• Journal of Electrical Engineering and information Science
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• v.2 no.5
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• pp.65-71
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• 1997

We present heterojunction solar cells with a structure of metal/a-Si:H(n-i-p)/poly-Si(n-p)/metal for the terrestrial applications. This cell consists fo two component cells: a top n-i-p junction a-Si:Hi cell with wide-bandgap 1.8eV and a bottom n-p junction poly-Si cell with narrow-bandgap 1.1eV. The efficiency influencing factors of the solar cell were investigated in terms of simulation an experiment. Three main topics of the investigated study were the bottom cell with n-p junction poly-Si, the top a-Si:H cell with n-i-p junction, and the interface layer effects of heterojunction cell. The efficiency of bottom cell was improved with a pretreatment temperature of 900$^{\circ}C$, surface polishing, emitter thickness of 0.43$\mu\textrm{m}$, top Yb metal, and grid finger shading of 7% coverage. The process optimized cell showed a conversion efficiency about 16%. Top cell was grown by suing a photo-CVD system which gave an ion damage free and good p/i-a-Si:H layer interface. The heterojunction interface effect was examined with three different surface states; a chemical passivation, thermal oxide passivation, and Yb metal. the oxide passivated cell exhibited the higher photocurrent generation and better spectral response.

• 보존과학연구
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• s.23
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• pp.41-57
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• 2002

It has been proved that pollutants stuck on the surface of stone architecture have significant direct and indirect harmful effects on them. Among them some do not look evidently harmful, but they have potentials to ruin stone architecture as time goes on. Since the cultural assets have magnificent meanings as historical aspects, their future states should be considered seriously as well as that of the presence. The past method to get rid of the pollutants from the surface of cultural properties has been changed a lot till the present along with scientific development of technology on this field. Existing method to eliminating pollutants are based on physical and chemical processing, which can make damages on them too. Recently cleansing using LASER has been developed in Europe and proved as effective and relatively less harmful to remove pollutants, and it has been adopted widely. After the success of the way by LASER, there are several trials to adopt the way to our cultural properties which have similar materials. Those showed satisfactory results and studies for developing the securer and more dependable ways to apply. From now on the report will show the effective ways to apply the method using LASER on to the similar materials and different materials as well and discuss about the pros and cons about the method.

• Journal of the Korean institute of surface engineering
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• v.56 no.3
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• pp.208-218
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• 2023

Photocatalysts are advanced materials which accelerate the photoreaction by providing ordinary reactions with other pathways. The catalysts have various advantages, such as low-cost, low operating temperature and pressure, and long-term use. They are applied to environmental and energy field, including the air and water purification, water splitting for hydrogen production, sterilization and self-cleaning surfaces. However, commercial photocatalysts only absorb ultraviolet light between 100 and 400 nm of wavelength which comprises only 5% in sunlight due to the wide band gap. In addition, rapid recombination of electron-hole pairs reduces the photocatalytic performance. Recently, studies on blackening photocatalysts by laser, thermal, and plasma treatments have been conducted to enhance the absorption of visible light and photocatalytic activity. The disordered structures could yield mid-gap states and vacancies could cause charge carrier trapping. Herein, liquid phase plasma (LPP) is adopted to synthesize Ag-doped black ZnO for the utilization of visible-light. The physical and chemical characteristics of the synthesized photocatalysts are analyzed by SEM/EDS, XRD, XPS and the optical properties of them are investigated using UV/Vis DRS and PL analyses. Lastly, the photocatalytic activity was evaluated using methylene blue as a pollutant.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.12
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• pp.56-63
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• 1994

The effects of sulfur treatments on the barrier heithts of Schottky contacts and the interface-state density of metal-insulator-semiconductor (MIS) capacitors on InP have been investigated. Schottky contacts were formed by the evaporation of Al, Au, and Pt on n-InP substrate before and after (NH$_{4}$)$_{2}$S$_{x}$ treatments, respectively. The barrier height of InP Schottky contacts was measured by their current-voltage (I-V) and capacitance-voltage (C_V) characteristics. We observed that the barrier heights of Schottky contacks on bare InP were 0.35~0.45 eV nearly independent of the metal work function, which is known to be due to the surface Fermi level pinning. In the case of sulfur-treated Au/InP ar Pt/InP Schottky diodes, However, the barrier heights were not only increased above 0.7 eV but also highly dependent on the metal work function. We have also investigated effects of (NH$_{4}$)$_{2}$S$_{x}$ treatments on the distribution of interface states in Si$_{3}$N$_{4}$InP MIS diodes where Si$_{3}$N$_{4}$ was provided by plasma enhanced chemical vapor deposition (PECVD). The typical value of interface-state density extracted feom 1 MHz C-V curve of sulfur-treated SiN$_{x}$/InP MIS diodes was found to be the order of 5${\times}10^{10}cm^{2}eV^{1}$. This value is much lower than that of MiS diodes made on bare InP surface. It is certain, therefore, that the (NH$_{4}$)$_{2}$S$_{x}$ treatment is a very powerful tool to enhance the barrier heights of Au/n-InP and Pt/n-InP Schottky contacts and to reduce the density of interface states in SiN$_{x}$/InP MIS diode.

• Clean Technology
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• v.17 no.1
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• pp.41-47
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• 2011

[ $MnO_2$ ]catalysts were prepared by precipitation method using potassium manganate and manganese acetate. The effect of calcination temperatures of $MnO_2$ catalysts for CO oxidation has been studied and their physicochemical properties were studied by X-ray diffraction (XRD), $N_2$ sorption, temperature programmed reduction of $H_2$ ($H_2-TPR$), and temperature programmed desorption of CO (CO-TPD) techniques. $MnO_2$ calcined at $300^{\circ}C$ catalyst has a large surface area $181m^2/g$ having a narrow pore size distribution at 9 nm. The results of XRD and $H_2-TPR$ showed that the catalysts calcined at different temperatures showed mixed oxidation states of Mn such as $Mn^{4+}$ and $Mn^{3+}$. CO-TPD showed that the quantity of $CO_2$ desorbed was decreased with increasing the calcination temperatures. The catalytic activity over the catalyst calcined at $300^{\circ}C$ exhibited the highest conversion reaching to 100% at $200^{\circ}C$. $H_2O$ vapor showed an inhibiting effect on the efficiency of the catalyst because of co-adsorption with CO on the active sites of manganese oxide catalysts and the initial catalytic activity of CO oxidation could be regenerated by removing $H_2O$ vapor in the reactants.

• Journal of the Korean Ceramic Society
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• v.48 no.6
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• pp.559-564
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• 2011

In order to investigate the behavior of $SiO_2$ in the molybdenum silicide powders, crystal structure of these powders was measured by XRD, in addition, surface composition and surface phase (or chemical states) and microstructure were analysed by XPS and TEM, respectively. Mo-silicide powders containing $SiO_2$ were synthesized by SHS (Self-Propagating High-Temperature Synthesis) technique. In XRD result, according to increase of $SiO_2$ contents, the crystal structure for synthesized $MoSi_2$ powders was still typical $MoSi_2$ bct without any other phases. By XPS analysis, the surface of Mo and Si source powders was covered with $MoO_3$ and $SiO_2$, respectively, and the surface of synthesized $MoSi_2$ powder was also covered with $MoO_3$ and $SiO_2$, which were stable oxides at room temperature. However, according to increase of $SiO_2$ addition, $MoSi_2$ phase in XPS spectra decreased and $SiO_2$ phase increased relatively in synthesized $MoSi_2$ powders. From the results by XPS and XRD, we found that the existent $SiO_2$ has amorphous structure. In the microstructure, the small particulates of the synthesized products added $SiO_2$ agglomerated together to form larger clusters (from ~10 nm to ~1 ${\mu}m$). From TEM, XPS, and XRD results, we found that the out layer of agglomeration of synthesized $MoSi_2$ powder is surrounded by amorphous $SiO_2$.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2000.11a
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• pp.3-4
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• 2000

Many researchers are interested in the synthesis and characterization of carbon nitride and diamond-like carbon (DLq because they show excellent mechanical properties such as low friction and high wear resistance and excellent electrical properties such as controllable electical resistivity and good field electron emission. We have deposited amorphous carbon nitride (a-C:N) thin films and DLC thin films by shielded arc ion plating (SAIP) and evaluated the structural and tribological properties. The application of appropriate negative bias on substrates is effective to increase the film hardness and wear resistance. This paper reports on the deposition and tribological OLC films in relation to the substrate bias voltage (Vs). films are compared with those of the OLC films. A high purity sintered graphite target was mounted on a cathode as a carbon source. Nitrogen or argon was introduced into a deposition chamber through each mass flow controller. After the initiation of an arc plasma at 60 A and 1 Pa, the target surface was heated and evaporated by the plasma. Carbon atoms and clusters evaporated from the target were ionized partially and reacted with activated nitrogen species, and a carbon nitride film was deposited onto a Si (100) substrate when we used nitrogen as a reactant gas. The surface of the growing film also reacted with activated nitrogen species. Carbon macropartic1es (0.1 -100 maicro-m) evaporated from the target at the same time were not ionized and did not react fully with nitrogen species. These macroparticles interfered with the formation of the carbon nitride film. Therefore we set a shielding plate made of stainless steel between the target and the substrate to trap the macropartic1es. This shielding method is very effective to prepare smooth a-CN films. We, therefore, call this method "shielded arc ion plating (SAIP)". For the deposition of DLC films we used argon instead of nitrogen. Films of about 150 nm in thickness were deposited onto Si substrates. Their structures, chemical compositions and chemical bonding states were analyzed by using X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy and infrared spectroscopy. Hardness of the films was measured with a nanointender interfaced with an atomic force microscope (AFM). A Berkovich-type diamond tip whose radius was less than 100 nm was used for the measurement. A force-displacement curve of each film was measured at a peak load force of 250 maicro-N. Load, hold and unload times for each indentation were 2.5, 0 and 2.5 s, respectively. Hardness of each film was determined from five force-displacement curves. Wear resistance of the films was analyzed as follows. First, each film surface was scanned with the diamond tip at a constant load force of 20 maicro-N. The tip scanning was repeated 30 times in a 1 urn-square region with 512 lines at a scanning rate of 2 um/ s. After this tip-scanning, the film surface was observed in the AFM mode at a constant force of 5 maicro-N with the same Berkovich-type tip. The hardness of a-CN films was less dependent on Vs. The hardness of the film deposited at Vs=O V in a nitrogen plasma was about 10 GPa and almost similar to that of Si. It slightly increased to 12 - 15 GPa when a bias voltage of -100 - -500 V was applied to the substrate with showing its maximum at Vs=-300 V. The film deposited at Vs=O V was least wear resistant which was consistent with its lowest hardness. The biased films became more wear resistant. Particularly the film deposited at Vs=-300 V showed remarkable wear resistance. Its wear depth was too shallow to be measured with AFM. On the other hand, the DLC film, deposited at Vs=-l00 V in an argon plasma, whose hardness was 35 GPa was obviously worn under the same wear test conditions. The a-C:N films show higher wear resistance than DLC films and are useful for wear resistant coatings on various mechanical and electronic parts.nic parts.

• Transactions of the Korean hydrogen and new energy society
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• v.25 no.6
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• pp.577-585
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• 2014

Nanorod and particle shape $CeO_2$ were synthesized via hydrothermal process and precipitation method, respectively, and used as supports of Pt catalyst for water gas shift (WGS) reaction. Three different durations (12, 48, and 96h) for hydrothermal process were applied for the preparation of nanorod type $CeO_2$. 1.0 wt% of Pt was loaded on the prepared supports with incipient wetness method prior to the catalytic activity tests that were carried out at a GHSV of $95,541h^{-1}$, and a temperature range of 200 to $360^{\circ}C$. Varying duration of hydrothermal process led to the difference in physical characteristics of $CeO_2$ nanorods, such as aspect ratio, BET surface area, pore diameter, and pore volume. Consequently, the catalytic activities of Pt/$CeO_2$ nanorods were affected by the physical characteristics of the supports and appeared to be in the order of Pt/$CeO_2$(12) > Pt/$CeO_2$(48) > Pt/$CeO_2$(96). The comparison of the catalytic activities and results of the analysis (XPS, XRD, SEM, BET and TPR) for the supports revealed that the activity of the catalysts depends on chemical states of the Pt and the support materials in the temperature range that is lower than $280^{\circ}C$. However, the activity is rather dependent on the physical characteristic of the supports because the increased gas velocity limits the mass transfer of reactants in micropores of the supports.

• Applied Chemistry for Engineering
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• v.28 no.6
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• pp.720-725
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• 2017

M(10)-Ni(5)/SBA-15(M=Ce, Nd, Sm) catalysts were prepared for the partial oxidation of methane (POM) to syngas. The catalysts were characterized by BET, TEM, and XPS. The BET-specific surface area and average pore size for M(10)-Ni(5)/SBA-15(M=Ce, Nd, Sm) were 538.8, 504.3, and $447.3m^2/g$ and 6.4, 6.8, and 7.1 nm, respectively. TEM results showed that the mesoporous hexagonol structure was formed for SBA-15, while the homogeneous dispersion of Ni and Ce particles on the surface was formed for Ce(10)-Ni(5)/SBA-15 caused by the confinment effect of SBA-15. XPS data confirmed that $Ce^{4+}$ and $Ce^{3+}$ on the surface catalyst have two oxidation states due to the lattice oxygen species ($O^{2-}$, $O^-$). The yields of POM to syngas over Ce(10)-Ni(5)/SBA-15 were 52.9% $H_2$ and 21.7% CO at 1 atm, 973 K, $CH_4/O_2=2$, $GHSV=1.08{\times}10^5mL/g_{cat.}{\cdot}h$, and these values were kept constant even after 75 h on streams. The same tendency of syngas yields was observed for M(10)-Ni(5)/SBA-15(M=Ce, Nd, Sm). These results confirm that the redox reaction of promoters including Ce, Nd, and Sm enhanced the stability and yield of catalysts.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.169-169
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• 2008

To keep pace with scaling trends of CMOS technologies, high-k metal oxides are to be introduced. Due to their high permittivity, high-k materials can achieve the required capacitance with stacks of higher physical thickness to reduce the leakage current through the scaled gate oxide, which make it become much more promising materials to instead of $SiO_2$. As further studying on high-k, an understanding of the relation between the etch characteristics of high-k dielectric materials and plasma properties is required for the low damaged removal process to match standard processing procedure. There are some reports on the dry etching of different high-k materials in ICP and ECR plasma with various plasma parameters, such as different gas combinations ($Cl_2$, $Cl_2/BCl_3$, $Cl_2$/Ar, $SF_6$/Ar, and $CH_4/H_2$/Ar etc). Understanding of the complex behavior of particles at surfaces requires detailed knowledge of both macroscopic and microscopic processes that take place; also certain processes depend critically on temperature and gas pressure. The choice of $BCl_3$ as the chemically active gas results from the fact that it is widely used for the etching o the materials covered by the native oxides due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. In this study, the surface reactions and the etch rate of $Al_2O_3$ films in $BCl_3/Cl_2$/Ar plasma were investigated in an inductively coupled plasma(ICP) reactor in terms of the gas mixing ratio, RF power, DC bias and chamber pressure. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by AFM and SEM. The chemical states of film was investigated using X-ray photoelectron spectroscopy (XPS), which confirmed the existence of nonvolatile etch byproducts.