• Title/Summary/Keyword: Surface grain growth

Search Result 351, Processing Time 0.028 seconds

Nano-Structure Control of SiC Hollow Fiber Prepared from Polycarbosilane (폴리카보실란으로부터 제조된 탄화규소 중공사의 미세구조제어)

  • Shin, Dong-Geun;Kong, Eun-Bae;Cho, Kwang-Youn;Kwon, Woo-Tek;Kim, Younghee;Kim, Soo-Ryong;Hong, Jun-Sung;Riu, Doh-Hyung
    • Journal of the Korean Ceramic Society
    • /
    • v.50 no.4
    • /
    • pp.301-307
    • /
    • 2013
  • SiC hollow fiber was fabricated by curing, dissolution and sintering of Al-PCS fiber, which was melt spun the polyaluminocarbosilane. Al-PCS fiber was thermally oxidized and dissolved in toluene to remove the unoxidized area, the core of the cured fiber. The wall thickness ($t_{wall}$) of Al-PCS fiber was monotonically increased with an increasing oxidation curing time. The Al-PCS hollow fiber was heat-treated at the temperature between 1200 and $2000^{\circ}C$ to make a SiC hollow fibers having porous structure on the fiber wall. The pore size of the fiber wall was increased with the sintering temperature due to the decomposition of the amorphous $SiC_xO_y$ matrix and the growth of ${\beta}$-SiC in the matrix. At $1400^{\circ}C$, a nano porous wall with a high specific surface area was obtained. However, nano pores grew with the grain growth after the thermal decomposition of the amorphous matrix. This type of SiC hollow fibers are expected to be used as a substrate for a gas separation membrane.

Selection of Cultivars and Organic Solvents to Improve Fruit Set of Greenhouse Watermelon during Cold Period (저온기 시설수박 착과율 증진을 위한 품종 및 화분분리 유기용매 선발)

  • Lim, Chae-Shin
    • Journal of Bio-Environment Control
    • /
    • v.19 no.3
    • /
    • pp.147-152
    • /
    • 2010
  • Poor fruit set during winter period is one of the biggest problem in plastic tunnel watermelon cultivation. Hand pollination is inevitable to maximize fruit set of the winter watermelon. Productivity and viability of pollen grain and organic solvents for pollen storage were investigated. All cultivars produced more than 10 mg/flower except for 'Kumchun' cultivar. Pollen amount per flower were 13.8 mg in 'Bok' and 12.1 mg in 'Speedkul'. Germination rate of pollen grains incubated at $30^{\circ}C$ right after soaking in pentane solvent were 76% in 'Kumchun' as the lowest and 92% in 'Apollokul' as the highest. The pollen of 'Bok' showed the highest germination rate by 75% after a 15-day storage in pentane. All cultivars showed their pollen germination rate below 25% after a 24-day storage. Among the cuitivars, speed of pollen tube growth in vitro were relatively lower in 'Kumchun' and 'Sambokkul' by below $50\;{\mu}m/hr$. Pollen tube of these cultivars tended to burst during its elongation on the medium. Pollen stored 24 hrs in organic solvents showed 45, 39, 34, 23, and 19% of germination in pentane, ethyl ether, n-hexane, ethyl acetate, and acetone, respectively. Compared with light condition, pollen viability was higher in darkness during pollen storage in organic solvents. Pollen grain was susceptible to the organic solvent. The viability of pollen grains seems to be influenced greatly by duration of soaking pollen in organic solvent and the polarity of solvents. Organic solvent damages surface of pollen grain and extent of damage was varied by the solvents.

Preliminary Research of the Sedimentary Environment in Bupyeng Reservoir Region, Soyang Lake in Chuncheon - Focus on Sentinel-2 Satellite Images and in-situ data - (춘천시 소양호 상류 부평지구의 퇴적환경에 대한 선행연구 - 현장조사와 위성영상자료를 중심으로 -)

  • Kim, GeonYoung;Kim, Dain;Kim, TaeHun;Lee, JinHo;Jang, YoSep;Choi, HyunJin;Shim, WonJae;Park, SungJae;Lee, Chang-Wook
    • Korean Journal of Remote Sensing
    • /
    • v.34 no.6_1
    • /
    • pp.1119-1130
    • /
    • 2018
  • Soyang Lake has been contributing to economic growth by preventing flood damage in the metropolitan area, the water level in the middle to upper flow of lake has been greatly decreased due to the drought in 2015. In order to restore the existing flow rate, Bupyungbo has been built in Bupyeong-ri, Shin Nam-myeon, Inje-gun to cause artificial changes on the sedimentary environment of Bupyeong freshwater region. Therefore, this study intends to confirm the changes of sedimentary environment since Bupyeongbo has been utilized. For this study, we used the Sentinel-2 satellite image data periodically to measure the dimension of water according to the volume of water kept near Bupyung district and analyzed the particle size and the percentage of water content of the sediments through field study. The Sentnel-2 satellite images showed us how the water surface has been changed and that during the period from September 2017 to October 2018, the minimum and maximum area of water surface was observed in June 2018 and in January 2018, respectively. In addition, we find that the smaller being the particle size, the higher having the water content and that there is higher the correlation between the water content and the grain size of the sediment layer. Hereafter, if we will acquire the drone images at Bupyung district, we expect that we will be able to measure the distribution of sediments in the same area according to different time periods and observe various kinds of sediment through field work.

Heat Treatment Effects on the Phase Evolutions of Partially Stabilized Grade Zirconia Plasma Sprayed Coatings

  • Park, Han-Shin;Kim, Hyung-Jun;Lee, Chang-Hee
    • Journal of the Korean institute of surface engineering
    • /
    • v.34 no.5
    • /
    • pp.486-493
    • /
    • 2001
  • Partially stabilized zirconia (PSZ) is an attractive material for thermal barrier coating. Zirconia exists in three crystallographic phases: cubic, tetragonal and monoclinic. Especially, the phase transformation of tetragonal phase to monoclinic phase accompanies significant volume expansion, so this transition generally results in cracking and contributes to the failure of the TBC system. Both the plasma sprayed ZrO$_2$-8Y$_2$O$_3$ (YSZ) coat and the ZrO$_2$,-25CeO$_2$,-2.5Y$_2$O$_3$ (CYSZ) coat are isothermally heat -treated at 130$0^{\circ}C$ and 150$0^{\circ}C$ for 100hr and cooled at different cooling rates. The monoclinic phase is not discovered in all the CYSZ annealed at 130$0^{\circ}C$ and 150$0^{\circ}C$. In the 150$0^{\circ}C$ heat-treated specimens, the YSZ contains some monoclinic phase while none exists in the 130$0^{\circ}C$ heat-treated YSZ coat. For the YSZ, the different phase transformation behaviors at the two temperatures are due to the stabilizer concentration of high temperature phases and grain growth. For the YSZ with 150$0^{\circ}C$-100hr annealing, the amount of monoclinic phase increased with the slower cooling rate. The extra oxygen vacancy, thermal stress, and c to t'phase transformation might suppress the t to m martensitic phase transformation.

  • PDF

Magnetotransport Properties of Co-Fe/Al-O/Co-Fe Tunnel Junctions Oxidized with Microwave Excited Plasma

  • Nishikawa, Kazuhiro;Orata, Satoshi;Shoyama, Toshihiro;Cho, Wan-Sick;Yoon, Tae-Sick;Tsunoda, Masakiyo;Takahashi, Migaku
    • Journal of Magnetics
    • /
    • v.7 no.3
    • /
    • pp.63-71
    • /
    • 2002
  • Three fabrication techniques for forming thin barrier layer with uniform thickness and large barrier height in magnetic tunnel junction (MTJ) are discussed. First, the effect of immiscible element addition to Cu layer, a high conducting layer generally placed under the MTJ, is investigated in order to reduce the surface roughness of the bottom ferromagnetic layer, on which the barrier is formed. The Ag addition to the Cu layer successfully realizes the smooth surface of the ferromagnetic layer because of the suppression of the grain growth of Cu. Second, a new plasma source, characterized as low electron energy of 1 eV and high density of $10^{12}$ $cm^{-3}$, is introduced to the Al oxidation process in MTJ fabrication in order to reduce damages to the barrier layer by the ion-bombardment. The magnetotransport properties of the MTJs are investigated as a function of the annealing temperature. As a peculiar feature, the monotonous decrease of resistance area product (RA) is observed with increasing the annealing temperature. The decrease of the RA is due to the decrease of the effective barrier width. Third, the influence of the mixed inert gas species for plasma oxidization process of metallic Al layer on the tunnel magnetoresistance (TMR) was investigated. By the use of Kr-O$_2$ plasma for Al oxidation process, a 58.8 % of MR ratio was obtained at room temperature after annealing the junction at $300{^{\circ}C}$, while the achieved TMR ratio of the MTJ fabricated with usual Ar-$0_2$ plasma remained 48.4%. A faster oxidization rate of the Al layer by using Kr-O$_2$ plasma is a possible cause to prevent the over oxidization of Al layer and to realize a large magnetoresistance.

Effect of Annealing Heat Treatment to Corrosion Resistance of a Copper (구리의 내식성에 미치는 어닐링 열처리의 영향)

  • Kim Jin-Kyung;Moon Kyung-Man;Lee Jin-Kyu
    • Journal of Advanced Marine Engineering and Technology
    • /
    • v.29 no.6
    • /
    • pp.654-661
    • /
    • 2005
  • Copper is a well known alloying element that is used to improve the resistance to general corrosion of stainless steel And also Cu cation have the anti-fouling effect to inhibit adhesion of the marine algae and shellfish to the surface of heat exchanger cooling pipe or outside wall of the ship, Therefore there are some anti-fouling methods such as anti-fouling Paint mixed with copper oxide or MGPS(Marine Growth Preventing System) by using Cu cation dissolved to the sea wather solution. Cu cation can be dissolved spontaneously by galvanic current due to Potential difference between Cu and cooling pipe of heat exchanger with Ti material, which may be one of the anti-fouling designs. In this study the effect of annealing heat treatment to galvanic current and Polarization behavior was investigated with a electrochemical points of view such as measurement of corrosion Potential, anodic polarization curve. cyclic voltammetric curve, galvanic current etc The grain size of the surface in annealed at $700^{\circ}C$ was the smallest than that of other annealing temperatures. and also the corrosion Potential showed more positive potential than other annealing temperatures. The galvanic current between Ti and Cu with annealed at $700^{\circ}C$ was the largest value in the case of static condition. However its value in the case of flow condition was the smallest than the other temperatures. Therefore in order to increase anti-fouling effect by Cu cation, the optimum annealing temperature in static condition of sea water is $700^{\circ}C$, however non- heat treated specimen in the case of flow condition may be desirable.

Morphological Structural and Electrical Properties of DC Magnetron Sputtered Mo Thin Films for Solar Cell Application

  • Fan, Rong;Jung, Sung-Hee;Chung, Chee-Won
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2012.02a
    • /
    • pp.389-389
    • /
    • 2012
  • Molybdenum is one of the most important materials used as a back ohmic contact for $Cu(In,Ga)(Se,S)_2$ (CIGS) solar cells because it has good electrical properties as an inert and mechanically durable substrate during the absorber film growth. Sputter deposition is the common deposition process for Mo thin films. Molybdenum thin films were deposited on soda lime glass (SLG) substrates using direct-current planar magnetron sputtering technique. The outdiffusion of Na from the SLG through the Mo film to the CIGS based solar cell, also plays an important role in enhancing the device electrical properties and its performance. The structure, surface morphology and electrical characteristics of Mo thin films are generally dependent on deposition parameters such as DC power, pressure, distance between target and substrate, and deposition temperature. The aim of the present study is to show the resistivity of Mo layers, their crystallinity and morphologies, which are influenced by the substrate temperature. The thickness of Mo films is measured by Tencor-P1 profiler. The crystal structures are analyzed using X-ray diffraction (XRD: X'Pert MPD PRO / Philips). The resistivity of Mo thin films was measured by Hall effect measurement system (HMS-3000/0.55T). The surface morphology and grain shape of the films were examined by field emission scanning electron microscopy (FESEM: Hitachi S-4300). The chemical composition of the films was obtained by the energy dispersive X-ray spectroscopy (EDX). Finally the optimum substrate temperature as well as deposition conditions for Mo thin films will be developed.

  • PDF

Surface Morphology Study of Al,$\textrm{Ga}_{1-}$,N grown by Plasma Induced Molecular Beam Epitaxy (분자선증착법으로 성장된 AlGaN 에피층의 표면 형상 분석)

  • Kim, Je-Won;Choe, In-Hun;Park, Yeong-Gyun;Kim, Yong-Tae
    • Korean Journal of Materials Research
    • /
    • v.9 no.9
    • /
    • pp.878-882
    • /
    • 1999
  • Structural properties of $Al_xGa_1-_xN$ epilayers grown on (0001) sapphire substrate by plasma induced molecular beam epitaxy are investigated in the range of AlN molar fraction from 0.16 to 0.76. The AlN molar fraction estimated by X-ray diffraction agrees well with that of Rutherford backscattering spectroscopy, showing a good linear relationship. The uniform Auger electron microscopy depth profile and linear dependence of average atomic concentration of all the constituents of AlGaN epilayers on AlN molar fraction imply that the epitaxial growth of $Al_xGa_1-_xN$ layers with variation of AlN molar fraction is well controlled without the compositional fluctuation in depth of the epilayer. It is observed by atomic force microscopy that the surface grain shape of $Al_xGa_1-_xN$ epilayer changes from roundish to coalesced one with increasing AlN molar fraction.

  • PDF

Retardation of Grain Growth of Copper Electrodeposits by Organic Additive (유기첨가제를 통한 구리도금층 결정립 성장의 억제)

  • Jeong, Yong-Ho;Park, Chae-Min;Lee, Hyo-Jong
    • Proceedings of the Korean Institute of Surface Engineering Conference
    • /
    • 2016.11a
    • /
    • pp.139-139
    • /
    • 2016
  • 반도체 다마신배선용 도금용 구리도금첨가제는 대표적으로 accelerator, suppressor 및 leveler 첨가제를 사용하여 다마신 패턴을 채우고 평탄화를 시킬 수 있다. Si 반도체 공정기술에 기반한 정확한 구조분석을 통해 각각의 첨가제의 기능이 비교적 체계적으로 연구되었으며, 최근에는 유속영향을 많이 받는 것으로 알려진 leveler 첨가제에 대한 연구가 활발히 진행되고 있다. 본 연구는 대표적 leveler 첨가제의 하나인 Janus Green B(JGB, $C_{30}H_{31}ClN_6$)를 0 ~ 1 mM을 첨가하여 Si 기판위에 증착된 Cu 씨드층 상의 도금후 표면상태 및 불순물의 농도를 분석하고, 이 박막층들의 결정립 성장 경향성을 electron backscattered diffraction(EBSD) 분석을 통해 진행하였다. C, H, N 등의 불순물이 JGB 농도와 선형적 관계를 가지고 증가하는 것을 알 수 있었으며, S와 O의 불순물도 JGB 농도 증가에 따라 증가하는 것을 알 수 있었다. 또한 0.1 mM 첨가한 경우에 60% 정도 결정립 성장이 진행된 것을 알 수 있었으며, 0.2 mM을 넣은 경우에는 결정립 성장이 일어나지 않은 것을 알 수 있었다. 흥미로운 점은 4 point probe를 통한 면저항 측정을 통해 EBSD를 통한 결정립성장이 관찰되지 않은 0.2 mM JGB를 첨가한 경우에 대해서도 면저항의 감소가 관찰되며, 오히려 JGB 농도가 높을수록 이러한 면저항의 감소가 빠르게 시작되는 것을 관찰할 수 있었다. 이는 JGB 농도 증가에 따라 박막층의 불순물의 농도가 증가하고 막내에 존재하는 불순물의 농도가 증가하면 내부응력장이 커짐으로 인해 더욱 빠른 속도로 불순물의 재배치가 일어난 것으로 보인다. 이러한 불순물이 결정립계면에 편석되는 경우에 pinning을 통해 결정립계면의 이동을 저하시킬 수 있으므로 결정립의 성장 억제가 가능해진 것으로 판단된다.

  • PDF

Fabrication of SiC Converted Graphite by Chemical Vapor Reaction Method(II) (화학적 기상 반응법에 의한 탄화규소 피복 흑연의 제조(II))

  • 윤영훈;최성철
    • Journal of the Korean Ceramic Society
    • /
    • v.36 no.1
    • /
    • pp.21-29
    • /
    • 1999
  • The effects of density and pore size distribution of substrate in preparing SiC conversiton layer on graphite substrate were investigated. The chemical reaction for formation of SiC conversion layer was occurred at substrate surface or below surface through SiC gas infiltration. It was supposed that the pore size distribution required for the sufficient SiO gas infiltration and the continuous chemical reaction during conversion process was in the range of 1.0∼10.0$\mu\textrm{m}$. In the stress analysis of SiC layer with finite element method (FEM), the residual stress distribution due to thermal mismatch was shown. However, the compressive stress was measured in SiC layer by X-ray diffraction, it was presumed that the residual stress distribution of SiC layer was mainly influenced by the constraining effect of interlayer between SiC layer and graphite substrate, and the densification behaviro and the grain growth in SiC conversion layer.

  • PDF