View factors among surface elements were calculated for the estimation of heat evolution and all the surfaces were assumed to be diffuse-gray. The values of view factors were greatly different along the position of surface elements. The dissipated amounts of heat flux from the melt surface were 3.6 times larger than those from the crystal surface at the initial stage of crystal growth and this amounts were greater when the surface elements were not considered. The trijunction part of the crystal was greatly affected by the melt surface near the crystal. Consequently radiation heat transfer between surface elements must be considered in order to correctly simulate the initial crystal growth.

• Journal of the Korean Ceramic Society
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• v.43 no.11 s.294
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• pp.728-733
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• 2006

The equilibrium or growth shape of ceramic materials is classified largely into two categories according to the thermodynamic conditions imposed. One is a polyhedral shape where the surface free energy is anisotropic, and the other a spherical shape where the surface free energy is isotropic. In the case of grains with a polyhedral shape of anisotropic surface free energy, socalled abnormal grain growth usually takes place due to a significant energy barrier for a growth unit to be attached to the crystal surface. In the case of grains with a spherical shape of isotropic surface free energy, however, normal grain growth with a uniform size distribution takes place. In this contribution, the state-of-the-art of our current understanding of the relationship between the crystal shape and the microstructure evolution during the sintering of ceramic materials in the presence of a liquid phase was discussed.

• Transactions of the Korean Society of Mechanical Engineers
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• v.12 no.4
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• pp.781-789
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• 1988

The fatigue crack growth and crack closure behavior of long through-thickness cracks and small half-penny shaped surface cracks were investigated in 5083-H113 Aluminum alloy under constant amplitude testing by the unloading elastic compliance method. It was found that, in the Region II, the crack growth behavior of both through-thickness and surface cracks exhibited the tri-linear form with two transitions and no concern with stress ratio R. In the Region I $I_{ab}$ and I $I_{b}$, through-thickness cracks grew faster than surface cracks in length direction, but at .DELTA. K .leq.4 MPa.root.m for R=0.1 the growth rates of surface cracks in depth direction, grew faster than those of through-thickness cracks. When the crack closure was considered, the growth rates of through-thickness cracks lay between the growth rates of depth direction and the growth rates of length direction in surface cracks. It is suspected that this was caused by the difference of crack closure at depth and length direction of surface cracks.s.

• Journal of the Korean institute of surface engineering
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• v.50 no.1
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• pp.10-16
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• 2017

This article reports for the first time on the lateral growth of PEO (plasma electrolytic oxidation) films on Al1050 alloy by the application of anodic pulse current in an alkaline electrolyte. Generation of microarcs was observed at the edges initially and then moved towards the central region with PEO treatment time. Disc type PEO film islands with about $20{\mu}m$ diameter were formed first and they grew laterally by the formation of new disc type PEO films at the edge of pre-formed PEO islands. The PEO film islands were found to be interconnected completely and form a continuous PEO film when generation of small size microarcs are terminated at the central part of the specimen, resulting in very smooth surface with low surface roughness less than $1{\mu}m$ of $R_a$. Further PEO treatment after the complete interconnection of PEO films islands showed local thickening of PEO films by vertical growth. It is concluded that very smooth PEO film surface can be obtained by lateral growth mechanism rather than vertical growth of them.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.399-406
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• 1996

The orientational cross-over phenomena in an RF sputtering growth of TiN films were studied in an in-situ, real-time synchrotron x-ray scattering experiment. For the films grown with pure Ar sputtering gas, the cross-over from the more strained (002)-oriented grains to the less strained (111)-oriented grains occurred as the film thickness was increased. As the sputtering power was increased, the cross-over thickness, at which the growth orientation changes from the <002> to the <111> direction, was decreased. The addition of $N_2$ besides Ar as sputtering gas suppressed the cross-over, and consequently resulted in the (002) preferred orientation without exhibiting the cross-over. We attribute the observed cross-over phenomena to the competition between the surface and the strain energy. The x-ray powder diffraction, the x-ray reflectivity, and the ex-situ AFM surface topology study consistently suggest that the microscopic growth front was in fact always the (002) planes. In the initial stage of growth, the (002) planes were aligned to the substrate surface to minimize the surface energy. At later stages, however, the (002) growth front tilted away from the surface by about $60^{\circ}$ to relax the strain, which caused the cross-over of the preferred growth direction to the <111> direction.

• Journal of the Korean Ceramic Society
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• v.31 no.3
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• pp.249-256
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• 1994

By surface structure and X-ray topographic observation, growth mechanism of NAB single crystal grown by TSSG technique using a BaB4O7 flux was studied. Surface structure of grown crystals were investigated by optical microscope. Growth history and crystal defects included within grown crystal were investigated using X-ray topography. The {001} faces were grown by 2-D nucleation growth. As decreasing cooling rate, growth mechanism of {111} and {11} was changed from 2-D nucleation growth to the growth by screw dislocation. Only surface striations developed parallel to a-axis were observed on {010} faces. Growth sector of NAB crystals were divided into {001}, {111}, {010}, {021}, {11}. The inclusion which was usually trapped between {001} faces was investigated.

• ETRI Journal
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• v.19 no.2
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• pp.71-81
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• 1997

We report on the room-temperature-growth of highly uniform and ultrathin Ag films on Sb-terminated Si(111) surfaces, as evidenced from a scanning tunneling microscopy (STM) study in an UHV system. With predeposition of one monolayer (ML) of Sb, uniform growth of Ag islands was observed at room temperature. The Sb layer suppresses the surface diffusion of Ag atoms on Si surface and increases the Ag island density, and then the increased island density is believed to cause coalescence of Ag islands before the beginning of multilayer growth in higher coverages, resulting in the growth of atomically flat and uniform islands on the Sb surfactant layer.