• 제목/요약/키워드: Surface Area of Plasma

검색결과 258건 처리시간 0.027초

DLC (ta-C) 후막코팅을 위한 트라이볼로지 코팅 연구 (Tribology Coating Study of Thick DLC (ta-C) Film)

  • 장영준;강용진;김기택;김종국
    • Tribology and Lubricants
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    • 제32권4호
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    • pp.125-131
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    • 2016
  • In recent years, thick ta-C coating has attracted considerable interest owing to its existing and potential commercial importance in applications such as automobile accessories, drills, and gears. The thickness of the ta-C coating is an important parameter in these applications. However, the biggest problems are achieving efficient coating and uniformity over a large area with high-speed deposition. Feasibility is confirmed for the ta-C coating thickness of up to 9.0 µm (coating speed: 3.0 µm/h, fixed substrate) using a single FCVA cathode. The thickness was determined using multiple coating cycles that were controlled using substrate temperature and residual stresses. In the present research, we have designed a coating system using FCVA plasma and produced enhanced thick ta-C coating. The system uses a specialized magnetic field configuration with stabilized DC arc plasma discharge during deposition. To achieve quality that is acceptable for use in automobile accessories, the magnetic field, T-type filters, and 10 pieces of a multi-cathode are used to demonstrate the deposition of the thick ta-C coating. The results of coating performance indicate that uniformity is ±7.6 , deposited area is 400 mm, and the thickness of the ta-C coating is up to 5.0 µm (coating speed: 0.3 µm/h, revolution and rotation). The hardness of the coating ranges from 30 to 59 GPa, and the adhesion strength level (HF1) ranges from 20 to 60 N, depending on the ta-C coating.

이온 플레이팅용 장수명 플라즈마 건 장치의 개발 (Development of a Plasma Gun System for Ion Plating with Long Lifetime)

  • 최영욱
    • 전기학회논문지
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    • 제57권1호
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    • pp.78-81
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    • 2008
  • A hollow cathode which has extremely stable discharge characteristic has been developed. This is composed of the two separated lanthanum hexaboride(LaB6) of a disk type in the tube as the electron emitters. The way of design is of great advantage to extend the surface discharge area of the LaB6, which is also useful for optimal fixing of the LaB6. The hollow cathode is capable of producing 30 kW(100 V, 300 A) of power continuously. Because the generated plasma beam with the high temperature(above $3000^{\circ}C$) from the hollow cathode passes through the center hole of the two intermediate electrodes, it is designed with the high temperature material of the tungsten and the suitable structure of the water cooling. The combinations of the hollow cathode and the two intermediate electrodes are practically useful for the ion plating plasma beam source.

A New Type of Nonthermal Plasma Reactor

  • Geum, Sang-Taek;Moon, Jae-Duk;Jun, Sun-Gon
    • The Korean Journal of Ceramics
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    • 제5권3호
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    • pp.245-249
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    • 1999
  • A new type of nonthermal plasma reactor utilizing ferroelectric pellets is proposed to generate nonthermal plasma efficiently, which is used for simultaneous control of various pollutant gases. Electric charges stored on ferroelctric pellets by corona discharge between a corona tip and a mesh electrode provide partial electrical discharges among ferroelectric pellets. These partial electrical discharges can enhance partial discharges around the surface of ferroelectric pellets. This method utilizes wide reacting area of ferroelectric pellets and partial discharge. Positive and negative dc voltage are applied to the corona tip to generate partial discharges, and corona currents are estimated to investigate charge storage on ferroelectric pellets as function of time and charge relaxation time constants of ferroelectric pellects. As a result, charge relaxationtime, dielectric constants of ferroelectric pellets, polarity of applied voltage and applied time influence partial discharges among ferroelectric pellect.

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플라즈마 표면처리가 TiO2/TiO2-x 저항 변화형 메모리에 미치는 영향 (Effect of Plasma Treatment on TiO2/TiO2-x Resistance Random Access Memory)

  • 김한상;김성진
    • 한국전기전자재료학회논문지
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    • 제33권6호
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    • pp.454-459
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    • 2020
  • In this study, a TiO2/TiO2-x-based resistance variable memory was fabricated using a DC/RF magnetron sputtering system and ALD. In order to analyze the effect of oxygen plasma treatment on the performance of resistance random access memory (ReRAM), the TiO2/TiO2-x-based ReRAM was evaluated by applying RF power to the TiO2-x oxygen-holding layer at 30, 60, 90, 120, and 150 W, respectively. The ReRAM was fabricated, and the electrical and surface area performances were compared and analyzed. In the case of ReRAM without oxygen plasma treatment, the I-V curve had a hysteresis curve shape, but the width was very small, with a relatively high surface roughness of the oxygen-retaining layer. However, in the case of oxygen plasma treatment, the HRS/LRS ratio for the I-V curve improved as the applied RF power increased; stable improvement was also noted in the surface roughness of the oxygen-retaining layer. It was confirmed that the low voltage drive was not smooth due to charge trapping in the oxygen diffusion barrier layer owing to the high intensity ReRAM applied with an RF power of approximately 150 W.

Magnetotransport Properties of Co-Fe/Al-O/Co-Fe Tunnel Junctions Oxidized with Microwave Excited Plasma

  • Nishikawa, Kazuhiro;Orata, Satoshi;Shoyama, Toshihiro;Cho, Wan-Sick;Yoon, Tae-Sick;Tsunoda, Masakiyo;Takahashi, Migaku
    • Journal of Magnetics
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    • 제7권3호
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    • pp.63-71
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    • 2002
  • Three fabrication techniques for forming thin barrier layer with uniform thickness and large barrier height in magnetic tunnel junction (MTJ) are discussed. First, the effect of immiscible element addition to Cu layer, a high conducting layer generally placed under the MTJ, is investigated in order to reduce the surface roughness of the bottom ferromagnetic layer, on which the barrier is formed. The Ag addition to the Cu layer successfully realizes the smooth surface of the ferromagnetic layer because of the suppression of the grain growth of Cu. Second, a new plasma source, characterized as low electron energy of 1 eV and high density of $10^{12}$ $cm^{-3}$, is introduced to the Al oxidation process in MTJ fabrication in order to reduce damages to the barrier layer by the ion-bombardment. The magnetotransport properties of the MTJs are investigated as a function of the annealing temperature. As a peculiar feature, the monotonous decrease of resistance area product (RA) is observed with increasing the annealing temperature. The decrease of the RA is due to the decrease of the effective barrier width. Third, the influence of the mixed inert gas species for plasma oxidization process of metallic Al layer on the tunnel magnetoresistance (TMR) was investigated. By the use of Kr-O$_2$ plasma for Al oxidation process, a 58.8 % of MR ratio was obtained at room temperature after annealing the junction at $300{^{\circ}C}$, while the achieved TMR ratio of the MTJ fabricated with usual Ar-$0_2$ plasma remained 48.4%. A faster oxidization rate of the Al layer by using Kr-O$_2$ plasma is a possible cause to prevent the over oxidization of Al layer and to realize a large magnetoresistance.

Characteristic and moisture permeability of SiOxCy thin film synthesized by Atmospheric pressure-plasma enhanced chemical vapor deposition

  • Oh, Seung-Chun;Kim, Sang-Sik;Shin, Jung-Uk
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2011년도 춘계학술대회 및 Fine pattern PCB 표면 처리 기술 워크샵
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    • pp.171-171
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    • 2011
  • Atmospheric pressure- plasma enhanced chemical vapor deposition(AP-PECVD)Processes are recognized as promising and cost effective methods for wide-area coating on sheets of steel, glass, polymeric web, etc. In this study, $SiO_xC_y$ thin films were deposited by using AP-PECVD with a dielectric barrier discharge(DBD). The characteristic of $SiO_xC_y$ thin films were investigated as afunction of the HMDSO/O2/He flow rate. And the moisture permeability of $SiO_xC_y$ thin films was studied. The $SiO_xC_y$ thin films were characterized by the Fourier-transformed Infrared(FT-IR) spectroscopy and also investigated by X-ray photo electron spectroscopy(XPS), Auger Electron Spectroscopy(AES). The moisture permeability of $SiO_xC_y$ thin films was investigated by $H_2O$ permeability tester Detailed experimental results will be demonstrated through th present work.

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Selective Removal of Cr (VI) and Cr (III) in Aqueous Solution by Surface Modified Activated Carbon

  • Lee, Jeong-Min;Kim, Min-Il;Lee, Young-Seak
    • Carbon letters
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    • 제9권1호
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    • pp.23-27
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    • 2008
  • The adsorption and reduction of Cr (VI) to Cr (III) by surface modified activated carbon (AC) in an aqueous solution was studied. The effects of surface modifications on the properties of the carbons were investigated by the analysis of specific surface area, carbon surface pH, acid/base surface values and functional groups. In order to understand the Cr(VI) adsorption and reduction ratio from Cr(VI) to Cr(III), the Cr adsorption capacity of AC was also measured and discussed by using inductively coupled plasma and UV spectrophotometer. The modifications bring about substantial variation in the chemical properties whereas the physical properties such as specific surface area, pore volume and pore size distribution nearly were not changed. Total Cr adsorption efficiency of as-received activated carbon (R-AC) and nitric acid treated activated carbon (N1-AC and N2-AC) were recorded on 98.2, 99.7 and 100%. Cr(III) reduction efficiency of R-AC increased largely from 0.4% to 28.3% compared to N1-AC and N2-AC.

R&D activities of a-Si:H thin film solar cells by LG Electronics

  • 이돈희
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2007년도 춘계학술발표회 초록집
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    • pp.19-19
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    • 2007
  • Recently, we have developed p-i-n hydrogenated amorphous silicon (a-Si:H) single junction (SJ) thin film solar cells with RF (13,56MHz) plasma enhanced chemical vapor deposition (PECVD) systems, and also successfully fabricated the mini-modules (>300$cm^2$), using laser scribing technique to form an integrated series connection, The efficiency of a mini-module was 7.4% (Area=305$cm^2$, $I_{SC}$=0.25A, $V_{OC}$=14.74V, FF=62%).

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Radio Frequency Multi-Hollow Cathode 플라즈마 시스템을 이용한 대면적 블랙 실리콘 태양전지에 관한 연구 (A Study on Large Area Black Silicon Solar Cell Using Radio-Frequency Multi-Hollow cathode Plasma System)

  • 유진수;임동건;양계준;이준신
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제52권11호
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    • pp.496-500
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    • 2003
  • A low-cost, large area, random, maskless texturing scheme independent of crystal orientation is expected to significantly impact terrestrial photovoltaic technology. We investigated silicon surface microstructures formed by reactive ion etching (RIE) in Multi-Hollow cathode system. Desirable texturing effect has been achieved when radio-frequency (rf) power of about 20 Watt per one hollow cathode glow is applied for our RF Multi-Hollow cathode system. The black silicon etched surface shows almost zero reflectance in the visible region as well as in near IR region. The etched silicon surface is covered by columnar microstructures with diameters from 50 to 100 nm and depth of about 500 nm. We have successfully achieved 11.7% efficiency of mono-crystalline silicon solar cell and 10.2% multi-crystalline silicon solar cell.

질소 플라즈마 처리에 따른 활성탄소섬유 페이퍼의 포름알데하이드 흡착 특성 (Formaldehyde Adsorption Properties of Activated Carbon Fiber-Papers by Nitrogen Plasma Treatment)

  • 민충기;임채훈;명성재;이영석
    • 공업화학
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    • 제33권6호
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    • pp.624-629
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    • 2022
  • 포름알데하이드는 호흡기 및 피부 질환을 일으키는 등 인체에 유해한 실내 환경 오염물질로 알려져 있다. 본 연구에서는 활성탄소섬유 표면에 질소 작용기를 도입하기 위하여 질소 플라즈마 처리를 하였고, 질소 작용기 함유 활성탄소섬유에 대한 포름알데하이드 흡착 특성을 고찰하였다. 주입되는 질소 가스의 유량이 증가함에 따라 활성탄소섬유 표면에 도입되는 질소 작용기의 함량이 약 7% 정도 증가하였으며, 존재하는 질소 작용기의 종류별 비율도 유사하였다. 또한 플라즈마 처리에 의한 식각 효과로 인하여 활성탄소섬유 표면에 초미세기공이 증가하였다. 이에 따라 표면 개질된 활성탄소섬유의 포름알데하이드 흡착 효율도 증가하였다. 그러나, 질소 유량이 120 sccm 이상인 조건에서는 활성탄소섬유 표면이 과도하게 식각되어, 비표면적이 감소하고 포름알데하이드 흡착 능력이 오히려 저하되었다. 따라서, 질소 플라즈마 처리된 활성탄소섬유의 포름알데하이드 흡착은 도입된 질소 작용기의 함량이 주요 요인이지만, 이와 함께 적합한 기공 구조를 가질 때 포름알데하이드의 흡착 효율이 향상됨을 알 수 있었다.