• Title/Summary/Keyword: Surface and interfaces

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pH Effects at Doped Si Semiconductor Interfaces (Doping된 Si 반도체 세계에서 pH 효과)

  • 천장호;라극환
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.27 no.12
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    • pp.1859-1864
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    • 1990
  • The effect of H+ and OH- ion concentrations at doped Si semiconductor/pH buffer solution interfaces were investigated in terms of cyclic current-voltage characteristics. The effects of space charge on oppositely doped Si semiconductors, i.e., p-and n-Si semiconductors, can be effectively applied to study the pH effects and the slow surface states at the interfaces. The adsorptions of H+ and OH- inons on the doped Si semiconductor surfaces are physical adsorption rather than chemical adsorption. Adsorptive processes and charging effects of the slow surface states can be explained as the potential barrier variations and the related current-voltage characteristics at the interfaces. Under forward bias, the charged slow surface states on the p-and n-si semiconductor surface are donor and acceptor slow surface states, respectively. The effects of minority carriers on the slow surface states can be neglected at the doped Si semiconductor interfaces.

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Effect of roughness on interface shear behavior of sand with steel and concrete surface

  • Samanta, Manojit;Punetha, Piyush;Sharma, Mahesh
    • Geomechanics and Engineering
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    • v.14 no.4
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    • pp.387-398
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    • 2018
  • The present study evaluates the interface shear strength between sand and different construction materials, namely steel and concrete, using direct shear test apparatus. The influence of surface roughness, mean size of sand particles, relative density of sand and size of the direct shear box on the interface shear behavior of sand with steel and concrete has been investigated. Test results show that the surface roughness of the construction materials significantly influences the interface shear strength. The peak and residual interface friction angles increase rapidly up to a particular value of surface roughness (critical surface roughness), beyond which the effect becomes negligible. At critical surface roughness, the peak and residual friction angles of the interfaces are 85-92% of the peak and residual internal friction angles of the sand. The particle size of sand (for morphologically identical sands) significantly influences the value of critical surface roughness. For the different roughness considered in the present study, both the peak and residual interaction coefficients lie in the range of 0.3-1. Moreover, the peak and residual interaction coefficients for all the interfaces considered are nearly identical, irrespective of the size of the direct shear box. The constitutive modeling of different interfaces followed the experimental investigation and it successfully predicted the pre-peak, peak and post peak interface shear response with reasonable accuracy. Moreover, the predicted stress-displacement relationship of different interfaces is in good agreement with the experimental results. The findings of the present study may also be applicable to other non-yielding interfaces having a similar range of roughness and sand properties.

A Qualitative Analysis on the Surface States at the Undoped Polycrystalline Si and GaAs Semiconductor Interfaces Using the Zeta Potential (Zeta 전위에 의한 도핑되지 않은 다결정 Si 및 GaAs 반도체 계면의 표면준위에 관한 정성적 해석)

  • Chun, Jang-Ho
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.24 no.4
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    • pp.640-645
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    • 1987
  • Surface states and interfacial phenomena at the undoped polycrystalline semiconductor particale-electrolyte interfaces were qualitatively analyzed based on the zeta potentials which were measured with microelectrophoresis measurements. The suspensions were composed of the undoped polycrystaline silicon(Si) or gallium arsenide (GaAs) semiconductor particles stalline Si and GaAs particles in the KCl electrolytes was 3.73~6.2x10**-4 cm\ulcornerV.sec and -2.3~1.4x10**-4cm\ulcornerV.sec at the same conditions, respectively. The range of zeta potentials corresponding to the electrophoretic mobilities is 47.8~80.1mV and -30.1~17.9mV, respectively. The variation of the zeta potentials of the undoped polycrystalline Si was similar to the doped crystalline Si. On the other hand, two points of zeta potential reversal occurred at the undoped polycrystalline GaAs-KCl electrolyte interfaces. The surface states of the undoped polycrystalline Si and GaAs were dominated by positively charged donor surface states. These surface states are attributed to adsorbed ion surface states (slow states) at the semiconductor oxide layer-electrolyte interfaces.

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Role of Surfaces and Their Analysis in Photovoltaics

  • Opila, Robert L.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.72-72
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    • 2011
  • Surface science is intrinsically related to the performance of solar cells. In solar cells the generation and collection of charge carriers determines their efficiency. Effective transport of charge carriers across interfaces and minimization of their recombination at surfaces and interfaces is of utmost importance. Thus, the chemistry at the surfaces and interfaces of these devices must be determined, and related to their performance. In this talk we will discuss the role of two important interfaces, First, the role of surface passivation is very important in limiting the rate of carrier of recombination. Here we will combine x-ray photoelectron spectroscopy of the surface of a Si device with electrical measurements to ascertain what factors determine the quality of a solar cell passivation. In addition, the quality of the heterojunction interface in a ZnSe/CdTe solar cell affects the output voltage of this device. X-ray photoelectron spectroscopy gives some insight into the composition of the interface, while ultraviolet photoemission yields the relative energy of the two materials' valence bands at the junction, which controls the open circuit voltage of the solar cell. The relative energies of ZnSe and CdTe at the interface is directly affected by the material quality of the interface through processing.

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Electronic structures of Ba-on-Alq3 interfaces and device characteristics of organic light-emitting diodes based on these interfaces - Device characteristics of Ba-on-Alq3 interfaces of OLEDs

  • Park, Jin-U;Im, Jong-Tae;Yeom, Geun-Yeong
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2011.05a
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    • pp.123-124
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    • 2011
  • Tris(8-quinolinolato)aluminum(III) (Alq3)와 Cathode 사이에 Ba o f 1nm를 삽입함으로써 OLED device의 성능이 향상되었다. 이 소자에 삽입된 Ba는 electron-injection barrier height를 낮추어서 전자주입에 영향을 주었다. 그러나 Ba 의 두께가 1nm이상일 경우에는 특성이 안 좋은 소자 성능을 보여줌을 알 수 있었다.

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Measurements of Sub- and Super Harmonic Waves at the Interfaces of Fatigue-Cracked CT Specimen

  • Jeong, Hyun-Jo;Barnard, Dan
    • Journal of the Korean Society for Nondestructive Testing
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    • v.31 no.1
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    • pp.1-10
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    • 2011
  • Nonlinear harmonic waves generated at cracked interfaces are investigated both experimentally and theoretically. A compact tension specimen is fabricated and the amplitude of transmitted wave is analyzed as a function of position along the fatigued crack surface. In order to measure as many nonlinear harmonic components as possible a broadband Lithium Niobate ($LiNbO_3$) transducers are employed together with a calibration technique for making absolute amplitude measurements with fluid-coupled receiving transducers. Cracked interfaces are shown to generate high acoustic nonlinearities which are manifested as harmonies in the power spectrum of the received signal. The first subharmonic (f/2) and the second harmonic (2f) waves are found to be dominant nonlinear components for an incident toneburst signal of frequency f. To explain the observed nonlinear behavior a partially closed crack is modeled by planar half interfaces that can account for crack parameters such as crack opening displacement and crack surface conditions. The simulation results show reasonable agreements with the experimental results.

FREE SURFACE FLOW COMPUTATION USING MOMENT-OF-FLUID AND STABILIZED FINITE ELEMENT METHOD (Moment-Of-Fluid (MOF) 방법과 Stabilized Finite Element 방법을 이용한 자유표면유동계산)

  • Ahn, H.T.
    • 한국전산유체공학회:학술대회논문집
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    • 2009.11a
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    • pp.228-230
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    • 2009
  • The moment-of-fluid (MOF) method is a new volume-tracking method that accurately treats evolving material interfaces. Based on the moment data (volume and centroid) for each material, the material interfaces are reconstructed with second-order spatial accuracy in a strictly conservative manner. The MOF method is coupled with a stabilized finite element incompressible Navier-Stokes solver for two fluids, namely water and air. The effectiveness of the MOF method is demonstrated with a free-surface dam-break problem.

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The rheology of two-dimensional systems

  • Fuller, G.;Yim, K.S.;Brooks, C.;Olson, D.;Frank, C.
    • Korea-Australia Rheology Journal
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    • v.11 no.4
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    • pp.321-328
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    • 1999
  • This paper discusses the rheology of complex interfaces comprised of amphiphilic materials that are susceptible to flow-induced orientation and deformation. The consequence of the coupling of the film micro-structure to flow leads to nonlinear rheology and surface fluid dynamics. Experimental methods designed to determine the mechanical rheological material functions of fluid-fluid interfaces as well as local, molecular and morphological responses are presented. These include a newly developed interfacial stress rheometer, flow ultraviolet dichroism, and Brewster-angle microscopy. These techniques are applied to a number of complex interfaces ranging from low molecular weight amphiphiles to polymer monolayers. Nonlinear flow phenomena ranging from two-dimensional nematic responses to highly elastic surface flows that manifest surface normal stress differences and elongational viscosities are described.

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