• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.9
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• pp.46-55
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• 1992

This paper propose how to calculate the capacitance for VLSI interconnection lines in multi-dielectric layer. The proposed method is a expansive form of 3-dimensional direct intergral method developed in single-dielectric layer. We took into consideration the effect of multi-dielectric layer by using additional boundary condition instead of modified Green's function. It is used the potential equations in line surface and the electric field equations in dielectric interface as the boundary condition. RC delay time for interconnection line of multi-dielectric layer is obtained from the calculated capacitance value. At this time, we are used Al and WSiS12T as interconnection materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.7
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• pp.713-717
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• 2004

In this study, the etched trench properties including cross-sectional profile, surface roughness, and crystalline defects were investigated depending on the various silicon etching and additive gases, For the case of HBr$He-O_2SiF_4$ trench etching gas mixtures, the excellent trench profile and minimum defects in the silicon trench were achieved. Due to the residual oxide film grown by the additive oxygen gas, which acts as a protective layer during trench etching, the undercut and defects generation in the trench were suppressed. To improve the electrical characteristics of trench gate, the hydrogen annealing process after trench etching was also adopted. Through the hydrogen annealing, the trench corners might be rounded by the silicon atomic migration at the trench corners having high potential. The rounded trench corner can afford to reduce the gate electric field and grow a uniform gate oxide. As a result, dielectric strength and TDDB characteristics of the hydrogen annealed trench gate oxide were remarkably increased compared to the non-hydrogen annealed one.

• Journal of Sensor Science and Technology
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• v.19 no.6
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• pp.497-503
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• 2010

This paper reports a chemomechanical explosive sensor based on a thin polymer membrane. The sensor consists of thin parylene membrane and electrodes. Parylene membrane is functionalized with 4-mercaptophenol which interacts strongly with nitrotoluene based explosives. The membrane deflection caused by molecular interaction between the surface and explosives is monitored by capacitance between the membrane and the substrate. To measure the capacitance, electrodes are formed on the membrane and the substrate. While the previous cantilever system requires a bulky optical measuring system, this purely electric monitoring method offers a compact and effective system. Thus, this explosive sensor can be readily miniaturized and used in the field. The developed sensor can reliably detect dinitrotoluene and its limit of detection is evaluated as approximately 110 ppb.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.22 no.5
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• pp.47-52
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• 2008

In this paper partial discharge were simulated by conducted particle, a fine protrusion, surface discharge, which could be easy accumulated charge and concentrated electric field in the model GIS. In this times this paper measured and analyzed the radiated electromagnetic waves by using spectrum analyzer and antenna ($30{\sim}2,000[MHz]$ for measurement of EMI EMC in accordance with occurrence and propagation of partial discharge. In the basis of this results, a novel UHF(Ultra High Frequency) spherical sensor is presented. The measured impedance bandwidth of the proposed antenna is from 0.3[GHz] to 1.7[GHz]. Form results of this study, this antenna will be playing an important role for the sensor for insulation diagnosis system by UHF method of real site GIS and power equipment using $SF_6$ gas.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1896-1897
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• 2007

Medical equipment of high frequency has been presently applied to various parts of human body and novel treatment effects have been shown by it. Recently there are many cases that high frequency apparatus has been used in dermatology as the interest in beauty has been growing. Especially used in skin, blood volume is increased by keeping surface temperature of skin at around $43^{\circ}C$ and domodex folliculorum are treated by applying high electric field. It is the aspect we consider that increasing blood volume and domodex folliculorum treatment take effect on hair loss. In this study, high frequency electrotherapy apparatus was proposed to be applied to hair loss treatment. For that, human body was experimented with varying output voltage and frequency. The adjustable switching signal for treatment was obtained from 100[kHz] to 1000[kHz] by using DSP. Stable output specific was also obtained by feedback control to protect human body. The best hair growth conditions were the output voltage of 1.2[kV], the frequency of near 300[kHz] and the maximum current of 2[mA]. We apply this high frequency electrotherapy apparatus to two bald men, 46-year-old and 45-year-old. After treatment for a month they had thick and strong hair.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.08a
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• pp.109-122
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• 2002

The standard capacitor must have not only precise value of the capacitance but also the basic properties of low dielectric loss tangent. In the reforming process of capacitors, the dielectric loss tangent must be also reformed. In this paper, the development of standard capacitors of 10 and 100pF for the dielectric loss tangent standard using $Al_{2}O_{3}$ Crystal and the measurement of dielectric loss tangent are discussed. The dielectric loss tangent depends upon the surface between electrode and dielectric in capacitor. With using the Electric Field Simulator, precise design values of electrode are simulated. For the purpose of measuring capacitance effect just in the dielectric, 3-Terminal and 4-Terminal Pair configuration are applied respectively at the electrode and the connector for the measuring equipment. As stated above method, the standard capacitors of 10 and l00pF for the establishment of the dielectric loss tangent standard using the $Al_{2}O_{3}$ Crystal are made with low dielectric loss tangent less than 10-4.

• Journal of the Korean Society for Precision Engineering
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• v.21 no.11
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• pp.186-194
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• 2004

In this research, microfabrication technique using localized electrochemical deposition (LECD) with ultra short pulses is presented. Electric field is localized near the tool tip end region by applying a few hundreds of nano second pulses. Pt-Ir tip is used as a counter electrode and copper is deposited on the copper substrate in 0.5 M CuSO$_4$ and 0.5 M H$_2$SO$_4$ electrolyte. The effectiveness of this technique is verified by comparison with LECD using DC voltage. The deposition characteristics such as size, shape, surface, and structural density according to applied voltage and pulse duration are investigated. The proper condition is selected from the results of the experiments. Micro columns less than 10 $\mu$m in diameter are fabricated using this technique. The real 3D micro structures such as micro pattern and micro spring can be fabricated by this method. It is suggested that presented method can be used as an easy and inexpensive method for fabrication of microstructure with complex shape.

• Journal of the Korean Applied Science and Technology
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• v.19 no.2
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• pp.73-78
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• 2002

The polyimide(PI) Langmuir-Blodgett(LB) ultra thin films were prepared by imidizing the PAAS LB films of PMDA and benzidine system with a thermal treatment at $250^{\circ}C$ for 30min, where the PAAS LB films were formed on substrates by using LB technique. The thicknesses of one layer of PAAS and PI LB film that deposited at the surface pressure of 27mN/m were 20.9 and 4A, respectively. At low electric field, ohmic conduction($I^{\propto}$ V) was observed and the calculated electrical conductivity was about $4.23{\times}10^{-15}{\sim}9.81{\times}10^{-15}S/cm$. The dielectric constant of LB film was about 7.0.

• Applied Science and Convergence Technology
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• v.27 no.4
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• pp.70-74
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• 2018

We fabricated an anode-type ion source driven by a charge repulsion mechanism and investigated its beam shape controlled by a Whenelt mask integrated at the front face of the source. The ion beam shape was observed to vary by changing the geometry of the Whenelt mask. As the angle of inclination of the Whenelt mask was varied from $40^{\circ}$ to $60^{\circ}$, the etched area at a thin film was reduced from 20 mm to 7.5 mm at the working distance of 286 mm, and the light transmittance through the etched surface was increased from 78% to 80%, respectively. In addition, for the step height difference, ${\Delta}$ between the inner mask and the outer mask of ${\Delta}=0$, -1 mm, and +1 mm, we observed the ion beam shape was formed to be collimated, diverged, and focused, respectively. The focal length of the focused beam was 269 mm. We approved experimentally a simple way of controlling the electric field of the ion beam by changing the geometry of the Whenelt mask such that the initial direction of the ion beam in the plasma region was manipulated effectively.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2008.03a
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• pp.557-560
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• 2008

A two-dimensional particle-in-cell(PIC) simulation with a Monte-Carlo Collision(MCC) has been developed to investigate the discharge characteristics of the acceleration channel of a HET. The dynamics of electrons and ions are treated with PIC method at the time scale of electrons in order to investigate the particle transport. The densities of charged particles are coupled with Poisson's equation. Xenon neutrals are injected from the anode and experience elastic, excitation, and ionization collisions with electrons, and are scattered by ions. These collisions are simulated by using an MCC model. The effects of control parameters such as magnetic field profile, electron current density, and the applied voltage have been investigated. The secondary electron emission on the dielectric surface is also considered.