• 한국산학기술학회논문지
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• 제22권5호
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• pp.310-316
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• 2021

기존의 인공위성은 다기능·높은 성능을 가진 대형위성을 국가 단위에서 운용하는 것이 일반적이었으나 최근의 전기·전자 및 광학 기술의 경량 소형화 발전에 따라 점차 소형위성이 주목받고 있다. 크기와 무게가 감소됨에 따라 적은 비용으로 개발 및 발사가 가능하여 위성 개발에 진입장벽이 낮아지고 있으나, 인공위성의 전력공급에 필수적인 태양전지 패널의 경우 태양광에 효율적으로 노출되기 위해 넓은 표면적이 필요하여 소형화 및 경량화가 제한적이다. 우주용 태양전지는 우주선과 태양열, 온도와 같은 다양한 우주환경을 고려하여 제작되어야하고, 부피를 최적화하기 위해 전개 매커니즘을 적용하며 경량화 및 고효율화를 위하여 태양전지 셀의 구조적 재료적인 연구개발이 필요하다. 현재 태양전지 패널로 개발되어 운용되고 있는 제품들은 고효율화를 위하여 주로 InGaP/GaAs/Ge 소재의 3중구조를 적용하고 있다. 최근에는 초고효율 다층구조 태양전지를 위하여 4중접합 이상의 구조가 연구되고 있으며, 나아가 소재적으로 경량화에 유리한 유연박막 태양전지, 유기 및 유무기 하이브리드 태양전지 등이 차세대 소형위성용 태양전지로 주목받고 있다.

• 한국자기학회지
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• 제20권5호
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• pp.173-177
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• 2010

이 연구에서는 각분해 광전자 분광법(angle-resolved photoemission spectroscopy: ARPES)을 시용하여 전하밀도파(chargedensity-wave: CDW)를 형성하는 물질인 $CeTe_2$의 전자구조를 연구하였다. $CeTe_2$의 ARPES 데이터에서는 분산적인 띠들이 분명하게 관찰되었다. $CeTe_2$의 일정에너지(constant energy: CE) 맵에서는 4중 대칭성(fourfold symmetry)이 관찰되었으며, 그 형태가 문헌에 있는 $CeTe_2$의 CE 맵과 유사하였다. 이러한 발견은 $CeTe_2$의 CDW 형성이 $2{\times}2$ 형태의 살창 변형에 의한 것임과 4f 전자들이 $CeTe_2$의 CDW 형성에 별다른 기여를 하지 않는다는 것을 나타낸다. 이 연구로부터 $CeTe_2$에서 페르미 준위 근처의 전자들은 주로 Te(1) 5p와 Ce 5d 전자들이며 Te(1) 5p 전자들에 의한 띠가 CDW 형성에 기여하고 Ce 5d 전자들에 의한 띠는 CDW 상태에서도 페르미 준위를 가로지르는 금속성을 나타낸다는 것을 알 수 있었다.

• 한국결정성장학회지
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• 제24권2호
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• pp.65-69
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• 2014

A1100, A5052, A6061, A6063, A7075 규격의 시판 알루미늄 합금 판재를 $Na_2SiO_3$와 $Na_2P_2O_7$ 전해질에서 pulse폭 $2000{\mu}sec$, + impulse 420 V, $400{\mu}sec$, -impulse $300{\mu}sec$의 bipolar pulse로 플라즈마 전해 산화 코팅(plasma electrolytic oxidation coating)한 산화피막의 결정상을 분석하였다. 표면에 형성된 산화물의 결정상은 ${\alpha}-alumina$, ${\gamma}-alumina$, ${\eta}-alumina$, $Al_{4.95}Si_{1.05}O_{9.52}$, 그리고 $(Al_{0.9}Cr_{0.1})_2O_3$가 관찰되었다. Bipolar pulse에 의해서 전해액의 성분인 Si가 산화피막에 포함되며, 포함된 Si는 결정상을 형성하기도 하지만 유리상을 형성시킨다. 이때 합금의 Mg 성분은 유리상의 양을 증가시킨다. Micro plasma에 의해서 용융된 표면은 유리상이 먼저 형성되고 이후 계속된 micro plasma의 열에 의하여 새로운 결정상으로 전이가 일어나는 과정을 거치며, 이에 따라 기존에 보고된 결정상이외에도 다양한 결정상이 형성될 수 있음을 추측할 수 있다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.154-155
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• 2012

The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (＜ $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.

• E2M - 전기 전자와 첨단 소재
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• 제12권7호
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• pp.7-11
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• 1999

Fully sealed field emission display in size of 4.5 inch has been fabricated using single-wall carbon nanotubes-organic vehicle com-posite. The fabricated display were fully scalable at low temperature below 415$^{\circ}C$ and CNTs were vertically aligned using paste squeeze and surface rubbing techniques. The turn-on fields of 1V/${\mu}{\textrm}{m}$ and field emis-sion current of 1.5mA at 3V/${\mu}{\textrm}{m}$ (J=90${\mu}{\textrm}{m}$/$\textrm{cm}^2$)were observed. Brightness of 1800cd/$m^2$ at 3.7V/${\mu}{\textrm}{m}$ was observed on the entire area of 4.5-inch panel from the green phosphor-ITO glass. The fluctuation of the current was found to be about 7% over a 4.5-inch cath-ode area. This reliable result enables us to produce large area full-color flat panel dis-play in the near future. Carbon nanotubes (CNTs) have attracted much attention because of their unique elec-trical properties and their potential applica-tions [1, 2]. Large aspect ratio of CNTs together with high chemical stability. ther-mal conductivity, and high mechanical strength are advantageous for applications to the field emitter [3]. Several results have been reported on the field emissions from multi-walled nanotubes (MWNTs) and single-walled nanotubes (SWNTs) grown from arc discharge [4, 5]. De Heer et al. have reported the field emission from nan-otubes aligned by the suspension-filtering method. This approach is too difficult to be fully adopted in integration process. Recently, there have been efforts to make applications to field emission devices using nanotubes. Saito et al. demonstrated a car-bon nanotube-based lamp, which was oper-ated at high voltage (10KV) [8]. Aproto-type diode structure was tested by the size of 100mm $\times$ 10mm in vacuum chamber [9]. the difficulties arise from the arrangement of vertically aligned nanotubes after the growth. Recently vertically aligned carbon nanotubes have been synthesized using plasma-enhanced chemical vapor deposition(CVD) [6, 7]. Yet, control of a large area synthesis is still not easily accessible with such approaches. Here we report integra-tion processes of fully sealed 4.5-inch CNT-field emission displays (FEDs). Low turn-on voltage with high brightness, and stabili-ty clearly demonstrate the potential applica-bility of carbon nanotubes to full color dis-plays in near future. For flat panel display in a large area, car-bon nanotubes-based field emitters were fabricated by using nanotubes-organic vehi-cles. The purified SWNTs, which were syn-thesized by dc arc discharge, were dispersed in iso propyl alcohol, and then mixed with on organic binder. The paste of well-dis-persed carbon nanotubes was squeezed onto the metal-patterned sodalime glass throuhg the metal mesh of 20${\mu}{\textrm}{m}$ in size and subse-quently heat-treated in order to remove the organic binder. The insulating spacers in thickness of 200${\mu}{\textrm}{m}$ are inserted between the lower and upper glasses. The Y\ulcornerO\ulcornerS:Eu, ZnS:Cu, Al, and ZnS:Ag, Cl, phosphors are electrically deposited on the upper glass for red, green, and blue colors, respectively. The typical sizes of each phosphor are 2~3 micron. The assembled structure was sealed in an atmosphere of highly purified Ar gas by means of a glass frit. The display plate was evacuated down to the pressure level of 1$\times$10\ulcorner Torr. Three non-evaporable getters of Ti-Zr-V-Fe were activated during the final heat-exhausting procedure. Finally, the active area of 4.5-inch panel with fully sealed carbon nanotubes was pro-duced. Emission currents were character-ized by the DC-mode and pulse-modulating mode at the voltage up to 800 volts. The brightness of field emission was measured by the Luminance calorimeter (BM-7, Topcon).

• 한국자기학회지
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• 제19권5호
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• pp.165-170
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• 2009

준안정 상태인 덩치 fcc Fe는 반강자성 상태가 기저 상태인 것으로 알려져 있고 적절한 fcc 금속 표면 위에 fcc Fe를 성장시킬 수 있음이 보고된 바 있다. 본 연구에서는 fcc 금속 (001) 표면 위의 Fe 원자층의 자성을 연구하기 위해 Cu(001), Rh(001), Pd(001), Ag(001) 표면 위의 Fe 단층의 자성을 제일원리계산 방법 중 자성 연구에 가장 적합한 총퍼텐셜선형보강평면파(fullpotential linearized augmented plane wave; FLAPW) 방법을 사용하여 연구하였다. 고려한 계 중에서 2차원 격자상수가 가장 작은 Cu(001) 표면과 가장 큰 Ag(001) 표면 위의 Fe 단층은 강자성이 비교적 큰 에너지 차이로 Fe-fcc 금속 층간 거리에 관계없이 안정적이었고, 중간 크기의 2차원 격자상수를 가진 Rh(001)과 Pd(001) 표면 위의 Fe 단층은 반강자성 상태가 안정적이었으나, 층간 거리가 커짐에 따라 강자성 상태가 안정적일 수도 있는 것으로 계산되었다. 계산된 자기모멘트는 1Fe/Cu(001), 1Fe/Rh(001), 1Fe/Pd(001), 1Fe/Ag(001)의 강자성 상태에서 2.811, 2.945, 2.987, 2.990 $_{{\mu}B}$이었고, 반강자성 상태에서는 2.624, 2.879, 2.922, 3.001 $_{{\mu}B}$이었다.

• 한국재료학회지
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• 제22권4호
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• pp.180-184
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• 2012

Nanostructures of ZnO, such as nanowires, nanorods, nanorings, and nanobelts have been actively studied and applied in electronic or optical devices owing to the increased surface to volume ratio and quantum confinement that they provide. ZnO seed layer (about 40 nm thick) was deposited on Si(100) substrate by RF magnetron sputtering with power of 60 W for 5 min. ZnO nanorods were grown on ZnO seed layer/Si(100) substrate at $95^{\circ}C$ for 5 hr by hydrothermal method with concentrations of $Zn(NO_3)_2{\cdot}6H_2O$ [ZNH] and $(CH_2)_6N_4$ [HMT] precursors ranging from 0.02M to 0.1M. We observed the microstructure, crystal structure, and photoluminescence of the nanorods. The ZnO nanorods grew with hexahedron shape to the c-axis at (002), and increased their diameter and length with the increase of precursor concentration. In 0.06 M and 0.08 M precursors, the mean aspect ratio values of ZnO nanorods were 6.8 and 6.5; also, ZnO nanorods had good crystal quality. Near band edge emission (NBE) and a deep level emission (DLE) were observed in all ZnO nanorod samples. The highest peak of NBE and the lower DLE appeared in 0.06 M precursor; however, the highest peak of DLE and the lower peak of NBE appeared in the 0.02 M precursor. It is possible to explain these phenomena as results of the better crystal quality and homogeneous shape of the nanorods in the precursor solution of 0.06 M, and as resulting from the bed crystal quality and the formation of Zn vacancies in the nanorods due to the lack of $Zn^{++}$ in the 0.02 M precursor.

• 전기화학회지
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• 제4권4호
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• pp.172-175
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• 2001

마그네트론 스퍼터링 방법에 의하여 Nanophase 촉매층을 형성하여 Direct Methanol Fuel Cell(DMFC)에 적용하였다. 일반적인 박막 증착 방법보다 높은 압력 (Ar/He혼합기체)에서 금속 Target과 탄소 Target을 동시에 스퍼터링하여 내피온막 위에 직접 코팅함으로써 기공성 있는 PtRu혹은 Pt및 탄소입자를 포함한 새로운 구조의 촉매층을 형성하였다. 본 방법에 의하여 $1.5mg/cm^2$의 PtRu(Anode) 및 $1mg/cm^2$ Pt(Cathode) 로딩으로 2M Methanol, 1 Bar공기, $80^{\circ}C$조건에서 $45mW/cm^2$의 출력을 얻을 수 있었으며, 이는 기존의 상용방법에 의하여 제조된 전극보다 같은 조건에서 $30\%$의 성능향상을 제시한 것이다. 이는 Nanophase촉매층 구조로 인하여 초미세 분말을 적용하였고, 많은 량의 원자들이 입계에 배열하게 됨으로써 촉매반응을 원활하게 하고,연료의 공급을 효율적으로 해준 것에 기안한 것으로 판단된다. 그러므로, 본 연구의 결과를 응용할 경우 DMFC를 휴대용 전자기기에 적용함에 있어서 성능향상 및 가격경쟁력 확보에 도움을 줄 것으로 기대된다.

• 한국정보통신학회논문지
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• 제21권3호
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• pp.578-584
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• 2017

PET (Polyethylene terephthalate) 플라스틱 기판 위에 IZTO (In-Zn-Sn-O) 박막을 증착하기 전에, $SiO_2$ 버퍼층을 전자빔 증착 방법으로 100 nm 의 두께로 증착하였다. IZTO 박막은 RF 마그네트론 스퍼터링법으로 RF 파워는 30~60 W 로, 공정 압력은 1~7 mTorr 로 변화시켜가며 $SiO_2$/PET 에 증착하여 IZTO 박막의 구조적, 전기적, 광학적 특성을 분석하였다. RF 파워 50 W 와 공정 압력 3 mTorr 에서 증착한 IZTO 박막이 $4.53{\times}10^{-3}{\Omega}$ 의 제일 큰 재료평가지수와 이때 $4.42{\times}10^{-4}{\Omega}-cm$ 의 비저항과 $27.63{\Omega}/sq.$ 의 면저항으로 가장 우수한 전기적 특성을 보였고, 가시광 영역 (400~800 nm) 에서의 평균 투과도도 81.24 % 로 가장 큰 값을 나타내었다. AFM 으로 IZTO 박막의 표면 형상을 관찰한 결과, 모든 IZTO 박막이 핀홀이나 크랙 같은 결함이 없는 표면을 가지며, RF 파워 50 W 와 공정 압력 3 mTorr에서 증착한 박막이 1.147 nm 의 가장 작은 표면 거칠기를 나타내었다. 이로부터 $SiO_2$/PET 구조위에 증착한 IZTO 박막이 차세대 플렉시블 디스플레이 소자에 응용될 수 있는 매우 유망한 재료임을 알 수 있었다.