• Title/Summary/Keyword: Surface Area of Plasma

Search Result 259, Processing Time 0.027 seconds

Acetic Acid Gas Adsorption Characteristics of Activated Carbon Fiber by Plasma and Direct Gas Fluorination (플라즈마 및 직접 기상 불소화에 따른 활성탄소섬유의 초산가스 흡착 특성)

  • Lee, Raneun;Lim, Chaehun;Kim, Min-Ji;Lee, Young-Seak
    • Applied Chemistry for Engineering
    • /
    • v.32 no.1
    • /
    • pp.55-60
    • /
    • 2021
  • Fluorination was carried out to improve the adsorption performance of pitch-based activated carbon fibers (ACFs) onto acetic acid. Both plasma and direct gas fluorination were used for fluorination, and the acetic acid gas adsorption performance of fluorinated ACFs was investigated. X-ray photoelectron spectroscopy (XPS) is analyzed to determine the surface characteristics of ACFs, and the pore characteristics were analyzed by 77 K nitrogen adsorption. An adsorption performance was measured through gas chromatography, and it was confirmed that the breakthrough time of plasma fluorinated sample was 790 min and that the breakthrough time was delayed compared to that of using untreated one of 650 min. However, the breakthrough time of direct gas fluorinated sample was 390 min, indicating that the adsorption performance was inhibited. The plasma fluorinated ACFs showed an increase in the adsorption performance due to an electrostatic attraction between the acetic acid gas (CH3COOH) with the fluorine group introduced to the surface without changing its specific surface area. On the other hand, the specific surface area of the direct gas fluorinated ACFs decreased significantly up to 55%, and the physical adsorption effect on the acetic acid gas also reduced.

Excitonic transitions and dynamics in front and back surfaces of ZnO films grown by plasma-assisted molecular beam epitaxy

  • Lee, Seon-Gyun;Go, Hang-Ju;Yao, Takafumi;Jo, Yong-Hun
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2010.02a
    • /
    • pp.119-119
    • /
    • 2010
  • We report strong exciton transition and exciton-phonon couplings in photoluminescence (PL) of ZnO thin films grown on MgO/sapphire (buffer/substrate) by plasma-assisted molecular beam epitaxy. The PL spectra at 10 K showed the intensity of the dominant emission, donor-bound exciton transition of front surface (top surface, the latter part in growth) is found to be about 100 times higher than that of back surface (in-depth bottom area, the initial part), while the room temperature PL spectra showed dominant contributions from the free exciton emissions and phonon-replicas of free excitons for front surface and back surface, respectively, It could be attributed to the strong contributions of exciton-phonon coupling. Time resolved PL spectra reveal that the life time of exciton recombination from the front surface are longer than those from back surface. This is most probably due to the fact that reduction of non-radiative recombination in the front surface. This investigation indicates that the existence of native defects or trap centers which can be reduced by the proper initial condition in growth and the exciton-phonon interaction couplings play an important role in optical properties and crystal quality of ZnO thin films.

  • PDF

Novel synthesis of nanocrystalline thin films by design and control of deposition energy and plasma

  • Han, Jeon G.
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2016.02a
    • /
    • pp.77-77
    • /
    • 2016
  • Thin films synthesized by plasma processes have been widely applied in a variety of industrial sectors. The structure control of thin film is one of prime factor in most of these applications. It is well known that the structure of this film is closely associated with plasma parameters and species of plasma which are electrons, ions, radical and neutrals in plasma processes. However the precise control of structure by plasma process is still limited due to inherent complexity, reproducibility and control problems in practical implementation of plasma processing. Therefore the study on the fundamental physical properties that govern the plasmas becomes more crucial for molecular scale control of film structure and corresponding properties for new generation nano scale film materials development and application. The thin films are formed through nucleation and growth stages during thin film depostion. Such stages involve adsorption, surface diffusion, chemical binding and other atomic processes at surfaces. This requires identification, determination and quantification of the surface activity of the species in the plasma. Specifically, the ions and neutrals have kinetic energies ranging from ~ thermal up to tens of eV, which are generated by electron impact of the polyatomic precursor, gas phase reaction, and interactions with the substrate and reactor walls. The present work highlights these aspects for the controlled and low-temperature plasma enhanced chemical vapour disposition (PECVD) of Si-based films like crystalline Si (c-Si), Si-quantum dot, and sputtered crystalline C by the design and control of radicals, plasmas and the deposition energy. Additionally, there is growing demand on the low-temperature deposition process with low hydrogen content by PECVD. The deposition temperature can be reduced significantly by utilizing alternative plasma concepts to lower the reaction activation energy. Evolution in this area continues and has recently produced solutions by increasing the plasma excitation frequency from radio frequency to ultra high frequency (UHF) and in the range of microwave. In this sense, the necessity of dedicated experimental studies, diagnostics and computer modelling of process plasmas to quantify the effect of the unique chemistry and structure of the growing film by radical and plasma control is realized. Different low-temperature PECVD processes using RF, UHF, and RF/UHF hybrid plasmas along with magnetron sputtering plasmas are investigated using numerous diagnostics and film analysis tools. The broad outlook of this work also outlines some of the 'Grand Scientific Challenges' to which significant contributions from plasma nanoscience-related research can be foreseen.

  • PDF

POLYMER SURFACE MODIFICATION WITH PLASMA SOURCE ION IMPLANTATION TECHNIQUE

  • Han, Seung-Hee;Lee, Yeon-Hee;Lee, Jung-Hye;Yoon, Jung-Hyeon;Kim, Hai-Dong;Kim, Gon-ho;Kim, GunWoo
    • Journal of the Korean institute of surface engineering
    • /
    • v.29 no.5
    • /
    • pp.345-349
    • /
    • 1996
  • The wetting property of polymer surfaces is very important for practical applications. Plasma source ion implantation technique was used to improve the wetting properties of polymer surfaces. Poly(ethylene terephtalate) and other polymer sheets were mounted on the target stage and an RF plasma was generated by means of an antenna located inside the vacuum chamber. High voltage pulses of up to -10kV, 10 $\mu$sec, and up to 1 kHz were applied to the stage. The samples were implanted for 5 minutes with using Ar, $N_2,O_2,CH_4,CF_4$ and their mixture as source gases. A contact angle meter was used to measure the water contact angles of the implanted samples and of the samples stored in ambient conditions after implantation. The modified surfaces were analysed with Time-Of-Flight Mass Spectrometer (TOF-SIMS) and Auger Electron Spectroscopy (AES). The oxygen-implanted samples showed extremely low water contact angles of $3^{\circ}C$ compared to $79^{\circ}C$ of unimplanted ones. Furthermore, the modified surfaces were relatively stable with respect to aging in ambient conditions, which is one of the major concerns of the other surface treatment techniques. From TOF-SIMS analysis it was found that oxygen-containing functional groups had been formed on the implanted surfaces. On the other hand, the $CF_4$-implanted samples turned out to be more hydro-phobic than unimplanted ones, giving water contact angles exceeding $100^{\circ}C$ . The experiment showed that plasma source ion implantation is a very promising technique for polymer surface modification especially for large area treatment.

  • PDF

Discharge delay reduction by controlling the roughness of dielectric surface in AC PDP

  • Seo, Ki-Ho;Whang, Ki-Woong
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2006.08a
    • /
    • pp.1491-1494
    • /
    • 2006
  • We report a method for reducing the address discharge delay. The address discharge delay was reduced when the MgO protective layer was made on the dielectric area which was made rough intentionally. The delay reduction was more pronounced in the formative delay.

  • PDF

Characteristics of Pt/C Nano-catalyst Synthesized by Arc Plasma Deposition (아크 플라즈마 증착공정을 통한 Pt/C 나노촉매 합성 및 특성평가)

  • Joo, Hye-Sook;Choi, Han-Shin;Ha, Heon-Phil;Kim, Do-Hyang
    • Journal of Powder Materials
    • /
    • v.19 no.1
    • /
    • pp.6-12
    • /
    • 2012
  • Electricity is generated by the combined reactions of hydrogen oxidation and oxygen reduction which occur on the Pt/C catalyst surface. There have been lots of researches to make high performance catalysts which can reduce Pt utilization. However, most of catalysts are synthesized by wet-processes and a significant amount of chemicals are emitted during Pt/C synthesis. In this study, Pt/C catalyst was produced by arc plasma deposition process in which Pt nano-particles are directly deposited on carbon black surfaces. During the process, islands of Pt nano-particles were produced and they were very fine and well-distributed on carbon black surface. Compared with a commercialized Pt/C catalyst (Johnson & Matthey), finer particle size, narrower size distribution, and uniform distribution of APD Pt/C resulted in higher electrochemical active surface area even at the less Pt content.

Plasma Cosmetic Container Suitability (플라즈마 화장품 용기 적합성)

  • Ha Hyeon Jo;You-Yeon Chun;Hyojin Heo;Sang Hun Lee;Lei Lei;Ye Ji Kim;Byeong-Mun Kwak;Mi-Gi Lee;Bum-Ho Bin
    • Journal of the Society of Cosmetic Scientists of Korea
    • /
    • v.50 no.1
    • /
    • pp.59-65
    • /
    • 2024
  • For plasma cosmetics, it is important to ensure the long-term stability of plasma in the formulation. This study examined the suitability of containers for efficient plasma cosmetics development. By varying the surface area covered by the plasma, 4 cm2, 25 cm2, 75 cm2, and 175 cm2 containers were injected with cosmetic plasma, and the amount of nitric oxide (NO), the main active species of nitrogen plasma, was analyzed. As a result, the surface area and stability exposed to plasma tended to be inversely proportional, and it was most effective in a 4 cm2 container. Furthermore, 25 mm, 40 mm, and 50 mm vials were treated with plasma, which resulted in relative long-term stability of NO at 25 mm, a smaller surface area of the container exposed to air. Water mist and stratified mist were selected as cosmetic formulations, and NO plasma was injected into the water layer to observe the changes in formulation properties and the state of the injected NO plasma. In both formulations, the amount of NO plasma injected was about 1.5 times higher in the water phase mist than in the stratified mist, and the stratified mist gradually decreased with time and was found to disappear after 3 weeks. The stability of the nitrogen plasma was studied at low temperature (4 ℃), room temperature (25 ℃), and high temperature (37 ℃, 50 ℃). As a result, it was found that the water mist did not affect the stability, but the stratified mist observed a color change in the oil phase layer. Overall, this study demonstrates the container suitability of nitrogen plasma and suggests the importance of ensuring the stability of injected nitrogen plasma in cosmetic formulations.

Patterned Arrays of Well-Ordered ZnO Nanorods Assisted with Polystyrene Monolayer By Oxygen Plasma Treatment

  • Choi, Hyun Ji;Lee, Yong-Min;Lee, Yulhee;Seo, Hyeon Jin;Hwang, Ki-Hwan;Kim, Dong In;Yu, Jung-Hoon;Kim, Jee Yun;Nam, Sang Hun;Boo, Jin-Hyo
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2016.02a
    • /
    • pp.146-146
    • /
    • 2016
  • Zinc Oxide (ZnO) was known as a promising material for surface acoustic wave devices, gas sensors, optical devices and solar cells due to piezoelectric material, large band gap of 3.37 eV and large exciton binding energy of 60 meV at room temperature. In particular, the alignment of ZnO nanostructures into ordered nanoarrays can bring about improved sensitivity of devices due to widen the surface area to catch a lot of gas particle. Oxygen plasma treatment is used to specify the nucleation site of round patterned ZnO nanorods growth. Therefore ZnO nanorods were grown on a quartz substrate with patterned polystyrene monolayer by hydrothermal method after oxygen plasma treatment. And then, we carried out nanostructures by adjusting the diameter of the arranged ZnO nanorods according to polystyrene spheres of various sizes. The obtained ZnO nanostructures was characterized by X-ray diffraction (XRD), Field emission scanning electron microscopy (FE-SEM).

  • PDF

High-Density Hollow Cathode Plasma Etching for Field Emission Display Applications

  • Lee, Joon-Hoi;Lee, Wook-Jae;Choi, Man-Sub;Yi, Joon-Sin
    • Journal of Information Display
    • /
    • v.2 no.4
    • /
    • pp.1-7
    • /
    • 2001
  • This paper investigates the characteristics of a newly developed high density hollow cathode plasma(HCP) system and its application for the etching of silicon wafers. We used $SF_6$ and $O_2$ gases in the HCP dry etch process. This paper demonstrates very high plasma density of $2{\times}10^{12}cm^{-3}$ at a discharge current of 20 rna, Silicon etch rate of 1.3 ${\mu}m$/min was achieved with $SF_6/O_2$ plasma conditions of total gas pressure of 50 mTorr, gas flow rate of 40 seem, and RF power of200W. This paper presents surface etching characteristics on a crystalline silicon wafer and large area cast type multicrystlline silicon wafer. We obtained field emitter tips size of less than 0.1 ${\mu}m$ without any photomask step as well as with a conventional photolithography. Our experimental results can be applied to various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this research, we studied silicon etching properties by using the hollow cathode plasma system.

  • PDF

Tribological and mechanical properties of plasssma sprayed 316L and 420 stainless steel layers on the AZ91D commercial magesium alloy (AZ91D 상용 마그네슘합금위에 316L과 420의 스테인레스 스틸의 플라즈마 코팅층의 마모와 기계적 특성)

  • 이수완;박종문;이명호;짐진수
    • Journal of the Korean institute of surface engineering
    • /
    • v.30 no.6
    • /
    • pp.365-373
    • /
    • 1997
  • 316L and 420 Stainless steels were deposited onto AZ9ID commercial magnesium alloy by plasma spray process with various gas flow rate of, TEX>$H_2$ secondary gas. And hardness as well as were track volume, coefficient of friction also had been measured. wear and hardness were measured by using reciprocal configuration tribometer and microghardness tester, respectively. Also, the microstructure of the coatings surface the cross sectional area of coating surface and cross sectional area of coaing/Substrate interface had been analyzed with Scanning Electron Microscope(SEM) and Optical microscope(OM). Finally, optimal process parameters for the improvement of coating efficiency such as mechanical property and wear behavior were examined.

  • PDF