• 대한기계학회논문집A
• /
• 제33권8호
• /
• pp.793-798
• /
• 2009

In this paper, the simulation and optimization of SRH (Surface Relief Hologram) masks for printing LCD gate patterns using TIR (Total Internal Reflection) holographic lithography was investigated. A simulation and optimization algorithm based on SDTA (Scalar Diffraction Theory Analysis) method was developed. The accuracy of the algorithm was compared to that of the RCWA (Rigorous Coupled Wave Analysis) method for estimating the Fresnel diffraction pattern of Cr amplitude masks for the given system geometry. In addition, the results from the optimization algorithm were validated experimentally. It was found that one to the most important conditions for the fabrication of SRH masks is to avoid nonlinear shape distortions of the resulting grating. These distortions can be avoided by designing SRH masks with recorded gratings having small aspect ratios of width versus depth. The optimum gap size between the Cr and SRH masks was found using the optimization algorithm. A printed LCD gate pattern with a minimum line width of $1.5{\mu}m$ exposed using the optimized SRH mask was experimentally demonstrated.

• 한국광학회지
• /
• 제20권3호
• /
• pp.175-181
• /
• 2009

내부전반사 홀로그래픽 노광 기술은 넓은 면적(6")을 아주 미세하게($0.35{\mu}m$) 노광할 수 있는 차세대 광 노광 기술로서 평가받고 있다. 기존의 광 노광 기술은 $1.5{\mu}m/6}$ 이상이 가능한 (LCD용 노광기)과 $0.2{\mu}m/1.5"$ 이하(반도체용 노광기)의 패턴을 노광할 수 있도록 양분되어 발전하여 왔다. 이에 반하여 내부전반사 홀로그래픽 노광 기술은 일괄 노광 면적은 6"로 유지하면서 $0.35{\mu}m$에서 $1.5{\mu}m$의 사이의 패턴을 구현할 수 있는 특별한 능력을 갖고 있다. 이는 기존 광 노광 방식에서 반드시 필요로 하는 결상 광학계를 사용하지 않고 홀로그램 마스크를 사용하기 때문이다. 본 논문에서는 내부전반사 홀로그래픽 노광 기술의 핵심기술인 홀로그램 마스크를 표면 부조 홀로그램 형태로 구현할 수 있는 핵심 인자가 무엇인지를 분석하여 최적화 하는 방법에 대해 논하고, 이를 이용하여 노광한 미세패턴에 대한 결과를 실험적으로 평가하였다.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
• /
• pp.1430-1431
• /
• 2006

We investigated the formation of 2-dimension hologram grating by means of selective etching characteristic and photo-expansion effect according to photo irradiation on amorphous As-Ge-Se-S thin film. By method of phase holography, we made the 2-dimensional hologram grating by each (S:P) and ($+45^{\circ}:-45^{\circ}$) polarized beam with DPSS laser(532nm) and He-Ne laser(632nm). A recording property was observed at each polarized beam through 2-dimensional hologram surface relief grating. Chalcogenide thin film was etched selectively by NaOH solution after the formation of 1-dimensional diffraction grating. And then etched sample was rotated 90 degree to fabricate 2 dimensional hologram grating. We found that it was observed the formation of 2-dimensional hologram grating by AFM(Atomic Force Microscopy).