• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.116-117
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• 2006

We investigated selective emitter effect of Porous Silicon (PSI) as antireflection coatings (ARC). The thin PSi layer, less than 100nm, was electrochemically formed by electrochemical method in about $3{\mu}m$ thick $n^+$ emitter on single crystalline silicon wafer (sc-Si). The appropriate PSi formations for selective emitter effect were carried out a two steps. A first set of samples allowed to be etched after metal-contact processing and a second one to evaporate Ag front-side metallization on PSi layer, by evaluating the I-V features The PSi has reflectance less than 20% in wavelength for 450-1000nm and porosity is about 60%. The cell made after front-contact has improved cell efficiency of about in comparison with the one made after PSi. The observed increase of efficiency for samples with PSi coating could be explained not only by the reduction of the reflection loss and surface recombination but also by the increased short-circuit current (Isc) within selective emitter. The assumption was confirmed by numerical modeling. The obtained results point out that it would be possible to prepare a solar cell over 15% efficiency by the proposed simple technology.

• 한국태양에너지학회:학술대회논문집
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• 2012.03a
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• pp.243-247
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• 2012

The paper focuses on an anti-reflection (AR) coating deposited by PECVD in silicon solar cell fabrication. AR coating is effective to reduce the reflection of the light on the silicon wafer surface and then increase substantially the solar cell conversion efficiency. In this work, we carried out experiments to optimize double AR coating layer with silicon nitride and silicon oxide for the silicon solar cells. The p-type mono crystalline silicon wafers with $156{\times}156mm^2$ area, 0.5-3 ${\Omega}{\cdot}cm$ resistivity, and $200{\mu}m$ thickness were used. All wafers were textured in KOH solution, doped with $POCl_3$ and removed PSG before ARC process. The optimized thickness of each ARC layer was calculated by theoretical equation. For the double layer of AR coating, silicon nitride layer was deposited first using $SiH_4$ and $NH_3$, and then silicon oxide using $SiH_4$ and $N_2O$. As a result, reflectance of $SiO_2/SiN_x$ layer was lower than single $SiN_x$ and then it resulted in increase of short-circuit current and conversion efficiency. It indicates that the double AR coating layer is necessary to obtain the high efficiency solar cell with PECVD already used in commercial line.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.462-462
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• 2014

The effect of rear passivation for passivated emitter and rear cell (PERC) using ozone and H2O oxidant of atomic layer deposited (ALD) Al2O3 was studied by post-annealing in N2 and forming gas ambients. Rear surface of PERC solar cell was passivated by Al2O3 grown by ALD with ozone and H2O oxidant. Al2O3 grown by ALD with ozone oxidant has been known to have many advantages, such as lower interface defects, low leakage current density. Its passivation quality is better than Al2O3 with H2O. Al2O3 layer with 10 nm and 20 nm thickness was grown at $150^{\circ}C$ with ozone oxidant and at $250^{\circ}C$ with H2O oxidant. And then each samples were post-annealled at $450^{\circ}C$ in N2 ambients and at $850^{\circ}C$ in forming gas ambients. The passivation quality was investigated by measuring the minority carrier lifetime respectively. We examined atomic layer deposited Al2O3 such as growth rate, film density, thickness, negative fixed charge density at AlOx/Si interface, and reflectance. The influences of process temperature and heat treatment were investigated using Sinton (WCT-120) by Quasi-Steady State Photoconductance (QSSPC) mode. Ozone-based ALD Al2O3 film shows the best carrier lifetime at lower deposition temperature than H2O-based ALD.

• Korean Journal of Materials Research
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• v.26 no.1
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• pp.47-53
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• 2016

Silicon nitride ($SiN_x:H$) films made by plasma enhanced chemical vapor deposition (PECVD) are generally used as antireflection layers and passivation layers on solar cells. In this study, we investigated the properties of silicon nitride ($SiN_x:H$) films made by PECVD. The passivation properties of $SiN_x:H$ are focused on by making the antireflection properties identical. To make equivalent optical properties of silicon nitride films, the refractive index and thickness of the films are fixed at 2.0 and 90 nm, respectively. This limit makes it easier to evaluate silicon nitride film as a passivation layer in realistic application situations. Next, the effects of the mixture ratio of the process gases with silane ($SiH_4$) and ammonia ($NH_3$) on the passivation qualities of silicon nitride film are evaluated. The absorption coefficient of each film was evaluated by spectrometric ellipsometry, the minority carrier lifetimes were evaluated by quasi-steady-state photo-conductance (QSSPC) measurement. The optical properties were obtained using a UV-visible spectrophotometer. The interface properties were determined by capacitance-voltage (C-V) measurement and the film components were identified by Fourier transform infrared spectroscopy (FT-IR) and Rutherford backscattering spectroscopy detection (RBS) - elastic recoil detection (ERD). In hydrogen passivation, gas ratios of 1:1 and 1:3 show the best surface passivation property among the samples.

• Polymer(Korea)
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• v.27 no.5
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• pp.421-428
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• 2003

The kinetics of photoinitiated polymerization of reactive oligomer methacrylates and oligomer methacrylate/SBS blends have been studied to characterize the diffusion-controlled reaction using Fourier Transform Infrared Spectroscopy-Attenuated Total Reflectance (ATR-FTIR). The polymerization rates of reactive oligomer methacrylates and oligomer methacrylate/SBS blends were autocatalytic in nature at the initial stage and then a retardation of the reaction conversion occurred gradually as the polymer matrix became vitrified, and finally the reaction became diffusion controlled. Photopolymerization behavior of methacrylate/SBS blends was well predicted using the diffusion-controlled reaction model. N-Vinyl-2-pyrrolidinone (NVP) as a reactive solvent was used to incorporate SBS into methacrylate to form semi-IPN via photopolymerization. Due to the high reactivity of NVP, polymerization rate increased with the increase of NVP content. As the content of NVP-SBS in the blends increased up to 10 phr, the reaction conversion maintained almost constant. But above 20 phr of NVP-SBS in the blends, the reaction conversion gradually decreased since the increase of viscosity affected on the photopolymerization rate. The semi-IPN films of methacrylate/SBS blends were transparent at room temperature as well as at increased temperature and were able to be applied to surface coating.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.157-157
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• 2010

Vertical-structure light-emitting diodes (V-LEDs) by laser lift-off (LLO) have been exploited for high-efficiency GaN-based LEDs of solid-state lightings. In V-LEDs, emitted light from active regions is reflected-up from reflective ohmic contacts on p-GaN. Therefore, silver (Ag) is very suitable for reflective contacts due to its high reflectance (>95%) and surface plasmon coupling to visible light emissions. In addition, low contact resistivity has been obtained from Ag-based ohmic contacts annealed in oxygen ambient. However, annealing in oxygen ambient causes Ag to be oxidized and/or agglomerated, leading to degradation in both electrical and optical properties. Therefore, preventing Ag from oxidation and/or agglomeration is a key aspect for high-performance V-LEDs. In this work, we demonstrate the enhanced thermal stability of Ag-based Ohmic contact to p-GaN by reducing the thermal compressive stress. The thermal compressive stress due to the large difference in CTE between GaN ($5.6{\times}10^{-6}/^{\circ}C$) and Ag ($18.9{\times}10^{-6}/^{\circ}C$) accelerate the diffusion of Ag atoms, leading to Ag agglomeration. Therefore, by increasing the additional residual tensile stress in Ag film, the thermal compressive stress could be reduced, resulting in the enhancement of Ag agglomeration resistance. We employ the thin Ni layer in Ag film to form Ni/Ag mutli-layer structure, because the lattice constant of NiO ($4.176\;{\AA}$ is larger than that of Ag ($4.086\;{\AA}$). High-resolution symmetric and asymmetric X-ray diffraction was used to measure the in-plane strain of Ag films. Due to the expansion of lattice constant by oxidation of Ni into NiO layer, Ag layer in Ni/Ag multi-layer structure was tensilely strained after annealing. Based on experimental results, it could be concluded that the reduction of thermal compressive stress by additional tensile stress in Ag film plays a critical role to enhance the thermal stability of Ag-based Ohmic contact to p-GaN.

• Korean Journal of Materials Research
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• v.10 no.2
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• pp.171-174
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• 2000

In this study, the laser patterning of sputter-deposited amorphous CoNbZr films has been tried usig Nd: YAG laser. However, the metal film was not removed because of its high reflectance of the alser on the metal surface. To solve this problem, authors tried to screen-print a block polymer on the metal film and then irradiate the laser on the polymer. This is a new method which was suggested by this study. Using this new method, the metal films were effectively removed with the laser power of 114W even though the metal films was not removed with the laser power of 332W using the conventional method. This result leads to the conclusion that the block polymer acts as a laser energy absorbing and transferring layer.

• Korean Journal of Optics and Photonics
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• v.16 no.6
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• pp.553-559
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• 2005

Pulsed terahertz (THz) radiation was generated by optical rectification and detected by a fee space electro-optic sampling (FS-EOS) method. We used ZnTe (110) crystals for both generation and detection. By coating dielectric anti-reflection film on the ZnTe crystal surface, we can reduce the reflectance of a pump laser beam from $30\%$ to $2\%$, and the terahertz pulse amplitude increased $27\%$ compared with an uncoated crystal. A wider bandwidth of THz radiation was obtained by using a thinner crystal but the signal intensity was decreased in this case. And variations of THz radiation by changing orientation of the ZnTe crystal with respect to the pump (or probe) laser polarization, and by changing the power of the pump laser have also been investigated and discussed.

• Korean Journal of Materials Research
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• v.27 no.4
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• pp.211-215
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• 2017

Reactive Ion Etching (RIE) and wet etching are employed in existing texturing processes to fabricate solar cells. Laser etching is used for particular purposes such as selective etching for grooves. However, such processes require a higher level of cost and longer processing time and those factors affect the unit cost of each process of fabricating solar cells. As a way to reduce the unit cost of this process of making solar cells, an atmospheric plasma source will be employed in this study for the texturing of crystalline silicon wafers. In this study, we produced the atmospheric plasma source and examined its basic properties. Then, using the prepared atmospheric plasma source, we performed the texturing process of crystalline silicon wafers. The results obtained from texturing processes employing the atmospheric plasma source and employing RIE were examined and compared with each other. The average reflectance of the specimens obtained from the atmospheric plasma texturing process was 7.88 %, while that of specimens obtained from the texturing process employing RIE was 8.04 %. Surface morphologies of textured wafers were examined and measured through Scanning Electron Microscopy (SEM) and similar shapes of reactive ion etched wafers were found. The Power Conversion Efficiencies (PCE) of the solar cells manufactured through each process were 16.97 % (atmospheric plasma texturing) and 16.29 % (RIE texturing).

• Journal of Korea Game Society
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• v.9 no.3
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• pp.97-105
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• 2009

In this paper, we propose a new rendering scheme of cloth by measuring light-scattering pattern inside the cloth and reproducing using the pattern. To date, the BTF(Bidirectional Texture Function) has been one of the most appropriate method to realistically reconstruct cloth surface. However, the BTF has a couple of defects that it ultimately requires an infinite amount of data and all light effects should be used all together. We noted that internal scattering has a decisive contribution to the reality of cloth. Following this observation, we take an image of a ray of light scattering inside cloth for every position of the cloth sample and determine each pixel value by adding up all light influences arriving from its vicinity. Our method we propose in this paper provides a clue to more realistically represent cloth-like materials, which is one of the most challenging materials to express, by enabling each ray to be controlled individually.