• Journal of the Korean Crystal Growth and Crystal Technology
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• v.2 no.1
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• pp.1-9
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• 1992

Radiation heat transfer was calculated for initial stage of crystal growth in Czochralski crystal growth system. View factors among surface elements were calculated for the estimation of heat evolution and all the surfaces were assumed to be diffuse-gray. The values of view factors were greatly different along the position of surface elements. The dissipated amounts of heat flux from the melt surface were 3.6 times larger than those from the crystal surface at the initial stage of crystal growth and this amounts were greater when the surface elements were not considered. The trijunction part of the crystal was greatly affected by the melt surface near the crystal. Consequently radiation heat transfer between surface elements must be considered in order to correctly simulate the initial crystal growth.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.20 no.10
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• pp.3322-3333
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• 1996

A numerical analysis has been conducted to investigate a modified floating-zone crystal growth process in which most of the melt surface is covered with a heated ring. The crystal rod is not only pulled downward but rotated around its axisymmetric line during crystal growth process in order to produce the flat interface of crystal growth and the single crystal growth of NaNO3 is considered in 6mm diameter. The present study is made from a full-equation-based analysis considering a pulling velocity in all of solid and liquid domains and both of solid-liquid interfaces are tracked simultaneously with a governing equation in each domain. Numerical results are mainly presented for the comparison of the surface shape of rotational crystal rod with that of no-rotational crystal rod and the effects of revolution speeds of the crystal rod. Results show that the rotation of crystal rod produces more its flat surface. In addition, the shape of crystal growth near the centerline is more concaved with the increase in the revolution speed of crystal rod. The flow pattern and temperature distribution is analyzed and presented in each case. As the pulling velocity of crystal rod is increasing, the free surface of the melt below the heated ring is enlarged due to the crystal interface migrating downward.

• Journal of the Korean Ceramic Society
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• v.43 no.11 s.294
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• pp.728-733
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• 2006

The equilibrium or growth shape of ceramic materials is classified largely into two categories according to the thermodynamic conditions imposed. One is a polyhedral shape where the surface free energy is anisotropic, and the other a spherical shape where the surface free energy is isotropic. In the case of grains with a polyhedral shape of anisotropic surface free energy, socalled abnormal grain growth usually takes place due to a significant energy barrier for a growth unit to be attached to the crystal surface. In the case of grains with a spherical shape of isotropic surface free energy, however, normal grain growth with a uniform size distribution takes place. In this contribution, the state-of-the-art of our current understanding of the relationship between the crystal shape and the microstructure evolution during the sintering of ceramic materials in the presence of a liquid phase was discussed.

• Korean Journal of Crystallography
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• v.5 no.2
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• pp.93-99
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• 1994

Growth form and surface morphology of NYAB single crystal grown by TSSG technique using a K2O/3MoOS/0.5B203 flux was investigated. In the crystal grown from <100> or <120> seed, prismatic and (101) faces were well developed with different size each other. (001) face was also developed in the crystal grown from <001> seed. While growth hillocks were observed on the prismatic face of the crystal grown from <100> seed, surface striations parallel to neighbor (101) faces were formed on that face of the crystal grown from <001> seed. The (101) faces were grown by two dimensional nucleation growth. (001) face which was developed at slow growth velocity of [001] direction was grown by screw dislocation Anisotropy of growth velocity as to seed orientation affected on crystal morphology and surface morphology.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.1
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• pp.44-49
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• 1995

Abstract The surface of 6H - SiC bulk crystal grown by sublimation process was investigated by optical microscope observation. Since, in the 6H crystal growing, the crystal had the habitual step growth attitude such that the lateral growth rate along the random a - axis orientation was higher than that along the c - axis of the growth direction, then many steps were developed. There were, also, many micropipes on the surface in the form of as-like large voids. However, they were differenciated with pores and cross- sectional shape of them were close to the circle. In this study, many micropipes, planar defects and the growth steps appeared on the grown crystal surface were investigated.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.1
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• pp.27-40
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• 1997

The heat in Czochralski method is transfered by all transport mechanisms such as convection, conduction and radiation and convection is caused by the temperature difference in the molden pool, the rotations of crystal or crucible and the difference of surface tension. This study delvelops the simulation model of Czochralski growth by using the finite difference method with fixed grids combined with new latent heat treatment model. The radiative heat transfer occured in the surfce of the system is treated by calculating the view factors among surface elements. The model shows that the flow is turbulent, therefore, turbulent modeling must be used to simulate the transport phenomena in the real system applied to 8" Si single crystal growth process. The effects of a cusp magnetic field imposed on the Czochralski silicon melt are studied by numerical analysis. The cusp magnetic field reduces the natural and forced convection due to the rotation of crystal and crucible very effectively. It is shown that the oxygen concentration distribution on the melt/crystal interface is sensitively controlled by the change of the magnetic field intensity. This provides an interesting way to tune the desired O concentration in the crystal during the crystal growing.

• The korean journal of orthodontics
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• v.27 no.5 s.64
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• pp.839-852
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• 1997

It has been submitted that different ion solutions containing sulfate induce crystal growth and might substitute conventional acid etching for pretreatment of enamel in orthodontic bonding(${\AA}rtun$ et al., Am. J. Orthod. 85, 333, 1984). This investigation was designed to evaluate the relevance of crystal growth on the enamel surface as an alternative to conventional acid etching in direct bonding of orthodontic brackets. Annexing Li2SO4, MgSO4, K2SO4 respectively in the solution with $25\%$ polyacrylic md 0.3M sulfuric acids were employed to enhance the crystal growth. Human bicuspids were treated with various parameters as combinations of crystal growth and glass ionomer cement, crystal growth and orthodontic resin, acid etching and orthodontic resin for an investigative purpose. Crystal growth solution containing MgSO4 showed the highest shear bond strength(15.6MPa) within the groups of bonding brackets with glass ionomer cement(p<0.01). Bonding with glass ionomer cement on the surface of crystal growth demonstrated higher shear bond strength than with orthodontic resin(p<0.001). Bonding with glass ionomer cement on the surface treated with crystal growth solution containing MgSO4 or K2SO4 was not different shear bond strength statistically from bonding with orthodontic resin on the acid-etched surface. It suggests that bonding brackets with glass ionomer cement on the surface treated with crystal growth solution containing MgSO4 or K2SO4 is a potential alternative to bonding with resin on the acid etched sufrace.

• Journal of the Korean Society for Heat Treatment
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• v.31 no.5
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• pp.237-243
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• 2018

In-rich InGaN epilayers were grown on (0001) sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE). InGaN epilayers grown at various growth condition were observed by SEM, XRD, and RHEED. When plasma power of nitrogen increased from 290 to 350 W, surface morphology and crystal quality became worse according to more active nitrogen on the surface of InGaN at N-rich growth condition. As In composition was reduced from 89 to 71% by changing the incoming flux of In and Ga, surface morphology and crystal quality became worse. In addition, weak peaks of cubic InGaN phase was observed from InGaN layer with 71% In composition by XRD ${\Phi}$ scan measurement. When growth temperature decreased from 500 to $400^{\circ}C$, RHEED diffraction pattern was changed to be from streaky to spotty which means atomically rough surface, and spotty pattern showed cubic symmetry of InGaN clearly. XRD ${\Phi}$ scan measurement gave clear evidence that more cubic InGaN phase was formed at low growth temperature. All these results indicates that extremely low surface mobility of Ga adatom caused inferior crystal quality and cubic InGaN phase.

• Journal of the Korean Ceramic Society
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• v.31 no.3
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• pp.249-256
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• 1994

By surface structure and X-ray topographic observation, growth mechanism of NAB single crystal grown by TSSG technique using a BaB4O7 flux was studied. Surface structure of grown crystals were investigated by optical microscope. Growth history and crystal defects included within grown crystal were investigated using X-ray topography. The {001} faces were grown by 2-D nucleation growth. As decreasing cooling rate, growth mechanism of {111} and {11} was changed from 2-D nucleation growth to the growth by screw dislocation. Only surface striations developed parallel to a-axis were observed on {010} faces. Growth sector of NAB crystals were divided into {001}, {111}, {010}, {021}, {11}. The inclusion which was usually trapped between {001} faces was investigated.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.1 no.1
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• pp.74-81
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• 1991

The temperature profile of Czochralski single crystal growth system was simulated considering the fluid flow and surface radiation heat transfer. View factors of surface elements were calculated for radiation heat transfer. Two phases(solid and liquid) were treated as a continuous phase by assigning artificial large viscosity to the solid phase and latent heat was accounted by iterative heat revolution method. The solidification model was applied to solid front of the pure Ga during the melting to verify the model. The whole simulation model of CZ system was applied to the growth Al single crystal.