• Electrical & Electronic Materials
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• v.7 no.1
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• pp.49-56
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• 1994

Polycrystalline CdS thin films were deposited by using EBE method and its crystal structure, surface morphology, electrical and optical properties as a function of annealing temperature were investigated. It was found that optimum growth conditions were substrate temperature annealing temperature 300[.deg. C]. The films were hexagonal structure preferred(002) plane and maximum grain size was 421[.angs.]. As the results, resistivity and optical transmittance of CdS thin films were $8.3{\times}{10^3}$[.ohm.cm] and 89[%] respectively.

• Journal of Powder Materials
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• v.1 no.1
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• pp.15-20
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• 1994

The effect of SiC addition on sintering behaviors and microstructures of TiB2 ceramics were studied. The sintering of TiB2 was limited due to the surface diffusion and rapid grain growth at high temperature. However the addition of SiC to TiB2 ceramics improved the densification to above 99% of the theoretical density. The sintering of TiB2-SiC composite starts at 120$0^{\circ}C$ with the melting of the oxides in particle surface as impurities. After the reduction of the oxide by additional cabon at above 140$0^{\circ}C$, the grain boundary diffusion through the interface of TiB2-SiC play an important role. TEM observation showed neither chemical reactions nor other phases formed at the TiB2-SiC interfaces but the microcracks were observed due to the mismatch of thermal expansion between TiB2-SiC.

• Progress in Superconductivity
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• v.3 no.2
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• pp.188-192
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• 2002

To introduce flux pinning center in HTS-BSCCO system, nano-size MgO particles were uniformly distributed within the Bi-2223 grain by partial hydration of MgO. The existing method MgO doped Bi-2223 used nato-size MgO powders, which resulted in agglomeration during mixing or grain growth during heat-treatment due to the high surface energy of the fine particles. By hydration of the MgO surface, the agglomeration of the MgO powders was avoided and the size of remaining MgO core was controlled by changing hydration medium and time. The thin film obtained by spin coating of (Bi_$1.8/Pb_{0.4}$)$Sr_2$$_{Ca}$$2.2/Cu_3$ $O_{y}$ nitrate solution mixed with hydrated MgO showed the even distribution of nano-size MgO particles in the Bi-2212 grains.s.s.

• Journal of the Korean institute of surface engineering
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• v.27 no.4
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• pp.234-240
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• 1994

A large area impurity doping method for poly-Si TFT LCD has been developed. The advantage of this method is the doping of impurities into Si over a large area without mass separation and beam scanning. Phosphorus diluted in hydrogen was discharged by RF(13.56MHz) power and ions from discharged gas were accelerated by DC acceleration voltage and were implanted into deposited Si films. The annealing characteristic of this method was similar to that of the ion implantation method in the low doping concentration. Three mechanisms were evolved in the annealing characteristics of phosphorus doped Si films. Point defects annihilation and the retrogradation of dopant atoms at grain boundaries as a result of grain growth played a major role at low and high annealing temperature, respectively. However, due to the dopant segregation, the reverse annealing range existed at intermediate annealing temperature.

• Journal of the Korean Vacuum Society
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• v.9 no.1
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• pp.60-68
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• 2000

The optical constants ($E_g^d$, n, K) of the polycrystalline CdSe thin films deposited on the glass substrate by the electron-beam evaporation technique are determined over 400~2,500 nm photon wavelengths. In order to explain the variation of the optical contents with film thickness and substrate temperatures, the surface microstructural parameter are investigated by AFM (atomic forced microscope( images for the films deposited by different growth conditions. It is shown that the variations of optical constants are close related to changes of the surface morphology of the CdSe thin films. The decrease in the band gap with film thickness is connected with quantum size effects due to increase of the grain size. The refractive index of CdSe films decrease with increasing the grain size of the films, and the dispersion of the refractive index followed a single oscillator model according to the Sellmeier formulation.

• Journal of the Korean institute of surface engineering
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• v.34 no.4
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• pp.289-296
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• 2001

Ni-P electroformed layers were investigated for developing a steam generator tube repair technology in PWRs. The effects of an additive, RPP (Reagent over Pitting Protection) and agitation on mechanical properties and microstructure of the layer were evaluated. The addition of the RPP showed to inhibit the formation of pores, to refine the grain size, and to increase the residual stress in the layer. However, the agitation of the solution during electroforming was observed to increase pores in local regions of the electroformed layer, resulting in decreasing its mechanical properties. The heat treatment of the layer at $343^{\circ}C$ for 1 hr. precipitated the very fine particles of Ni3P in the layer, which inhibited grain growth and increased microhardness.

• Journal of the Korean institute of surface engineering
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• v.24 no.4
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• pp.196-205
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• 1991

Multi-level thin films are very important in ULSI applications because of their high electromigration resistance. This study presents the effects of titanium, titanium nitride and titanium tungsten underlayers of the stability of multi-aluminum thin films during isothermal annealing. High purity Al(99.999%) films have been electron-beam evaporated on Ti, TiN, TiW films formed on SiO2/Si (P-type(100))-wafer substrates by RF-sputtering in Ar gas ambient. The hillock growth was increased with annealing temperatures. Growth of hillocks was observed during isothermal annealing of the thin films by scanning electron microscopy. The hillock growth was believed to appear due to the recrystallization process driven by stress relaxation during isothermal annealing. Thermomigration damage was also presented in thin films by grain boundary grooving processes. It is shown that underlayers of Al/TiN/SiO2, Al/TiW/SiO2 thin films are preferrable to Al/SiO2 thin film metallization.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2002.05a
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• pp.35-35
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• 2002

Atomic force microscopy was applied to study the formation and growth mechanism of thin chrome layers prepared under various pulse plating conditions. The chrome was electro-deposited from an electrolyte bath containing 250 gl-l of chromic acid, 25 gl-l of sulfuric acid using direct current density of $1.6{\;}mA.$\textrm{mm}^{-2} and pulse currents with on-off time from 5 to 900 ms. The higher current density enhanced nucleation rate which resulted in refining grain size. The chrome growth kinetics determining nodule size and shape significantly depends on the duration of on-time rather than duration of off-time and on/off time ratio.

• Journal of Powder Materials
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• v.11 no.3
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• pp.233-241
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• 2004

In this study, bottom-up type powder processing and top-down type SPD (severe plastic deformation) approaches were combined in order to achieve both full density and grain refinement of Al-20 wt% Si powders without grain growth, which was considered as a bottle neck of the bottom-up method using the conventional powder metallurgy of compaction and sintering. ECAP (Equal channel angular pressing), one of the most promising method in SPD, was used for the powder consolidation. The powder ECAP processing with 1, 2, 4 and 8 passes was conducted for 10$0^{\circ}C$ and 20$0^{\circ}C$ It was found by microhardness, compression tests and micro-structure characterization that high mechanical strength could be achieved effectively as a result of the well bonded powder contact surface during ECAP process. The SPD processing of powders is a viable method to achieve both fully density and nanostructured materials.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.3 no.4
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• pp.88-94
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• 2004

High manganese steel was maintained stability of Non-Magnetics performance. Fatigue tests were carried out under constant stress amplitude, using a non-magnetic high manganese steel. The fatigue crack growth mechanism of the high manganese steel was clarified from results such as observation of crack growth path and fracture surface. The result of getting this study was shown as following: 1) Remarkably ${\Delta}Kth$ of the high manganese steel is big with about 3 times of the general steel product. 2) In the low ${\Delta}K$ value region, da/dN is dependent on Kmax, and in the high ${\Delta}K$ value region, it is dependent on ${\Delta}Keff$. The reason of this behavior is crack closure due to fracture surface roughness and fretting oxide. 3) It seems to ease the stress concentration of crack tip crack growth behavior in the ${\Delta}Kth$ vicinity by the generation of the secondary crack.